Band Edge Research Articles

Scaling Behavior in the Spectral and Power Density Dependent Photovoltaic Response of Hot Polaronic Heterojunctions

AbstractStrongly correlated manganites can be considered as model systems for the study of photovoltaic harvesting of hot polarons that can be excited from the electronically ordered ground state. In order to gain basic understanding of hot polaron harvesting, the deviations of the photovoltaic response of a heterojunction with polaronic absorber from a conventional semiconductor are analyzed. Specifically, the spectral and photon power density dependence of the open circuit voltage Uoc and the short circuit current density Jsc in heterojunctions consisting of orbital ordered Pr1‐xCaxMnO3 (x = 0.1, PCMO) thin films epitaxially grown on single crystalline (100) SrTiO3 (STO) and Nb‐doped (100) SrTiO3 (STNO) substrates are investigated. The observed behavior is fundamentally different from conventional solar cells, in which Uoc is limited by fast carrier relaxation to the band edges. Whereas the spectral and photon power dependence of Uoc of conventional semiconductor junctions is well described by the Shockley‐Queisser (SQ) theory, the hot polaron junctions surprisingly show a scaling law behavior of Uoc. Such scaling laws otherwise apply to equilibrium order parameters in second‐order phase transitions. It is concluded that its physical origin is the unique dependence of the quasi‐Fermi level splitting on temperature, photon energy, and power density in a hot polaron system.

Cathodic shift in flatband potential of hematite based photoelectrodes: Evaluating and correlating the redshift to solar driven photocatalysis

As a promising metal oxide semi-conductor, hematite (α-Fe2O3) has interesting optical properties to be regarded as photoactive material. In this study, we evaluated the cathodic shift in onset potential (Eonset) and the negative shift in flat band potential (Efb). It was observed that the Eonset value of −0.457 V for α-Fe2O3 based electrode shifted to −0.638 V for the ternary nanocomposite (PNFC) [Pani/Ni-α-Fe2O3/CNT] based electrode. The flat band potential for α-Fe2O3 in 1 M NaOH is at −0.49 V which shifts to −0.68 V for the ternary nanocomposite (PNFC). This photoelectrochemical enhancement appears due to electron-hole pair separation. Therefore, it apparently increases the photocurrent trace for PNFC at −0.60 V to 7.04 mA cm-2, compared to the photocurrent of 4.52 mA cm-2 observed for pristine α-Fe2O3. According to the Mott-Schottky plot, the donor concentration (Nd) for the α-Fe2O3 is 4.83 × 109 cm-3, whereas for the ternary nanocomposite (PNFC) is 7.68 × 109 cm-3, respectively. As evident, the Nd value increase for the ternary nanocomposite PNFC points to the proximity of the Fermi (Ef) level below the CB edge when Ni doped α-Fe2O3 comes in contact with polyaniline (Pani). Indeed, the ternary nanocomposite PNFC with lower Eg value (1.32 eV) and higher photocurrent (7.04 mA cm-2) show higher photo-activity with percent degradation of 98.42 % for photocatalytic degradation of Sunset Yellow under visible light irradiation. The aforementioned correlations of the energetic levels of band edges with the shifting of Efb to more negative potentials provide insight into the high photo-activity observed.

Charge Carrier Dynamics in Bandgap Modulated Covellite-CuS Nanostructures.

Copper Sulfide (CuS) semiconductors have garnered interest, but the effect of transition metal doping on charge carrier kinetics and bandgap remains unclear. In this study, the interactions between dopant atoms (Nickel, Cobalt, and Manganese) and the CuS lattice using spectroscopy and electrochemical analysis are explored. The findings show that sp-d exchange interactions between band electrons and the dopant ions, which replace Cu2+, are key to altering the material's properties. Specifically, these interactions result in a reduced bandgap by shifting the conduction and valence band edges and increasing carrier concentration. It is observed that undoped CuS nanoflowers exhibit a carrier lifetime of 2.16 ns, whereas Mn-doped CuS shows an extended lifetime of 2.62 ns. This increase is attributed to longer carrier scattering times (84 ± 5 fs for Mn-CuS compared to 53 ± 14 fs for CuS) and slower trapping (∼1.5 ps) with prolonged de-trapping (∼100 ps) rates. These dopant-induced energy levels enhance mobility and carrier lifetime by reducing recombination rates. This study highlights the potential of doped CuS as cathode materials for sodium-ion batteries and emphasizes the applicability of metal sulfides in energy solutions.

