Back Surface Field Research Articles

Computational analysis of a Cu3VS4-based solar cell with a V2O5 back surface layer

This study has described the development and computational evaluation of Cu3VS4 (CVS) based highly potential thin film solar cell where ZnS is exploited as the transparent layer and V2O5 as the back surface field (BSF) layer, respectively, to form the n-ZnS/p-Cu3VS4/p + -V2O5 hetero-junction. The investigation has highlighted the significant influence of the V2O5 BSF layer on the device performance. The standalone n-ZnS/p-Cu3VS4 device exhibits an open circuit voltage (VOC) of 0.87 V, a short circuit current (JSC) of 33.89 mA/cm2, a fill factor (FF) of 86.72%, and a power conversion efficiency (PCE) of 25.68%. The incorporation of the V2O5 BSF layer has enhanced the PCE to 28.33%, where VOC reached 0.94 V, JSC to 34.39 mA/cm2, and FF to 87.47%. This improvement in VOC has been attributed to the V2O5 BSF layer, leading to increased built-in potential and reduced surface recombination velocity at device interfaces. These findings suggest promising prospects for advancing high-efficiency CVS dual-heterojunction (DH) PV cells in the coming days.

Photovoltaic Efficiency Enhancement of Indium-Free Wide-Bandgap Chalcopyrite Solar Cells via an Aluminum-Induced Back-Surface Field Effect.

Wide-bandgap chalcopyrite materials are attractive candidates for a wide variety of energy conversion devices such as the top cell of tandem-type photovoltaic devices and photoelectrochemical water splitting hydrogen evolution devices. Nevertheless, simultaneous realization of high open circuit voltage (VOC) and high fill factor (FF) values has been challenging, and thus, the photovoltaic performance has been limited. In this article, high VOC and high FF values of wide-gap chalcopyrite CuGaSe2 thin-film solar cells are simultaneously demonstrated using an aluminum-induced back-surface field effect. An independently certified photovoltaic efficiency of 12.25% was obtained from an elemental In-free CuGaSe2:Al (bandgap energy ∼1.7 eV) solar cell (VOC: 0.959 V, short circuit current density: 17.64 mA cm-2, FF: 72.5%). In addition, an over 1 V-VOC CuGaSe2 cell (FF: 74.5%) was obtained even with the use of a conventional CdS buffer layer. Although incorporation of aluminum often leads to degradation of the chalcopyrite solar cell performance, the addition of a small amount of aluminum is found to be effective in enhancing wide-gap chalcopyrite photovoltaic performance.

SCAPS numerical modeling of CBTS/WO3 thin film solar cell

The quaternary compound Cu2BaSnS4 (CBTS) has emerged as a suitable and attractive light-harvesting material due to its promising optoelectronic features as well as nontoxic and low-cost constituent elements. Yet efficiency of CBTS-based solar cells did not reach the Shockley-Queisser limit. Here, what we believe to be a novel structure ITO/WO3/CBTS heterojunction solar cell is designed and modeled using a solar cell capacitance simulator in one-dimension (SCAPS-1D). In this work, a what we also believe to be a novel WO3 as a buffer layer is proposed for the first time for the efficiency enhancement of CBTS thin film solar cells. Numerical investigation of the performance of CBTS-based solar cells without and with cuprous oxide (Cu2O) back surface field (BSF) is explored. The impact of thickness, doping density, bulk, and interface defect density of an absorber, buffer and window layer, working temperature, shunt and series resistance, back contact work function, and back surface recombination velocity were analyzed and optimized without and with the BSF layer. In this work, the optimized solar cell achieved an efficiency of 18.8%, fill factor (FF) of 83.79%, short-circuit current density (JSC) of 15.99 mA/cm2, and open circuit voltage (VOC) of 1.4 V without Cu2O BSF layer at optimal CBTS absorber and WO3 buffer layer thickness of 2 µm and 0.04 µm respectively. Furthermore, the efficiency boosted to 21.12% with VOC of 1.43 V, JSC of 16.8 mA/cm2 and FF of 87.77% by inserting 0.1 µm Cu2O BSF layer. Therefore, these results will facilitate the fabrication of an efficient and low-cost CBTS-based solar cell with promising WO3 and Cu2O as buffer and BSF layer, respectively.

