Boron Layer Research Articles

Tunable goniopolarity of graphenelike boron layers in metal diborides

The orientation-dependent conduction polarity, e.g., $p$-type conduction along one direction and $n$-type conduction along another direction, namely ``goniopolarity,'' observed in highly anisotropic materials brought us an alternative concept for novel electronic devices. But goniopolarity has hardly been utilized due to the rarity of goniopolar materials. Here, we associate goniopolarity with the saddle points in electronic band structure and the hyperbolic Fermi surface of materials and highlight the potential of layered metal diboride ($M{\mathrm{B}}_{2}$) materials in achieving this interesting phenomenon using first-principles calculations. We demonstrate that the electron-doped ${\mathrm{MgB}}_{2}$, ${\mathrm{CaB}}_{2}$, and ${\mathrm{SrB}}_{2}$ can exhibit remarkable orientation-dependent conduction polarity with opposite Seebeck coefficients which are detectable in verifying goniopolarity. We attribute the goniopolarity with the ${p}_{x,y}$ orbitals of the boron layers of these materials which constitute anisotropic electronic states along in-plane and out of plane directions. Moreover, their anisotropic Seebeck coefficients can be efficiently enhanced by applying tensile strain. This work offers a promising strategy for design of goniopolar materials and regulation of goniopolarity.

Powder-pack boronizing of CoCrFeNiAl0.5Nb0.5 HEA: Modeling of kinetics, microstructural, mechanical, and tribological characterizations

This study is dedicated to the detailed investigation of boronization kinetic, microstructural, mechanical, and wear properties of high entropy alloys (HEAs) considering their sluggish diffusion effect properties. A CoCrFeNiAl0.5Nb0.5 HEA was powder-pack boronized in the interval of 850–1050 °C for 2, 4, and 6 h in the boronizing medium containing 90 wt% of boron carbide and 10 wt% of sodium tetrafluoroborate. Boronizing of CoCrFeNiAl0.5Nb0.5 HEA was successfully produced. The obtained multi-phase boronized layers were characterized by compactness and flatness showing up inside its typical dendritic zones. The X-Ray Diffraction (XRD) studies showed the presence of ternary phases inside the boronized layers having a thickness of 4.38–92.16 µm. The nano and microhardness values were also determined and the adhesion force was analyzed through the Rockwell indentation tests. In addition, the Vickers fracture toughness values (0.46–1.83 MPa m−1/2) of the treated samples were found to be very dependent on the boronizing temperature. The wear losses have decreased due to the increase in hardness and an improvement of up to 99% has been achieved. The average diffusion coefficient model was implemented to deduce the boron activation energy in the CoCrFeNiAl0.5Nb0.5 HEAs. Finally, the predicted layers’ thicknesses were coincident with the experimental data.

Regulating Polysulfide Conversion Kinetics Using Tungsten Diboride as Additive For High-Performance Li-S Battery.

The practical application of Li-S batteries is severely limited due to low sulfur utilization, sluggish sulfur redox kinetics, intermediate polysulfide dissolution/shuttling, and subsequent anode degradation. A smart cathode with efficient electrocatalyst and a protected anode is necessary. Herein, hollow carbon (HC) spheres are used as a sulfur host to improve the electrical conductivity and buffer the volume expansion of active materials. Considering the weak interaction between carbon and lithium polysulfides (LiPS), tungsten diboride (WB2 ) nanoparticles are used as a conductive additive. Both experimental and density functional theory (DFT) comprehensively exhibit that metallic WB2 nanoparticles can firmly anchor the LiPS through B-S bond formation, accelerate their electrocatalytic conversion, and immobilize them. DFT also reveals that boron interacts with LiPS either through molecular or dissociative adsorption depending on its boron layer arrangement in WB2 . Further, a freestanding lithiated-poly(4-styrene sulfonate) membrane constructed on lithium, offers a homogeneous Li-ion flux, stable interface, and protection from LiPS. Finally, cells with the HC-S+WB2 cathode and protected anode exhibit improved active material utilization, superior rate performance, and impressive cycling stability, even at high sulfur loading and less quantity of the electrolyte. Further, the pouch cells demonstrate high reversible capacity and an excellent capacity retention.

