The realization of organic light-emitting transistors (OLETs) with high quantum efficiencyand fast switching time is crucial for the development of highly integrated organicoptoelectronic systems. In order to reach such a goal, fabrication of devices withambipolar transport and high charge mobility values is needed. At present, organicmaterials having intrinsically ambipolar transport are restricted in number and showpoor performance. This limits their use in efficient and fast switching single layerambipolar OLETs. In this framework, we have taken the approach of combiningp-type and n-type materials in two complementary configurations. The first one isbased on realizing layered structures (bi-layer heterojunction) where materials aresequentially deposited. The second one is based on simultaneously evaporatingtwo materials with variable composition (bulk heterojunction) to form a mixedfilm. In this paper, the charge transport and electroluminescence properties ofOLETs based on these heterostructures are presented. A correlation betweenthe active layer structure and the electrical performances has been obtained bymeans of laser scanning confocal microscopy, here employed for morphology andspectroscopy analysis. Differences between the two approaches are critically discussed.
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