Bias Field Research Articles

Field-free switching of VG-SOT-pMTJ device through the interplay of SOT, exchange bias, and VCMA effects

Field-free magnetization switching via the interplay of spin orbit torque (SOT), exchange bias field (HEX), and voltage controlled magnetic anisotropy (VCMA) is crucial for the development of scalable, high speed, and energy-efficient spintronic memories. This has been experimentally demonstrated by the rapid evolution of the voltage gated-spin orbit torque-magnetic random access memory (VG-SOT-MRAM) cell, in which perpendicular spin current is fed along with the in-plane HEX and VCMA assistance for cell programming. Here, we have examined the writing properties of a three terminal voltage gated-spin orbit torque-perpendicularly magnetized magnetic tunnel junction (VG-SOT-pMTJ) device structure (IrMn/CoFeB/MgO/CoFeB) in-depth through simulation. We observed that SOT critical switching current (I_SOT) decreases either by increasing the VCMA voltage or FL thickness. Even SOT field-like torque can accelerate the switching process and modulate the critical switching current. As the VCMA voltage rises, I_SOT falls by nearly 60%. In our experimental setup, VCMA/SOT optimal pulse width and amplitude for better write delay are 1 ns and 0.3 V, respectively. Furthermore, the impacts of free layer thickness, pMTJ radius, HEX, and noise are analyzed. Finally, we demonstrate the dependency of material parameters on temperature and VCMA voltage.

Learning from pseudo-labels: deep networks improve consistency in longitudinal brain volume estimation.

Brain atrophy is a critical biomarker of disease progression and treatment response in neurodegenerative diseases such as multiple sclerosis (MS). Confounding factors such as inconsistent imaging acquisitions hamper the accurate measurement of brain atrophy in the clinic. This study aims to develop and validate a robust deep learning model to overcome these challenges; and to evaluate its impact on the measurement of disease progression. Voxel-wise pseudo-atrophy labels were generated using SIENA, a widely adopted tool for the measurement of brain atrophy in MS. Deformation maps were produced for 195 pairs of longitudinal 3D T1 scans from patients with MS. A 3D U-Net, namely DeepBVC, was specifically developed overcome common variances in resolution, signal-to-noise ratio and contrast ratio between baseline and follow up scans. The performance of DeepBVC was compared against SIENA using McLaren test-retest dataset and 233 in-house MS subjects with MRI from multiple time points. Clinical evaluation included disability assessment with the Expanded Disability Status Scale (EDSS) and traditional imaging metrics such as lesion burden. For 3 subjects in test-retest experiments, the median percent brain volume change (PBVC) for DeepBVC and SIENA was 0.105 vs. 0.198% (subject 1), 0.061 vs. 0.084% (subject 2), 0.104 vs. 0.408% (subject 3). For testing consistency across multiple time points in individual MS subjects, the mean (± standard deviation) PBVC difference of DeepBVC and SIENA were 0.028% (± 0.145%) and 0.031% (±0.154%), respectively. The linear correlation with baseline T2 lesion volume were r = -0.288 (p < 0.05) and r = -0.249 (p < 0.05) for DeepBVC and SIENA, respectively. There was no significant correlation of disability progression with PBVC as estimated by either method (p = 0.86, p = 0.84). DeepBVC is a deep learning powered brain volume change estimation method for assessing brain atrophy used T1-weighted images. Compared to SIENA, DeepBVC demonstrates superior performance in reproducibility and in the context of common clinical scan variances such as imaging contrast, voxel resolution, random bias field, and signal-to-noise ratio. Enhanced measurement robustness, automation, and processing speed of DeepBVC indicate its potential for utilisation in both research and clinical environments for monitoring disease progression and, potentially, evaluating treatment effectiveness.

