Breakdown Voltage Research Articles

Low contact resistance and high breakdown voltage of AlGaN/GaN HEMT grown on silicon using both AlN/GaN superlattice and Al0.07Ga0.93N back barrier layer

In this study, the growth of a high-quality AlGaN/GaN high electron mobility transistor (HEMT) heterostructure on silicon (Si) by metal–organic chemical vapor deposition was investigated by utilizing both the AlN/GaN superlattice (SL) and Al0.07Ga0.93N back barrier (BB) techniques. An atomic force microscope and high-resolution x-ray diffractometer confirm a low surface roughness of 0.26–0.34 nm and the formation of a high-quality AlN/GaN SL and GaN channel. The AlGaN/GaN heterostructures exhibit a high electron mobility of up to 1700 cm2 V−1∙s and a high carrier concentration density of (1.02–1.06 × 1013 cm−2) for both heterostructures. The AlGaN/GaN HEMT devices demonstrate a low specific contact resistivity (ρ c) of 2.7 × 10−6 Ω·cm2 and a low contact resistance (RC ) of 0.3 Ω·mm for the heterostructure with a BB layer. Furthermore, the DC characteristics demonstrate that incorporating Al0.07Ga0.93N BB in the heterostructure results in a 19.2% increase in lateral breakdown voltage (with a 10 µm spacing) and a 27.5% increase in vertical breakdown voltage (at 1 mA cm−2) compared to heterostructures without Al0.07Ga0.93N BB within the AlN/GaN SL structure. Moreover, an improvement of 10.6% in the maximum saturation current (I DS) and 15.2% in on-resistance (R ON) has been achieved for the device fabricated on an Al0.07Ga0.93N BB structure. The insertion loss of the buffer layer improves to −1.40 dB mm−1 at 40 GHz. Consequently, the proposed heterostructure investigated in this study demonstrates suitability for electronic device applications.

Breakdown voltage enhancement and specific on-resistance reduction in depletion-mode GaN HEMTs by co-modulating electric field

Breakdown voltage enhancement and specific on-resistance reduction in depletion-mode GaN HEMTs by co-modulating electric field

Irreducible IrO2 Anode Co-Catalysts for PEM Fuel Cell Voltage Reversal Mitigation and Their Stability Under Start-Up/Shut-Down Conditions

Irreducible IrO2 Anode Co-Catalysts for PEM Fuel Cell Voltage Reversal Mitigation and Their Stability Under Start-Up/Shut-Down Conditions

A 4H-SiC JFET with a monolithically integrated temperature sensor

In this paper, we present a monolithically integrated temperature sensor for a 4H-SiC JFET. This uses a lateral resistor formed by the P+ gate implant. The sensor resistance is dependent on the number of ionized dopants, which increases with temperature. Drift-diffusion simulations considering device self-heating have been carried out, which show the JFET exhibits a breakdown voltage of 1480 V and a nominal threshold voltage (Vth) of −4.3 V. We show that the sensor has a high degree of linearity (R2) of 0.996 between 25–150∘C. Breakdown voltage of the JFET with the integrated sensor is found to reduce as the spacing (S) between the gate junction, the adjacent floating guard ring (FGR) and the sensor junction increases. However, it is found that a large variation in sensor current (ΔIsens) is experienced in the off-state if S is small. An optimum value of S = 0.95 µm was found to maintain 90% of the JFET breakdown voltage, whilst only exhibiting ΔIsens= 3.4%. The impact of contact resistance to the total sensor resistance is ≤1%. In addition, the sensor robustness during switch-off is good, due to the high doping in the P+ layer. The proposed sensor can be integrated into 4H-SiC JFET without any modification of existing process flows, or additional mask layers to provide real-time temperature monitoring with high accuracy.

Piezo2 voltage-block regulates mechanical pain sensitivity.

