Two BN compounds Amm 2 BN and P 321 BN are predicted in this work by random strategy combined with group and graph theory, and the physical properties of Amm 2 BN and P 321 BN are systematically investigated by density functional theory. Each of the proposed BN compounds is dynamically, thermally and mechanically stable. The anisotropy properties of Amm 2 BN and P 321 BN are investigated by the three-dimensional surface plotting's of Poisson's ratio, Young's modulus, and shear modulus. Moreover, the electronic band structures of Amm 2 BN and P 321 BN are study by the Heyd-Scuseria-Ernzerhof (HSE06) hybrid functional, and it is found that Amm 2 BN and P 321 BN are indirect gap semiconductor materials, while the P 321 BN can be considered as a quasi-direct band gap of semiconductors with the band gap of 3.775 eV. • Two novel BN polymorphs are proposed. • P 321 BN is a semiconductor with quasi-direct band gap. • Amm 2 BN is a superhard material.
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