Bimolecular Recombination Process Research Articles

Charge photogeneration and recombination dynamics in non-fullerene solar cells based on a polymer donor with a mono-fluorinated π-bridge.

Non-symmetric fluorine substitution is an important route for designing π-conjugated polymers for high-performance solar cells. However, excited state dynamics in a non-symmetric fluorinated polymer and solar cells are poorly understood. In this work, excited state dynamics in a neat mono-fluorinated polymer (PTzBI-dF) film and blend films (PTzBI-dF:Y6) were studied using time-resolved spectroscopy. For the neat donor film, we found the activation energy of the PTzBI-dF film transiting from radiative states to non-radiative states to be ∼58 meV. Besides, we found that both exciton diffusion coefficient and exciton diffusion length in the PTzBI-dF film are higher than those in the PTzBI-Cl film, which has no fluorinated π-bridge. The high exciton diffusion length of the PTzBI-dF film benefits from its long exciton lifetime (∼327.8 ps), which is much longer than that of the polymer donors such as P3HT and PM6. For PTzBI-dF:Y6 blend films, we found that the energy level offsets of the HOMO (0.13 eV) and LUMO (0.23 eV) are sufficient to dissociate the acceptor and donor excitons, respectively. Besides, we found that carrier recombination in PTzBI-dF:Y6 and PTzBI-Cl:Y6 blend films are dominated by bimolecular recombination processes, and thermal annealing treatment has a weak influence on the charge photogeneration and recombination process of the PTzBI-dF:Y6 film at an ultrafast time scale. Thus, this work is helpful for understanding photoelectrical conversion processes in non-symmetric fluorinated polymer-based solar cells.

The investigation of the kinetics of the losses of nonequilibrium current carriers in Cu-=SUB=-2-delta-=/SUB=-NiSnS-=SUB=-4-=/SUB=- (0≤delta≤0.2) quaternary copper compounds

By solid-phase synthesis from elemental Cu, Ni, Sn, and S samples Cu2-deltaNiSnS4 (0≤delta≤0.2) was prepared. The parameters of their crystal lattice have been refined. The lifetimes of photogenerated current carriers in Cu2-deltaNiSnS4 were estimated for the first time by the contactless time-resolved microwave photoconductivity method. This times turned out to be tau~7 ns, which is comparable with the literature data for the times in kesterites CZTS. Herewith, in kinetics of loses of photogenerated cureent carriers is observed predominance of bimolecular recombination processes over capture processes. Keywords: Cu2-deltaNiSnS4, onequilibrium current carriers, lifetimes, kinetics.

Photoluminescence spectroscopy of excitonic emission in CsPbCl3 perovskite single crystals

We analyzed low-temperature photoluminescence (PL) and the band edge excitonic emission in bulk halide perovskite CsPbCl3 single crystals. Strong near band edge excitonic emission is observed at 420 nm and a series of excitonic states was observed. Temperature-dependent PL measurements on cesium lead chloride over a wide temperature range from 13 K to 295 K revealed significant electron phonon coupling with a Huang-Rhys parameter ranging from 1.34 to 3.38. A primary experimental finding is that the near band edge PL emission shows existence of multiple sharp features at low temperatures that are attributable to free excitons, bound excitons, and their phonon replicas. The PL also shows evidence of band tailing effects due to disorder. We investigated the recombination mechanism of photogenerated charge carriers by means of time-resolved PL (TR-PL) spectroscopy at low temperatures and various excitation powers and observed competing mono- and bimolecular recombination processes. A dynamic model is proposed to describe the TR-PL. We observed both long-lived and short-lived recombination where the short-lived time decay is attributed to free exciton recombination, whereas the long-lived decay to bound exciton recombination involving traps due to intrinsic disorder.