PIEZO2 is a trimeric mechanically-gated ion channel expressed by most sensory neurones in the dorsal root ganglia. Mechanosensitive PIEZO2 channels are also genetically required for normal touch sensation in both mice and humans. We previously showed that PIEZO2 channels are also strongly modulated by membrane voltage. Specifically, it is only at very positive voltages that all channels are available for opening by mechanical force. Conversely, most PIEZO2 channels are blocked at normal negative resting membrane potentials. The physiological function of this unusual biophysical property of PIEZO2 channels, however, remained unknown. We characterized the biophysical properties of three PIEZO2 ion channel mutations at an evolutionarily conserved Arginine (R2756). Using genome engineering in mice we generated Piezo2R2756H/R2756H and Piezo2R2756K/R2756K knock-in mice to characterize the physiological consequences of altering PIEZO2 voltage sensitivity in vivo. We measured endogenous mechanosensitive currents in sensory neurones isolated from the dorsal root ganglia and characterized mechanoreceptor and nociceptor function using electrophysiology. Mice were also assessed behaviourally and morphologically. Mutations at the conserved Arginine (R2756) dramatically changed the biophysical properties of the channel relieving voltage block and lowering mechanical thresholds for channel activation. Piezo2R2756H/R2756H and Piezo2R2756K/R2756K knock-in mice that were homozygous for gain of function mutations were viable and were tested for sensory changes. Surprisingly, mechanosensitive currents in nociceptors, neurones that detect noxious mechanical stimuli, were substantially sensitized in Piezo2 knock-in mice, but mechanosensitive currents in most mechanoreceptors that underlie touch sensation were only mildly affected by the same mutations. Single-unit electrophysiological recordings from sensory neurones innervating the glabrous skin revealed that rapidly-adapting mechanoreceptors that innervate Meissner's corpuscles exhibited slightly decreased mechanical thresholds in Piezo2 knock-in mice. Consistent with measurements of mechanically activated currents in isolated sensory neurones essentially all cutaneous nociceptors, both fast conducting Aδ-mechanonociceptors and unmyelinated C-fibre nociceptors were substantially more sensitive to mechanical stimuli and indeed acquired receptor properties similar to ultrasensitive touch receptors in Piezo2 knock-in mice. Mechanical stimuli also induced enhanced ongoing activity in cutaneous nociceptors in Piezo2 knock-in mice and hyper-sensitive PIEZO2 channels were sufficient alone to drive ongoing activity, even in isolated nociceptive neurones. Consistently, Piezo2 knock-in mice showed substantial behaviourally hypersensitivity to noxious mechanical stimuli. Our data indicate that ongoing activity and sensitization of nociceptors, phenomena commonly found in human chronic pain syndromes, can be driven by relieving the voltage-block of PIEZO2 ion channels. Indeed, membrane depolarization caused by multiple noxious stimuli may sensitize nociceptors by relieving voltage-block of PIEZO2 channels.

Piezo2 voltage-block regulates mechanical pain sensitivity.

PIEZO2 is a trimeric mechanically-gated ion channel expressed by most sensory neurones in the dorsal root ganglia. Mechanosensitive PIEZO2 channels are also genetically required for normal touch sensation in both mice and humans. We previously showed that PIEZO2 channels are also strongly modulated by membrane voltage. Specifically, it is only at very positive voltages that all channels are available for opening by mechanical force. Conversely, most PIEZO2 channels are blocked at normal negative resting membrane potentials. The physiological function of this unusual biophysical property of PIEZO2 channels, however, remained unknown. We characterized the biophysical properties of three PIEZO2 ion channel mutations at an evolutionarily conserved Arginine (R2756). Using genome engineering in mice we generated Piezo2R2756H/R2756H and Piezo2R2756K/R2756K knock-in mice to characterize the physiological consequences of altering PIEZO2 voltage sensitivity in vivo. We measured endogenous mechanosensitive currents in sensory neurones isolated from the dorsal root ganglia and characterized mechanoreceptor and nociceptor function using electrophysiology. Mice were also assessed behaviourally and morphologically. Mutations at the conserved Arginine (R2756) dramatically changed the biophysical properties of the channel relieving voltage block and lowering mechanical thresholds for channel activation. Piezo2R2756H/R2756H and Piezo2R2756K/R2756K knock-in mice that were homozygous for gain of function mutations were viable and were tested for sensory changes. Surprisingly, mechanosensitive currents in nociceptors, neurones that detect noxious mechanical stimuli, were substantially sensitized in Piezo2 knock-in mice, but mechanosensitive currents in most mechanoreceptors that underlie touch sensation were only mildly affected by the same mutations. Single-unit electrophysiological recordings from sensory neurones innervating the glabrous skin revealed that rapidly-adapting mechanoreceptors that innervate Meissner's corpuscles exhibited slightly decreased mechanical thresholds in Piezo2 knock-in mice. Consistent with measurements of mechanically activated currents in isolated sensory neurones essentially all cutaneous nociceptors, both fast conducting Aδ-mechanonociceptors and unmyelinated C-fibre nociceptors were substantially more sensitive to mechanical stimuli and indeed acquired receptor properties similar to ultrasensitive touch receptors in Piezo2 knock-in mice. Mechanical stimuli also induced enhanced ongoing activity in cutaneous nociceptors in Piezo2 knock-in mice and hyper-sensitive PIEZO2 channels were sufficient alone to drive ongoing activity, even in isolated nociceptive neurones. Consistently, Piezo2 knock-in mice showed substantial behaviourally hypersensitivity to noxious mechanical stimuli. Our data indicate that ongoing activity and sensitization of nociceptors, phenomena commonly found in human chronic pain syndromes, can be driven by relieving the voltage-block of PIEZO2 ion channels. Indeed, membrane depolarization caused by multiple noxious stimuli may sensitize nociceptors by relieving voltage-block of PIEZO2 channels.