Stabilization of porous borophene-graphene vertical heterostructure using unilateral hydrogenation

Unilateral surface passivation by hydrogen atoms is considered as an effective way to stabilize the borophene-graphene with periodic perforation. In the absence of hydrogen, a transition from porous graphene to graphenylene is observed. In the passivation by atomic hydrogen (H-passivated) porous borophene-graphene, the covalent and van der Waals forces are continuing their efforts between boron and carbon layers. The stability is confirmed by ab initio calculations of the cohesive energy and phonon spectrum. Using two calculation schemes, it is shown the semiconductor nature of the electronic properties, mainly due to boron sites. The elastic response is much weaker than that of borophene-graphene, but the out-of-plane piezoelectric effect is stronger. The optical properties are of particular interest mainly due to the absorption peak values in the optical range.

Distinct superconducting behaviors of pressurized WB2 and ReB2 with different local B layers

The recent discovery of superconductivity up to 32 K in the pressurized MoB2 reignites the interests in exploring high-Tc superconductors in transition-metal diborides. Inspired by that work, we turn our attention to the 5d transition-metal diborides. Here we systematically investigate the responses of both structural and physical properties of WB2 and ReB2 to external pressure, which possess different types of boron layers. Similar to MoB2, the pressure-induced superconductivity was also observed in WB2 above 60 GPa with a maximum Tc of 15 K at 100 GPa, while no superconductivity was detected in ReB2 in this pressure range. Interestingly, the structures at ambient pressure for both WB2 and ReB2 persist to high pressure without structural phase transitions. Theoretical calculations suggest that the ratio of flat boron layers in this class of transition-metal diborides may be crucial for the appearance of high Tc. The combined theoretical and experimental results highlight the effect of geometry of boron layers on superconductivity and shed light on the exploration of novel high-Tc superconductors in borides.

Probing copper-boron interactions in the Cu2B8− bimetallic cluster

Borophenes are atom-thin boron layers that can be grown on coinage metal substrates and have become an important class of synthetic 2D nanomaterials. The interactions between boron and substrates are critical to understand the growth mechanisms of borophenes. Here, we report an investigation of copper-boron interactions in the Cu2B8− bimetallic cluster using photoelectron spectroscopy and quantum chemical calculations. Well-resolved photoelectron spectra are obtained at several photon energies and are combined with theoretical calculations to elucidate the structures and bonding of Cu2B8−. Global minimum searches reveal that Cu2B8− consists of a Cu2 dimer atop a B8 molecular wheel with a long Cu–Cu bond length close to that in Cu2+. Chemical bonding analyses indicate that there is clear charge transfer from Cu2 to B8, and the Cu2B8− cluster can be viewed as a [Cu2+]-borozene complex, [Cu2+][B82–]. In the neutral cluster, no Cu–Cu bond exists and Cu2B8 consists of two Cu+ centers interacting with doubly aromatic B82− borozene. The charge transfer interactions between Cu and boron in the Cu2B8− cluster are analogous to charge transfer from the copper substrate to the first borophene layer recently reported to be critical in the growth of bilayer borophenes on a Cu(111) substrate.

Solar Cells with Laser Doped Boron Layers from Atmospheric Pressure Chemical Vapor Deposition

We present laser-doped interdigitated back contact (IBC) solar cells with efficiencies of 23% on an area of 244 cm2 metallized by a screen-printed silver paste. Local laser doping is especially suited for processing IBC cells where a multitude of pn-junctions and base contacts lay side by side. The one-sided deposition of boron-doped precursor layers by atmospheric pressure chemical vapor deposition (APCVD) is a cost-effective method for the production of IBC cells without masking processes. The properties of the laser-doped silicon strongly depend on the precursor’s purity, thickness, and the total amount of boron dopants. Variations of the precursor in terms of thickness and boron content, and of the laser pulse energy density, can help to tailor the doping and sheet resistance. With saturation-current densities of 70 fA/cm2 at sheet resistances of 60 Ohm/sq, we reached maximum efficiencies of 23% with a relatively simple, industrial process for bifacial IBC-cells, with 70% bifaciality measured on the module level. The APCVD-layers were deposited with an inline lab-type system and a metal transport belt and, therefore, may have been slightly contaminated, limiting the efficiencies when compared to thermal-diffused boron doping. The use of an industrial APCVD system with a quartz glass transport system would achieve even higher efficiencies.

