Bolometric Response Research Articles

High-speed optical-waveguide integrated single-walled carbon nanotube bolometer

The rapid development of photonic integrated circuits (PICs) and their applications in various fields of science and technology requires the creation of easy-to-manufacture high-speed integrated detectors. In this work, we fabricated and studied planar waveguide-integrated bolometers based on a thin film of single-walled carbon nanotubes (SWCNTs) on the silicon nitride platform. This bolometer showed good internal responsivity and a high bandwidth >1 GHz. In-depth analysis allowed us to retrieve the main parameters of the SWCNT film that govern the bolometric response that can be difficult to measure directly. The results obtained show a promising prospect of using SWCNT bolometers for PIC applications.

Semiconductor Nanoparticle Anchored Single-Walled Carbon Nanotubes for a Bolometer.

The bolometer is developed using single-walled carbon nanotubes (SWCNT) anchored with semiconductor nanoparticles of cadmium sulfide, stannous disulfide, and zinc oxide (ZnO). The bolometric responses were recorded at varying temperatures from 10 K to room temperature. The anchored SWCNTs provided a higher temperature coefficient of resistance (TCR) than pristine SWCNTs. The largest TCR is recorded from SWCNTs/ZnO (-0.11%/K) at room temperature, which is 200% higher than pristine SWCNTs. The largest photoresponsivities of SWCNTs/ZnO under near-infrared (NIR) and wide wavelength source (200-1200 nm) illuminations are 5.06 and 37.51 mV/W, respectively. The extraordinary performance of SWCNTs/ZnO stands out at ∼17 × 104% under IR illumination. The study presents a significant advancement in the development of high-performance SWCNT bolometric materials by anchoring with semiconductor nanoparticles.

Dynamic characteristics of terahertz hot-electron graphene FET bolometers: Effect of electron cooling in channel and at side contacts

We analyze the operation of the hot-electron FET bolometers with the graphene channels (GCs) and the gate barrier layers. Such bolometers use the thermionic emission of the hot electrons heated by incident-modulated THz radiation. The hot electrons transfer from the GC into the metal gate. As the THz detectors, these bolometers can operate at room temperature. We show that the response and ultimate modulation frequency of the GC-FET bolometers are determined by the efficiency of the hot-electron energy transfer to the lattice and the GC side contacts due to the 2DEG lateral thermal conductance. The dependences of these mechanisms on the band structure and geometrical parameters open the way for the GC-FET bolometers optimization, in particular, for the enhancement of the maximum modulation frequency.

Temperature Dependence of Hot-Electron Graphene Fet Bolometric Detectors Response to Modulated Terahertz Radiation

In this paper, we analyze the modulation characteristics and the ultimate modulation frequency of the terahertz (THz) hot-electron FET bolometers with the graphene channels (GCs), metal gate (MG), and gate barrier layers (BLs) in a wide temperature range. Our results predict that the responsivity of GC-FET bolometers decreases with decreasing operating temperature. This is attributed to a dramatic drop in the thermionic GC-MG current (characterized by the relatively large activation energy) and its modulated component when the temperature lowers. A further decrease in the temperature results in a fairly strong responsivity roll-off. In contrast, the responsivity of the GC-FET detectors with the temperature-adjusted load resistance rises with decreasing temperature because the temperature lowering leads to an increase in the electron energy relaxation time and promotes more effective heating by the impinging THz radiation. In this case, the weakening of the thermionic current is compensated by the commensurate increase in the load resistance.

Metal-carbon nanotube composite for wavelength-selective bolometer with improved characteristics

This work comprehensively discusses the utilization of a metal-multiwalled carbon nanotube (CNT) nanocomposite of gold (Au)/CNT for uncooled bolometric application synthesized by a simple rapid green synthesis technique. Enhanced light–matter interaction with the visible (532 nm) and near-infrared (1064 nm) radiations in the nanocomposite is utilized for achieving improved bolometric response at room temperature (RT, ∼300 K). A comparatively higher temperature coefficient of resistance of ∼−0.11%/K (improvement of ∼57%) was achieved in the Au/CNT nanocomposite bolometer (BM). Additionally, the composite BM demonstrated a dual (532 and 1064 nm) spectral selectively and enhanced sensitivity with respective large RT voltage responsivities of ∼11.70 ± 3.45 V/W and ∼503.54 ± 12.77 mV/W, as opposed to null response from the CNT BM. The current study, thus, demonstrates an important step toward designing high-performing CNT BMs for uncooled operation, with added functionality of wavelength-selectiveness.

