Charge injection process in polymer: Fullerene composite diodes studied by spectroscopic techniques combined with bias application

Abstract

Charge injection processes in polymer: fullerene composite diodes have been investigated for blend films of poly(3-hexylthiophene) (P3HT) and methanofullerene (PCBM) using spectroscopic techniques combined with bias application, termed a device modulation (DM) spectroscopic technique. The voltage dependence of DM signals under the dark condition demonstrates that injection of mobile carriers into P3HT in the blend diode occurs at much lower voltage than that for a P3HT diode, suggesting that the bulk-hetero junction structure of the blend film induces inhomogeneity in the energy level and partly lowers the barrier for carrier injection. Recombination processes of injected P3HT carriers for the blend device in the dark are analyzed by the frequency dependence of DM signals and found to be dominated by bimolecular recombination processes. The DM measurements under illumination demonstrate that, although charge injection under illumination occurs to the same extent as that in the dark condition, some photo-generated charge-transfer states at the interface of P3HT and PCBM are lost on a slow timescale by recombination with injected carriers.