Temperature‐Dependent Recombination Dynamics of Photocarriers in CsPbBr3 Microcrystals Revealed by Ultrafast Terahertz Spectroscopy

AbstractThe ultrafast dynamics of photoexcited charge carriers are studied in micron‐scale crystals composed of the inorganic perovskite CsPbBr3 with time‐resolved terahertz spectroscopy. Exciting with photon energy close to the band edge, it is found that a fast (<10 ps) decay emerges in the terahertz photoconductivity with increasing pump fluence and decreasing temperature, dominating the dynamics at 4 K. The fluence‐dependent dynamics can be globally fit by a nonlinear recombination model, which reveals that the influence of different nonlinear recombination mechanisms in the studied pump fluence range depends on temperature. Whereas the Auger scattering rate decreases with decreasing temperature from 77 to 4 K, the radiative recombination rate increases by three orders of magnitude. Spectroscopically, the terahertz photoconductivity resembles a Drude response at all delays, yet an additional Lorentz component due to an above‐bandwidth resonance is needed to fully reproduce the data.

On the Bulk Photovoltaic Effect in the Characterization of Strained Germanium Microstructures

Strain engineering serves as an effective method for optimizing electronic and optical properties in semiconductor devices, with applications including the enhancement of optical emission in Ge and GeSn‐based devices, improvement of carrier mobility, and second harmonic generation in silicon photonics structures. Current methods for deformation characterization in semiconductors, such as X‐ray diffraction and Raman spectroscopy, often require bulky and expensive setups and are limited in vertical resolution. Consequently, techniques capable of measuring lattice strain while overcoming these drawbacks are highly desirable. This study proposes a proof of concept for a cost‐effective, compact, fast, and non‐destructive approach to probe non‐uniform strain fields and additional material properties by exploiting the bulk photovoltage effect. The method is benchmarked with an array of silicon nitride stripes deposited under varying pressure conditions on a germanium substrate. Initially, their surface strains are verified through Raman spectroscopy. The deformations are replicated in a finite element method platform by integrating mechanical simulations with deformation potential theory, thereby estimating the band edge energy landscape. Finally, the study discusses the theoretical behavior of the photovoltage signal, considering semiconductor properties, defects, doping, and deformation. The findings offer insights into the development of advanced techniques for strain and transport analysis in semiconductor materials.

Phase-sensitive pump-probe measurement of the complex nonlinear susceptibility of silicon across the direct band edge

The nonlinear response of materials, an increasingly important aspect of light-matter interaction, can be challenging to measure in highly absorbing materials. Here, we introduce an interferometric technique that enables a direct measurement of the nonlinear complex permittivity in a bulk medium from reflectivity alone. We demonstrate the utility of pump-probe supercontinuum (SC) spectral interferometry in reflection by measuring time-dependent variations in the complex dielectric function (n, k) over the visible wavelength range in bulk silicon. Transient phase shifts in the reflected SC due to a near infrared pump pulse allow us to track modifications to k, whereas changes in n are derived from transient fluctuations in the reflected SC probe amplitude. The ultrafast response is attributed to effective two-photon absorption (β) and Kerr (n2) coefficients. We observe the onset of strong two-photon absorption as the two-photon energy is tuned through the direct band edge of silicon (E1=3.4eV). This technique allows straightforward spectroscopic measurements of the χ(3) nonlinear response at the surface of absorbing materials.

Controlling the thiourea for optimized growth of CdS nanorod arrays for improved photoelectrochemical water splitting

Energy and the environment are very important issues to secure, preserve and improve our modern lifestyle. The conversion of sunlight into hydrogen and oxygen via photoelectrochemical (PEC) water splitting is one of the most potential routes for clean energy. Cadmium sulfide (CdS) is a promising semiconductor for utilization as a photoanode. In this work, CdS has been grown via the hydrothermal method by optimizing the thiourea concentration. The growth of CdS with equal concentration of Cd2+ and S2-demonstrates the crowded hexagonal-shaped nanorod arrays with small diameter and relatively longer length, and it exhibits the highest photocurrent density due to some factors, such as high length-to-diameter ratio, large reaction area, suitable flat band potential, slow charge recombination rate, fast charge transfer, suitable conduction and valence band edges, and surface reaction kinetics. This work will be of potential to further develop improved nanocomposites of CdS nanorods for hydrogen production and research in related fields.