Исследование кинетики гибели неравновесных носителей заряда в четверных соединениях меди Cu-=SUB=-2-delta-=/SUB=-NiSnS-=SUB=-4-=/SUB=- (0≤delta≤0.2)

By solid-phase synthesis from elemental Cu, Ni, Sn, and S samples Cu2 - δNiSnS4 was prepared . The parameters of their crystal lattice have been refined. The lifetimes of photogenerated current carriers in Cu2 - δNiSnS4 were estimated for the first time by the contactless time-resolved microwave photoconductivity method. This times turned out to be τ ≈ 7 ns, which is comparable with the literature data for the times in kesterites CZTS. Herewith, in kinetics of loses of photogenerated cureent carriers is observed predominance of bimolecular recombination processes over capture processes.

Nonexponential Photoluminescence Dynamics in an Inhomogeneous Ensemble of Excitons in WSe2 Monolayers

The spectral and spatiotemporal dynamics of photoluminescence in monolayers of transition metal dichalcogenide WSe2 obtained by mechanical exfoliation on a Si/SiO2 substrate is studied over a wide range of temperatures and excitation powers. It is shown that the dynamics is nonexponential and, for times t exceeding ∼50 ps after the excitation pulse, is described by a dependence of the form 1/(t + t0). Photoluminescence decay is accelerated with a decrease in the temperature and in the energy of emitting states. It is shown that the observed dynamics cannot be described by a bimolecular recombination process, such as exciton—exciton annihilation. A model that describes the nonexponential photoluminescence dynamics by taking into account the spread of radiative recombination times of localized exciton states in a random potential gives good agreement with experimental data.

Photocurrent transient measurements in MAPbI3 thin films

Methylammonium lead iodide (CH3NH3PbI3 or MAPbI3) is one of the hybrid perovskite materials most widely used in high performing perovskite solar cells. In this work, the charge carrier recombination process of MAPbI3 perovskite thin-film fabricated on corning 1737 glass substrate is studied by means of transient photocurrent measurements and the current decay curves after turning off the lights. The influences of temperature (25–70 °C), illumination time (30–90 s) and intensity of illumination (100–1000 W m−2) on the photocurrent response are studied. The photocurrent measurements are taken in vacuum to avoid the effect of atmospheric air and moisture, at an applied field of 100 V cm−1. The MAPbI3 film shows good photosensitivity with two orders of magnitude change in current when exposed to full intensity of light. As soon as the light is turned on, the current increases rapidly; however, a small decrease is observed before a stabilized current is achieved. The stabilized value of current does not depend upon exposure time. The current falls abruptly as soon as the light is turned off and then slowly reaches back the dark current value. The fast decay of photocurrent can be attributed to fast recombination of free electrons and hole having decay time constant approximately 100 ms and the slow decay corresponds to slow re-emission of trapped carriers which has at least 3–4 times higher decay time constants compared to the fast decay. Intensity-dependent photocurrent follows a power law (Iph ~ Φ γ), indicating predominantly bimolecular recombination process. The activation energy (Ea) estimated from the temperature-dependent dark current measurement is found to be ~ 210 meV.

Carrier recombination mechanism in CsPbBr3 revealed by time-resolved photoluminescence spectroscopy

We systematically investigate the recombination mechanism of photogenerated charge carriers in bulk $\mathrm{CsPbB}{\mathrm{r}}_{3}$ by means of time-resolved photoluminescence (TR-PL) spectroscopy at low temperature and various laser excitation powers. A dynamic recombination model is proposed to describe the TR-PL that predicts the time-dependent exciton and free-charge populations. It provides a clear representation of competing mono- and bimolecular recombination processes. A decrease in carrier lifetime with increasing laser intensity was observed that was attributed to exciton-exciton scattering. A bimolecular recombination coefficient of $\ensuremath{\sim}{10}^{\ensuremath{-}7}\phantom{\rule{0.16em}{0ex}}\mathrm{c}{\mathrm{m}}^{3}/\mathrm{s}$ was obtained for exciton recombination. As the concentration of photoexcited carriers increases, stronger exciton-exciton annihilation occurs. The exciton-exciton annihilation rate for $\mathrm{CsPbB}{\mathrm{r}}_{3}$ is $3.63\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}7}\phantom{\rule{0.16em}{0ex}}\mathrm{c}{\mathrm{m}}^{3}\phantom{\rule{0.16em}{0ex}}{\mathrm{s}}^{\ensuremath{-}1}$ at 10-mW laser power. Notably, the exciton-exciton annihilation rate in bulk material is comparable to that obtained for photoexcited $\mathrm{CsPbB}{\mathrm{r}}_{3}$ nanoscale quantum dots.

