The adsorption of water molecules on sulfur vacancies (VS and V2S2) and gold atoms embedded in the sulfur vacancies (AuS) of tungsten disulfide (WS2) monolayers (ML) decorated with zinc-oxide (ZnO)12 nanocages were studied using dispersion-corrected density functional theory. Since the WS2 monolayer is predominantly inert, the introduction of defect states into the mid-bandgap region is significant due to its chemical and physical implications. The possibility of turning from an electron acceptor (p-type) to an electron donor (n-type) semiconductor character, when the sulfur vacancy density is varied or if the sulfur vacancies are filled with gold atoms, was demonstrated. The binding energy of the Au atom forming the AuS defect and the diffusion energy barrier from the VS defect to an adjacent site for Au were determined as 2.99 and 2.16 eV, respectively. Consequently, the substitutional defect AuS remains attached to the ML. The adsorption energy showed that the water molecule is chemisorbed on AuS defect on WS2 (n-type). Also, the density of states suggests a clear response as the chemiresistive sensor. Besides, how zinc-oxide spherical nanocages behave as sensors for different relative humidity levels was discussed. The response to water molecules was significantly enhanced by the chemisorption of the (ZnO)12 spherical nanocage on WS2-AuS. These composed systems formed WS2-ZnO heterojunctions with differences in the electronic structure. The study provides a comprehensive outlook on analyte interactions with WS2 (n-type) and WS2-ZnO surfaces, which have been utilized in the design of semiconductor gas sensors.
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