Bismuth Selenide Research Articles

Ultralow Contact Thermal Resistance between Bismuth Selenide Nanoribbons Achieved by Current-Induced Annealing.

Thermal resistance at interfaces/contacts stands as a persistent and increasingly critical issue, which hinders ultimate scaling and the performance of electronic devices. Compared to the extensive research on contact electrical resistance, contact thermal resistance and its mitigation strategies have received relatively less attention. Here, we report on an effective, in situ, and energy-efficient approach for enhancing thermal transport through the contact between semiconducting nanoribbons. By applying microampere-level electrical currents to the contact between Bi2Se3 nanoribbons, we demonstrate that the contact thermal resistance between two nanoribbon segments is reduced dramatically by a factor of 4, rendering the total thermal resistance of two ribbon segments with a contact approximately the same as that of the corresponding single continuous nanoribbon of the same length. Analysis suggests that the ultralow contact thermal resistance is due to enhanced phonon transmission as a result of enhanced adhesion energy at the contact, with marginal contributions from direct electron-phonon coupling, even for ohmic contacts. Our work introduces a broadly applicable electrical treatment approach to various contacts between conducting and semiconducting materials, which has important implications for the design and operation of nanoelectronic devices and energy converters.

Investigation of bismuth selenide’s structural stability and tunable bandgap under exposure to acoustic shock waves for solar cell and aerospace applications

Bismuth selenide is a promising semiconductor for optoelectronics and energy conversion, including solar cells and aerospace applications. However, it degrades at high temperatures, affecting stability. According to the previous literature, we can solve this problem and easily tune under high pressure, but no reports are available for response against acoustic shock waves. To explore this, commercially available Bi2Se3 was purchased and tested under acoustic shock wave exposure. Bi2Se3 was subjected to 100, 200, 300, and 400 acoustic shock waves with 0.59 MPa transient pressure at 520 K temperature and 1.5 Mach number. Before and after shock-loaded Bi2Se3 samples were characterized using XRD, Raman, UV-DRS, PL, and FE- SEM and EDX. Under acoustic shock waves, Bi2Se3 exhibits increased crystallite size and reduced strain rate, promoting good thermal stability. It also shows a smaller bandgap and enhanced PL intensity, which ensures efficient solar cell operation. As a result, the material demonstrates improved thermal insulation and durability, which are crucial for stability and protection in extreme conditions for aerospace applications. These improvements make Bi2Se3 more suitable for solar cell and aerospace applications.

Electrodeposition of Bi2Se3 on conductive substrates: Influence of electrolyte temperature on morphology, crystalline structure, and optical properties

Bismuth selenide (Bi2Se3) is a semiconductor of great interest for application in energy conversion systems. In this work, the impact of electrolyte temperature on the morphology, crystalline structure, and optical properties of electrodeposited Bi2Se3 films was studied on several conductive substrates. The layers were grown by potentiostatic deposition with electrolytes at 25 °C (RT) and 60 °C on Cr, ITO, and Au substrates. The SEM analyses show that compact and smooth films are obtained when the electrolyte is heated, whereas rough layers are formed at RT depositions. The XRD measurements indicated that the growth depends on substrates and electrolyte temperature, with the samples grown over Au demonstrating a higher crystalline quality. TEM analyses revealed nanostructured regions with monocrystalline SAED patterns are formed when the films are grown on Au at RT, while for the same substrate the depositions with electrolyte at 60 °C result in regions with a polycrystalline nature. The optical characteristics revealed bandgap values close to 1.50 eV that are obtained by adjusting the electrodeposition conditions.

Intercalation-enhanced topological material Bi2Se3: Tuning charge carrier and phonon dynamics for advanced optoelectronic and terahertz applications

The field of topological materials (TMs) is experiencing significant advancements due to their unique surface states, which offer considerable potential for optoelectronics and terahertz (THz) applications. Intercalation in TMs can effectively modulate these surface states, thereby altering electronic and optical properties and enhancing functionalities. This approach enables the tailoring of material properties for specific applications, broadening the utility of TMs across various technological domains. This study focuses on understanding the charge carrier and phonon dynamics in bismuth selenide (Bi2Se3) intercalated with various metals (AxBi2Se3, where A = Ag, Cr, Ni, Mn, Sm, Zn). We examine carrier trapping, carrier relaxation through optical and acoustic phonons, charge recombination processes, and variations in carrier temperature with probe delay lifetimes. Additionally, we explore coherent optical phonons (COPs) in MIBS, which oscillate at THz frequencies and have potential applications in THz generation and detection. Achieving tunability in the THz frequency of COP modes is a significant challenge; however, our research establishes a correlation between optical and structural properties and the dependence of COP frequencies on effective metal intercalation. This comprehensive investigation elucidates the intricate interplay between surface carriers and phonon dynamics in intercalated TMs, highlighting promising advancements for diverse technological applications, including spintronics, optoelectronics, and THz technology.

