Synthesis and Anisotropic Memristive Behavior of Borophene Nanosheets

Abstract

Neuromorphic computing, marked by its parallel computational abilities and low power usage, has become pivotal in advancing artificial intelligence. However, the advancement of neuromorphic computing has faced significant obstacles due to the performance limitations of traditional memory devices struggling with high power consumption and limited reliability. Two‐dimensional (2D) materials have been extensively investigated as high‐performance memristive materials, but they are often restricted by fixed memristive properties, which complicate circuit design and limit flexibility. Here, we report that multilayer borophene nanosheets represent a breakthrough material, displaying anisotropic variable memristive properties. The nanosheets, comprising semiconductor α’‐4H‐borophene sheets and metal β12‐borophene sheets, have been synthesized on aluminum foil surface through chemical vapor deposition (CVD) method. The multilayer borophene nanosheets exhibit volatile memory behavior in the vertical direction and non‐volatile memory behavior in the planar direction. This innovative class of 2D nanosheets not only overcomes the limitations of conventional memory devices but also expands the potential applications of borophene‐based memories in information storage and in‐memory computing.