Incorporation of hydroxyl groups and π-rich electron domains into g-C3N4 framework for boosted sacrificial agent-free photocatalytic H2O2 production

Photocatalytic synthesis of hydrogen peroxide (H2O2) based graphitic carbon nitride (g-C3N4) materials has garnered significant attention due to its green and sustainable attributes. In this study, g-C3N4 nanosheets enriched with π‑rich electron domains and hydroxyl groups were synthesized through the pyrolysis of urea-tartaric acid mixed solution, and subsequently utilized for efficient photocatalytic production of H2O2. The incorporation of π-rich electron domains induced a downward shift in the conduction band edge, which can significantly diminish the Coulombic interactions of singlet Frenkel excitons, thereby facilitating efficient photo-generated charge separation and accelerated charge migration. Simultaneously, the modification with hydroxyl groups in g-C3N4 network enhances water molecule adsorption, reducing side reactions and thereby increasing the efficiency of selective H2O2 generation. The integration of π-rich electron domains with hydroxyl groups in g-C3N4, along with a comprehensive understanding of their underlying mechanisms, provides valuable insights for the rational design and synthesis of highly active energy conversion catalytic materials.

Exploring charge transfer and schottky barrier modulation at monolayer Ge2Sb2Te5-metal interfaces

Monolayer Ge2Sb2Te5exhibits great potential in non-volatile memory technology due to its excellent electronic properties and phase-change characteristics, while the fundamental nature of Ge2Sb2Te5-metal contacts has not been well understood yet. Here, we provide a comprehensiveab initiostudy of the electronic properties between monolayer Ge2Sb2Te5and Pt, Pd, Au, Cu, Cr, Ag, and W contacts based on first-principles calculations. We find that the strong interaction interfaces formed between monolayer Ge2Sb2Te5and Pt, Pd, Cr, and W contacts show chemical bonding and strong charge transfer. In contrast, no apparent chemical bonding and weak charge transfer are observed in the weak interaction interfaces formed with Au, Cu, and Ag. Additionally, our study reveals the presence of a pronounced Fermi level pinning effect between monolayer Ge2Sb2Te5and metals, with pinning factors ofSn=0.325andSp=0.350. By increasing the interlayer distance, an effective transition fromn-type Ohmic contact ton-type Schottky contact is facilitated because the band edge of Ge2Sb2Te5is shifted upwards. Our study not only provides a theoretical basis for selecting suitable metal electrodes in Ge2Sb2Te5-based devices but also holds significant implications for understanding Schottky barrier height modulation between semiconductors and metals.

Influence of Ca-substituted K-induced cluster defects on the electronic structure and optical properties of KDP crystals

Compensation mechanism following Ca substitution in K sites was computed using GULP. Utilizing density functional theory for three charge states, the impact of defect clusters CaK + VK/CaK + VH on potassium dihydrogen phosphate (KDP) crystals in both phases was assessed. Corrections to the band edge and defect formation energies were made employing hybridization floods HSE06 and FNV. Neutral and −1 valence defect states emerged. Cluster defects induced pronounced lattice distortion in PE-KDP. Notably, PE-KDP exhibited an additional photoemission of 2.89 eV, signifying a substantial structural impact. Comparative stability analysis favored FE-KDP, offering theoretical guidance for KDP crystal utilization.

Two-Level regulation photocatalytic activity of Bi2WO6/COFs with ligand engineering and piezoelectric field for Highly-Efficient degradation of antibiotics

Covalent organic frameworks (COFs) have attracted significant attention in photocatalytic water purification due to their structural designability and sufficiently negative conduction band edges. However, the limited oxidation capacity of single COFs and the low utilization rate of photogenerated carriers result in suboptimal catalytic activity. To address these challenges, we propose a two-level regulation strategy that involves ligand engineering and the introduction of a piezoelectric field to enhance the photocatalytic performance of COF-based photocatalysts. In this study, we combined the piezoelectric material Bi2WO6 with COFs modified with different ligands to design a series of Bi2WO6/R-COFs (R=H, F, CH3O) heterojunctions. Modifying COFs with –OCH3 functional group tuned the local electron distribution, thereby remarkably improving photogenerated electrons transfer rate constant. Besides, the incorporation of Bi2WO6 generated a piezoelectric field under ultrasound, which provides a strong driving force for photocatalytic. Meanwhile, the construction of the heterojunctions offered multi-channel for the generation of reactive oxygen species. As a result, the photocatalytic degradation rate of Bi2WO6/CH3O-COFs reached 93.5 % toward sulfamethoxazole within 48 min under ultrasound-coupled light irradiation, which is nearly three times higher than Bi2WO6/H-COFs. Furthermore, Bi2WO6/CH3O-COFs demonstrated superior degradation performance for other pollutants, including p-chlorophenol, bisphenol A, tetracycline, and phenol, with degradation efficiencies of 99.0 %, 98.4 %, 93.5 % and 88.1 %, respectively. This work proposes a two-level modulation strategy that significantly enhances the antibiotic degradation performance of COF-based catalysts, offering a new perspective for the design of photocatalysts for environmental remediation.

