Memristive Behavior Research Articles

Photodual-Responsive Anthracene-Based 2D Covalent Organic Framework for Optoelectronic Synaptic Devices.

To facilitate the development of efficient neuromorphic perception and computation, it is crucial to explore optoelectronic synaptic devices that integrate perceptual and computational capabilities. Various materials such as oxide semiconductors, conjugated organic polymers, transition metal sulfides, perovskite materials, and metal nanoparticles, along with their composites, are utilized in constructing these devices. However, optoelectronic synaptic devices based on 2D covalent organic frameworks (COFs) is rarely reported. In this study, an anthracene-based 2D COF (COF-DaTp) film is prepared using a room-temperature interface-confined strategy and utilized it as the active layer in an optoelectronic synaptic device with an Al/COF-DaTp/ITO configuration. The device demonstrated dual optoelectronic modulation, exhibiting significant optoelectronic resistive switching in response to light pulses, achieving 32 photoconductive states. Moreover, it exhibited history-dependent memristive behavior in voltage scans and electrical pulses, with a comparable diversity of 32 conductive states. The photodual-responsive properties of the COF-DaTp-based synaptic device enable it to simultaneously perform optical sensing and basic image denoising and recognition tasks, significantly enhancing recognition accuracy and reducing the number of training epochs compared to datasets without noise mitigation. This work opens the door for the application of 2D COF-based optoelectronic synaptic devices in visual computational processing.

Assessment of functional performance in self-rectifying passive crossbar arrays utilizing sneak path current

Self-rectifying memristive devices have emerged as promising contenders for low-power in-memory computing, presenting numerous advantages. However, characterizing the functional behavior of passive crossbar arrays incorporating these devices remains challenging due to sophisticated parasitic currents stemming from rich memristive dynamic behavior. Conventional methods using read margin assessments to evaluate functional behavior in passive crossbars are hindered by the voltage divider effect from the pull-up resistor. In this study, we propose a novel performance metric, Δ\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\Delta$$\\end{document}SC, harnessing sneak path currents to assess functional behavior. Through the application of a pair of negative rectification factors, RFn,L\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\ ext {RF}_\ ext {n, L}$$\\end{document} and RFn,H\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\ ext {RF}_\ ext {n, H}$$\\end{document}, we comprehensively delineate dynamic rectification behavior in both positive and negative bias regimes, as well as in low-resistance state and high-resistance state, deviating from conventional metrics such as on/off ratios, nonlinearity, and rectifying factors. Notably, Δ\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\Delta$$\\end{document}SC provides a quantitative evaluation of the interaction between sneak path currents and read margin, demonstrating its efficacy and addressing a pivotal research gap in the field. For instance, employing self-rectifying BiFeO3\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$_3$$\\end{document} memristive cells featuring RFn,L\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\ ext {RF}_\ ext {n, L}$$\\end{document} = 1.22E3 and RFn,H\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\ ext {RF}_\ ext {n, H}$$\\end{document} = 9.27, we showcase the successful functional performance of a passive crossbar array, achieving Δ\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\Delta$$\\end{document}SC < 2.19E−2, while ensuring a read margin > 0.

Unlocking Nanoprecipitation: A Pathway to High Reversibility in Nanofluidic Memristors.

Solid-state nanochannels have emerged as a promising platform for the development of ionic circuit components with analog properties to their traditional electronic counterparts. In the last years, nanofluidic devices with memristive properties have attracted special interest due to their applicability in, for example, the construction of brain-like computing systems. In this work, an asymmetric track-etched nanofluidic channel with memory-enhanced ion transport is reported. The results illustrate that the formation of nanoprecipitates on the channel walls induces memory effects in ion transport, leading to characteristic hysteresis loops in the current-voltage curves, a hallmark of memristive behavior. Notably, these memristive properties are achievable with a straightforward experimental setup that combines an aqueous solvent and a relatively low-soluble inorganic salt. The various conductance states can be rapidly and reversibly tuned over prolonged time scales. Furthermore, under appropriate measurement conditions, the nanofluidic device can alternate between different iontronic regimes and states, encompassing ion current rectification, ON-OFF states, and memristor-like behavior. These findings provide insights into the design and optimization of nanofluidic devices for bioinspired ionic circuit components.

