Highly efficient CdTe solar cells were fabricated by introducing [email protected] as a composite back contact. The [email protected] was prepared by convenient solution-processed method. As a Cu-doping source and electron reflection layer, CuSCN could facilitate to dope CdTe and decrease the carrier recombination on the back surface of CdTe. The rGO, as a hole transport layer, could suppress unfavorable over-diffusion of Cu and improve hole collection and transport. The results show the obvious reduction of back barrier height and decrease of the dark current density in the devices with [email protected] back contact. Using facile coating method and optimal thermal annealing for the preparation of [email protected] composite back contact, CdTe solar cell presented greatly enhanced photovoltaic performance (Eff: 16.84%, Voc: 841 mV, Jsc: 26.83 mA/cm2, FF: 74.6%).