A new type of pentagonal structure HgS2 monolayer with abundant active sites and low Gibbs free energy for photocatalytic water splitting

Discovery of new two-dimensional (2D) materials not only has important fundamental research significance but also has promising application prospects. Through systematic structure searching combined with density functional theory calculations and simulations, we predict a new 2D monolayer HgS2 material featuring with a previously unreported type of pentagonal structure with orthorhombic P21212 symmetry. The penta-HgS2 monolayer shows good thermal, thermodynamic, mechanical and dynamic stabilities, exhibiting ferroelastic phase transition with an ultralow switching energy barrier (about 1 meV/atom), high ultimate strength of 12 N/m, moderate indirect band gap of 2.25 eV. In addition, the penta-HgS2 monolayer shows significantly anisotropic carrier mobility with a large anisotropy ratio of 98.5 along the y direction. More importantly, the penta-HgS2 monolayer exhibits abundant catalytic active sites, low Gibbs free energy (ΔGH ranging from 0.656 to 1.687 eV) for hydrogen evolution reactions, excellent solar light absorption capacity (∼105 cm−1) with the solar-to-hydrogen efficiency reaching up to 11.83%. The excellent ultimate tensile ability and the ultralow ferroelastic phase transition energy barrier implies penta-HgS2 monolayer material can be used to manufacture flexible mechanical and nanoelectronic devices. The suitable band edge alignments, ultrahigh carrier mobility anisotropy, high catalytic activity and excellent visible light adsorption performance indicate that penta-HgS2 monolayer is a promising candidate photocatalyst for high-performance photocatalytic water splitting. The present work not only supplements a new member to the 2D pentagonal structure material family, but also points out its promising applications in nanoscale devices and photocatalytic hydrogen productions.

Centrosymmetric multipole solitons with fractional-order diffraction in two-dimensional parity-time-symmetric optical lattices

Multipole solitons in higher-dimensional nonlinear Schrödinger equation with fractional diffraction are of high current interest. This paper studies multipole gap solitons in parity-time (PT)-symmetric lattices with fractional diffraction. The results obtained demonstrate that both on-site and off-site eight-pole solitons with fractional-order diffraction can be stabilized in a two-dimensional (2D) PT-symmetric optical lattice with defocusing Kerr nonlinearity. These solitons are in-phase and centrosymmetric. On-site eight-pole solitons propagate in a square formation, while off-site solitons propagate in a two-by-four formation. Both on-site and off-site solitons are found to be stable within a low-power range in the first band gap. As the Lévy index decreases, the stability regions of both on-site and off-site solitons narrow. Off-site eight-pole solitons can approach the lower edge of the first Bloch band, whereas on-site eight-pole solitons cannot. Additionally, we investigate the transverse power flow vector of these multipole gap solitons, illustrating the transverse energy flow from gain to loss regions.

Carbon vacancy modified g-C3N4 hollow tubes-iron oxide composite for photocatalytic application

Graphitic carbon nitride (g-C3N4) has emerged as a non-metal, visible-light-active semiconductor with considerable potential in environmental photocatalysis. This research presents a straightforward method for creating carbon vacancy-modified g-C3N4 hollow tubes, resulting in enhanced performance. Utilizing single-step static air polymerization, we produced tubes with superior physicochemical and electronic properties, as confirmed by various characterization analyses. Remarkably, calcining the precursor at 550 ℃ greatly improved the photocatalytic efficiency in degrading methylene blue compared to other tubes synthesized under different conditions and bulk g-C3N4. Electrochemical tests revealed increased conductivity, higher charge carrier density, and an optimized conduction band edge, all contributing to the material's improved efficiency. Incorporating Fe2O3 further boosted the efficiency and stability, forming by Z-scheme heterojunction. Kinetic and thermodynamic parameters confirmed the feasibility of activity on the Fe2O3 modified surface. These features position the material as highly promising for dye photodegradation and broader environmental applications.

Linking Electronic and Structural Disorder Parameters to Carrier Transport in a Modern Conjugated Polymer.

