Bipolar Resistive Switching Memory Research Articles

Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching Memory

The retention failure of bipolar oxide-based resistive switching memory is investigated. A new physical model is proposed to elucidate the typical retention failure behavior of the oxide-based resistive switching memory with a sudden resistance transition, which is quite different from that of the traditional memories. In the new proposed model, the temperature- and bias-dependent failure probability and failure time of the devices can be quantified. A temperature- and voltage-acceleration method is developed to evaluate the retention of resistive switching memories.

Highly Stable SrZrO3 Bipolar Resistive Switching Memory by Ti Modulation Layer

In this paper, the resistive switching characteristic of the SrZrO3(SZO)-based resistance random access memory (RRAM) composed of Pt/Ti/SZO/LaNiO3(LNO) are investigated. The electrical testing results show that the device has lower operation voltage, lower compliance current, long retention behavior, and stable resistance ratio over 104 s under 0.3 V reading voltage. It is demonstrated that the active metal Ti as an oxygen getter can modify the resistive switching property of the SZO based RRAM. After depositing all stack films, the post annealing (PA) treatment with various conditions was carried out to form the interfacial layer (TiOx) between Ti and SZO. By using X-ray Photoelectron Spectrometer (XPS) analysis, the Ti layer as an oxygen getter is confirmed. The better SZO based RRAM device can be made with the proper TiOx film formed by suitable annealing temperature and thickness of Ti layer.

Low power resistive switching memory using Cu metallic filament in Ge 0.2Se 0.8 solid-electrolyte

Bipolar resistive switching memory device using Cu metallic filament in Au/Cu/Ge 0.2Se 0.8/W memory device structure has been investigated. This resistive memory device has the suitable threshold voltage of V th > 0.18 V, good resistance ratio ( R High/ R Low) of 2.6 × 10 3, good endurance of >10 4 cycles with a programming current of 0.3 mA/0.8 mA, and 5 h of retention time at low compliance current of 10 nA. The low resistance state ( R Low) of the memory device decreases with increasing the compliance current from 1 nA to 500 μA for different device sizes from 0.2 μm to 4 μm. The memory device can work at very low compliance current of 1 nA, which can be applicable for extremely low power-consuming memory devices.

Highly Stable SrZrO3 Bipolar Resistive Switching Memory by Ti Modulation Layer

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Bipolar Resistive Switching Memory Using Cu Metallic Filament in Ge[sub 0.4]Se[sub 0.6] Solid Electrolyte

A bipolar resistive switching memory device with a low power operation (200 μA X 1.3 V) in a W/Ge 0.4 Se 0.6 /Cu/Al structure is investigated. A high quality Ge 0.4 Se 0.6 solid electrolyte is confirmed by X-ray photoelectron spectroscopy. The resistive memory device with a small via size of 0.2 μm has a large threshold voltage of >0.4 V, high resistance ratio (R high /R low ) of > 10 2 , and good uniformity. The switching mechanisms are due to the Cu metallic filament formation and dissolution from the Ge 0.4 Se 0.6 solid electrolyte under positive and negative biases, respectively, which have been confirmed by high resolution transmission electron microscopy image and energy-dispersive X-ray spectroscopy analysis. The strong Cu filament formation can also be investigated by monitoring the erase voltage and erase current. Good endurance of > 10 5 cycles is obtained. Excellent data retention characteristics at 85 °C are observed after 24 h of retention time, owing to the strong Cu metallic filament formation in the Ge 0.4 Se 0.6 solid electrolyte.

Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

A unified model is proposed to elucidate the resistive switching behavior of metal-oxide-based resistive random access memory devices using the concept of electron hopping transport along filamentary conducting paths in dielectric layer. The transport calculation shows that a low-electron-occupied region along the conductive filament (CF) is formed when a critical electric field is applied. The oxygen vacancies in this region are recombined with oxygen ions, resulting in rupture of the CFs. The proposed mechanism was verified by experiments and theoretical calculations. In this physical model, the observed resistive switching behaviors in the oxide-based systems can be quantified and predicted.

Stability and forward diode voltage characteristics of conductive epoxy resin bonded devices : I. Genner. IERE Conf. Hybrid Microelectronics, Loughborough p. 169. 9–11 Sept. 1975

Electroforming-free cerium oxide-based bipolar resistive switching memory devices have been deposited using radio frequency magnetron sputtering technique. These devices demonstrate two types of forming-free cells: some in the low-resistance state and the others in high-resistance state. The transmission electron microscopy and X-ray diffraction analyses illustrate the formation of tantalum oxynitride layer between tantalum nitride (TaN) and cerium oxide (CeOx), which looks to be responsible for the two types of cells as well as their memory performance. Ohmic and Poole–Frenkel conduction mechanisms are found to be responsible for charge transport in the low- and high-resistance states. The current–voltage characteristics and temperature dependence of resistance suggest that resistive switching mechanism in our TaN/CeOx/Pt devices may be explained by the model of connection and disconnection of filamentary paths made of oxygen vacancies. The reliability characteristics of TaN/CeOx/Pt devices indicate better endurance and stable retention performance at relatively lower programming voltages and larger memory window (OFF/ON resistance ratio ~ 103) at room temperature and at 100 °C.

Intraventricular conduction defects: Hübener, G.: Deutsche med. Wchnschr. 64: 1222, 1938

Bipolar resistive switching memory device using Cu metallic filament in Au/Cu/Ge0.2Se0.8/W memory device structure has been investigated. This resistive memory device has the suitable threshold voltage of Vth > 0.18 V, good resistance ratio (RHigh/RLow) of 2.6 × 103, good endurance of >104 cycles with a programming current of 0.3 mA/0.8 mA, and 5 h of retention time at low compliance current of 10 nA. The low resistance state (RLow) of the memory device decreases with increasing the compliance current from 1 nA to 500 μA for different device sizes from 0.2 μm to 4 μm. The memory device can work at very low compliance current of 1 nA, which can be applicable for extremely low power-consuming memory devices.