Research on monolithic integrated driver of Micro LED

Abstract

Micro LED (light-emitting diode) is maturely used in the fields of space display, medical detection and visible light communication due to its unique features of miniaturization, low power consumption, fast response speed and high resolution. However, since the driver circuits are usually composed of Si devices, a large number of Micro LED pixels must be transferred from their GaN substrates to bond with Si field-effect transistors (FETs) by mass transfer techniques. Since there are certain technical bottlenecks in the mass transfer technology of Micro LED, relevant scholars at home and abroad have successively put forward the idea of integrating LED and field effect transistor driving circuit on the same substrate, so as to avoid the issues of low yield and poor accuracy. This paper summarizes the research on monolithic integrated active driving of LEDs and Micro LEDs at home and abroad in recent years. These researches include: monolithic integration of high mobility field effect transistors (HEMTs) and LEDs, metal oxide field effect transistors (MOSFET) and LED monolithic integration and thin film field effect transistor (TFT) monolithic integration with Micro LED.