Modeling TES Nonlinearity Induced by a Rotating HWP in a CMB Polarimeter

Most upcoming CMB experiments are planning to deploy between a few thousand and a few hundred thousand TES bolometers in order to drastically increase sensitivity and unveil the B-mode signal. Differential systematic effects and 1/f noise are two of the challenges that need to be overcome in order to achieve this result. In recent years, rotating half-wave plates have become increasingly more popular as a solution to mitigate these effects, especially for those experiments that are targeting the largest angular scales. However, other effects may appear when a rotating HWP is being employed. In this paper, we focus on HWP synchronous signals, which are due to intensity to polarization leakage induced by a rotating cryogenic multilayer sapphire HWP employed as the first optical element of the telescope system. We use LiteBIRD LFT as a case study and we analyze the interaction between these spurious signals and TES bolometers, to determine whether this signal can contaminate the bolometer response. We present the results of simulations for a few different TES model assumptions and different spurious signal amplitudes. Modeling these effects is fundamental to find what leakage level can be tolerated and minimize nonlinearity effects of the bolometer response.

Design and Comparison of Diamond‐ and Sapphire‐Based NbN KIDs for Fusion Plasma Polarimetric Diagnostics

Design and characterization measurements performed on kinetic inductance detectors (KIDs) produced on sapphire and polycrystalline diamond substrates are presented. Designed as part of a nuclear fusion polarimetric diagnostic, the foreseen plasma‐probing frequency of the final devices is 1.3 THz with a maximum response time under 10 ms and cross‐polarization target accuracy of 1%. These detectors are based on superconducting micro‐resonators that undergo de‐tuning upon absorption of radiation. The main characteristics of the devices include polarization sensitiveness and lumped‐elements multi‐pixel configuration produced from photo‐lithographed niobium nitride (NbN) thin films. The direct current (DC) and microwave characterization measurements highlight large differences in the thin film quality, with the superconductor deposited on diamond showing reduced critical temperature, lower critical current density, and increased values of the kinetic inductance. This difference is likely due to the higher lattice constant and thermal expansion coefficient mismatch between film and substrate in the case of diamond, with the different surface finish quality of the crystalline samples available also playing a role. The devices on both substrates show a bolometric response to THz radiation that fulfills the requirement guidelines and represent a good starting point to optimize the design for the application at hand.

Folded-Dipole Antenna Geometrical Analysis for THz Microbolometer

To improve the responsivity of terahertz (THz) antenna-coupled bolometer, heater (load) resistance has to be increased to suppress the thermal conduction and realize larger temperature rise of the thermistor. Proper design of antenna is therefore essential to assure the impedance matching between antenna and heater. From this viewpoint, a high-impedance folded-dipole antenna (FDA) has been studied numerically by the finite element simulation. The effect of FDA structural parameters such as number of arms, antenna width, and arm spacing are discussed with the lumped port and resistive heater coupled to the antenna gap for the cases of radiating and receiving modes, respectively. The product of resonant resistance and area efficiency is used to predict the improvement made by FDA as a figure of merit (FOM) correlated to the bolometer responsivity. This study revealed that the optimum FOM in FDA-coupled bolometer operating at 1 THz was obtained with three arms, 1-μm antenna width and 4-μm arm spacing. A comparison was made with the result from a half-wave dipole antenna and revealed that FDA could enhance the bolometer responsivity by a factor of 15. This research demonstrated the effectiveness of the FDA to improve the performance of THz antenna-coupled bolometer for applications such as imaging for non-destructive inspection.