Understanding charge transport in conjugated polymers is crucial for the development of next-generation organic electronic applications. It is presumed that structural disorder in conjugated polymers originating from their semicrystallinity, processing, or polymorphism leads to a complex energetic landscape that influences charge carrier transport properties. However, the link between polymer order parameters and energetic landscape is not well established experimentally. In this work, we successfully link statistical surveys of the local polymer electronic structure with paracrystalline structural disorder, a measure of statistical fluctuations away from the ideal polymer packing structure. We use scanning tunneling microscopy/spectroscopy to measure spatial variability in electronic band edges in PM6 films, a high-performance conjugated polymer, and find that films with higher paracrystallinity exhibit greater electronic disorder, as expected. In addition, we show that macroscopic charge carrier mobility in field effect transistors and and trap influence in hole-only diode devices is positively correlated with these microscopic structural and electronic parameters.

Enhancing UV light sensitivity of PVP polymer by doping chromium trioxide via the electrospun solutions

Herein, chromium trioxide (Cr2O3) doped Polyvinylpyrrolidone(PVP) nanofibers with high crystallinity and UV light sensitivity are successfully grown onto the glass substrates by electrospun deposition at room temperature. The effect of Cr2O3 concentration on the morphology, structure, and photoluminescence properties of the as-fabricated PVP nanofibers is examined. With the increase in doping concentration of Cr2O3 (i.e., 1, 2 and 3 %), the direct band gap of PVP nanofibers is reduced to 4.05, 4.01, and 3.85 eV, respectively. XRD and FE-SEM results manifest that the crystallinity and diameter of the nanofibers are dependent upon Cr2O3 concentration, i.e., the mean diameter decreases from 600 to 200 nm. Photoluminescence spectra indicate higher UV emission upon the addition of Cr2O3, with greater emission near the band edge for thinner nanofibers. A possible mechanism for the formation of PVP/Cr2O3 nanofibers is addressed in detail. Furthermore, it is found that the sensitivity of the as-fabricated PVP/Cr2O3 detector to UV-light emission strongly depends on Cr2O3 concentration, i.e., good responsivity (2.257 A/W) and specific detectives (9.8 × 1012 cm Hz1/2/W) at a Cr2O3 concentration of 2 % are achieved at a wavelength of 454.1 nm, besides recording the lowest rise and fall times.

On analysis of structural and optical absorption characterization of Bi35Sb5Se60 nanostructured thin films for photosensing application

In this extensive study, the primary focus is directed towards the intricate exploration of the optical absorption characteristics inherent in nanostructured Bi35Sb5Se60 thin films, prepared by thermal evaporation under a vacuum of 10−5 Torr, ensuring high purity and uniformity for optoelectronic applications. With a particular emphasis on their prospective application in photosensing devices. The research employs a comprehensive approach, integrating various spectrophotometric measurements that encompass both transmission and reflection analyses. The meticulous examination of the absorption edge characteristics reveals a direct energy gap of 1.82 eV, providing a foundational understanding of the material's electronic structure. The determination of the dispersion energy at 6.35 eV and the oscillator energy at 2.96 eV further enriches the understanding of the material's optical behavior, shedding light on its capacity to interact with incident light. A noteworthy highlight emerges with the identification of high photosensitivity exhibited by the heterojunction, particularly under lower reverse bias conditions, underscoring its potential utility in photosensing applications. The PL spectra reveal a highly broadened defect emission band with peaks at 475 nm, 490 nm, and 540 nm, providing insights into the recombination processes within the material. The identification of emission peaks related to the conduction band edge and acceptor levels further enhances the comprehension of the material's optical and electronic characteristics. underscores the potential of these nanostructured thin films for efficient photosensing devices. The findings presented in this research not only advance the understanding of the material's properties but also lay a robust foundation for further research and development in the design and optimization of photoresponsive devices within the realm of optoelectronic technologies.

