Abstract
The physical parameters of solid-state produced tin and tellurium co-doped bismuth selenide polycrystalline crystals were described. Powder X-ray diffraction revealed the hexagonal structure in the samples’ phase domination. A field emission scanning electron microscope was used to analyze the surface microstructure. Thermoelectric properties such as Seebeck coefficient, electrical resistivity, and thermal conductivity were analyzed in the temperature range 10–350 K. The electrical resistivity of (Bi0.96Sn0.04)2Se2.7Te0.3 was found to be four times lower than that of pure Bi2Se3. Due to donor-like effects and antisite defects, the Seebeck coefficient demonstrates a p- to n-type semiconducting transition. When compared to pure Bi2Se3, power factor and thermoelectric figure of merit of (Bi0.96Sn0.04)2Se2.7Te0.3 is found to increase by 15 and 9 times respectively. Tellurium excess boosts tin vacancies, promoting the p to n-type transition in (Bi0.96Sn0.04)2Se2.7Te0.3, making it a good option for low temperature thermoelectric and sensor applications.
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