Boron Nitride‐Based Release Agent Coating Stabilizes Li1.3Al0.3Ti1.7(PO4)3/Li Interface with Superior Lean‐Lithium Electrochemical Performance and Thermal Stability

AbstractSodium super ionic conductor (NASICON)‐type Li1.3Al0.3Ti1.7(PO4)3 (LATP) is one of the most promising solid‐state electrolytes (SSEs) owing to its high Li‐ion conductivity, high stability with air, and low cost. However, LATP is less widely deployed due to its high incompatibility with lithium metal. Herein, a facile and inexpensive spray‐coating approach is proposed to construct a thin 3D organic/inorganic composite layer of a commercial boron nitride‐based release agent (BNRA) onto LATP. Apart from protecting LATP, this interfacial BNRA layer enables Li‐ion migration through BN defects and affords low resistance at BNRA/Li interface due to in situ formation of Li–N. Compared to bare LATP, which fails to support Li stripping–plating process in a lean‐lithium Li/Li symmetric cell (2 µm), BNRA‐LATP runs for ≈1800 h. The assembled lean‐lithium LiFePO4 (LFP)/BNRA‐LATP/Li solid state batteries (SSBs) deliver a specific capacity of 150.9 mA h g–1 at 0.5 C with minor capacity decay after 500 cycles. Besides, the BNRA layer eliminates thermal runaway risks of LATP‐based SSBs by fast in‐plane thermal dispersion. This work demonstrates a facile LATP‐protection strategy regarding Li incompatibility and thermal runway issues, and pinpoints the interfacial formation mechanism, fulfilling the pursuit of high‐performance low‐cost SSEs.

Compound Boronizing and Its Kinetics Analysis for H13 Steel with Rare Earth CeO2 and Cr2O3

The compound boronizing of H13 steel sample was carried out by adding rare earth CeO2, and the effects of main parameters of compound boronizing on the properties of the boronizing layer were investigated. The boronizing kinetics were also analyzed. Under the conditions of boronizing temperatures of 850 °C, 900 °C, 950 °C, and 1000 °C, and boronizing times of 2 h, 3 h, 4 h, and 5 h, the boronizing experiment was carried out by adding CeO2 with mass fraction of 2%, 4% and 6%, Cr2O3 with a mass fraction of 1%, 2%, 3%, and 4%. The results show that boronizing H13 steel with rare earth CeO2 is conducive to the diffusion of boron atoms and can significantly improve the thickness and microhardness of boronizing layer. Boronizing kinetic analysis shows that the diffusion activation energy of boron atom decreases significantly when the rare earth content is 4%, which indicates that the content of rare earth CeO2 with 4% is an ideal selection for considering improving the utilization rate of rare earth materials, and the boronizing kinetic analysis can provide a quantitative basis for determining the content of rare earth metals. Therefore, experiments and analysis show that for H13 steel, when the boronizing temperature is 950 °C, time is 4 h and rare earth content is 4%, the thickness of the boronizing layer can reach 71 μm and the microhardness at the depth of 70 μm from the surface layer can reach 1546.32 HV. Moreover, on this basis, when Cr2O3 with a rare earth content of 2% is added, the microstructure and wear resistance of the boronizing layer are significantly improved.

Low-resistance ohmic contacts on boron-doped {113} oriented homoepitaxial diamond layers

Refractory metals (titanium, molybdenum, and zirconium) with a gold overlayer were used to form ohmic contacts on {113}-oriented boron doped diamond epitaxial layers (boron concentration ranging from 1019 to 1021 cm−3). Morphology and thickness of deposited layers were determined by AFM and X-SEM; resistivity, carrier concentration and mobility were determined by Hall measurement. Specific contact resistance RCsp of evaporated Ti/Au, Zr/Au, and Mo/Au contacts was measured using c-TLM structures after different annealing stages at temperatures up to 850 °C. Results show that on layers with {113} orientation it is possible to achieve ohmic contacts of comparable quality as for layers with {100} orientation. For all three metal systems, the lowest values for specific contact resistance reached 1 × 10−6 Ω.cm2. Ti/Au contacts show a stable ohmic behavior over the whole range of annealing temperatures, while Mo/Ti contacts had to be annealed above 500 °C to reduce the Schottky barrier and achieve good ohmic contact on lower B doped layers. Zr/Au contacts exhibit the lowest adhesion and required annealing to at least 700 °C to achieve ideal electrical and mechanical properties. Mo/Au and Zr/Au contacts on highly boron doped layers (~1021 cm−3) show excellent contacts when annealed at 700 °C, and therefore can be considered as improved candidates for ohmic contacts for diamond-based high-temperature power electronics than the conventional Ti/Au (Ti/Pt/Au) contact system. In summary, this study confirms the suitability of {113} oriented boron doped diamond epitaxial layers for the fabrication of diamond power electronic devices with excellent ohmic contacts.