Photonic defect modes in cholesteric liquid crystal resonators with embedded isotropic layers

Photonic defect modes are explored as a viable alternative to standard photonic band edge modes in photonic crystal applications, especially due to their typically high Q-factors and local density of states. For example, they can be used in nonlinearity enhancement, lasing, and cavity quantum electrodynamics. However, they are strongly dependent on any structural change and need to be well-controlled to ensure the desired resonance frequency. Here, we present a study of the photonic defect modes that appear in a structure where a layer of isotropic material is embedded between two layers of cholesteric liquid crystal (CLC), using full electrodynamics numerical simulations. We present typical transmission spectra and electric field profiles of selected defect modes and then analyze the influence of geometrical and material parameters on the eigenfrequencies and Q-factors of the modes within and around the photonic bandgap, including refractive indices and thicknesses of isotropic and liquid crystal layers, and different anchoring orientations at the boundaries of the isotropic defect layer. Additionally, a connection of such defect modes to previously extensively analyzed twist defect modes is given. Eigenmodes in asymmetric resonators are also presented, where CLC layers surrounding the intermediate isotropic layer are not equally thick, enabling biasing of specific directional light emission. More generally, this work aims to contribute to the understanding and design capability in topological soft matter photonics where defect mode lasing could be realized in CLC geometries with different singular and solitonic topological defect structures.

Influence of local structure and metal-oxygen hybridization on the electrical and magnetic properties of alkaline earth metal (Mg2+, Ca2+, Sr2+) substituted LaFeO3 ceramics

Pristine and alkaline-earth metal-substituted LaFeO3 (La1−xAxFeO3−δ; x = 0 and 0.2; A = Mg2+, Ca2+, and Sr2+) sintered ceramics are prepared from nanoparticles synthesized via a low-temperature citrate sol–gel technique. X-ray diffraction studies confirm the formation of a phase-pure LaFeO3 structure without any secondary phases for all the La1−xAxFeO3−δ compositions. LaFeO3 and La0.8Mg0.2FeO3−δ ceramics show Raman active modes related to La vibration, oxygen octahedral tilting, bending, and stretching. The optical bandgap is estimated to be 2.34 eV for pure LaFeO3 and reduces to 2.23 eV for La0.8Mg0.2FeO3−δ ceramics. On the contrary, La0.8Ca0.2FeO3−δ and La0.8Sr0.2FeO3−δ ceramics show no features in Raman spectra, consistent with the observation of metallic nature and diffuse band edge without any indication of sharp band edge noted. X-ray absorption spectroscopy (XAS) studies on La-L3 and Fe-K-edges confirm the oxidation states of La3+ and Fe3+ in all these ceramics. Local structural distortions and formation of oxygen vacancies in La0.8A0.2FeO3−δ (A = Mg2+, Ca2+, and Sr2+) ceramics are discerned from XAS structure analysis compared to the pristine LaFeO3 ceramics. Magnetic measurements of La1−xAxFeO3−δ reveal weak ferromagnetic nature except for La0.8Mg0.2FeO3−δ, which shows a large magnetization of 4.6 (6.7) emu/g at 300 (5) K. The ferromagnetic behavior of La0.8Mg0.2FeO3−δ ceramics seems to originate from the modification of hybridization between Fe(3d)–O(2p), La(5d)–O(2p), and Fe(4sp)–O(2p) orbitals. An anomalous magnetic transition observed only in zero-field-cooled curves at 88 K in La0.8Ca0.2FeO3−δ and La0.8Sr0.2FeO3−δ ceramics is correlated to the formation of new electronic states containing O 2p character as discerned from pre-peak O-K-edge.

SnS2 Nanoparticles Embedded in BiVO4 Surfaces via Eutectic Decomposition for Enhanced Performance in Photoelectrochemical Water Splitting.

BiVO4 has garnered substantial interest as a promising photoanode material for photoelectrochemical water-splitting due to its narrow band gap and appropriate band edge positions for water oxidation. Nevertheless, its practical use has been impeded by poor charge transport and sluggish water oxidation kinetics. Here, a hybrid composite photoanode is fabricated by uniformly embedding SnS2 nanoparticles near the surface of a BiVO4 thin film, creating a type II heterostructure with strong interactions between the nanoparticles and the film for efficient charge separation. This structure forms via eutectic melting during atomic layer deposition of SnS2 with subsequent phase separation between SnS2 and BiVO4 at room temperature, offering greater advantages and flexibilities over conventional exsolution techniques. Furthermore, the SnS2/BiVO4 hybrid composite is coated with a thin amorphous ZnS passivation layer to accelerate charge transfer process and enhance long-term stability. The optimized BiVO4/SnS2/ZnS photoanode exhibits a photocurrent density of 5.44mAcm-2 at 1.23V versus RHE, which is 2.73 times higher than that of the BiVO4 photoanode, and a dramatic improvement in photostability retention at 1.23V versus RHE, increasing from 55% to 91% over 24 hours. This method of anchoring nanoparticles onto host materials proves highly valuable for energy and environmental applications.