Tunable multistate field-free switching and ratchet effect by spin-orbit torque in canted ferrimagnetic alloy

Spin-orbit torque is not only a useful probe to study manipulation of magnetic textures and magnetic states at the nanoscale but also it carries great potential for next-generation computing applications. Here we report the observation of rich spin-orbit torque switching phenomena such as field-free switching, multistate switching, memristor behavior and ratchet effect in a single shot, co-sputtered, rare earth-transition metal GdxCo100−x. Notably such effects have only been observed in antiferromagnet/ferromagnet bi-layer systems previously. We show that these effects can be traced to a large anistropic canting, that can be engineered into the GdxCo100−x system. Further, we show that the magnitude of these switching phenomena can be tuned by the canting angle and the in-plane external field. The complex spin-orbit torque switching observed in canted GdxCo100−x not only provides a platform for spintronics but also serves as a model system to study the underlying physics of complex magnetic textures and interactions.

Controlling the digital-to-analog switching in HfO2-based memristors via modulating the oxide thickness

The HfO2-based memristors have been acknowledged as a highly potential candidate for nonvolatile memory and neuromorphic computing applications. However, the analog resistive switching behavior of the HfO2-based memristors still needs improvement. In this work, Cu/HfO2/Pd devices with different oxide layer thicknesses were prepared by the magnetron sputtering process. The resistance switching characteristics related to oxide layer thickness were explored, revealing significant differences in the forming, SET, and RESET characteristics depending on oxide thickness. The conduction mechanism of the Cu/HfO2/Pd memristors is mainly attributed to the space charge limited current (SCLC) model. Thinner devices tend to show a more abrupt SET behavior and larger SET voltage, while thicker devices exhibit more gradual SET behavior and a lower SET voltage. In addition, as the thickness of the oxide layer increases, the Cu/HfO2/Pd memristors transition from digital resistive switching to analog resistive switching. The formation and rupture of oxygen vacancy filaments are predominant in thicker device, and the shape of the conduction filaments has been proposed as responsible for the abrupt and gradual changes in resistive switching. This work demonstrates that the thickness of the oxide layer plays an important role in engineering digital logic and neuromorphic behavior in HfO2-based memristors.

Mechanisms of Defect-Mediated Memristive Behavior in MoS2 Monolayer.

The switching dynamics of a Au∥VS2@MoS2 atomristor is explored by first-principles computations of the atomic-configuration energy and electron transport. It is found that external bias can reduce the energy barrier between the two (high- and low-) conduction states, to achieve nonvolatile resistive switching. We find that the force acting on the switching atom is a combination of electrostatic force (while its charge is induced both electrostatically and chemically) and also by electron-wind, whose effect may hinder the writing process at larger bias. The analysis uncovers how the writing and reading processes of the atomristor depend on several factors: (i) atomic structure details of the Au tip; (ii) the space-gap distance between the tip and MoS2 layer; and (iii) tip metal choice. The fundamental understanding of switching events provides useful guidance for memristor design and possible limitations.

Non-Volatile Resistive Switching in Nanoscaled Elemental Tellurium by Vapor Transport Deposition on Gold.

Two-dimensional (2D) materials are promising for resistive switching in neuromorphic and in-memory computing, as their atomic thickness substantially improve the energetic budget of the device and circuits. However, many 2D resistive switching materials struggle with complex growth methods or limited scalability. 2D tellurium exhibits striking characteristics such as simplicity in chemistry, structure, and synthesis making it suitable for various applications. This study reports the first memristor design based on nanoscaled tellurium synthesized by vapor transport deposition (VTD) at a temperature as low as 100°C fully compatible with back-end-of-line processing. The resistive switching behavior of tellurium nanosheets is studied by conductive atomic force microscopy, providing valuable insights into its memristive functionality, supported by microscale device measurements. Selecting gold as the substrate material enhances the memristive behavior of nanoscaled telluriumin terms of reduced values of set voltage and energy consumption. In addition, formation of conductive paths leading to resistive switching behavior on the gold substrate is driven by gold-tellurium interface reconfiguration during the VTD process as revealed by energy electron loss spectroscopy analysis. These findings reveal the potential of nanoscaled tellurium as a versatile and scalable material for neuromorphic computing and underscore the influential role of gold electrodes in enhancing its memristive performance.