Energy harvesting using ferroelectric/ferroelastic switching: the effect of pre-poling

Improved power output and energy density have been achieved in piezoelectric transducers by exploiting ferroelectric/ferroelastic switching. However, a problem is that stable working cycles with polarization switching normally cannot be driven by stress alone. This problem has been addressed by using internal bias fields in a partially poled ferroelectric: the material state is engineered such that compressive stress drives ferroelastic switching during mechanical loading, while residual fields restore the polarized state during unloading. However, although this method has been verified, the devices in engineering material states with the best performance have not been explored systematically. In this work, internal bias fields in a partially poled (pre-poled) ferroelectric are used to guide polarization switching, producing an effective energy harvesting cycle. Devices are tested and optimized in the frequency range 1–20 Hz, and the influence of the degree of pre-poling in the fabrication process on energy harvesting performance is explored systematically. It is found that pre-poling the ferroelectric ceramic to about 25% of the fully poled state results in a device that can generate a power density up to about 26 mW cm−3 of active material at 20 Hz, an improvement on prior work and an order of magnitude advance over conventional piezoelectrics. However, maximizing the power density can result in residual stresses that risk damage to the device during preparation or in service. The relationship between fabrication success rate and pre-poling level is studied, indicating that greater degrees of pre-poling correlate with higher survival rate. This provides a basis for balancing energy conversion with device robustness.

Error correction for IMERG precipitation estimates based on climatological adjustment combining the dry–wet season division and weight allocation

Error correction to obtain more accurate gridded precipitation estimates enhances the application prospects of the integrated multi-satellite retrievals for global precipitation measurement (IMERG). This study developed a climatological adjustment approach combining dry–wet season division and weight allocation (i.e., the DW approach) to achieve IMERG estimate correction without the need for contemporaneous gauge data. By learning the characteristics of an 18-year bias series from June 1, 2000 to December 31, 2017, through empirical probability calculation (the probability distribution function of every bias value in the dry and wet seasons), the bias field can be obtained without mathematical distribution assumptions for the biases. After recognizing the bias field at each of the 687 gauges in mainland China, the error adjustment can be tailored for every gauge to lower the current bias magnitude. The bias adjustment can be obtained as the product of two components, namely, the adjustment amount (AA) and the scaling factor (SF). The SF was discussed under different value intervals of the IMERG estimates to decide whether the original IMERG estimates should subtract or add the AA to generate the adjusted IMERG estimates. The quantile mapping (QM) approach was designed to be the standard method to examine the DW approach proposed. During the validation period from January 1, 2018, to December 31, 2019, the capability of two error adjustment approaches to the value reduction of evaluation indicators was inspected at gauge, climatic, and topographic region scales. The main conclusions follow: (1) The DW approach performed better than the QM approach regarding the results of all of the evaluation indicators at the gauge scale. (2) The DW approach maintained higher efficacy than the QM approach at the gauge, climatic, and topographic region scales. (3) The proportion of the DW approach as the better-performing adjustment approach was higher than the QM approach both at the gauge scale and in most subregions. (4) In the areas where the IMERG products greatly overestimate the precipitation, the DW approach will be very effective, whereas the QM approach will be very effective in the areas where the precipitation is significantly underestimated by the IMERG data.

Deterministic Magnetization Reversal in Synthetic Antiferromagnets using Natural Light.

Traditional current-driven spintronics is limited by localized heating issues and large energy consumption, restricting their data storage density and operation speed. Meanwhile, voltage-driven spintronics with much lower energy dissipation also suffers from charge-induced interfacial corrosion. Thereby finding a novel way of tuning ferromagnetism is crucial for spintronics with energy-saving and good reliability. Here, a visible light tuning of interfacial exchange interaction via photoelectron doping into synthetic antiferromagnetic heterostructure of CoFeB/Cu/CoFeB/PN Si substrate is demonstrated. Then, a complete, reversible magnetism switching between antiferromagnetic (AFM) and ferromagnetic (FM) states with visible light on and off is realized. Moreover, a visible light control of 180° deterministic magnetization switching with a tiny magnetic bias field is achieved. The magnetic optical Kerr effect results further reveal the magnetic domain switching pathway between AFM and FM domains. The first-principle calculations conclude that the photoelectrons fill in the unoccupied band and raise the Fermi energy, which increases the exchange interaction. Lastly, a prototype device with visible light control of two states switching with a 0.35% giant magnetoresistance ratio change (maximal 0.4%), paving the way toward fast, compact, and energy-efficient solar-driven memories is fabricated.