Nanowire bolometer using a 2D high-temperature superconductor

Superconducting nanowires are very important due to their applications ranging from quantum technology to astronomy. In this work, we implement a non-invasive process to fabricate nanowires of high-T c superconductor Bi2Sr2CaCu2O8+δ . We demonstrate that our nanowires can be used as bolometers in the visible range with very high responsivity of 9.7 × 103 V W−1. Interestingly, in a long (30 μm) nanowire of 9 nm thickness and 700 nm width, we observe bias current-dependent localized spots of maximum photovoltage. Moreover, the scalability of the bolometer responsivity with the normal state resistance of the nanowire could allow further performance improvement by increasing the nanowire length in a meander geometry. We observe phase slip events in nanowires with small cross-sections (12 nm thick, 300 nm wide, and 3 μm long) at low temperatures. Our study presents a scalable method for realizing sensitive bolometers working near the liquid-nitrogen temperature.

Preparation and Bolometric Responses of MoS2 Nanoflowers and Multi-Walled Carbon Nanotube Composite Network.

Due to their broadband optical absorption ability and fast response times, carbon nanotube (CNT)-based materials are considered promising alternatives to the toxic compounds used in commercial infrared sensors. However, the direct use of pure CNT networks as infrared sensors for simple resistance read-outs results in low sensitivity values. In this work, MoS2 nanoflowers are composited with CNT networks via a facile hydrothermal process to increase the bolometric performance. The thermal diffusivity (α) against temperature (T) is measured using the transient electro-thermal (TET) technique in the range of 320 K to 296 K. The α-T curve demonstrates that the composite containing MoS2 nanoflowers provides significant phonon scattering and affects the intertube interfaces, decreasing the α value by 51%. As the temperature increases from 296 K to 320 K, the relative temperature coefficient of resistance (TCR) increases from 0.04%/K to 0.25%/K. Combined with the enhanced light absorption and strong anisotropic structure, this CNT–MoS2 composite network exhibits a more than 5-fold greater surface temperature increase under the same laser irradiation. It shows up to 18-fold enhancements in resistive responsivity ((Ron − Roff)/Roff) compared with the pure CNT network for a 1550 nm laser at room temperature (RT).

Responsivity and Noise Equivalent Power of a Single Cold-Electron Bolometer

We have developed a single-pixel capacitively coupled Cold-Electron Bolometer (CEB) and characterized it in the current-biased regime. The most attractive feature of the CEB is effective electron self-cooling of the absorber, which leads to a lower bolometer noise and higher dynamic range. The bolometer responsivity was measured by determining the voltage response to an applied power through the absorber from a heating current, modulated at frequencies from 35 Hz to 2 kHz. The optimum responsivity of 1.5 × 1010 V/W was measured at a modulation frequency of 35 Hz. The noise equivalent power (NEP) was subsequently obtained from the estimated bolometer noise voltage with respect to the measured bolometer responsivity. The NEP of better 2 × 10−18 W/Hz1/2 was obtained for modulation frequencies greater than 100 Hz. The background power and the bolometer time constant were also estimated from the experimental results. The photon-noise-limited operation of CEB will dominate for a signal power of 10 fW and higher at frequency 80 GHz and higher.

Pulsed terahertz radiation from a double-barrier resonant tunneling diode biased into self-oscillation regime

The study of the bolometer response to terahertz (THz) radiation from a double-barrier resonant tunneling diode (RTD) biased into the negative differential conductivity region of the I–V characteristic revealed that the RTD emits two pulses in a period of intrinsic self-oscillations of current. The bolometer pulse repetition rate is a multiple of the fundamental frequency of the intrinsic self-oscillations of current. The bolometer pulses are detected at two critical points with a distance between them being half or one-third of a period of the current self-oscillations. An analysis of the current self-oscillations and the bolometer response has shown that the THz photon emission is excited when the tunneling electrons are trapped in (the first pulse) and then released from (the second pulse) miniband states.

Response of a Cold-Electron Bolometer on THz Radiation from a Long YBa2Cu3O7−δ Bicrystal Josephson Junction

The response of the Cold-Electron Bolometers (CEBs), integrated into a 2-D array of dipole antennas, has been measured by irradiation from YBa2Cu3O7−δ (YBCO) 50 μm long Josephson junction into the THz region at frequencies from 0.1 to 0.8 THz. The possibility of controlling the amplitude-frequency characteristic is demonstrated by the external magnetic field in the traveling wave regime of a long Josephson junction. The YBCO junction has been formed on the bicrystal Zr1−xYxO2 (YSZ) substrate by magnetron sputtering and etching of the film. CEBs have been fabricated using an Al multilayer structure by a self-aligned shadow evaporation technique on Si substrate. Both receiver and oscillator have been located inside the same cryostat at 0.3 K and 2.7 K plates, respectively.