GeTe/MoTe2 Van der Waals Heterostructures: Enabling Ultralow Voltage Memristors for Nonvolatile Memory and Neuromorphic Computing Applications.

Advanced electronic semiconducting Van der Waals heterostructures (HSs) are promising candidates for exploring next-generation nanoelectronics owing to their exceptional electronic properties, which present the possibility of extending their functionalities to diverse potential applications. In this study, GeTe/MoTe2 HS are explored for nonvolatile memory and neuromorphic-computing applications. Sputter-deposited Ag/GeTe/MoTe2/Pt HS cross-point devices are fabricated, and they demonstrate memristor behavior at ultralow switching voltages (VSET: 0.15V and VRESET: -0.14V) with very low energy consumption (≈30 nJ), high memory window, long retention time (104 s), and excellent endurance (105 cycles). Resistive switching is achieved by adjusting the interface between the Ag top electrode and the heterojunction switching layer. Cross-sectional transmission electron microscope images and conductive atomic force microscopy analysis confirm the presence of a conducting filament in the heterojunction switching layer. Further, emulating various synaptic functions of a biological synapse reveals that GeTe/MoTe2 HS can be utilized for energy-efficient neuromorphic-computing applications. A multilayer perceptron is implemented using the synaptic weights of the Ag/GeTe/MoTe2/Pt HS device, revealing high pattern accuracy (81.3%). These results indicate that HS devices can be considered a potential solution for high-density memory and artificial intelligence applications.

Neural Functions Enabled by a Polarity-Switchable Nanofluidic Memristor.

Reproducing neural functions with artificial nanofluidic systems has long been an aspirational goal for neuromorphic computing. In this study, neural functions, such as neural activation and synaptic plasticity, are successfully accomplished with a polarity-switchable nanofluidic memristor (PSNM), which is based on the anodized aluminum oxide (AAO) nanochannel array. The PSNM has unipolar memristive behavior at high electrolyte concentrations and bipolar memristive behavior at low electrolyte concentrations, which can emulate neural activation and synaptic plasticity, respectively. The mechanisms for the unipolar and bipolar memristive behaviors are related to the polyelectrolytic Wien (PEW) effect and ion accumulation/depletion effect, respectively. These findings are beneficial to the advancement of neuromorphic computing on nanofluidic platforms.

MODELIZACIÓN COMPUTACIONAL DE REDES MEMRISTORES: INFLUENCIA DELA CONECTIVIDAD Y LAS CONDICIONES AMBIENTALES EN SU RESPUESTAELÉCTRICACO

With the perspective of implementing neuromorphic devices using memristor networks, we present a numerical-computational platform that allows studying their electrical transport properties. It consists of a function that describes the behavior of an individual memristor (which enables the consideration of an experimental case of interest) and a connection diagram between memristors. Using this platform, two-dimensional networks of various sizes are studied,also incorporating environmental effects (such as humidity and temperature). Furthermore, by selecting the electrically accessible ports, the impact of connectivity on the electrical properties of the network is evaluated. The results indicate that, beyond the individual characteristics of the memristors (determined by the particular selected model), the degree of connectivity, the topology of the connections, and the environmental conditions significantly influence the macroscopic electrical response of the networks.

Bioactive Ion-Confined Ultracapacitive Memristors with Neuromorphic Functions.