Effects of Boriding, Nitrocarburizing, Nitriding and Post-oxidation Treatments on The Tribological Properties of DIN 32CrMoV12-10 Steel

In this study, the effect of different surface treatments was investigated to improve the friction and wear properties of DIN 32CrMoV12-10 steel. For this purpose, chrome plating, boriding, nitrocarburizing+oxidation, nitriding+oxidation processes were applied to the samples prepared from DIN 32CrMoV12-10 steel. After the procedures, the structural, morphological and mechanical properties of the samples were determined by XRD, SEM, hardness measurement device and profilometer. In order to determine the tribological properties of the samples, pin-on-flat wear tests were carried out. It was observed that a chromium layer was formed on the surface of the material after chrome plating. In boronized samples, it was observed that a boron layer was formed on the surface of the material and a diffusion layer was formed below it. The formed layers contain Fe2B and FeB phases. In nitrocarburized+oxidized and nitrided+oxidized samples, it was observed that the oxide layer on the material surface, a white layer just below it and a diffusion zone extending to the inner parts of the material were formed. The oxide layer formed on the surface consists of Fe2O3 and Fe3O4 phases, while the white layer and diffusion layers consist of ε-Fe2-3N and γ'-Fe4N phases. Due to the increased plastic deformation resistance with oxide layers, hard nitride phases and diffusion layers, the highest wear resistance was obtained from nitrocarburized+oxidized and nitrided+oxidized samples.

Nonprecious Metal Borides: Emerging Electrocatalysts for Hydrogen Production

ConspectusThe development of highly active noble-metal-free catalysts for the hydrogen evolution reaction (HER) is the focus of current fundamental research, aiming for a more efficient and economically affordable water-splitting process. While most HER catalysts are studied only at the nanoscale (small particle size and high surface area), metal borides (MBs) are mostly studied in bulk form. This offers a unique opportunity for designing highly efficient and nonprecious HER MBs electrocatalysts based on structure-activity relationships, especially because of their rich compositional and structural diversity.In this Account, we focus on the importance of boron and its substructures in achieving extraordinary HER performances and the importance of using structure-activity relationships to design next-generation MBs electrocatalysts. Studying the Mo-B system, we found that the HER activity of molybdenum borides increases with increasing boron content: from Mo2B (no B-B bonds in the structure, least active) to α-MoB and β-MoB (zigzag boron chains, intermediate activity) and MoB2 (planar graphene-like boron layer, most active). Density functional theory (DFT) calculations have shown that the (001) boron layer in hexagonal MoB2 (α-MoB2) is the most active surface and has similar HER activity behavior like the benchmark Pt(111) surface. However, puckering this flat boron layer to the chair-like configuration (phosphorene-like layer) drastically reduces its activity, thereby making the rhombohedral modification of MoB2 (Mo2B4 or β-MoB2) less active than α-MoB2. This discovery was then further supported by studies of the Mo-W-B system. In fact, the binary WB2, which also contains the puckered boron layer, is also less active than α-MoB2, despite containing the more active transition metal W, which performs better in elemental form than Mo. To design a superior catalyst, the more active W was then stabilized in the hexagonal α-MoB2 structure through the synthesis of α-Mo0.7W0.3B2 ,which indeed proved to be a better HER electrocatalyst than α-MoB2. Using the isoelectronic Cr instead of W led to the α-Cr1-xMoxB2 solid solution, the HER activity of which followed unexpected canonic-like (or volcano-like) behavior that perfectly matched that of the c lattice parameter trend, thereby producing the best catalyst α-Cr0.4Mo0.6B2 that outperformed Pt/C at high current density, thus underscoring the effectiveness of the structure-activity concept in designing highly active catalysts. This concept was further applied to the V-B system, leading to the discovery of an unexpected boron chain dependency of the HER activity that ultimately led to the prediction of new VxBy catalysts and their crystal structures and overpotentials. Finally, reducing the particle sizes of all of these bulk crystalline catalysts is also possible and offers an even greater potential as demonstrated for nanoscale a-MoB2 and VB2. Nevertheless, these crystalline nanomaterials are still highly agglomerated due to the high temperature required for their synthesis, thus the synthesis of highly dispersed MBs is an urgent goal that will enable the fulfillment of their extraordinary potential in the future.

