Bias Resistance Research Articles

Protective innate immunity against Pneumocystis does not require Stat6-dependent macrophage polarization.

Pneumocystis species are respiratory fungal pathogens that cause life-threatening opportunistic infections in immunocompromised hosts. Pneumocystis typically evade pulmonary innate immunity but are efficiently eradicated by a functional adaptive immune response. FVB/NJ mice are unique in that they display protective alveolar macrophage-dependent innate immunity against Pneumocystis, and remain resistant to infection even in the absence of CD4+ T lymphocyte function. FVB/NJ alveolar macrophages (AMs) were found to display an M2-biased phenotype at baseline, which was potentiated after stimulation with Pneumocystis, suggesting that macrophage polarization may dictate the outcome of the Pneumocystis-macrophage interaction. To determine whether Stat6, a key global regulator of M2 polarization, was required for FVB/NJ innate immunity, FVB Stat6-/- mice were generated. FVB Stat6-deficient AMs were markedly impaired in their ability to polarize to an M2 phenotype when stimulated with Th2 cytokines. However, FVB Stat6-/- mice remained highly resistant to infection, indicating that Stat6 signaling is dispensable for innate FVB/NJ resistance. Despite the loss of Stat6 signaling, primary AMs from FVB Stat6-/- mice maintained baseline expression of M2 markers, and also strongly upregulated M2-associated genes following direct stimulation with Pneumocystis. Additional FVB/NJ knockout strains were generated, but only FVB MerTK-/- mice showed a marginally increased susceptibility to Pneumocystis infection. Together, these findings demonstrate that effective FVB/NJ innate immunity against Pneumocystis does not require Stat6 signaling and suggest that alternative pathways regulate M2 bias and macrophage-mediated innate resistance in FVB/NJ mice.

Genome sequencing analysis of the pncA, rpsA and panD genes responsible for pyrazinamide resistance of Mycobacterium tuberculosis from Indonesian isolates.

Developing the most suitable treatment against tuberculosis based on resistance profiles is imperative to effectively cure tuberculosis patients. Whole-genome sequencing is a molecular method that allows for the rapid and cost-effective detection of mutations in multiple genes associated with anti-tuberculosis drug resistance. This sequencing approach addresses the limitations of culture-based methods, which may not apply to certain anti-TB drugs, such as pyrazinamide, because of their specific culture medium requirements, potentially leading to biased resistance culture results. Thirty-four M. tuberculosis isolates were subcultured on a Lowenstein-Jensen medium. The genome of these bacteria was subsequently isolated using cetyltrimethylammonium bromide. Genome sequencing was performed with Novaseq Illumina 6000 (Illumina), and the data were analysed using the GenTB and Mykrobe applications. We also conducted a de novo analysis to compare the two methods and performed mutation analysis of other genes encoding pyrazinamide resistance, namely rpsA and panD. The results revealed mutations in the pncA gene, which were identified based on the databases accessed through GenTB and Mykrobe. Two discrepancies between the drug susceptibility testing and sequencing results may suggest potential instability in the drug susceptibility testing culture, specifically concerning PZA. Meanwhile, the results of the de novo analysis showed the same result of pncA mutation to the GenTB or Mykrobe; meanwhile, there were silent mutations in rpsA in several isolates and a point mutation; no mutations were found in the panD gene. However, the mutations in the genes encoding pyrazinamide require further and in-depth study to understand their relationship to the phenotypic profile. Compared to the conventional culture method, the whole-genome sequencing method has advantages in determining anti-tuberculosis resistance profiles, especially in reduced time and bias.

Can Professionals Resist Cognitive Bias Elicited by the Visual System? Reversed Semantic Prime Effect and Decision Making in the Workplace: Reaction Times and Accuracy.

