Abstract
This paper deals with the specific aspects of bipolar device physics and with the problems posed by the design of their structure. Emphasis will be placed on the fundamental mechanisms which determine the on-state, the off-state and the switching performance. A number of relationships between operating characteristics and structure parameters are established. These relationships are useful for improving structure designs. The current-handling capability of high-voltage transistors is discussed thoroughly as a relevant example. Finally, the state of the art and trends of power bipolar devices are briefly reviewed.
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