The field of bioinspired iontronics, bridging electronic devices and ionic systems, has multiple biological applications. Carbon-based ultracapacitive devices hold promise for controlling bioactive ions via electric double layers due to their high-surface-area and biocompatible porous carbon electrodes. However, the interplay between complex bioactive ions and porous carbons remains unclear due to the variety of structures of bioactive ions present in biological systems. Herein, we investigate the adsorption behavior of a series of bioactive ammonium-based cations with varying alkyl chain lengths in nanoporous carbons. We find that strong physisorption results from the synergistic hydrophobic interaction and electrostatic attraction between porous carbons (with a negative zeta potential) and bioactive cations. Bioactive cations with varying alkyl chain lengths can be irreversibly physically adsorbed and confined within nanoporous carbons resulting in anion enrichment and depletion during electric polarization. This situation, in turn, results in a characteristic memristive behavior in all-carbon capacitive ionic memristor devices. Our findings highlight the relationship between the resistance state of the memristor and ion adsorption mechanisms in all-carbon capacitive devices, which hold potential for future transmitter delivery, biointerfacing, and neuromorphic devices.

Bioactive Ion‐Confined Ultracapacitive Memristors with Neuromorphic Functions

The field of bioinspired iontronics, bridging electronic devices and ionic systems, has multiple biological applications. Carbon‐based ultracapacitive devices hold promise for controlling bioactive ions via electric double layers due to their high‐surface‐area and biocompatible porous carbon electrodes. However, the interplay between complex bioactive ions and porous carbons remains unclear due to the variety of structures of bioactive ions present in biological systems. Herein, we investigate the adsorption behavior of a series of bioactive ammonium‐based cations with varying alkyl chain lengths in nanoporous carbons. We find that strong physisorption results from the synergistic hydrophobic interaction and electrostatic attraction between porous carbons (with a negative zeta potential) and bioactive cations. Bioactive cations with varying alkyl chain lengths can be irreversibly physically adsorbed and confined within nanoporous carbons resulting in anion enrichment and depletion during electric polarization. This situation, in turn, results in a characteristic memristive behavior in all‐carbon capacitive ionic memristor devices. Our findings highlight the relationship between the resistance state of the memristor and ion adsorption mechanisms in all‐carbon capacitive devices, which hold potential for future transmitter delivery, biointerfacing, and neuromorphic devices.

Increased Static Charge‐Induced Threshold Voltage Shifts and Memristor Activity in Pentacene OFETs Comprising Polystyrene‐Based Gate Dielectrics Containing Electroactive Small Molecule Crystallites

AbstractTop‐contact bottom‐gate pentacene OFETs are fabricated with single layer dielectrics comprised of either polystyrene (PS), poly(4‐methylstyrene) (P4MS), or poly(4‐tert‐butylstyrene) (P4TBS). The polystyrenes are blended with varying concentrations of two different small molecules, dibenzotetrathiafulvalene (DBTTF) and 2,8‐difluoro‐5,11‐bis(triethylsilylethynyl)anthradithiophene (diF‐TES‐ADT), to form small, separated crystallites contained throughout the polymer dielectric layer. The OFET characteristics of these devices are investigated and their threshold voltage shifts are measured after −70 V static charging for 5 min. Two‐terminal measurements are conducted using multiple different gate biases in the range of −50 to +50 V to investigate memristor behavior in the devices. OFETs containing DBTTF exhibited ΔVth increases as large as 330% relative to control OFETs containing no DBTTF, while OFETs containing at least 7.5 wt.% DBTTF exhibited memristor activity, with currents ranging from 20 nA to 44 µA depending on the applied bias. This work demonstrates that including small, separated crystallites in polymer dielectrics enhances their charge storage ability and can be promising for creating nonbinary memory devices for data processing. Additionally, the observed memristor activity indicates the OFETs in this work can be used in development of neuromorphic systems that aim to mimic the synaptic behavior of the human nervous system.