Laser Processing of Diffusion Boronized Layer Produced on Monel® Alloy 400-Microstructure, Microhardness, Corrosion and Wear Resistance Tests.

The paper presents the results of studies of microstructure, mechanical and physicochemical properties of surface layers produced by laser modification of the diffusion boron layer on Monel® Alloy 400. The diffusion boron layers were produced at 950 °C for 6 h. The gas-contact method was used in an open retort furnace. The process was carried out in a powder mixture containing B4C carbide as a boron source. The next stage was the modification of the boron layer with a diode laser beam of a nominal power of 3 kW. A constant power of 1400 W of the laser beam was used. The scanning speed was variable (successively 5 m/min, 25 m/min, 50 m/min). In order to determine the best parameters, single tracks were created, after which multiple tracks were prepared using previously selected parameters. It was found that both the diffusion borided layer and the laser modified layer had better properties than the substrate material. Both these processes contributed to an increase in corrosion resistance, hardness and wear resistance. It was also found that laser modification caused a slight deterioration of the properties in comparison with the diffusion borided layer. However, the laser modification process resulted in the production of a much thicker layer.

Novel boriding technique of low-carbon steel weldments

Boriding is considered one of the essential surface treatments for carbon steels during the last decades. The conventional methods of boriding are subjected to many limitations due to the sophisticated setup and the time-consuming treatment. Therefore, less complex methods and less time consumption are the main research objectives past couple of years. This research suggests an enhanced boriding surface treatment technique for low carbon steel. The advantages of the proposed method include the reduction of boriding process time through the development of new boron rich compounds which consequently eliminates the need of specially designed furnaces. The illustrated outputs reveal promising results without sacrificing the physical properties. The proposed technique was carried out experimentally. Depth of penetration and microhardness were measured and compared with results from previous literature. Some trials have shown 35 µm depth of penetration of boron layer at 30 min treatment time associated with micro-hardness up to 2388 HV.

Synthesis of bilayer borophene.

As the nearest-neighbour element to carbon, boron is theoretically predicted to have a planar two-dimensional form, named borophene, with novel properties, such as Dirac fermions and superconductivity. Several polymorphs of monolayer borophene have been grown on metal surfaces, yet thicker bilayer and few-layer nanosheets remain elusive. Here we report the synthesis of large-size, single-crystalline bilayer borophene on the Cu(111) surface by molecular beam epitaxy. Combining scanning tunnelling microscopy and first-principles calculations, we show that bilayer borophene consists of two stacked monolayers that are held together by covalent interlayer boron-boron bonding, and each monolayer has β12-like structures with zigzag rows. The formation of a bilayer is associated with a large transfer and redistribution of charge in the first boron layer on Cu(111), which provides additional electrons for the bonding of additional boron atoms, enabling the growth of the second layer. The bilayer borophene is shown to possess metallic character, and be less prone to being oxidized than its monolayer counterparts.

Large-Scale Layer-by-Layer Synthesis of Borophene on Ru(0001)

Borophene, a two-dimensional (2D) layer of elemental boron, has attracted attention as a metallic 2D material with rich polymorphism, as well as potentially interesting electronic, optical, chemical, and catalytic properties. While controllable adjustments of the thickness beyond a single layer promise a further tunability of the properties, the growth of borophene on metal substrates has largely remained limited to monolayers. Recently, bilayer borophene has been realized on Ag(111), albeit so far limited to domains a few tens of nanometers in size. The broader exploration of the properties of borophene calls for the development of synthesis methods that produce borophene with controlled thickness beyond a single layer. Here, we report layer-by-layer borophene growth on Ru(0001) substrates up to a coverage of two atomic layers using surface segregation of interstitial boron during cooling from high temperatures. Real-time surface microscopy follows borophene nucleation and growth, establishes the growth mode of the first and second layers, and demonstrates coverage across large surface areas. Diffraction shows highly crystalline borophene layers that grow in a high-order superstructure on the Ru(0001) surface lattice. Our results add to the capabilities of synthesizing borophene and point out avenues for growing high-quality few-layer borophene on metal substrates.