Influence of phenylethylammonium iodide as additive in the formamidinium tin iodide perovskite on interfacial characteristics and charge carrier dynamics

A combined electrical and time-resolved optical investigation of the perovskite formamidinium tin iodide (FASnI3) and its phenylethylammonium (PEA) derivative PEA0.08FA0.92SnI3, which recently achieved a power conversion efficiency of 9%, is presented to study the specifics of contact characteristics and charge carrier dynamics. Microstructured gold electrode arrays were used to investigate the charge transport across a metal-perovskite interface and through micrometers of the perovskite films. Symmetrical contact configuration enabled detailed polarization studies. Hysteresis in the current-voltage characteristics and a corresponding current-time behavior indicated limitations by charge transfer in the contacts. Hysteresis was less pronounced in PEA0.08FA0.92SnI3 compared with FASnI3. This is explained by a 2-dimensional interlayer at the contacts, which leads to decreased field-induced migration of ions at the contact. Carrier recombination in the bulk of FASnI3 films, however, was only slightly modified by the presence of PEA. Femtosecond broadband transient absorption experiments up to 1.5 ns provided rate constants for the Auger and bimolecular recombination processes in FASnI3 of k3 = 1 × 10−29 cm6 s−1 and k2 = 3.1 × 10−10 cm3 s−1, respectively. In PEA0.08FA0.92SnI3, no significant differences in k2 and an only slightly increased k3 = 2 × 10−29 cm6 s−1 were measured. In extension to previous photoluminescence studies, we found efficient cooling of hot carriers by coupling to optical phonons (τcop = 0.5 ps), which is even faster than in lead perovskites.

Organic solar cells based on anthracene-containing PPE–PPVs and non-fullerene acceptors

Lately, non-fullerene acceptors (NFAs) have received increasing attention for use in polymer-based bulk-heterojunction (BHJ) organic solar cells (OSCs), as improved photovoltaic performance compared to classical polymer–fullerene blends could be demonstrated. In this study, polymer solar cells based on a statistically substituted anthracene-containing poly(p-phenylene ethynylene)-alt-poly(p-phenylene vinylene)s (PPE–PPVs) copolymer (AnE-PVstat) as donor in combination with a number of different electron accepting materials were investigated. Strong photoluminescence quenching of the polymer donor indicates intimate intermixing of both materials. However, the photovoltaic performances were found to be poor compared to blends that use fullerene as acceptor. Time-delayed collection field (TDCF) measurements demonstrate: charge generation is field-independent, but bimolecular recombination processes limit the fill factor and thus the efficiency of devices.

Transient Photocurrent Elucidating Carrier Dynamics and Potential of Bulk Heterojunction Solar Cells Fabricated by Thermal Precursor Approach

Transient photocurrents are measured to clarify carrier dynamics in a series of bulk heterojunction solar cells that are composed of [6,6]‐phenyl‐C61‐butyric acid methyl ester (PCBM) and diketopyrrolopyrrole‐tetrabenzoporphyrin conjugates substituted by straight alkyl groups (Cn‐DPP‐BP), of which the device parameters are largely dependent on the length of the substituted alkyl groups (Cn). The time profile of the observed transients indicates the presence of both unimolecular and bimolecular charge recombination processes in the active layer of the cells. Analysis of the photocurrent decays detected at various bias voltages using a drift model that considers charge extraction by electrodes and charge recombination in the active layer enables elucidation of the charge drift mobility, the initial photocarrier density, and the charge recombination rate constants. The bimolecular recombination rate constant is correlated with Cn and this is the main factor that determines the power conversion efficiency (η) of the Cn‐DPP‐BP:PCBM solar cells. The Cn‐dependent fill factor can be interpreted in terms of the bias voltage dependence of the ratio between the extraction and recombination charges (Qex/Qre). Comparison of η and Qex/Qre at the short‐circuit condition predicts that η for the Cn‐DPP‐BP:PCBM solar cell can be potentially improved up to 6%.