Properties of bismuth based Bi2A3 (A = S, Se, Te) chalcogenides for optoelectronic and thermoelectric applications

Structural, electronic, optical, mechanical, thermoelectric and dielectric properties of binary Bi2A3 (A = S, Se, Te) chalcogenide semiconductors are studied by first-principles approach. Bismuth sulfide (Bi2S3) is found to be structurally stable in orthorhombic structure while bismuth selenide (Bi2Se3) and bismuth telluride (Bi2Te3) are stable in trigonal structure. Calculated mechanical properties reveal that all three Bi2A3 (A = S, Se, Te) compounds fulfil the mechanical stability criteria. Band structure calculations reveal that the Bi2S3 exhibits direct optical band gap (Eg = 1. 58 eV) which lies in the near-infrared (NIR) region, while the calculated Eg of Bi2Se3 and Bi2Te3 are found to be 0.53 eV and 0.35 eV, respectively lying in the far-infrared region. For Bi2S3 and Bi2Se3 compounds, the calculated dielectric properties show strong anisotropic behavior, while negligible anisotropic dielectric behavior is observed for Bi2Te3. Calculated optical properties show that all three Bi2A3 compounds possess high absorption coefficient (> 104 cm−1). For all three Bi2A3 (A = S, Se, Te) compounds, the calculated optical conductivity show prominent peak corresponding to the occurrence of optical conduction at energies 3.36 eV, 2.65 eV and 2.02 eV respectively. Calculated optical results support the results deduced from band structures and density of states spectra. Optical properties and dielectric behavior suggest that the Bi2S3 compound has suitable band gap and has potential to use for photovoltaic applications while Bi2A3 (A = Se, Te) compounds could be used in infrared detectors and other optical devices. Calculated thermal properties reveal that the Bi2A3 (A = S, Se, Te) chalcogenides could be potential materials for thermoelectric applications.

Bi2Se3/PAAS Hydrogels with Photothermal and Antioxidant Properties for Bacterial Infection Wound Therapy by Improving Vascular Function and Regulating Glycolipid Metabolism.

Skin is the largest organ in the human body, and it is also the most important natural barrier. However, some accidents can cause skin damage. Bacterial infections and inflammatory reactions can hinder wound healing. Therefore, eliminating bacterial infections and regulating oxidative stress are essential. The use of antibiotics is no longer sufficient because of bacterial resistance. The development of new nanomaterials provides another way of thinking about bacterial drug resistance. In this study, bismuth selenide is modified with polyethylpyrrolidone to obtain a 2D nanomaterial with negligible toxicity and then added to a sodium polyacrylate hydrogel, which is nontoxic and has strong tissue adhesion and a weak antibacterial effect. To further enhance antibacterial performance, photothermal therapy is a good strategy. Under near-infrared light, Bi2Se3/PAAS shows a strong bactericidal effect. Bi2Se3/PAAS hydrogels also have certain antioxidant effects and are used to remove excess free radicals from wound infections. The effective therapeutic effect of Bi2Se3/PAAS/NIR on methicillin-resistant Staphylococcus aureus (MRSA) infection is further verified in animal models. Transcriptome analysis reveals that the Bi2Se3/PAAS hydrogel improves the function of vascular endothelial cells, regulates glucose and lipid metabolism, and promotes the healing of infected wounds.

Improvement in thermoelectric figure of merit of Bi2Se3 crystal with Sulfur substitution

Bismuth Selenide has gained a great deal of attention as a thermoelectric material owing to its lower toxicity compared to Bi2Te3 based materials. In this work, Sulfur substitution in Bi2Se3 is carried out by the vertical Bridgman method and the influence of Sulfur on the structural, electrical and thermal properties of Bi2Se3 was studied. The thermoelectric figure of merit (ZT) was calculated from electrical conductivity, Seebeck coefficient and thermal conductivity, which were measured from 303 K to 773 K. Sulfur incorporation did not improve the electrical conductivity of Bi2Se3 but proved to be beneficial in improving the Seebeck coefficient and reducing thermal conductivity. Hence, the calculated figure of merit of Bi2Se2.7S0.3 crystal comes out to be 0.72 at 543 K, which is higher than that of pure Bi2Se3 crystal, which is 0.31 at 533 K.

