Bipolar Power Devices Research Articles

Power bipolar devices: Philippe Leturco Microelectron. Reliab.24, 313 (1984)

Power bipolar devices: Philippe Leturco Microelectron. Reliab.24, 313 (1984)

Measurement of recombination lifetime profiles in epilayers using a conductivity modulation technique

A new experimental techique is described to accurately measure the recombination lifetime profile in lightly doped epitaxial layers of thickness less than the minority-carrier diffusion length. This technique requires the use of a particular structure composed of a lateral p+-n-n+diode on the surface of the epilayer and a control electrode on the substrate layer. Using a conductivity modulation technique, the proposed measurement method is independent of recombination effects in the highly doped regions needed for every test structure. Moreover, the evaluation of lifetime profiles along the epilayer is made possible by varying the width of the conductivity modulated region through the control electrode bias. The measurement theory is developed for the high-injection regime, usually applicable to the lightly doped layers of bipolar power devices.

Power bipolar devices : Philippe Leturcq. Microelectron. Reliab.24, 313 (1984)

Power bipolar devices : Philippe Leturcq. Microelectron. Reliab.24, 313 (1984)

The insulated gate transistor: A new three-terminal MOS-controlled bipolar power device

A new three-terminal power device, called the insulated gate transistor (IGT), with voltage-controlled output characteristics is described. In this device, the best features of the existing families of bipolar devices and power MOSFET's are combined to achieve optimal device characteristics for low-frequency power-control applications. Devices with 600-V blocking capability fabricated using a vertical DMOS process exhibit 20 times the conduction current density of an equivalent power MOSFET and five times that of an equivalent bipolar transistor operating at a current gain of 10. Typical gate turn-off times have been measured to range from 10 to 50 µs.

Power bipolar devices

This paper deals with the specific aspects of bipolar device physics and with the problems posed by the design of their structure. Emphasis will be placed on the fundamental mechanisms which determine the on-state, the off-state and the switching performance. A number of relationships between operating characteristics and structure parameters are established. These relationships are useful for improving structure designs. The current-handling capability of high-voltage transistors is discussed thoroughly as a relevant example. Finally, the state of the art and trends of power bipolar devices are briefly reviewed.

Power bipolar devices : Philippe Leturcq. Microelectron. Reliab.24 (2), 313 (1984)

Power bipolar devices : Philippe Leturcq. Microelectron. Reliab.24 (2), 313 (1984)