Information that comes from the environment reaches the brain-and-body system via sensory inputs that can operate outside of conscious awareness and influence decision processes in different ways. Specifically, decision-making processes can be influenced by various forms of implicit bias derived from individual-related factors (e.g., individual differences in decision-making style) and/or stimulus-related information, such as visual input. However, the relationship between these subjective and objective factors of decision making has not been investigated previously in professionals with varying seniority. This study explored the relationship between decision-making style and cognitive bias resistance in professionals compared with a group of newcomers in organisations. A visual "picture-picture" semantic priming task was proposed to the participants. The task was based on primes and probes' category membership (animals vs. objects), and after an animal prime stimulus presentation, the probe can be either five objects (incongruent condition) or five objects and an animal (congruent condition). Behavioural (i.e., accuracy-ACC, and reaction times-RTs) and self-report data (through the General Decision-Making Scale administration) were collected. RTs represent an indirect measure of the workload and cognitive effort required by the task, as they represent the time it takes the nervous system to receive and integrate incoming sensory information, inducing the body to react. For both groups, the same level of ACC in both conditions and higher RTs in the incongruent condition were found. Interestingly, for the group of professionals, the GDMS-dependent decision-making style negatively correlates with ACC and positively correlates with RTs in the congruent condition. These findings suggest that, under the incongruent decision condition, the resistance to cognitive bias requires the same level of cognitive effort, regardless of seniority. However, with advancing seniority, in the group of professionals, it has been demonstrated that a dependent decision-making style is associated with lower resistance to cognitive bias, especially in conditions that require simpler decisions. Whether this result depends on age or work experience needs to be disentangled from future studies.

A Novel Position-Sensitive Linear Winding Silicon Drift Detector.

A novel position-sensitive linear winding silicon drift detector (LWSDD) was designed and simulated. On the frontside (anode side), the collecting anodes were set on both sides of the detector, and an S-shaped linear winding cathode strip was arranged in the middle, which can realize independent voltage division and reduce the complexity of external bias resistor chain compared with the traditional linear silicon drift detector. The detectors were arranged in a butterfly shape, which increased the effective area of the detectors and improved the collection efficiency. The linear winding silicon drift detector can obtain one-dimensional position information by measuring the drift time of electrons. The 2D position information of the incident particle is obtained from the anodes coordinates of the readout signal. One-dimensional analytically exact solutions of electric potential and field were obtained for the first time for the linear winding silicon drift detector. The simulation results show that the electric potential distribution inside the detector is uniform, and the "drift channel" inside the detector points to the collecting anodes on both sides, which proves the reasonable and feasible design of the linear winding silicon drift detector.

Current dependence of the low bias resistance of small capacitance Josephson junctions

The dc current-voltage characteristics of small Josephson junctions reveal features that are not observed in larger junctions, in particular, a switch to the finite voltage state at current values much less than the expected critical current of the junction and a finite resistance in the nominally superconducting regime. Both phenomena are due to the increased sensitivity to noise associated with the small capacitance of the Josephson junction and have been extensively studied a few decades ago. Here I focus on the current bias dependence of the differential resistance of the junction at low current bias in the nominally superconducting regime, using a quantum Langevin equation approach that enables a physically transparent incorporation of the noise environment of the junction. A similar approach might be useful in modeling the sensitivity of superconducting qubits to noise in the microwave regime.

Fabrication Process for Monolithic Integration of a Nitride Superconductor-Based Superconducting Qubit with a Single Flux Quantum Control Circuit

We developed a process for fabricating nitride superconductor-based superconducting qubits monolithically integrated with a single flux quantum (SFQ)-based readout and control circuits. Since we used a Josephson junction (JJ) made of an NbN/AlN/NbN tri-layer, including a critical current density ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">J</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> ) of 50 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> as the suitable material for superconducting qubits and SFQ readout/control circuits operating at 20 mK, the JJs for both the qubits and the SFQ circuits could simultaneously be fabricated. The device structure was also composed of three superconductive layers, comprising two superconductive layers as wiring layers and other layers as the top ground plane. Then, we used a Pd film as the resistive layer, which is required as the shunt resistors and the bias resistors for the SFQ control circuits, followed by an investigation of the properties of NbN/AlN/NbN epitaxial junctions and evaluation of the sheet inductance of the base NbN and wiring NbTiN layer. Our results showed the successful fabrication of a JJ with a sufficiently low leakage current and a <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">J</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> of around 50 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , which was close to the target value. Furthermore, the evaluated sheet inductance exceeded 1 pH, which was several times larger than the values obtained for Nb-integrated circuits.