In vivo toxicity evaluation and antibacterial assessment of vanadium doped Bi2Se3 synthesized by cost effective method

Bismuth selenide-based nanomaterials are introduced as theranostic agents, primarily enhancing their antimicrobial, anti-cancerous, antitumor, and antioxidant properties. Pure Bi2Se3 and V doped Bi2Se3 with V = 0.07 g, 0.12 g, and 0.15 g were synthesized by using Sol-gel Technique. X-ray Diffraction (XRD) patterns demonstrated that the manufactured samples were crystalline in nature having rhombohedral structure. The average crystallite sizes of VxBi2-xS3 were calculated by Scherrer formula in the range (24.9–11.0 nm). The average crystallite size reduced as doping concentrations increased (0–0.15 g). The FTIR (Fourier transform infrared) spectra confirms that the peaks corresponds to 900–600 cm−1 indicates Bi–Se bond stretching, whereas vibrations exhibit peaks between 704 cm−1 - 830 cm−1 in doped samples correspond to V–O bond. UV–Visible analysis shows that the band gap of doped Bi2Se3 increased from (2.57 eV–2.90 eV) having standard error 0.02, 0.01, 0.02, and 0.02 respectively as the concentrations of doping increased (0.0–0.15 g), respectively. SEM (Scanning electron microscopy) study of pure Bi2Se3 showed nanosized particles, and for doped, a clear change in morphology occurred with the particles tending to agglomerate. EDAX also confirms the purity of synthesized samples. XPS analysis confirms the presence of Bi, Se and Vanadium along with chemisorbed oxygen. Antibacterial potential of synthesized samples was analyzed against Pseudomonas, Escherichia coli and cocci bacteria, which showed that the vanadium doped bismuth selenide has greater zone of inhibition than undoped bismuth selenide. Pseudomonas shows more ZOI (Zone of Inhibition) than E.coli and cocci. The maximum inhibition zone was 25 mm against Pseudomonas for V0.15Bi1.85Se3. The In-Vivo toxicity experiment was also applied on mice's (Swiss Albino) with a higher dosage of 20 mg per kg of the prepared doped sample. The blood samples were collected and examined after 3rd, 7th, 14th and 21st day of treatment. The entire treatment does not cause any severe damage to mice. An evaluation of a p-value based on hematological and biochemical data was non-significant this ensures that vanadium doped Bi2Se3 nanoparticles are non-toxic and biocompatible. This work proves that V-doped Bi2Se3 is good for further study in many other Applications in the biomedical field, such as photo thermal therapy, imaging etc.

Layered Bismuth Selenide with a Kinetics‐Enhanced Iodine Doping Strategy Toward High‐Performance Aqueous Potassium‐Ion Storage

AbstractAqueous potassium‐ion batteries with inherent safety, high abundance, and competitive hydrated ion‐radius point to future availability in energy storage. However, the extensively studied electrodes (metal‐oxides, Prussian‐blue‐analogues, etc.) typically suffer from undesirable capacities and sluggish kinetics owing to overwhelming ion diffusion barriers. Herein, for the first time, the metal chalcogenide bismuth selenide reinforced by iodine‐doping (I‐Bi2Se3) is implemented for high‐performance aqueous potassium‐ion storage. The co‐intercalation mechanism of potassium‐ion with proton in I‐Bi2Se3 is entirely revealed by operando synchrotron X‐ray diffraction and substantial ex‐situ analysis, and the excellent interlayer diffusion kinetics in the high‐conductive host are further enhanced by iodine‐doping, as proposed by theoretic calculations. Therefore, the resulting high diffusion coefficient and low interfacial transfer resistance endow I‐Bi2Se3 with superior rate performance (109.2 mAh g−1 at 10 A g−1) and cycling stability (91% capacity retention after 1200 cycles). Employing in hybrid‐ion batteries matching zinc metal, the highest reversible aqueous potassium‐ion storage to date of 316.8 mAh g−1 is demonstrated, permitting the establishment of reliable performance pouch cells. The promising aqueous potassium intercalation chemistry built in the improved metal chalcogenide is proven to be extendable to other hybrid‐ion devices, offering novel mechanistic insights and material practices for aqueous energy storage.