Effect of Partial Replacement of Mn with Cr on Exchange Bias Behavior and Negative Magnetization in Nanocrystalline Ho2CoMnO6 Double Perovskite

In the present work, we have reported a detailed study on the structural and magnetic properties of Ho2CoMn1-xCrxO6 (x = 0–0.5) double perovskite. Rietveld analysis of observed x-ray diffraction patterns revealed that the examined samples are crystallized in the P21/n space group with a monoclinic structure. With Cr substitution, the lattice parameters got reduced. The particle size is also observed to be decreased. Magnetic analysis reveals a single ferromagnetic (FM) transition (TC1) at 83 K for x ≤ 0.2. It is attributed to the superexchange interaction in Co2+ - O2− - Mn4+ networks. Whereas, for x ≥ 0.3, we observed two transitions namely TC1 and TC2. Here TC2 is attributed to the result of antiferromagnetic (AFM) interactions in Cr3+- O2− - Cr3+ and/or Cr3+- O2− - Mn4+ networks. TC2 decreases from 77 K for x = 0.3 to 63 K for x = 0.5 sample, whereas no appreciable variation in TC1 is observed. In addition, the intermediate compounds such as x = 0.2 and 0.4 show another transition at 120 K and is attributed to the charge ordering temperature (TCO). Magnetization reversal (MR) has been observed in x = 0.5 at a lower applied field with a compensation temperature of 7 K. The competition between the paramagnetic (PM) moment of Ho3+/Mn3+ ions under the influence of the negative internal field caused by AFM ordered ions and the FM components of Co2+ and Mn4+ ions is attributed to this MR. At 4 K, a bipolar switching of magnetization is demonstrated for x = 0.5. After Cr substitution, the hysteresis (M−H) loops show a decrease in saturation magnetization (MS) and coercivity (Hc). Exchange bias field of − 114 Oe and + 208 Oe are observed for x = 0.0 and 0.5 samples respectively. They are attributed to the competition between canted magnetic moments of RE ions and FM moments of TM ions, where, the former one is dominating for x = 0.5 and vice versa for x = 0.0 samples.

Giant exchange bias in the nanostructured MnAl thin ribbons

In this study, Mn54Al46 thin ribbons composed of nanostructured ferromagnetic and antiferromagnetic phases were fabricated by a melt spinning method, and a tunable exchange bias field was obtained by precisely controlling the wheel speed and the cooling field. The x-ray diffraction result confirms the existence of the nanostructured Mn-poor ε phase. The pinned ferromagnetic Mn-poor ε phase coupled with the antiferromagnetic Mn-rich ε phase accounts for the exchange bias observed in the sample fabricated at a wheel speed of 65 m/s in which almost no τ phase is formed. Furthermore, the exchange bias field first increases and reaches the most significant reported value of 41 kOe in this system and then decreases with the increase in the cooling field, exhibiting an inversely proportional relationship with the magnetization. The decrease in the exchange bias field is believed to be related to the increased coupling thickness of the ferromagnetic phases with the increase in the cooling field.

Modeling and Simulation of Fe-Doped GaN PCSS in High-Power Microwave

In this article, the characteristics of linear GaN photoconductive semiconductor switch (PCSS) in high-power microwaves are investigated by Silvaco TCAD (Technology Computer-Aided Design). By comparison of optical absorption efficiency among three types of PCSS structures, the optimized Fe-doped GaN PCSS is designed in a side-illuminated, vertical structure with a spot size of 1 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times$</tex-math> </inline-formula> 8 mm. The photocurrent of side-illuminated GaN vertical PCSS (vPCSS) begins to saturate at 1.65 mJ with the increase of applied optical energy. The average saturated switch resistance and electron concentration of vPCSS under a bias voltage of 5–20 kV are almost 8.2 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\pmb\Omega $</tex-math> </inline-formula> and 3.5 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times$</tex-math> </inline-formula> 10 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{\text{14}}$</tex-math> </inline-formula> cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{-\text{3}}$</tex-math> </inline-formula> , respectively. As the device is in a saturated photocurrent state, the peak photocurrent is a linear function of bias voltage. As the device is in an unsaturated photocurrent state, improving the light energy is more effective than the withstand voltage of the device to increase photocurrent. Due to the short carrier lifetime, the GaN vPCSS has the response capacity to a 50-ps pulsewidth laser. Based on side-illuminated GaN vPCSS at the bias field 200 kV/cm, a narrowband microwave with adjustable frequency (3.3–5 GHz) could be generated. The maximum output power reaches up to 1.3 kW. Effects of anti-reflective (AR) and reflective coatings on optical absorption are investigated. The photocurrent of vPCSS with both AR and reflective coatings increases by 77.2% as compared with normal vPCSS.