A 200 MHz Passive Rectifier With Active-Static Hybrid VTH Compensation Obtaining 8% PCE Improvement

This work presents a passive rectifier system operating at 200MHz for implantable medical devices. In the CMOS passive rectifier, the gates of NMOS and PMOS are biased separately by using RC networks. In the rectifier, the bias resistor is divided into several pieces and implemented over individual deep N-well (DNW). In this way, the AC losses on the resistors can be reduced. To further improve the power conversion efficiency (PCE) of the rectifier, the static V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> compensation is applied on PMOS switches based on active V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> compensation on NMOS switches. Since the current spikes brought by the digital circuit will have a great influence on the stability of the rectifier system, a power supply isolation scheme consisting of several RC networks is proposed. The rectifier system is implemented in a 65nm general-purpose. Measurement results show that the proposed active-static hybrid V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> compensation scheme achieves a PCE improvement in a wide input power range with a maximum of 8% PCE improvement compared to the active V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> compensation scheme only.

Hierarchically porous TiO2 supported anisotropic plasmonic Cu2-xS photocatalyst for accelerated hydrogen evolution and CO2 reduction to MeOH

In this report, a facile precipitate (water/ethylene glycol) strategy has been employed for constructing a robust heterostructured photocatalyst, Cu2-xS/HPT (CHPT). The synergistic HPT stabilized on plasmonic Cu2-xS (0 < x < 1) acts as a bifunctional catalyst, enabling efficient separation of photoexcited charges in accelerated hydrogen evolution and selective conversion of CO2 to MeOH and resulting in a superior hydrogen efficiency of 4.43 mmol g−1h−1 (AQY 6.16%) and CO2 reduction to MeOH (2.2 mmol g−1 h−1). The integrated Cu2-xS/HPT decreases the band potential to 2.30 eV and exhibits an impressive photocurrent response (132 μA cm−2) without onset bias and significant corrosion resistance with low Tafel slope of 155 mV.dec−1. The findings of the photoluminescence and TCSPC experiments reveal that charge-carrier transfer is both efficient and effective, with less charge recombination occurring throughout the reduction phase. Photochemical reduction is facilitated by exposed active sites at HPT wormhole fibrous pore vertices and edges, in addition to an optimum Cu1.8S loading. The experimental and DFT studies complement each other for superior catalytic performance.

Signal-to-Noise Ratio Analysis for the Voltage-Mode Read-Out of Quartz Tuning Forks in QEPAS Applications

Quartz tuning forks (QTFs) are employed as sensitive elements for gas sensing applications implementing quartz-enhanced photoacoustic spectroscopy. Therefore, proper design of the QTF read-out electronics is required to optimize the signal-to-noise ratio (SNR), and in turn, the minimum detection limit of the gas concentration. In this work, we present a theoretical study of the SNR trend in a voltage-mode read-out of QTFs, mainly focusing on the effects of (i) the noise contributions of both the QTF-equivalent resistor and the input bias resistor RL of the preamplifier, (ii) the operating frequency, and (iii) the bandwidth (BW) of the lock-in amplifier low-pass filter. A MATLAB model for the main noise contributions was retrieved and then validated by means of SPICE simulations. When the bandwidth of the lock-in filter is sufficiently narrow (BW = 0.5 Hz), the SNR values do not strongly depend on both the operating frequency and RL values. On the other hand, when a wider low-pass filter bandwidth is employed (BW = 5 Hz), a sharp SNR peak close to the QTF parallel-resonant frequency is found for large values of RL (RL > 2 MΩ), whereas for small values of RL (RL < 2 MΩ), the SNR exhibits a peak around the QTF series-resonant frequency.