Structure and Morphology Controlled Growth of Bismuth Selenide Films with Tunable Transport Properties on H-Passivated Si(111) by Molecular Beam Epitaxy

Structure and Morphology Controlled Growth of Bismuth Selenide Films with Tunable Transport Properties on H-Passivated Si(111) by Molecular Beam Epitaxy

Near-field radiative thermal rectification assisted by Bi2Se3 sheet

The ability to control heat flux at the nanoscale opens up numerous exciting possibilities in modern electronics and the field of information processing. In this research, we propose a design with the focus on achieving efficient thermal rectification at moderate gap and relatively low temperature. This study centers on near-field thermal radiation between temperature dependent indium antimonide (InSb) and silicon carbide (3C-SiC) coated with bismuth selenide (Bi2Se3). Our investigation sheds light on the critical role played by the Bi2Se3 layer in enhancing various key parameters, including the net radiative flux, and thermal rectification efficiency (η). We achieved a substantial improvement in the η of a near-field radiative thermal rectifier (NFRTR) due to the presence of the Bi2Se3 sheet. This enhancement is contingent on factors such as the Fermi energy (Ef) of Bi2Se3, emitter temperature, and the vacuum gap (d). Our study culminated in the identification of an optimal design, achieving an impressive η of 75% at an emitter temperature (TH) of 350 K, with vacuum gap (d) set to 20 nm. Furthermore, increasing TH to 500 K resulted in even more promising outcomes, with the highest η reaching 93%. The need for operating the optimized device at moderate temperatures is to strike a balance between efficiency, safety, cost-effectiveness, and material compatibility. These findings represent a significant step forward in the development of efficient Bi2Se3-based NFRTRs, paving the way for future applications in thermal management, energy conversion systems, and thermal logic gates.

Tuning of power factor in bismuth selenide through Sn/Te co doping for low temperature thermoelectric applications

The physical parameters of solid-state produced tin and tellurium co-doped bismuth selenide polycrystalline crystals were described. Powder X-ray diffraction revealed the hexagonal structure in the samples’ phase domination. A field emission scanning electron microscope was used to analyze the surface microstructure. Thermoelectric properties such as Seebeck coefficient, electrical resistivity, and thermal conductivity were analyzed in the temperature range 10–350 K. The electrical resistivity of (Bi0.96Sn0.04)2Se2.7Te0.3 was found to be four times lower than that of pure Bi2Se3. Due to donor-like effects and antisite defects, the Seebeck coefficient demonstrates a p- to n-type semiconducting transition. When compared to pure Bi2Se3, power factor and thermoelectric figure of merit of (Bi0.96Sn0.04)2Se2.7Te0.3 is found to increase by 15 and 9 times respectively. Tellurium excess boosts tin vacancies, promoting the p to n-type transition in (Bi0.96Sn0.04)2Se2.7Te0.3, making it a good option for low temperature thermoelectric and sensor applications.

Wavelength-modulated polarity switch self-powered Bi2Se3/GaN heterostructure photodetector

Van der Waals and wide-bandgap materials-based heterostructures have garnered substantial attention in developing self-powered broadband photodetectors owing to their exceptional photovoltaic capabilities. These materials also hold great potential for breakthroughs in optoelectronics. However, limitations to low selectivity constrain the potential of heterostructures-based broadband detectors. Here, we design wavelength-selective polarity switching in a heterostructure photodetector consisting of bismuth selenide (Bi2Se3) and gallium nitride (GaN). The analysis revealed a positive photocurrent under ultraviolet-C illumination to visible wavelength, whereas a negative photocurrent under infrared wavelengths at zero applied bias. The exposure to distinct optical wavelengths leads to an inversion in the electric field polarity across the junction, resulting in polarity switching. The fabricated Bi2Se3/GaN self-powered ultra-broadband photonic device demonstrates a peak photoresponsivity of 584 mAW−1 (−297 mAW−1) at 355 nm (1405 nm) wavelength illumination and can detect weak signals up to 650 femto-watt. Our strategy revealed alternative avenues for developing polarity-switchable, self-powered ultra-broadband photodetectors, offering a first step towards creating wavelength-adaptable sensors for future applications.