The Effect of the Dielectric Constant and Ion Mobility in Light-Emitting Electrochemical Cells.

Light-emitting electrochemical cells (LEECs) are a promising low-cost option for display and solid-state lighting. In these devices, the interplay of mobile ions, electrons, and holes makes for rich physics that can be leveraged for high performance. One example of this interplay is in the formation and radiative decay of excitons-bound electron and hole pairs. Considerations from exciton binding and Langevin recombination suggest that a low dielectric constant (ϵ) would enhance emission. However, emission is also enhanced by the product of the bulk hole and electron concentrations, which in LEECs are enhanced by the motion of small mobile ions yielding high dielectric constants. These competing effects make it difficult to predict whether active layers with low or high dielectric constants will optimize device performance. Here, the effect of varying the dielectric constant on the performance of LEEC devices from ionic transition-metal complexes was studied by systematically exchanging the negative counterions paired with an iridium complex emitter. Electrochemical impedance spectroscopy, constant voltage and constant current device studies, and drift-diffusion simulations were performed. The results clarify the competing effects of Langevin bimolecular recombination and ion-assisted injection processes occurring in LEECs.

Ultrafast Exciton Dynamics in Shape-Controlled Methylammonium Lead Bromide Perovskite Nanostructures: Effect of Quantum Confinement on Charge Carrier Recombination

We report ultrafast spectroscopy investigations of photoinduced exciton dynamics in three novel CH3NH3PbBr3 perovskite nanostructures: nanocrystals (0D), nanowires (1D), and nanoplatelets (2D). Aided by analysis of UV–visible absorption and photoluminescence spectra, features in the transient absorption (TA) spectra are assigned to different charge carrier processes, time constants of which are determined in fitting the transient kinetics. Immediately after photoexcitation, the charge carrier thermalization process occurs within the instrument response function time (fwhm ∼ 350 fs) and results in a quasi-equilibrium distribution of charge carriers. It is followed by charge carrier cooling on a sub-picosecond time scale (τc ∼ 300 fs). The ensuing charge carrier recombination process obeys the rate law of a second-order reaction, which suggests that it occurs mainly via the bimolecular nongeminate recombination process. Dependence of the charge recombination rate constant (kr) on the initial charge carrier ...

Origin of Efficient Inverted Nonfullerene Organic Solar Cells: Enhancement of Charge Extraction and Suppression of Bimolecular Recombination Enabled by Augmented Internal Electric Field.

We report our effort to unravel the origin of efficient operation of nonfullerene organic solar cells (OSCs), based on a poly[4,8-bis(5-(2-ethylhexyl) thiophen-2-yl)benzo[1,2-b;4,5-b']dithiophene-2,6-diyl-alt-(4-(2-ethylhexyl)-3-fluorothieno[3,4-b]thiophene-)-2-carboxylate-2-6-diyl)](PTB7-Th):3,9-bis(2-methylene-(3-(1,1-dicyanomethylene)-indanone))-5,5,11,11-tetrakis(4-hexylphenyl)-dithieno[2,3-d:2',3'-d']-s-indaceno [1,2-b:5,6-b']dithiophene (ITIC) blend system. The effects of buildup of space charges, charge extraction, and bimolecular recombination processes on the performance and the stability of PTB7-Th:ITIC-based regular and reverse configuration OSCs are analyzed. It is found that the high-performing inverted PTB7-Th:ITIC OSCs benefit from the combined effects of (1) suppression of bimolecular recombination enabled by an augmented effective internal electric field and (2) improvement of charge extraction by avoiding the holes passing through ITIC-rich region, which would otherwise occur in a regular configuration cell. The inverted PTB7-Th:ITIC OSCs possess a significant improvement in the cell stability and a high power conversion efficiency of ∼8.0%, which is >29% higher than that of an optimized regular configuration control cell (6.1%).