Parallel metal–insulator–metal diode with an ultrathin spin-coated hydrogen silsesquioxane insulating layer

In this study, we investigated a parallel metal–insulator–metal (MIM) diode with an ultrathin spin-coated hydron silsesquioxane (HSQ) layer. Ti and Au were adopted as the metal electrodes for the large work function difference. Conditions to obtain the ultrathin HSQ layer with a thickness of below 5 nm for tunneling were predicted and Ti/HSQ/Au diode devices with a parallel electrode arrangement were fabricated by using the conditions. The typical current–voltage characteristics of the fabricated diodes exhibited asymmetry of about 1.8 at 3.0 V. It was demonstrated that the dynamic zero bias resistance of the diodes was as low as about 8 MΩ. Based on the Simmons model, the estimated oxide-equivalent thickness of HSQ in the device was about 1.7 nm, which was in good agreement with the prediction. The good figures of merit of the fabricated diodes imply that the spin-coated ultrathin HSQ is very suitable for this application.

Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation

The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb−1 means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6⋅1015MeVneq/cm2 and 0.66MGy, respectively, including a safety factor of 1.5. Radiation hard n+-in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n+ implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics.Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. We discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips.

Thickness Study of Ga2O3 Barrier Layer in p-Si/n-MgZnO:Er/Ga2O3/ZnO:In Diode

The p-Si/n-MgZnO:Er/Ga2O3/ZnO:In diodes with different Ga2O3 thicknesses were fabricated through spray pyrolysis deposition at 450 °C with aqueous solutions containing magnesium nitrate, zinc acetate, erbium acetate, gallium nitrate, and indium nitrate precursors. The effects of Ga2O3 layer thickness on the diode properties were investigated. For the deposited films, a combined tiny hexagonal slices and small blocks surface morphology was characterized by scanning electron microscopy for all samples. Diodes were formed after In and Ag deposition on the back side and top side, respectively. The current-voltage characteristics and luminescence spectra are studied. With the increasing of Ga2O3 thickness, the diode forward bias resistance increases while the reverse biased dark current shows the decrease-increase characters. The Er ion corresponded green light emission was characterized for the diode under reverse biased breakdown condition. The increased luminescent intensity with low turn-on current behaviors was characterized by the diode with a Ga2O3 thickness of 4.9 nm. With the diode electrical and luminescence analysis, the effect of the Ga2O3 barrier layer on the diode was discussed. The Ga2O3 barrier layer improves performance for rare earth-related light-emitting devices.

Modulating Exchange Bias, Anisotropic Magnetoresistance, and Planar Hall Resistance of Flexible Co/MnN Epitaxial Bilayers on Mica by Bending Strain.

The integration of ferromagnetic/antiferromagnetic bilayers with exchange bias effect on flexible substrates is crucial for flexible spintronics. Here, the epitaxial Co/MnN bilayers are deposited on mica by facing-target sputtering. A large in-plane exchange bias field (HEB) of 1800 Oe with a coercive field (HC) of 2750 Oe appears in the Co (3.8 nm)/MnN (15.0 nm) bilayer at 5 K after field cooling from 300 to 5 K. Effective interfacial exchange energy Jeff of the Co/MnN bilayer is 0.83 erg/cm2. The strain-induced maximum increase of HEB and HC reaches 18% and 21%, respectively, in the Co(3.8 nm)/MnN(15.0 nm) bilayer. Strain-modulated HEB is attributed to the change of interfacial exchange coupling between Co and MnN layers. HEB is inversely proportional to Co thickness but independent of MnN thickness. The change of HEB is less than 5% after 100 bending cycles, indicating mechanical durability. The out-of-plane exchange bias also appears since Co spins are not fully reversed due to the strong pinning effect. Anisotropic magnetoresistance (AMR) and planar Hall resistance (Rxy) show obvious hysteresis due to HEB. Exchange bias-induced phase difference of AMR and Rxy almost remains unchanged at different bending strains. The results provide the basis for understanding the bending strain tailored exchange bias.