Bismuth selenide nanoparticles enhance radiation sensitivity in colon cancer cells in-vitro

BackgroundRadiotherapy is one of the primary treatments for cancer, but it can cause damage to normal tissues and lead to side effects. The use of radiosensitizers can enhance the sensitivity of cancer cells to radiation, thereby reducing the amount of radiation required and minimizing damage to healthy tissues. Bismuth selenide nanoparticles (Bi2Se3 NPs) have been shown to have potential as radiosensitizers. Materials and methodsIn this study, we investigated the potential of Bi2Se3 NPs as a radiosensitizer in colon cancer cells (HCT-116) in vitro. The cells were treated with various concentrations of Bi2Se3 NPs and then exposed to ionizing radiation. The viability of the cells was assessed using the MTT assay, and the survival rate was evaluated. ResultsOur results showed that Bi2Se3 NPs significantly enhanced the sensitivity of colon cancer cells to ionizing radiation in a dose-dependent manner. The combination of Bi2Se3 NPs and radiation resulted in a significant decrease in cell viability and survival rate compared to radiation alone. ConclusionBi2Se3 NPs have the potential to be used as a radiosensitizer in the treatment of colon cancer. The findings of this study suggest that combining Bi2Se3 NPs with radiation may enhance the effectiveness of radiotherapy and reduce the mortality rate associated with colon cancer. Further studies are needed to investigate the safety and efficacy of this approach in vivo.

Signal oscillations in helium scattering by bismuth atoms in the low energy range

Low Energy Ion Scattering (LEIS) analysis of bismuth selenide (Bi2Se3), a strong 3D topological insulator, revealed oscillations of the detected signal in dependence on primary ion beam energy. Bismuth is a part of the group of elements where oscillatory behaviour was already noticed, such as gallium, indium, or lead. Generally, it is ascribed to quasi-resonant charge exchange processes between primary ion and target atom. Moreover, clear differences exist between data for target atoms in elemental form and for atoms in compound form. A study of Bi signal yields in different material forms was performed for primary He+ projectiles within the energy range from 0.50 to 6.00 keV. A foil of pure Bi, Bi2Se3, Bi2O3 and thin Bi films deposited on several substrates (SiO2, CuOx) by Molecular Beam Epitaxy were analysed. The energy shift in the position of oscillations was observed when the oxygen atoms were present at the surface and bonded to Bi atoms. A description of the Bi ion yield variation is provided to facilitate the quantification process in LEIS.

Artificial photosynthetic approach steers hydrogen evolution with bismuth selenide nanoflakes decorated silicon nanowires

Photoelectrochemical (PEC) water splitting offers a promising path toward green hydrogen production, but developing efficient photocatalysts remains a critical hurdle for large-scale adoption. In this study, we introduced a novel hybrid heterostructure for PEC water splitting, consisting of bismuth selenide (Bi2Se3) decorated silicon nanowires (Si NWs). This configuration achieved a high current density of 10.3 mA/cm2 at −1.2 V vs. RHE, along with an ABPE of 2.5 % at −0.8 V vs. RHE. Notably, these performance metrics surpass those of pristine Si NWs. The topological surface states in Bi-based layered chalcogenides, Bi2Se3 as cocatalysts with Si NWs, demonstrate robust charge transport which improves the conductivity of photoelectrodes in electrochemical reactions with high stability. Thus, the present study exploits the layered chalcogenides as an excellent cocatalyst for Si NWs that may lead to further advances in the hydrogen evolution reaction.

Bi2Se3 nanosheets prepared by solvothermal method for high performance NIR photodetector

Bismuth selenide (Bi2Se3) nanosheets, a member of the AV-BVI (A = Sb, Bi, B = S, Se, Te) family of metal chalcogenide semiconductor materials, have a large surface area, a tunable bandgap that is dependent on the thickness of the atomic layer, and potential applications in photocatalysis, photothermal therapy, and photodetectors, among other fields. Here, we describe the synthesis of Bi2Se3 nanosheets using a simple solvothermal method, resulting in a smooth surface and a well-crystalline structure. The XRD results indicate that the Bi2Se3 nanosheets belong to the hexagonal crystal structure, with lattice constants of a = 0.4140 nm, b = 0.4140 nm, and c = 2.8636 nm. Bi2Se3 nanosheet photodetectors, which have a Schottky contact between the nanosheets and the electrodes, exhibit a notable light response to an 850 nm laser. The device displays a switch ratio of 50 when operated at a voltage of 0.6 V and an irradiance of 2.87 W/cm2 (@ 850 nm). The switching speed of the device was measured in terms of rise and decay times, measured to be 126 ms and 85 ms respectively. It is evident from the obtained results that high performance nanoscale photodetectors can be made efficiently from 2D Bi2Se3 nanosheets.