A comparative numerical simulation study of CIGS solar cells with distinct back surface field layers for enhanced performance

The objective of this study is to explore the impact of various back surface field (BSF) layers including copper aluminium oxide (CuAlO2), Copper Antimony Sulphide (CuSbS2), Formamidinium tin triiodide (FASnI3), poly(3-hexylthiophene) P3HT to boost the output of conventional baseline CIGS solar cells structured. The device performance increases because of the minimized surface recombination velocity through heavily doped BSF layers, which increases the electric field at the rear contact. Among all proposed BSF layers CuAlO2 gives the best photoconversion efficiency (η) of 24.61% followed by fill factor (FF) of 83.11 %, short circuit current density (JSC) of 35.87 mA/cm2, and open circuit voltage (VOC) of 0.82 V with quantum efficiency (QE) of ∼92 % for the whole visible range with the onset happening at ∼ 560 nm, thanks to the enhancement of carrier collection when BSF layer is incorporated. The novelty in this work is that for the first time with the CuAlO2 BSF layer, 24.61% efficiency is reported at 1 μm CIGS layer thickness. We also examined how different BSFs affect the PV performance of the devices. The effect of temperature, the doping concentration of the BSFs, varying gallium proportion, JV & QE analysis, band diagram, and radiative recombination coefficient are varied to observe their impact on the PV parameters. This research introduces novel CIGS/CdS heterojunction configurations using various BSF layers to enhance efficiency, supporting the advancement of ultrathin, flexible, and tandem solar cell applications.

Comprehensive study on the optoelectronic properties of ZnSnP2 compound by DFT and simulation for the application in a photodetector

Abstract This article presents the density function theory (DFT) calculation of ZnSnP2 (ZTP) and its application as a photodetector. A DFT calculation has been performed to determine ZTP's optical and electronic characteristics. The direct bandgap of ZnSnP2 is found to be 1.0 eV which agrees well with the previously reported bandgap (0.95 eV). The total density of states (TDOS) of ZTP is determined to be 1.40 states/eV which is attributed to the 3p orbital of P, with minor impacts from the 3d orbital of Zn and the 5p orbital of Sn to TDOS. The real and imaginary dielectric functions and refractive indices ZTP have been determined to be 16.44 and 17.60, 4.07 and 2.92, respectively. The absorption coefficient and reflectivity of ZTP obtained from this investigation are 2.6×105 cm-1 and 57.5%, respectively. After calculating the electrionic and optical properties, ZTP-based n-CdS/p-ZnSnP2/p+-AlSb photodetector (PD) with CdS and AlSb as the window and back surface field (BSF) layers, respectively, has been computationally analyzed and optimized using solar cell capacitance simulator (SCAPS-1D). In a single heterojunction, the photocurrent, voltage, responsivity, and detectivity values have been obtained at 44.52 mA/cm2, 0.66 V, 0.73 A/W, and 6.81×1013 Jones, respectively. Insertion of a thin AlSb BSF layer improves the photocurrent, voltage, responsivity, and detectivity to 48.75 mA/cm2, 0.78 V, 0.86 A/W, and 8.22×1014 Jones, respectively. The outcomes are highly promising for the fabrication of a high performance ZTP-based PD in the future.

Probing the Impact of Four BSF Layers on MASnI3‐Based Lead‐Free Perovskite Solar Cells for >33% Efficiency

AbstractThis study systematically investigates the impact of various layers of the back surface field (BSF) on the performance of CH₃NH₃SnI₃ (MASnI₃)‐based lead‐free mixed organic–inorganic halide perovskite solar cells. By employing SCAPS‐1D (Solar Cell Capacitance Simulator in One Dimension) simulation software, the behavior of solar cells is analyzed incorporating BSF layers of CuI, NiO, ZnTe, and CBTS. The findings indicate that the inclusion of these BSF materials significantly enhances power conversion efficiency (PCE), with CBTS showing the highest PCE of 33.57%. The energy band diagrams reveal that the BSF layers effectively reduce recombination losses at the rear interface and improve charge carrier collection. Detailed analysis of photovoltaic parameters, such as open‐circuit voltage (Voc), short‐circuit current density (Jsc), fill factor (FF), and overall PCE, underscores the superiority of CBTS as optimal BSF materials. Temperature variation studies demonstrate that CBTS maintains superior performance across a range of temperatures, highlighting its potential for high‐efficiency, thermally stable perovskite solar cells. This comprehensive investigation provides valuable insights for optimizing the design and performance of MASnI₃‐based perovskite solar cells, with the aim of efficiencies greater than 33%.