Corrosion behavior of combination of laser beam welded UNS S32304 + SS304L in 3.5% NaCl solution

This study investigates the corrosion behavior of laser beam-welded UNS S32304 and SS304L in 3.5% NaCl solutions, focusing on the effects of temperature. The primary objective is to enhance the understanding of corrosion resistance in welded materials and inspire advancements in corrosion mitigation strategies. The methodology involves assessing corrosion resistance under varying temperatures and comparing the performance of laser beam welding (LBW) with that of the base metals. Scanning electron microscopy analysis reveals effective passivation, while quantitative analysis indicates differences in chloride ion coverage between the weld metal and base metals. Tafel plots and electrochemical impedance spectroscopy demonstrate enhanced corrosion potential and improved barrier properties for the weld metal. Results indicate a marginal reduction in corrosion resistance at 50 °C for both base metals. LBW metals corrosion resistance demonstrates superior performance, with only 5% reduction in breakdown potential compared to 10% in base metals. Compared to the base metal, it exhibits a substantial reduction in corrosion rate, ranging from 60 to 75%. This supports enhanced corrosion resistance and material stability. Additionally, similar results are observed after the analysis with scanning electron microscopy images, reinforcing the efficacy of LBW in improving corrosion resistance of LBW UNS S32304 and SS304L. These findings underscore the potential of LBW for applications requiring robust corrosion performance. By contributing to the understanding of the corrosion behavior of laser beam-welded materials, this study addresses a critical research gap in material science and corrosion engineering. Future research may explore long-term durability and corrosion resistance under diverse environmental conditions to further elucidate the mechanisms driving the observed differences in corrosion behavior.

A fast-switching low-loss field-stop IGBT with dual control gate of SIPOS material

A fast-switching low-loss field-stop insulated gate bipolar transistor with a dual control gate (DIGBT) of a semi-insulating polycrytalline silicon (SIPOS) material is proposed in this paper. Because the SIPOS has uniform high resistance, it has an approximate linear electric potential distribution. When DIGBT conducts, the higher electric potential on SIPOS causes the P-type drift region (P-drift) to generate an inversion layer of electrons, adjusting the number of carriers and making the generation of non-equilibrium carriers no longer dependent on the doping concentration in P-drift (Nd) but on the electric potential distribution on SIPOS. Therefore, it can solve the contradiction among the breakdown voltage, forward voltage drop [VCE(sat)], turn-off time (toff), and turn-off loss (Eoff) caused by the Nd. Through Technology Computer Aided Design (TCAD) simulation, the VCE(sat) of DIGBT is 30.6% lower than that of SJFS IGBT. Meanwhile, DIGBT reduces the toff by 62.8% while reducing the Eoff by 83.0% compared to SJFS IGBT. In addition, the static latch-up I–V and the forward biased safe operating area of the DIGBT have been significantly improved. This paper adjusts the number of carriers through the characteristics of SIPOS material, enabling the above-mentioned physical phenomena to be applied in insulated gate bipolar transistor power devices and achieving device performance breakthroughs.

