Abstract
X-ray photoemission results for Cr interaction on single-crystal Bi{sub 2}Sr{sub 2{minus}{ital x}}Ca{sub 1+{ital x}}Cu{sub 2}O{sub 8+{ital y}} demonstrate that interfaces nearly free of disruption can be formed by atom deposition at 20 K or by cluster assembly. For atom deposition at 20 K, a uniform metallic layer forms with only a slight reduction of Cu{sup 2+} bonding configurations, similar to that observed for nonreactive overlayers. This atom-assembled interface was stable when warmed to 300 K. Cluster assembly results in modification of the exposed Bi-O plane, but the Cu 2{ital p}{sub 3/2} emission shows no significant change because there was no change in Cu-O bonding. The irregular but complete layer of Cr on Bi{sub 2}Sr{sub 2{minus}{ital x}}Ca{sub 1+{ital x}}Cu{sub 2}O{sub 8+{ital y}} formed by cluster assembly exhibited limited reaction upon warming to 300 K. In contrast, interface formation at 300 K by atom deposition produced complete reduction of Cu{sup 2+}-like bonding within 30--50 A of the surface. These results demonstrate the competition between kinetic and thermodynamic processes.
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