Charge injection process in polymer: Fullerene composite diodes studied by spectroscopic techniques combined with bias application

Charge injection processes in polymer: fullerene composite diodes have been investigated for blend films of poly(3-hexylthiophene) (P3HT) and methanofullerene (PCBM) using spectroscopic techniques combined with bias application, termed a device modulation (DM) spectroscopic technique. The voltage dependence of DM signals under the dark condition demonstrates that injection of mobile carriers into P3HT in the blend diode occurs at much lower voltage than that for a P3HT diode, suggesting that the bulk-hetero junction structure of the blend film induces inhomogeneity in the energy level and partly lowers the barrier for carrier injection. Recombination processes of injected P3HT carriers for the blend device in the dark are analyzed by the frequency dependence of DM signals and found to be dominated by bimolecular recombination processes. The DM measurements under illumination demonstrate that, although charge injection under illumination occurs to the same extent as that in the dark condition, some photo-generated charge-transfer states at the interface of P3HT and PCBM are lost on a slow timescale by recombination with injected carriers.

Transient Absorption Kinetics Associated with Higher Exciton States in Semiconducting Single-Walled Carbon Nanotubes: Relaxation of Excitons and Phonons

We investigate the transient absorption kinetics due to excitons associated with the first and higher transition states in semiconducting single-walled carbon nanotubes at high excitation densities by means of femtosecond pump–probe spectroscopy. The time evolutions of absorption changes associated with the first, second, and third excitonic transition bands exhibit similar decay behavior; the decay is much longer than the exciton population decay observed by time-resolved luminescence measurements. From spectral shape analysis of the transient absorption spectra, it is found that the absorption change in the short time regime (<∼2 ps) is mainly due to the bimolecular Auger recombination process, reflecting the exciton population decay. The long-lasting decay behavior over ∼1 ns is attributed to the thermalization process of phonons generated during the inter- and intraband relaxation of excitons promoted to higher states by the Auger recombination process and the subsequent thermal diffusion to the surrounding surfactant and solvent.

Fast, Air‐Stable Infrared Photodetectors based on Spray‐Deposited Aqueous HgTe Quantum Dots

The ability to detect near‐infrared and mid‐infrared radiation has spawned great interest in colloidal HgTe quantum dots (QDs). In contrast to the studies focused on extending the spectral range of HgTe QD devices, the temporal response, another figure of merit for photodetectors, is rarely investigated. In this work, a single layer, aqueous HgTe QD based photoconductor structure with very fast temporal response (up to 1 MHz 3 dB bandwidth) is demonstrated. The device is fabricated using a simple spray‐coating process and shows excellent stability in ambient conditions. The origin of the remarkably fast time response is investigated by combining light intensity‐dependent transient photocurrent, temperature‐dependent photocurrent, and field‐effect transistor (FET) measurements. The charge carrier mobility, as well as the energy levels and carrier lifetimes associated with the trap states in the QDs, are identified. The results suggest that the temporal response is dominated by a fast bimolecular recombination process under high light intensity and by a trap‐mediated recombination process at low light intensity. Interestingly, it was found that the gain and time response of aqueous HgTe QD‐based photoconductors can be tuned by controlling the QD size and surface chemistry, which provides a versatile approach to optimize the photodetectors with selectable sensitivity and operation bandwidth.

Unified Study of Recombination in Polymer:Fullerene Solar Cells Using Transient Absorption and Charge-Extraction Measurements.

Recombination in the well-performing bulk heterojunction solar cell blend between the conjugated polymer TQ-1 and the substituted fullerene PCBM has been investigated with pump-probe transient absorption and charge extraction of photogenerated carriers (photo-CELIV). Both methods are shown to generate identical and overlapping data under appropriate experimental conditions. The dominant type of recombination is bimolecular with a rate constant of 7 × 10(-12) cm(-3) s(-1). This recombination rate is shown to be fully consistent with solar cell performance. Deviations from an ideal bimolecular recombination process, in this material system only observable at high pump fluences, are explained with a time-dependent charge-carrier mobility, and the implications of such a behavior for device development are discussed.