Study on a p-GaN HEMT with composite passivation and composite barrier layers

A novel structure of p-GaN high-electron-mobility transistor (HEMT) is proposed and studied. It features two composite layers. One is the composite passivation (CP) layer consisting of Si3N4 and high-permittivity (HK) film. The other is a composite barrier (CB) layer consisting of Al x Ga1−x N/AlN/Al0.23Ga0.77N. Due to the coordinated effect of CP and CB, the specific on-resistance (R ON, SP) can be reduced under the premise of ensuring breakdown voltage (BV). Meanwhile, since the HK film in CP introduces a mechanism to automatically compensate the hot electrons trapped by surface states, the current collapse effect could be suppressed. According to the simulation results, in comparison with the conventional p-GaN HEMT, the proposed one using TiO2 as the HK material and using Al-component of 0.35 for Al x Ga1−x N gains a 29.5% reduction in R ON, SP while getting a 9.8% increase in BV, which contributes to a 50.5% decrease in the energy loss during one cycle at 200 kHz. It is also demonstrated by the simulation results that the current collapse in the proposed device is reduced by 28.6%. Thereby, a promising p-GaN HEMT with improved performance and reliability is invented.

Strain‐Engineered Unified SiNx Deposition for Device Passivation and Capacitance Dielectric in GaN Monolithic Microwave Integrated Circuit

Silicon nitride (SiNx) is used for device passivation and capacitance dielectric in GaN monolithic microwave integrated circuits. However, this is a conflicting requirement as passivation requires SiNx to cause tensile strain, and capacitance dielectric primarily demands a high breakdown voltage and large dielectric constant for SiNx, leading to a damaged AlGaN surface during deposition. Two independent SiNx depositions under two different conditions (silicon‐ and nitrogen‐rich) are usually carried out to meet both requirements. Herein, a solution for a unified deposition through interfacial strain analysis on an AlGaN/GaN heterostructure grown on 6H‐SiC imposed by thin film silicon nitride (SiNx), deposited using inductively coupled plasma chemical vapor deposition system is proposed. The strain analysis is done using Raman spectroscopy. The surface morphology of the SiNx is studied using atomic force microscopy. The breakdown characteristics are ascertained from measurements on high electron mobility transistors and metal–insulator–metal capacitors.

Experimental and statistical investigation on the dielectric breakdown of magneto nanofluids for power applications

The insulating oil serves the dual purpose of providing insulation and cooling within transformers. This investigation aims to explore the impact of various nanoparticles on the dielectric breakdown voltage (BDV) of dielectric oils. The study examines the effect of the concentration of magnetic nanoparticles on the dielectric breakdown voltage of insulating oils. Nanoparticles such as iron (II, III) oxide (Fe3O4), cobalt (II, III) oxide (CO3O4), and ferrous phosphide (Fe3P) were utilized to create nanofluids with carrier mediums consisting of mineral oil and synthetic ester oil. BDV determination was conducted using a VDE and S–S electrode system according to IEC 60156 standards. Nanofluid were prepared using a two-step method, and their concentrations ranged from 0.01 g/L, 0.02 g/L, and 0.04 g/L in base oils. Twelve iterations were conducted for each prepared nanofluid, and breakdown voltage measurements were recorded. The results indicate a noteworthy enhancement in the breakdown voltage of nanofluids. The statistical analysis was performed on the dielectric property of nanofluid samples for better breakdown accuracy. The maximum enhancement at specific nanoparticle concentrations was shown by each nanofluid. The results show that under the S–S electrode configuration, the greatest overall enhancement was observed for Fe3P in mineral oil, with an enhancement of 70.05%, and Fe3O4 in synthetic ester oil, with an enhancement of 46.29%.

High-Performance Aqueous Zinc-Organic Battery with a Photo-Responsive Covalent Organic Framework Cathode.

Covalent organic framework (COF) materials, known for their robust porous character, sustainability, and abundance, have great potential as cathodes for aqueous Zn-ion batteries (ZIBs). However, their application is hindered by low reversible capacity and discharge voltage. Herein, a donor-acceptor configuration COF (NT-COF) is utilized as the cathode for ZIBs. The cell exhibits a high discharge voltage plateau of ≈1.4V and a discharge capacity of 214 mAh g-1 at 0.2 A g-1 when utilizing the Mn2+ electrolyte additive in the ZnSO4 electrolyte. A synergistic combination mechanism is proposed, involving the deposition/dissolution reactions of Zn4SO4(OH)6·4H2O and the co-(de)insertion reactions of H+ and SO4 2- in NT-COF. Meanwhile, the NT-COF with a donor-acceptor configuration facilitates efficient generation and separation of electron-hole pairs upon light exposure, thereby enhancing electrochemical reactions within the battery. This leads to a reduction in charging voltage and internal overvoltage, ultimately minimizing electricity consumption. Under ambient weather conditions, the cell exhibits an average discharge capacity of 430 mAh g-1 on sunny days and maintains consistent cycling stability for a duration of 200 cycles (≈19 days) at 0.2 A g-1. This research inspires the advancement of Zn-organic batteries for high-energy-density aqueous electrochemical energy storage systems or photo-electrochemical batteries.