Exchange Bias and Vertical Magnetic Shift on Co−CoO Thin Films

AbstractThis work reports the results of an experimental study on Si(001)/Au(111)/Co/CoO/ZrO2 elaborated by electron beam evaporation. The chemical composition of the oxidized state of cobalt and zirconium cover layers derived from metallic deposition is confirmed by X‐ray photoelectron spectroscopy (XPS). Magnetic properties are probed by magneto‐optical Kerr effect (MOKE). The polar magneto‐optic Kerr effect (PMOKE) measurements reveal that the cooling at 77 K under an applied magnetic field induces an exchange coupling which is manifested by a positive exchange bias (EB) field accompanied by a negative vertical shift of the magnetization. In longitudinal magneto‐optical Kerr effect (LMOKE), the exchange coupling depends on the orientation of the applied measuring magnetic field. It is found that both the exchange field shift rate hshift and the vertical shift rate in magnetization mshift exhibit a peak at 45° between the applied field and the [100] in‐plane direction which may be associated with the presence of uncompensated pinned spins at the Co−CoO interface.

Robust Training of Neural Networks against Bias Field Perturbations

We introduce the problem of training neural networks such that they are robust against a class of smooth intensity perturbations modelled by bias fields. We first develop an approach towards this goal based on a state-of-the-art robust training method utilising Interval Bound Propagation (IBP). We analyse the resulting algorithm and observe that IBP often produces very loose bounds for bias field perturbations, which may be detrimental to training. We then propose an alternative approach based on Symbolic Interval Propagation (SIP), which usually results in significantly tighter bounds than IBP. We present ROBNET, a tool implementing these approaches for bias field robust training. In experiments networks trained with the SIP-based approach achieved up to 31% higher certified robustness while also maintaining a better accuracy than networks trained with the IBP approach.

Bias-free very low frequency magnetoelectric antenna

A rapid surge in the research on very low frequency (VLF) antennas is occurring due to the demand for radio navigation and special environment communications such as underwater and underground applications. Among them, magnetoelectric (ME) antennas have recently proven to be a prospective solution for miniaturization of VLF communication systems. However, the essential magnetic bias fields (Hdc) lead to challenges of miniaturization, electromagnetic interference, and noise sources for ME antenna application. Here, a bias-free VLF ME antenna based on the magneto-gradient ME composite (i.e., annealed Metglas/Metglas/PZT/Metglas/annealed Metglas) has been designed. Owing to the interaction effect between multi-unannealed/annealed Metglas, the magneto-gradient ME composite exhibits a large direct and converse ME response (αDME = 107 V/cm Oe and αCME = 9 Gs/V at resonance) at bias-free, which is about 63% and 33% of the maximum value under optimal magnetic bias for unannealed ME composites. Moreover, a digital amplitude shift keying (ASK) modulation method is proved suitable for the as-made bias-free VLF ME antenna. Such a bias-free ME antenna provides a practicable strategy for miniaturization of VLF communication.

Low-Frequency Resonant Magnetoelectric Effects in Layered Heterostructures Antiferromagnet-Piezoelectric

Magnetic field sensors using magnetoelectric (ME) effects in planar ferromagnetic-piezoelectric heterostructures convert a magnetic field into an output voltage. The parameters of ME sensors are determined by characteristics of the magnetic constituent. In this work, the low-frequency ME effects in heterostructures comprising a layer of antiferromagnetic hematite α-Fe2O3 crystal with easy-plane anisotropy and a piezoelectric layer are studied. The effects arise due to a combination of magnetostriction and piezoelectricity because of mechanical coupling of the layers. The field dependences of magnetization and magnetostriction of the hematite crystal are measured. The resonant ME effects in the hematite-piezopolymer and hematite-piezoceramic structures are studied. The strong coupling between magnetic and acoustic subsystems of hematite results in a tuning of the acoustic resonance frequency by the magnetic field. For the hematite layer, the frequency tuning was found to be ~37% with an increase in the bias field up to 600 Oe. For the hematite-PVDF heterostructure, the frequency tuning reached ~24% and the ME coefficient was 58 mV/(Oe∙cm). For the hematite-piezoceramic heterostructure, the frequency tuning was ~4.4% and the ME coefficient 4.8 V/(Oe∙cm). Efficient generation of the second voltage harmonic in the hematite-piezoceramic heterostructure was observed.