Pre-production results from ATLAS ITk Strip Sensors Quality Assurance Testchip

The production of strip sensors within the framework of the ATLAS Inner Tracker (ITk) development is a process which requires continuous evaluation during the full production period (about 4 years). Such an evaluation is divided into two different parts: Quality Control (QC), which focuses on the final product (the actual sensors) and tries to identify possible defects once the fabrication is completed, and Quality Assurance (QA), which aims to prevent deviations in the manufacturing process and uses specifically-designed test structures. The initial sensor pre-production consists of 5% (1041 sensors) of the total number of sensors expected during production. As part of pre-production, the collaboration has measured key parameters from miniature strip sensors (minis), monitor diodes (MD8), and the ATLAS Testchip, before and after irradiation. In this contribution we focus on the analysis of the results of the MD8 and the Testchip. All parameters have been obtained from the test structures (MD8, bias resistors, interdigitated structures, field oxide capacitors, coupling capacitors, punch-through protection structures and cross-bridge resistors) measured at the different test sites (KEK/Tsukuba, Birmingham, Toronto, Ljubljana, Valencia, Carleton, Prague, CNM-Barcelona). The results are compared to predefined pre- and post-irradiation specifications for each tested parameter.

An analytical model for electronic noise in a cryogenic bolometer detector readout circuit

This paper presents an analytical model to quantify the measured noise in a cryogenic bolometer readout circuit. The model includes the contributions from the bias resistors and sensor resistors, voltage and current noise of amplifier, and cable capacitance. The model parameters are empirically estimated using frequency domain analysis of the measured noise data of indigenously developed Neutron Transmutation Doped (NTD) Ge sensors. The model is shown to describe noise data for NTD Ge sensorsover a wide range of resistances corresponding to temperatures in the range 20–70 mK.Relative contributions of different components are discussed and it is shown that the contribution to the overall noise from the differential amplifier at 300 K is the dominant source. It is observed that the amplifier flicker noise is significantly lower than that specified in the amplifier datasheet. The present study also indicates that a desirable value of resistance of NTD sensor (R NTD) from noise considerations is ≲ 1 GΩ at ∼ 20 mK.

Current-voltage characteristics of nano whisker ZnO/Si heterojunction under UV exposition

In/ZnO/p-Si heterojunction diode was produced to investigate the photo-responsivity and electrical features under ultraviolet (UV) light. A hydrothermal synthesis technique was used to coat the ZnO layer on the p-Si single crystal as nanowhisker/rods. The formation of surface and nanowhisker properties of the ZnO layer were investigated by scanning electron microscope (SEM). The I-V (current-voltage) analysis of the In/ZnO/p-Si diode was realized in dark and under UV (290–400 nm) illumination. Further, the main electrical parameters of the diode; such as reverse bias saturation current (I-V), ideality factor (n), zero bias barrier height (ФBo), resistance (R) and interface state density (Nss) were obtained from the experimental I-V measurements by thermionic emission (TE) and Card and Rhoderick's function. Also, the power law of the photocurrents (IPC), photo-responsivity (PR) and response time were extracted. Photo-responsivity and response time values of In/ZnO/p-Si heterojunction diode were obtained as 2.0 A/W and (rise/decay) 160/200 ms, respectively.

Anodizing parameters optimization of Ti–6Al–4V titanium alloy using response surface methodology

The present paper depicts application of response surface methodology (RSM) for optimizing the anodizing parameters of Ti–6Al–4V (TA6V) titanium alloy. Three operating parameters, i.e., voltage (V), temperature (T) and time (t), are designed as factors by using RSM design. Reliable regression models were established between the input parameters and the given responses, namely oxide thickness (e), Vickers hardness (Hv) and polarization resistance (Rp) with regression coefficients multiples of 0.940, 0.925, 0.865, respectively, indicating good agreement between the experimental values and those predicted using the quadratic model.The predicted values of V (42.67 V), t (45.9 min) and T (29.5 °C) are the optimal anodization combination leading to a TiO2 layer with the best compromise between the oxide thickness (28.7 μm), Vickers hardness (321.90) and bias resistance (6.37 MΩ cm2). It was observed that the hardness characteristic is more affected by anodizing time and temperature, and less sensitive to voltage and parameter interactions. Polarization resistance is strongly influenced by voltage, modestly influenced by anodizing time and temperature, and less sensitive to parameter interactions. Moreover, higher anodizing parameters lead to higher thickness. Therefore, RMS could be a suitable method to optimize anodizing parameters of titanium alloys.