Transformer oil electrical–thermal characteristics analysis and evaluation

Transformer oil plays the role of heat dissipation and insulation in power transformers, and its electrical and thermal characteristics are directly related to the stable operation of the transformer. At the same time, it is important to master the electric–thermal characteristics of transformer oil for transformer state evaluation, latent fault prediction, and maintenance planning. Based on this, the gas production rule and electrical characteristics of transformer oil under accelerated aging are studied in this paper. First, the experimental platform for power transformer aging is established to accelerate the aging of power transformers. Second, the accelerated aging transformer oil is taken as the research object, and the power frequency, DC, lightning, and gas chromatography are measured and analyzed. Finally, a transformer oil aging evaluation model is established, which takes into account four factors: carbon and oxygen gas factors in transformers, life loss factors calculated by hotspot temperature, hydrocarbon gas factors dissolved in transformer oil, and oil quality factors, and conducts aging evaluation. The conclusion shows that the T parameter proposed in this paper can effectively evaluate the quality of transformer oil. When T is less than or equal to 0.6, there is no aging of the oil. When T is greater than 0.6 and less than 1, the transformer oil has been aging, but it is not manifested. Those are parameters whose chromatography and breakdown voltage are not far beyond the IEEE standard. When T = 1, the aging of oil with significant changes in gas content and breakdown voltage can be observed. When T is greater than 1, the oil has undergone serious aging.

Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor

This letter reports the demonstration of lateral AlN Schottky barrier diodes (SBDs) on single-crystal AlN substrates by metalorganic CVD (MOCVD) with an ultra-low ideality factor (η) of 1.65, a high Schottky barrier height of 1.94 eV, a breakdown voltage (BV) of 640 V, and a record high normalized BV by the anode-to-cathode distance. The device current was dominated by thermionic emission, while most previously reported AlN SBDs suffered from defect-induced current with higher η (>4). This work represents a significant step towards high-performance ultra-wide bandgap AlN-based high-voltage and high-power devices.

Effect of Acceptor Traps in GaN Buffer Layer on Source/Drain Contact Resistance in AlGaN/GaN High Electron Mobility Transistors

As‐grown GaN buffer layers have a significant electron concentration, which causes an increase in leakage current and a decrease in the breakdown voltage, VBR, of GaN High Electron Mobility Transistors (HEMTs). To prevent this, deep acceptor traps of density, NAT, are added to the GaN layer during growth. While a study on the effect of NAT on VBR is available in the literature, that on the effect of NAT on contact resistance, Rc, of source/drain contacts is lacking. Herein, the following is established using technology computer‐aided design simulations calibrated with measured current–voltage characteristics of ungated AlGaN/GaN structures: 1) Rc increases significantly with NAT and with the depth of the trap level from the conduction band. For trap level 2.5 eV below the conduction band, Rc doubles for an increase in NAT from 1 × 1016 to 5 × 1017 cm−3. 2) The variation of Rc with temperature is non‐monotonic. Over a temperature range of 300–450 K, Rc is nearly constant with temperature for NAT = 1 × 1016 cm−3 and decreases by 20% for NAT = 5 × 1017 cm−3, when traps are 2.5 eV below the conduction band. Also, the degradation of the transfer and output characteristics of GaN HEMTs due to a notable increase in Rc due to NAT is investigated.

Spectroscopic performance of Low-Gain Avalanche Diodes for different types of radiation

LGADs (Low-Gain Avalanche Diodes or Detectors) are a type of silicon Avalanche Photo-Diodes originally developed for the fast detection of minimum ionizing particles in high-energy physics experiments. Thanks to their fast timing performance, the LGAD paradigm enables detectors to accurately measure minimum ionizing particles with a timing resolution of a few tens of picoseconds. Such a performance is due to a thin substrate and the presence of a moderate signal gain. This internal gain of a few tens is enough to compensate for the reduced charge deposition in the thinner substrate and the noise of fast read-out systems. While LGADs are optimized for the detection of minimum ionizing particles for high-energy particle detectors, it is critical to study their performance for the detection of different types of particle, such as X-rays, gamma-rays, or alphas. In this paper, we evaluate the gain of three types of LGADs: two devices with different geometries and doping profiles fabricated by Brookhaven National Laboratory, and one fabricated by Hamamatsu Photonics with a different process.Since the gain in LGADs depends on the bias voltage applied to the sensor, pulse-height spectra have been acquired for bias voltages spanning from the depletion voltage up to the breakdown voltage. The signal-to-noise ratio of the generated signals and the shape of their spectra allow us to probe the underlying physics of the multiplication process.