Millimeter-Wave Response of All Metal-Organic Deposited YBCO Transition Edge Bolometer

We report on the response of a monolithic high $\mathrm{T_{c}}$ transition-edge bolometer to about 3 mmWave for the first time. The detector structure consisting of 400-nm $\mathrm{YBa_{2}Cu_{3}O_{7-x}}$ (YBCO) film on buffered yttria stabilized zirconia substrate without any coupled antenna, shows bolometric type responsivity to the 3-mmWave radiation at its transition temperature. The YBCO thin film and $\mathrm{Ce_{0.9}La_{0.1}O_{2}}$ buffer layer are both fabricated by the metal-organic deposition method. The meander line pattern of the bolometer is designed for obtaining maximum absorption and responsivity possible when the polarized radiation of the source is aligned with the pattern. Meander lines are 50 micrometers wide and 1.5-mm long. We have measured amplitude and phase of the response versus modulation frequency of the detector to the linearly polarized 95-GHz source, and the detector was biased at five distinct temperatures at the transition corresponding to five different electrical conductivities of the YBCO film. When the meander lines of the device are parallel to the incident beam polarization, the YBCO pattern is speculated to act as a dissipative antenna resulting in higher absorption leading to high magnitude of the response as observed. The results from the measured phase of the response versus modulation frequency are also in agreement with the discussed absorbed mechanism. The absorption of the YBCO pattern is also measured to depend on the electrical conductivity of the YBCO film and our results show that there is an optimum electrical conductivity for having maximum absorption for this detector. Simulation results for this structure confirm the experiments showing that at electrical conductivity value of $\mathrm{1.33\times 10^{5}}$ S/m we have the maximum absorption for our device. These observations promise design of versatile THz and millimeter-wave detectors with potential for applications in medical and security imaging.

Multiphysics simulation of a superconducting bolometer working in a portable cryostat

We present the characterization and the numerical simulation of a high-temperature superconducting bolometer based on an YBa2Cu3O7-x (YBCO) film, which is patterned in serpentine elements and selectively modified by means of micro-collimated high-energy heavy-ion irradiation. The local irradiation of YBCO yields to a controlled reduction of the critical temperature and of the critical current, but the resistance versus temperature slope is preserved near Tc. In this way, only the irradiated part of the YBCO films is used for detecting infrared radiation, while the pristine one serves for electro-thermal feedback. The bolometer has been engineered in a portable cryostat, which is equipped with an optical window for suitably filtering the spectrum of the incoming electromagnetic radiation. The optimization of the cryostat has been performed with modelling by finite element method of the whole apparatus, along with simulations of the bolometer response.

Benefits of Bolometer Joule Stepping and Joule Pulsing

We introduce the `Joule stepping' technique, whereupon a constantly-biased bolometer has its bias voltage modified by a small additional step. We demonstrate this technique using a composite NTD semiconductor bolometer and a pulsing device which sends an extra step in voltage. We demonstrate the results of the technique over a range of bias voltages at 100, 200, and 300 mK. We find that Joule stepping allows us to directly measure long thermal tails with low amplitudes in the bolometer response, and could be a useful tool for quickly and easily understanding response functions of bolometric detectors. We also show that the derivative of the Joule step is equivalent to the bolometer response to a $\delta$-pulse (or Joule pulse), which allows for greater understanding of fast transient behaviour.

Bolometric Effect in Bi2 O2 Se Photodetectors.

Bi2 O2 Se is emerging as a photosensitive functional material for optoelectronics, and its photodetection mechanism is mostly considered to be a photoconductive regime in previous reports. Here, the bolometric effect is discovered in Bi2 O2 Se photodetectors. The coexistence of photoconductive effect and bolometric effect is generally observed in multiwavelength photoresponse measurements and then confirmed with microscale local heating experiments. The unique photoresponse of Bi2 O2 Se photodetectors may arise from a change of hot electrons during temperature rises instead of photoexcited holes and electrons. Direct proof of the bolometric effect is achieved by real-time temperature tracking of Bi2 O2 Se photodetectors under time evolution after light excitation. Moreover, the Bi2 O2 Se bolometer shows a high temperature coefficient of resistance (-1.6% K-1 ), high bolometric coefficient (-31 nA K-1 ), and high bolometric responsivity (>320 A W-1 ). These findings offer a new approach to develop bolometric photodetectors based on Bi2 O2 Se layered materials.