Modulations of superradiance and quantum entanglement of quantum emitters in terahertz frequency

We study the superradiance and entanglement phenomena between two quantum emitters (QEs) operating at terahertz frequencies, facilitated by the presence of a topological insulator bismuth selenide (Bi2Se3). Controlled by the hyperbolic phonon polaritons and electron surface state in the terahertz frequency range, the interaction between QEs is significantly enhanced both within and outside the hyperbolic bands. Moreover, the entanglement between two QEs through Bi2Se3 is studied in detail. Certain initial entanglement states undergo sudden death of entanglement when the system is in non-interaction. However, in the cases of moderate or strong interaction, the entanglement can be revive after experiencing the sudden death phenomenon. These findings hold significant implications for controlling the interaction of QEs and their potential applications in the fields of quantum metrology and quantum imaging in the terahertz frequency region.

Distinct Quantum States in Topological Insulator Surfaces of Nanowires and Nanoribbons of Bismuth Selenide (Bi2Se3)

AbstractTopological insulators (TIs) exhibit unconventional quantum phases that can be tuned by external quantum confinements. The geometry of the surface of 3D TIs plays a crucial role. For example, the geometrical crossover from 2D surfaces to a 1D cylinder results in a novel state with a Spin‐Berry Phase (SBP). Surface‐Enhanced Raman Scattering (SERS) with a sub‐micron spatial resolution is utilized to study the quantum‐confinement effects of quasi‐relativistic electrons along the perimeter of the circular bismuth selenide (Bi2Se3) nanowires. The presence of diameter‐dependent SERS in nanowires can be attributed to the self‐interference effect of the electronic wave‐function along the circumferential direction of the TI nanowires. Nanoribbons with rectangular cross‐section do not show this effect. Further gold nanoparticles are applied as plasmonic SERS sensors attached to the distinct topological surface states to manipulate quasi‐relativistic surface states of nanoribbons and nanowires. This technique enables to discriminate between different geometries of TI surface states and also opens a novel pathway to probe the quantum properties of topological surface states.

Synergistic activation of lamellar bismuth selenide anchored functionalized carbon nanofiber for detecting hazardous carbendazim in environmental water samples

Pesticides pollute natural water reservoirs through persistent accumulation. Therefore, their toxicity and degradability are serious issues. Carbendazim (CBZ) is a pesticide used against fungal infections in agricultural crops, and its overexploitation detrimentally affects aquatic ecosystems and organisms. It is necessary to design a logical, efficient, and field-deployable method for monitoring the amount of CBZ in environmental samples. Herein, a nano-engineered bismuth selenide (Bi2Se3)/functionalized carbon nanofiber (f-CNF) nanocomposite was utilized as an electrocatalyst to fabricate an electrochemical sensing platform for CBZ. Bi2Se3/f-CNF exhibited a substantial electroactive surface area, high electrocatalytic activity, and high conductivity owing to the synergistic interaction of Bi2Se3 with f-CNF. The structural chemical compositions and morphology of the Bi2Se3/f-CNF nanocomposite were confirmed by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and field-emission scanning electron microscopy (FESEM). Electrochemical analysis was carried out using cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and differential pulse voltammetry (DPV). The voltammetry and impedance experiments exposed that the Bi2Se3/f–CNF–modified GCE has attained adequate electrocatalytic function with amended features of electron transportation (Rct = 35.93 Ω) and improved reaction sites (0.082 cm2) accessible by CBZ moiety along with exemplary electrochemical stability (98.92%). The Bi2Se3/f-CNF nanocomposite exhibited higher sensitivity of 0.2974 μA μM−1cm−2 and a remarkably low limit of detection (LOD) of 1.04 nM at a broad linera range 0.001–100 μM. The practicability of the nanocomposite was tested in environmental (tap and pond water) samples, which supports excellent signal amplification with satisfactory recoveries. Hence, the Bi2Se3/f-CNF nanocomposite is a promising electrode modifier for detecting CBZ.