Breakdown calculation of zoning tests by positive lightnings

To simulate a natural lightning strike, the breakdown should occur within 1–3 μs in an aircraft lightning zoning test. However, the breakdown voltage–time characteristic of the combined gap is hard to derive because of the complex breakdown process. In this paper, a series of positive lightning impulse discharge tests in a rod electrode–floating aircraft model–plate combined gap were conducted. The leader propagation processes in both sub-gaps were observed using a high-speed camera. The potential of the floating aircraft model was analyzed. We propose a potential calculation model for the floating aircraft during the leader propagation phase. After fitting test data, an empirical formula for the connected streamer plasma was given. Taking that model into account, the calculation result of the average breakdown time of the combined gap has an error of <5.7%.

Improvement of electrical performance in Normally-Off GaN MOSFET with regrown AlGaN layer on the Source/Drain region

A normally-off GaN MOSFET is successfully fabricated by using the selective regrowth technique (SRT) with regrown AlGaN layer on source/drain (S/D) region. The GaN MOSFET with regrown AlGaN layer and Lg of 10 μm shows enhanced electrical performance such as maximum drain current (ID,max) of 57 mA/mm, maximum transconductance (gm,max) of 11 mS/mm, and field-effect mobility (μFE) of 59 cm2/V·s, respectively, compared to the GaN MOSFET with n+-GaN selective regrowth in S/D region. This is because of the high 2DEG density formed by AlGaN/GaN heterojunction in S/D region. Moreover, to accommodate the poor structural quality of the narrow region regrowth of AlGaN layer on the S/D region, wide regrown AlGaN layer is applied to the GaN MOSFET. Especially, the off-state breakdown voltage improves from 25 V to 192 V with the improved structural quality of wide regrown AlGaN layer and optimized structure and the application of the 70-nm thick SiO2 passivation. These result shows that GaN MOSFET with wide regrown AlGaN layer on S/D region is beneficial to achieving high-quality and uniform normally-off GaN MOSFETs with excellent electrical performance.

Enhancement-mode Ga2O3 FETs with an unintentionally doped (001) β-Ga2O3 channel layer grown by metal-organic chemical vapor deposition

High-quality unintentionally doped (UID) (001) β-Ga2O3 homoepitaxial films were grown on native substrates through metalorganic CVD. The surface parallel grooves were repaired under low temperature and pressure conditions, reaching the surface roughness of 2.22 nm and the high electron mobility of 74.6 cm2/Vs. Enhancement-mode MOSFETs were fabricated on the UID β-Ga2O3 film, showing a positive turn-on threshold gate voltage of 4.2 V and a breakdown voltage of 673 V. These results can serve as a reference for (001)-oriented lateral Ga2O3 power transistors and may contribute to the development of Ga2O3 power devices.

Displacement Damage Effect of Proton Irradiation on Vertical β-Ga2O3 and SiC Schottky Barrier Diodes (SBDs)

In this study, we fabricated vertical schottky barrier diodes (SBDs) based on wide bandgap semiconductor beta-phase gallium oxide (β-Ga2O3) and silicon carbide (SiC), respectively, and conducted proton irradiation experiments to comparatively analyze the radiation hardness of the SBDs. The effects of proton radiation on the performance of SBDs were assessed through measurements of forward current, capacitance, and breakdown characteristics. Both devices exhibited degradation in current and capacitance characteristics following proton irradiation, attributed to displacement damage (DD). Notably, the β-Ga2O3-based SBD demonstrated more pronounced deterioration compared to the SiC-based device, despite similar vacancy distributions as confirmed by SRIM simulation. Moreover, a decrease in contact radius correlated with exacerbated degradation in the current characteristics of the β-Ga2O3-based SBD. Following proton irradiation, breakdown voltages of both devices increased due to elevated resistance induced by displacement damage. While both β-Ga2O3 and SiC-based SBDs experienced displacement damage under high fluence proton irradiation, the extent of performance degradation varied depending on the dimensions and quality of epitaxial and substrate layers.