NPN Sziklai pair small-signal amplifier for high gain low noise submicron voltage recorder

Small signal-to-noise ratio (SNR) and multiple noise sources, coupled with very weak signal amplitudes of bio signals make brain-computer interface (BCI) application studies a challenging task. The front-end recorder amplifiers receive very-weak signal (few μV) from high impedance electrodes and for efficient processing of such weak and low frequency (&lt;1 kHz) signals a high gain amplifier with very low operating voltage and low total harmonic distortion (THD) is required. Existing amplifiers suffer from problem of high non-linearity and low common mode rejection. A good sense amplifier at predeceasing stage can solve this problem. Utilizing very high amplification factor of Sziklai Pair, this paper proposes two circuit topologies of common-emitter and common-collector negative-positive-negative (NPN) Sziklai Pair small signal amplifiers suitable for use in preamplifier stages of such signal acquisition circuit. Present study provides broad-spectrum of analysis of these amplifiers covering effect of additional biasing resistance RA, variation of ‘ideal forward maximum beta’ β, temperature dependency, noise sensitivity and phase variation. The tunable capability of first topology makes it a suitable candidate in wide variety of other applications. The first amplifier operates on very low input voltage range (0.1μV-6mV) whereas the second amplifier works on 100 μV-11 mV range of input voltage.

Debiased Scene Graph Generation for Dual Imbalance Learning.

Scene graph generation (SGG) is one of the hottest topics in computer vision and has attracted many interests since it provides rich semantic information between objects. In practice, the SGG datasets are often dual imbalanced, presented as a large number of backgrounds and rarely few foregrounds, and highly skewed foreground relationships categories (i.e., the long-tailed distribution). How to tackle this dual imbalanced problem is crucial but rarely studied in literature. Existing methods only consider the long-tailed distribution of foregrounds classes and ignore the background-foreground imbalance in SGG, which results in a biased model and prevents it from being applied in the downstream tasks widely. To reduce its side effect and make the contributions of different categories equally, we propose a novel debiased SGG method (named DSDI) by incorporating biased resistance loss and causal intervention tree. We first deeply analyze the potential causes of dual imbalanced problem in SGG. Then, to learn more discriminate representation of the foreground by expanding the foreground features space, the biased resistance loss decouples the background classification from foreground relationship recognition. Meanwhile, a causal graph of content and context is designed to remove the context bias and learn unbiased relationship features via casual intervention tree. Extensive experimental results on two extremely imbalanced datasets: VG150 and VrR-VG, demonstrate our DSDI outperforms other state-of-the-art methods. All our models will be available in https://github.com/zhouhao0515/unbiasedSGG-DSDI.

Correction of traditional incorrect oscillation formula for the Wien‐Bridge Oscillator

An incorrect mistake that the DC bias resistance cannot change the oscillation frequency exists for the traditional formula of the Wien-Bridge oscillator. From the rigorous hardware experiments and theoretical proofs in this study, the proposed new formula exploits the fact that the oscillation frequency of the Wien-Bridge oscillator is indeed determined by the DC bias resistance. The feedback theory and Barkhausen criterion are often utilised to address the oscillating formula of the Wien-Bridge oscillator for traditional approaches. However, the steps of the feedback theory are complicated, and its severe shortcoming is the utilisation of Kirchhoff's law. The traditional Barkhausen formula is only necessary but not sufficient for the Wien-Bridge oscillator. Hence, the oscillator with a feedback device, which fulfils the Barkhausen criterion does not necessarily oscillate at a frequency and then this fact will make the Barkhausen criterion impractical. This study applies our series research Chen's Electric Unifying Approach to overcome the serious shortcomings of the traditional Barkhausen method and yields a necessary and sufficient oscillation formula for the Wien-Bridge oscillator. Another important feature of our proposed method is that the oscillation condition is effective for a range value, and it can solve the impact caused by the change in environmental factors.