Implementation of Optimized Planar Hall Effect Sensor as Tunable Resistors With DC Bias Control

Abstract

The emerging requirements of tunable resistors or pseudoresistors for electrical and electronic circuits demand the rigorous attention of engineers in recent times. The frequency-dependent behavior of conventional pseudoresistors operating with gate-controlled metal oxide field effect transistors (FET) creates a subtle challenge to operate in high-frequency applications. Therefore, this letter investigates a tunable resistor with a planar Hall plate to eliminate the frequency-dependent limitations of FETs. The proposed design of a tunable resistor with an optimized Hall effect sensor is able to achieve resistance tuning in the range of 1.8 Ω–247 KΩ. Apart from that, this letter investigates different geometries of planar Hall plate devices and their impact on biasing and magnetic fields that produce a compelling choice for tunable resistors. The proposed scheme exhibits a THD value of 1.4e-8% for a 10-MHz input signal, which is superior to its counterparts based on gate-controlled field effect devices.