Effect of boronizing process of AISI 321 stainless steel surface on its corrosion resistance in acid environment (pH = 1)

The paper presents results of research under the effect of surface thermo-chemical treatment on the cor-rosion resistance of X6CrNiTi18-10 steel. The corrosion resistance of the surface layers of stainless steel obtained as a result of thermo-chemical treatment (boronizing process) was assessed using the method of progressive thinning, which consists in performing corrosion tests on deeper and deeper areas of the surface layer. This method allowed for the determination of changes in individual characteristic corro-sion parameters read from the potentiokinetic polarization curves and the determination of the depth profiles of these parameters. In the paper, results of tests of X6CrNiTi18-10 steel resistance to general corrosion, performed in acidified sulphate solutions (pH = 1) have been presented. The thickness of the surface layer was assessed on the basis of structural tests and changes in microhardness on the cross-section of the material. It has been found that the extremely high hardness of the boron layer was accompanied by deterioration of the corrosion resistance. The general corrosion rate of the surface layer is 3-4 times higher than the corrosion rate of the material core (substrate). The characteristics of the pas-sive state of steel are particularly worsened, which is manifested by an increase in the value of the critical passivation current, the minimum current in the passive range and by limiting the tendency to secondary passivation.

Theoretical considerations of superconducting HfBH2 and HfB2H under high pressure

AlB2-type metal diborides represented by MgB2 become an important type of conventional superconductors. However, AlB2-type HfB2 is not superconductive. Pressure-induced HfH10 are predicted to be high-temperature superconductors. Here, first-principles swarm-intelligence structural search calculations identified two ternary compounds, HfBH2 and HfB2H, showing superconductivity with the predicted superconducting transition temperatures of 2.1–14.9 and 2.2–15.0 K for a wide range of Coulomb pseudopotential μ* = 0.15–0.05 at 300 GPa, respectively. The two compounds exhibit interesting structural features, such as an Hf–H layer, covalent B–H framework, and graphene-type boron layer, as observed in AlB2-type HfB2. Besides atomic hydrogen and covalent skeleton contributing to superconducting transition, H-activated hafnium also plays a certain role.

Existence of spin-polarized Dirac cone in Sc[formula omitted]CrB[formula omitted]: A DFT study

First principles calculations on Sc2CrB6 crystal revealed the existence of Dirac Cone in its electronic structure for the first time. The compound has an interesting crystal structure with 2D boron layers with hexagonal, pentagonal, heptagonal boron rings sandwiched between the metal layers. Calculations show that the compound has a mixed covalent and metallic nature of the bonding. Also, ground state ferromagnetic behaviour is predicted for the metallic bonded Sc2CrB6. Here the magnetization arises mostly from the Cr atom with enhanced contribution from the remaining elements. Interestingly, band crossing is seen at the Fermi level with spin polarization indicating the existence of Dirac cone in Sc2CrB6. Apart from this, high-pressure calculations up to about 67 GPa reveal a pressure-induced transition from ferromagnetic state to non-magnetic state around 30.3 GPa.

Миграция протона по поверхности борных слоев

Borophene is a two-dimensional allotrope of boron and it is also known as boron sheet. First it has been predicted theoretically in the mid-1990s, experimentally borophene was confirmed in 2015 when the structure was successfully synthesized in 2015. One of the key features of borophene is its strong anisotropy – the dependence of mechanical and electrical properties on direction. This phenomenon is not typical for 2D materials and has never been observed in 2D metals before. Borophene has the highest tensile strength of all known two-dimensional materials. In early works, it was found that the adsorption of a hydrogen atom on the surface of borophene is possible and the analyses of electronic density showed that atom H became a proton. Therefore, in this work, the authors have studied the proton migration over the surface of boron sheets of two types and have found the most energetically favorable path of proton motion. The electron-energy characteristics of the process of migration of a single proton along the surface of boron layers of two types are determined and it is established that in all the considered cases the proton is able to move along the surface almost barrier-free. The type of conductivity of pure boron layers and layers modified by a single proton is determined. In the A-type boron layer, the proton increases the band gap by 0.04 eV, and in the B-type layer, the band gap changes by 0.05 eV. It is proved that two-dimensional boron nanostructures can be considered as a new class of boron topological structure with proton conductivity.