Abstract
In this paper, the resistive switching characteristic of the SrZrO3(SZO)-based resistance random access memory (RRAM) composed of Pt/Ti/SZO/LaNiO3(LNO) are investigated. The electrical testing results show that the device has lower operation voltage, lower compliance current, long retention behavior, and stable resistance ratio over 104 s under 0.3 V reading voltage. It is demonstrated that the active metal Ti as an oxygen getter can modify the resistive switching property of the SZO based RRAM. After depositing all stack films, the post annealing (PA) treatment with various conditions was carried out to form the interfacial layer (TiOx) between Ti and SZO. By using X-ray Photoelectron Spectrometer (XPS) analysis, the Ti layer as an oxygen getter is confirmed. The better SZO based RRAM device can be made with the proper TiOx film formed by suitable annealing temperature and thickness of Ti layer.
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