Dynamic magnetic behaviors and magnetocaloric effect of the Kagome lattice: Monte Carlo simulations

Based on the Monte Carlo method, we examined the dynamic magnetic behaviors and magnetocaloric effect of a Kagome lattice subjected to the influence of time-dependent oscillating and time-independent magnetic fields. We used the Ising model to describe the Kagome lattice and study the dynamic order parameters, blocking temperature, internal energy, and phase diagrams. The results revealed that exchange coupling increases the stability of the system and the bias field induces order; however, the time-dependent oscillating magnetic field induces disorder. In addition, the magnetocaloric properties, changes in magnetic entropy, and relative cooling power of the Kagome lattice were investigated.

Time-orbiting-potential chip trap for cold atoms

We present a design for an atom chip trap that uses the time-orbiting potential technique. The design offers several advantages compared to other chip-trap methods. It uses a simple crossed-wire pattern on the chip, along with a rotating bias field. The trap is naturally close to spherically symmetric, and it can be modified to be exactly symmetric in quadratic order of the coordinates. Loading from a magneto-optical trap is facilitated because the trap can be positioned an arbitrary distance from the chip. The fields can be modified to provide a gradient for support against gravity, and the three-dimensional trap can be adiabatically transformed into a two-dimensional guide.

Electrical Control of Spin Hall Efficiency and Field-Free Magnetization Switching in W/Pt/Co/Pt Heterostructures with Competing Spin Currents.

Reversal of magnetization via current-induced spin-orbit torque (SOT) is one of the core issues in spintronics. However, an in-plane assistant field is usually required for the deterministic switching of a perpendicularly magnetized system. Additionally, the efficiency of SOT is low, which is detrimental to device applications. This study achieved a reversible and non-volatile control of the critical current for magnetization switching and spin Hall efficiency in the TaN/W/Pt/Co/Pt/TaN heterostructures by ionic liquid (IL) gating-induced hydrogen ion adsorption and desorption in the upper Pt layer. Furthermore, the thinning of the Pt and TaN capping layers activated the oxygen ion migration toward the Co layer under IL gating, resulting in an exchange bias field and allowing field-free magnetization switching and Boolean logic operation. The results of this study offer an intriguing opportunity to promote the development of SOT-based spintronic devices from the perspective of iontronics with low energy dissipation.

Generalized framework for the step response of semiconducting materials to optically switched electrical bias input in terahertz emission spectroscopy

In this paper, a generalized framework for the step response of semiconducting materials to optically switched electrical bias input in terahertz emission spectroscopy was developed, introducing a complex response function into the frequency domain. A comprehensive formula was obtained for calculating the transient current from the poles of the response function under bias field. This formula was found to give transient currents of an exponentially saturated, overshooting, or oscillating nature for three different regimes of charge transport in an isolated energy band. Furthermore, it was clarified how the transient terahertz emission is linked to the response function and its retarded contribution. When either true current or polarization current is linear with respect to bias field and dominates the transient current, the retarded contribution is identified as the small-signal ac complex conductivity. Two different spectral examples of the retarded contribution were given for actual terahertz Bloch oscillations in biased semiconductor superlattices, describing the small-signal response of polarization current under the Wannier–Stark localization and the large-signal response of true current under interminiband mixing.

Giant Electrostrain in Lead-Free Textured Piezoceramics by Defect Dipole Design.

