Bi Te -Bi Se alloy which is typical n-type thermoelectric material were grown by traveling heater method (THM) technique. We investigate the effect of the composition of 100-x(Bi Te ) - x(Bi Se ) and doping of n-type dopants such as SbI and CdCl . Maximum figure of merit of Bi Te -Bi Se alloy was observed with CdCl 0.1 wt% (Z: 2.73 × 10 / K) and SbI 0.05 wt% (Z: 2.29 × 10 /K). Deviation along the length of Bi Te -Bi Se ingot grown by THM method is low, which indicates that the ingot is very homogenized. Also we observed the close relationship of between anisotropy ratio and dopant in the 90(Bi Te ) - 10(Bi Se ) alloys. And we confirmed the fact that anisotropy ratio exerts thermoelectric performance in Bi Te based n-type thermoelectric material.