The optical properties of ${\mathrm{Bi}}_{2}$${\mathrm{Sr}}_{2}$${\mathrm{CuO}}_{6}$ (2:2:0:1) and ${\mathrm{Bi}}_{2}$${\mathrm{Sn}}_{2}$${\mathrm{CaCu}}_{2}$${\mathrm{O}}_{8}$ (2:2:1:2) have been investigated by transmission electron-energy-loss spectroscopy. At low energy, ${\mathit{E}}_{\mathrm{loss}}$\ensuremath{\le}10.0 eV, common features are observed in the spectra of these two materials at ${\mathit{E}}_{\mathrm{loss}}$=0.0,\ensuremath{\sim}2.7,3.6, and 4.6 eV. The effective number of charges associated with these excitations has been estimated using the optical-sum rule, and from the ratio of effective charges in the two materials, the origin of this feature has been inferred based on the relative number of Cu-${\mathrm{O}}_{2}$ and Bi-O layers per formula unit. The effective-charge ratio for the free carriers at zero energy loss, ${\mathit{N}}_{2:2:1:2}$/${\mathit{N}}_{2:2:0:1}$=5.0, could not be used to determine whether the carriers were in the Cu-${\mathrm{O}}_{2}$ or Bi-O planes because the oxygen doping in the two materials was not known. But at ${\mathit{E}}_{\mathrm{loss}}$=2.7 and 3.6 eV, the effective-charge ratio is 2.6 indicating that these transitions are associated with the Cu-${\mathrm{O}}_{2}$ planes since the ratio is close to 2:1. The effective-charge ratio is 0.9 for ${\mathit{E}}_{\mathrm{loss}}$=4.6 eV suggesting that this excitation is localized in the Bi-O planes. If the two excitations in the Cu-${\mathrm{O}}_{2}$ layers of 2:2:0:1 and 2:2:1:2 are identified with the delocalized and localized charge-transfer reactions [Mark S. Hybertsen, Michael Schluter, and Niels E. Christensen, Phys. Rev. B 39, 9028 (1989)], then the three-band Hubbard parameters \ensuremath{\varepsilon}=${\mathrm{\ensuremath{\varepsilon}}}_{\mathit{p}}$-${\mathrm{\ensuremath{\varepsilon}}}_{\mathit{d}}$ and ${\mathit{U}}_{\mathit{p}\mathit{d}}$ (\ensuremath{\varepsilon} is the energy difference between the Cu 3d and O 2p levels and ${\mathit{U}}_{\mathit{p}\mathit{d}}$ is the Coulomb repulsion between two holes occupying adjacent Cu and O sites) are 1.8 and 0.9 eV, respectively, with an uncertainty of \ifmmode\pm\else\textpm\fi{}0.5 eV.