Transformation of MoSe2 to MoSe2-xOyvia controlled oxidation for high-performance resistive switching

The current study shows an improvised resistive switching in oxygenated MoSe2 (MoSe2-xOy) thin film. 2D nanosheets assembled nanoflower morphology of MoSe2 was synthesized with hydrothermal route and then treated with thermal oxidation process at 300⁰C in presence of 0, 0.5, 5 and 20 % of oxygen. The coexistence of MoSe2 and MoOx in each samples was investigated with various spectroscopic techniques. The conversion to MoOx was maximum in 20 % O2 treated sample while other samples were converted partially. Au/MoSe2-xOy/Au structured devices were fabricated on SiO2/p-Si substrate and tested for resistive switching study. Among all four devices, 5 % O2 treated MoSe2-xOy exhibited excellent filamentary type bipolar resistive switching with very low SET and RESET voltages of + 0.84 V and −0.79 V, respectively. The device showed ION/IOFF ratio ∼50 (at read voltage: 0.5 V) with excellent retention (106 s) and endurance (100 cycles) characteristics with minimum cycle-to-cycle variation. The resistive switching mechanism was explained with valance change conducting filament formation/rupture model and the trap-controlled space charge limited current behavior. Rich transport properties of 2D-chalcogenide (MoSe2) and classic oxygen vacancy migrated switching of metal oxide (i.e. MoOx), were simultaneously important for achieving high performance memristive behavior in 5 % O2 treated MoSe2.

Memristive behaviour of Al/rGO-CdS/FTO device at different temperatures: A MATLAB-integrated study

In the present work, a comprehensive study is carried out to investigate the memristive behaviour of reduced graphene oxide (rGO) conjugated cadmium sulphide quantum dot (CdS QD) nanocomposites (rGO-CdS), offering insights into their dynamic response under varying thermal conditions. The study integrates experimental analysis with MATLAB simulation to provide a detailed understanding of the complex interplay between different operating temperature (300K, 350K, 400K, and 450K) and memristive behavior in rGO-CdS nanocomposites. Different structural and chemical characterizations were carried out which confirms the formation of rGO-CdS nanocomposites. A sandwich structured device was fabricated with the synthesized rGO-CdS nanocomposites using Aluminum (Al) as top and Fluorine doped tin oxide (FTO) as bottom electrode. The influence of operating temperature on hysteresis behaviour of the fabricated Al/rGO-CdS/FTO device was investigated using Keithley 2450 source meter by sweeping a direct current (dc) voltage (−5 V → 5 V → −5 V). Notably, we observe a positive temperature coefficient in the device current, with maximum and minimum recorded current of |1.29mA| and |0.66mA| at 450K and 300K respectively. The current-voltage (I-V) behavior observed in the device reveals that in the low resistance state (LRS), conduction is dominated by bulk-limited mechanisms. However, in the high resistance state (HRS), conduction involves contributions from both Schottky barriers and the Pool-Frenkel effect. A MATLAB based linear drift model was used to simulate the device responses at different temperatures using the experimental data. The study provides first comprehensive analysis of temperature dependent hysteresis behaviour of Al/rGO-CdS/FTO device, integrating MATLAB simulation to glean valuable insights into its operation and possible applications as memristive material across different temperature regimes.

Redox-Active Polyaniline Covalently grafted Black Phosphorus Nanosheets for Integrated Digital-Analogue Memristors.

Surface covalent modification of black phosphorus (BP) with organic polymers represents a promising strategy to enhance its stability and tailor its electronic properties. Despite this potential, developing memristive materials through suitable polymer structures, grafting pathways, and polymerization techniques remains challenging. In this study, polyaniline (PANI)-covalently grafted black phosphorus nanosheets (BPNS) are successfully prepared with redox functionalities via the in situ polymerization of aniline on the surface of 4-aminobenzene-modified BPNS. The PANI coating protects the BP from direct exposure to oxygen and water, and it endows the material with analog memristive properties, characterized by a continuously adjustable resistance within a limited voltage scan range. When subjected to a broader voltage scan, the Al/PANI-g-BPNS/ITO device demonstrates a typical bistable digital memristive behavior. The integration of both digital and analog memristive functionalities in a single device paves the way for the development of high-density, multifunctional electronic components.

Constructing a supercapacitor-memristor through non-linear ion transport in MOF nanochannels.