Bi2Te3 photoconductive detector under weak light

Bi2Te3 − xSex photoconductive detectors are attractive due to their linear photo-response (LPR), potential in ultrabroadband photo-detection, and compatibility with CMOS technology. However, as a fundamental issue for photo-detectors, the weak-light photo-response of Bi2Te3 − xSex detectors was covered by the bolometric response, the photo-thermoelectric effect, and the 300 K background black-body radiation from the optical window. Here, using a window-less system, we systematically measure the weak-light photo-response of a Bi2Te3 photoconductive detector. The bolometric response and photo-thermoelectric effect are carefully excluded. It shows that LPR can persist to a small light power density of P < 10−8 W/cm2. Meanwhile, the response is maximized at ∼80 K temperature. We suggest that the LPR is rooted in the unique carrier recombination configuration of Bi2Te3, which can result in a constant lifetime for light-generated carriers. The concerned trap level is manifested by a negative photo-response under reduced light intensity. The signature of surface state related signal is presented as a photo-response with the maximum at ∼10 K temperature, which is fragile under increased light intensity. Although the window-less photo-response measurement is at its early stage, it provides a perspective which is different from that of the traditional optical-window based measurement.

Graphene Aerogel Based Bolometer for Ultrasensitive Sensing from Ultraviolet to Far-Infrared.

This work uncovers that free-standing partly reduced graphene aerogel (PRGA) films in vacuum exhibit extraordinarily bolometric responses. This high performance is mainly attributed to four structure characteristics: extremely low thermal conductivity (6.0-0.6 mW·m-1·K-1 from 295 to 10 K), high porosity, ultralow density (4 mg·cm-3), and abundant functional groups (resulting in tunable band gap). Under infrared radiation (peaked at 5.8-9.7 μm), the PRGA film can detect a temperature change of 0.2, 1.0, and 3.0 K of a target at 3, 25, and 54 cm distance. Even through a quartz window (transmissivity of ∼0.98 in the range of 2-4 μm), it can still successfully detect a temperature change of 0.6 and 5.8 K of a target at 3 and 28 cm distance. At room temperature, a laser power as low as 7.5 μW from a 405 nm laser and 5.9 μW from a 1550 nm laser can be detected. The detecting sensitivity to the 1550 nm laser is further increased by 3-fold when the sensor temperature was reduced from 295 K to 12 K. PRGA films are demonstrated to be a promising ultrasensitive bolometric detector, especially at low temperatures.

Annealing Temperature-Dependent Terahertz Thermal-Electrical Conversion Characteristics of Three-Dimensional Microporous Graphene.

Three-dimensional microporous graphene (3DMG) possesses ultrahigh photon absorptivity and excellent photothermal conversion ability and shows great potential in energy storage and photodetection, especially for the not well-explored terahertz (THz) frequency range. Here, we report on the characterization of the THz thermal-electrical conversion properties of 3DMG with different annealing treatments. We observe distinct behavior of bolometric and photothermoelectric responses varying with annealing temperature. Resistance-temperature characteristics and thermoelectric power measurements reveal that marked charge carrier reversal occurs in 3DMG as the annealing temperature changes between 600 and 800 °C, which can be well explained by Fermi-level tuning associated with oxygen functional group evolution. Benefiting from the large specific surface area of 3DMG, it has an extraordinary capability of reaching thermal equilibrium quickly and exhibits a fast photothermal conversion with a time constant of 23 ms. In addition, 3DMG can serve as an ideal absorber to improve the sensitivity of THz detectors and we demonstrate that the responsivity of a carbon nanotube device could be enhanced by 12 times through 3DMG. Our work provides new insight into the physical characteristics of carrier transport and THz thermal-electrical conversion in 3DMG controlled by annealing temperature and opens an avenue for the development of highly efficient graphene-based THz devices.