Long lived photoexcitation dynamics in π-conjugated polymer and fullerene blended films

We used continuous wave photoinduced absorption (PIA) spectroscopy to investigate long lived polarons in blend of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and regio-regular poly (3-hexylthiophene) (RR-P3HT), and in blend of PCBM and 2-methoxy-5-(2-ethylhexyloxy) poly(para-phenylenevinylene) (MEH-PPV). In millisecond time regime, delocalized polarons (DP) and localized polarons (LP) in RR-P3HT/PCBM as well as polarons in MEH-PPV/PCBM all exhibit dispersive bimolecular recombination process which was limited by the trap states, with the average lifetimes of those polarons inverse proportional to the square root of pump intensity (I). The recombination in RR-P3HT/PCBM was weak temperature dependence with small thermal activation energy, Δ for DPs and LPs of 25meV and 13meV, respectively; in contrast, Δ for polarons in amorphous MEH-PPV/PCBM was ∼160meV. Furthermore, we proved that the values of Δ for both of LP and DP increase, as well as the relatively intensity ratio of DP and LP decreases, in an intentionally degraded RR-P3HT/PCBM film. Overall, it is demonstrated that steady state photomodulation technique with thermal-activated-recombination analysis can be applied to evaluate polymer (dis)order in bulk heterojunction films.

Origin of Reduced Bimolecular Recombination in Blends of Conjugated Polymers and Fullerenes

AbstractBimolecular charge carrier recombination in blends of a conjugated copolymer based on a thiophene and quinoxaline (TQ1) with a fullerene derivative ((6,6)‐phenyl‐C71‐butyric acidmethyl ester, PC71BM) is studied by two complementary techniques. TRMC (time‐resolved microwave conductance) monitors the conductance of photogenerated mobile charge carriers locally on a timescale of nanoseconds, while using photo‐CELIV (charge extraction by linearly increasing voltage) charge carrier dynamics are monitored on a macroscopic scale and over tens of microseconds. Despite these significant differences in the length and time scales, both techniques show a reduced Langevin recombination with a prefactor ζ close to 0.05. For TQ1:PC71BM blends, the ζ value is independent of temperature. On comparing TRMC data with electroluminescence measurements it is concluded that the encounter complex and the charge transfer state have very similar energetic properties. The ζ value for annealed poly(3‐hexylthiophene) (P3HT):(6,6)‐phenyl‐C61‐butyric acid methyl ester (PC61BM) is approximately 10−4, while for blend systems containing an amorphous polymer ζ values are close to 1. These large differences can be related to the extent of charge delocalization of opposite charges in an encounter complex. Insight is provided into factors governing the bimolecular recombination process, which forms a major loss mechanism limiting the efficiency of polymer solar cells.

Photophysics in Single-Walled Carbon Nanotubes with (6,4) Chirality at High Excitation Densities: Bimolecular Auger Recombination and Phase-Space Filling of Excitons

The photophysics in single-walled carbon nanotubes (SWNTs) at high excitation densities has been attracting significant attention for exciton stability. Exciton–exciton interactions and an exciton Mott transition of quasi-one-dimensional excitons in SWNTs are of fundamental interest because the screening effect of the Coulomb interaction is suppressed in one-dimensional systems. In this study, we investigate exciton dynamics and a bimolecular Auger recombination process in SWNTs with (6,4) chirality using femtosecond transient absorption measurements at high excitation densities in the range of 2.4 × 1013–4.8 × 1015 photons cm–2 per pulse. Temporal evolutions of the change in the absorption coefficient are analyzed with an analytical expression for the bimolecular Auger recombination dynamics. We determine the Auger recombination coefficient and initial exciton number per tube, and the absorption cross section is also obtained. By using the phase-space filling model, the exciton size is estimated to be 3.1 ± 1.3 or 2.2 ± 1.0 nm, which depends on the corresponding wave function. Based on the estimated exciton size, the possibility of the Mott transition of quasi-one-dimensional excitons is discussed.