The coexistence and coupling of capacitive and memristive effects have been an important subject of scientific interest. While the capacitive effect in memristors has been extensively studied, the reciprocal scenario of the memristive effect in capacitors remains unexplored. In this study, we introduce a supercapacitor-memristor (CAPistor) concept, which is constructed by leveraging non-linear ion transport within the pores of a metal-organic framework zeolitic-imidazolate framework (ZIF-7). Within the nanochannels of the ZIF-7 electrode in an aqueous pseudocapacitor, the anionic species (OH-) of the electrolyte can be enriched and dissipated in different voltage regimes. This difference leads to a hysteresis effect in ion conductivity, constituting a memristive behavior in the pseudocapacitor. Thus, the pseudocapacitor-converted CAPistor seamlessly integrates the programmable resistance and memory functions of an ionic memristor into a supercapacitor, demonstrating enormous potential to extend the traditional energy storage applications of supercapacitors into emerging fields, including biomimetic nanofluidic ionics and neuromorphic computing.

Seed Layer Effect on Memristive Behaviors of Trilayer Spin–Orbit Torque Device

Seed Layer Effect on Memristive Behaviors of Trilayer Spin–Orbit Torque Device

Electrically-driven IMT and volatile memristor behavior in NdNiO3 films

Abstract Transition metal oxides with insulator-metal transitions (IMTs) are uniquely suited for volatile memristor devices that mimic the spiking of biological neurons. Unlike most non-volatile memristors, which often operate via ion migration into filaments, volatile devices utilize a reversible phase change that returns to a ground state in the absence of applied stimulus. In these devices, Joule heating triggers the IMT and changes the bulk resistivity rather than influencing conduction through defects, as in previous studies. This volatile resistive switching behavior has previous been leveraged in niobium and vanadium oxides, but not in rare-earth nickelates, despite their tunable transition temperatures. This study demonstrates an electrically driven IMT in the prototypical rare-earth nickelate, NdNiO3, in large area devices. While previous work examining the electrically-driven IMT in NdNiO3 suggests defect-dominated conduction, this study shows clear s-type negative differential resistance (NDR) consistent with temperature-dependent resistivity measurements. The NDR peak-to-valley voltage scales linearly with temperature as expected for conductivity pathways dominated by bulk IMT behavior. Unlike other transition metal oxides, which are modeled using the insulator-metal phase fraction as the internal state variable, a thermoelectric model with temperature as the internal state variable is found to more accurately describe the current–voltage characteristic of NdNiO3 volatile memristors. Overall, we report the synthesis, fabrication, and characterization of NdNiO3 volatile memristors with resistivity dominated by bulk-like IMT behavior which is scalable and not dependent upon oxygen vacancy migration or defect mediated conduction pathways.

Synchronization evaluation of memristive photosensitive neurons in multi-neuronal systems

At the forefront of brain-computer interface (BCI) technology exploration, the synchronization phenomenon in neural networks demonstrates significant potential for application. This paper focuses on the memory characteristics and nonlinear dynamic behavior of memristors, an emerging electronic component. By innovatively integrating memristors, phototubes, and FitzHugh-Nagumo (FHN) circuits, we construct a memristive photosensitive neuron (MPN) model, aiming to explore its unique role in neural network synchronization. Utilizing the memristors' inherent memory capabilities and nonlinear properties, the MPN model mimics the dynamic behavior of biological neurons. Experiments show that synchronization is highly sensitive to the memristor's initial values, revealing intricate synchronization regulation mechanisms. Furthermore, we find that chaotic electrical currents, as environmental disturbances, have dual effects—either promoting or inhibiting MPN network synchronization—depending on specific parametric conditions. To simulate a realistic biological neural network and achieve efficient coupling among multiple MPN units, this paper adopts a Hopfield network structure. The results indicate that this structure significantly enhances the synchronization stability of the system, reduces sensitivity to initial conditions, and mitigates the adverse effects of chaotic currents. This research not only enhances our understanding of neural network synchronization but also provides novel theoretical support and technical pathways for the development of BCI technology, indicating broad application prospects in neuroscience, rehabilitative medicine, and other fields.