By converting electrical signal into mechanical displacement, piezoelectric actuators are widely used in many applications due to their precise displacement, fast response, and small size. The unipolar electrostrain values larger than 1% reported so far are from lead-based single crystals or ceramics, which brings environmental concerns. Herein, a giant unipolar electrostrain of 1.6% with good fatigue resistance and low hysteresis in Sr/Nb-doped Bi0.5 (Na0.82 K0.18 )0.5 TiO3 lead-free textured piezoceramics by defect dipole design is reported, which is comparable to or even higher than state-of-the-art lead-based piezoelectric single crystals. The engineered defect dipoles in ergodic relaxor ferroelectrics can introduce a large internal bias field along the poling direction, where the 〈111〉-oriented defect dipoles with large polarizability aligning along the 〈111〉-oriented spontaneous polarizations of the electric-field-induced ferroelectric phase greatly benefit the reversible phase-transition process of the 〈00l〉-textured ceramic. In-depth microstructural studies reveal that the greatly enhanced electrostrain is realized by the synergistic contributions from the reversible electric-field-induced phase transition, grain orientation engineering, and most importantly, defect dipole engineering. The present research provides a general strategy for the design of piezoceramics with high electrostrain, which is expected to be promising alternative to lead-based piezoelectric actuators.

Micromachined Tunable Magnetostatic Forward Volume Wave Bandstop Filter

We have successfully designed, fabricated, and characterized a planar monolithic yttrium iron garnet (YIG) Chebyshev bandstop filter on gadolinium gallium garnet (GGG) substrate with tunable frequency, low insertion loss (IL), and high rejection. This filter is created in YIG micromachining technology that allows direct placement of metal transducers on YIG for strong spin-wave coupling. With an out-of-plane 3900-Oe bias field, the bandstop filter exhibits 55-dB maximum stopband rejection at a center frequency of 6 GHz, with 2-dB passband IL and 37.8-dBm passband <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$ \mathrm{IIP_3} $</tex-math> </inline-formula> . By applying different bias fields, the stopband center frequency is tuned from 4 to 8 GHz while maintaining more than 30-dB rejection. Incorporated with proper design of tunable compact electromagnet, this new filter design can provide attenuation of spurs appearing across the fifth generation (5G) and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$X$</tex-math> </inline-formula> -band spectrum.

NeSVoR: Implicit Neural Representation for Slice-to-Volume Reconstruction in MRI.

Reconstructing 3D MR volumes from multiple motion-corrupted stacks of 2D slices has shown promise in imaging of moving subjects, e. g., fetal MRI. However, existing slice-to-volume reconstruction methods are time-consuming, especially when a high-resolution volume is desired. Moreover, they are still vulnerable to severe subject motion and when image artifacts are present in acquired slices. In this work, we present NeSVoR, a resolution-agnostic slice-to-volume reconstruction method, which models the underlying volume as a continuous function of spatial coordinates with implicit neural representation. To improve robustness to subject motion and other image artifacts, we adopt a continuous and comprehensive slice acquisition model that takes into account rigid inter-slice motion, point spread function, and bias fields. NeSVoR also estimates pixel-wise and slice-wise variances of image noise and enables removal of outliers during reconstruction and visualization of uncertainty. Extensive experiments are performed on both simulated and in vivo data to evaluate the proposed method. Results show that NeSVoR achieves state-of-the-art reconstruction quality while providing two to ten-fold acceleration in reconstruction times over the state-of-the-art algorithms.

Implementation of Optimized Planar Hall Effect Sensor as Tunable Resistors With DC Bias Control

The emerging requirements of tunable resistors or pseudoresistors for electrical and electronic circuits demand the rigorous attention of engineers in recent times. The frequency-dependent behavior of conventional pseudoresistors operating with gate-controlled metal oxide field effect transistors (FET) creates a subtle challenge to operate in high-frequency applications. Therefore, this letter investigates a tunable resistor with a planar Hall plate to eliminate the frequency-dependent limitations of FETs. The proposed design of a tunable resistor with an optimized Hall effect sensor is able to achieve resistance tuning in the range of 1.8 Ω–247 KΩ. Apart from that, this letter investigates different geometries of planar Hall plate devices and their impact on biasing and magnetic fields that produce a compelling choice for tunable resistors. The proposed scheme exhibits a THD value of 1.4e-8% for a 10-MHz input signal, which is superior to its counterparts based on gate-controlled field effect devices.