Highly efficient 2D transition metal Dichalcogenides/SnSe solar cells using Sb2S3 as a back surface field and interfacial layer engineering

Boosting the performance of solar cells is crucial for advancing photovoltaic technology. This study investigates the integration of alternative 2D materials to enhance the performance of solar cells. Three solar cell configurations sample 1 with CdS, sample 2 with MoS2, and sample 3 with SnS2 are systematically investigated via numerical simulation. The simulation framework is validated against experimental data, demonstrating good agreement. Alternative 2D materials are explored to replace toxic CdS and improve the Voc through suitable band alignment with the absorber material, SnSe. Additionally, Sb2S3 is introduced as a back surface field (BSF) for the first time, resulting in increased efficiencies across all three samples. Further performance enhancements involve the insertion of 2D interfacial layers between the electron transport layer (ETL) and absorber to mitigate interface defects. Thirteen materials are evaluated as interfacial layers and nine metals as back contacts, revealing Ni as the optimal back contact for all samples, while MoS2, SnS2, and WS2 are identified as suitable interfacial layers for samples 1, 2, and 3, respectively. Analysis of the solar cells reveals that sample 2, incorporating MoS2 and SnS2, achieves the highest efficiency at 13.58 %. This outperforms sample 3 at 13.55 % and sample 1 at 13.13 %. Sample 2′s superior performance is attributed to the effective utilization of 2D transition metal dichalcogenide (TMDC) materials, which enhance charge carrier transport and minimize recombination losses within the cell structure. Optimized solar cell configurations are modeled using a one-diode approach to build corresponding modules. These modules, created by connecting solar cells in series and parallel, are evaluated through simulated I-V characteristics and power output under standard test conditions. Analysis reveals that Module 2 exhibits superior performance, with higher short-circuit current (ISC) and open-circuit voltage (VOC) compared to Modules 1 and 3. Overall, this study demonstrates the significant role of 2D TMC materials in advancing solar cell performance, providing valuable insights for future solar energy applications.

On the performance and thermal stability of solar cell based on CIGS-Sb2S3 combination with >35% power conversion efficiency

This study presents a solar cell design utilizing a CIGS (copper-indium-gallium-selenide) absorber and Sb2S3 (antimony trisulfide) back surface field (BSF) layers, targeting high photovoltaic (PV) performance with an emphasis on minimum possible effect of ambient temperature. We simulated a solar cell design consisting of zinc oxide, surface defect layer, zinc sulfide, CIGS layer, and an Sb2S3 layer using SCAPS-1D software. Our findings indicate that 200 nm Sb2S3 layer and a 1600 nm CIGS layer is the preferred combination for achieving high PV performance and appropriate J-V characteristics of the proposed solar cell. For this design, the achieved values of VOC (open circuit voltage), JSC (short circuit current density), PCE (power conversion efficiency), and fill factor (FF) are 1.069V, 42.08 mA/cm2, 35.94%, and 80.31%, respectively. The PV performance of the proposed solar cell is substantially better than the solar cell design without BSF layer as well as recently reported (2023-24) solar cell designs. This study further examines the impact of elevated ambient temperatures (295–360 K) on the PV performance. Our simulation results show that operating the proposed solar cell at moderately elevated temperatures is not a significant issue owing to small power temperature coefficient (-0.034% per K), which is comparable to that of commercially available solar cells. These findings are expected to contribute to the ongoing advancement of PV solar cells, aiming for higher PCE and improved stability, including thermal stability. Proposed solar cell with low PTC and high PCE can be suitable for space applications where temperature fluctuation is severe, as well as in tropical areas.

Optimizing CuInSe2 solar cells with kesterite-based upper absorber and back surface field layers for enhanced efficiency: a numerical study

Abstract This study explores the performance enhancement of an innovative multi-layer solar cell structure using the SCAPS-1D (Solar Cell Capacitance Simulator in One Dimension) software. We aim to improve the efficiency of a solar cell structure comprising ZnO/ZnSe/CZTSe/CuInSe2/CZTSSe/Mo by incorporating CZTSe as the upper absorber layer, CuInSe2 as the main absorber layer, and CZTSSe as a back surface field (BSF) layer. Initially, we compare the performance of three different configurations by analyzing their J-V characteristics. For the best performing structure, we further examine the external quantum efficiency (EQE) spectrum. We then evaluate various window (ZnO, ZnMgO, SnO2, Zn2SnO4) and buffer (ZnSe, ZrS2, SnS2, In2S3) materials, identifying ZnO and ZrS2 as the most effective for achieving high current density and efficiency. Through detailed simulations, we determine the optimal thicknesses for CZTSSe (0.2 µm), CZTSe (0.4 µm), and CuInSe2 (3.2 µm). Additionally, by optimizing the acceptor density to 1020 cm−3, we significantly enhance the performance of both CZTSe and CZTSSe layers. Temperature management is shown to be crucial, with the highest efficiency observed at 300 K. As a result of these optimizations, the solar cell structure achieves a remarkable efficiency of 35.38%. Furthermore, we compare our results with existing literature to highlight the advancements made in this study. These findings underscore the importance of material selection and structural optimization in developing high-efficiency solar cells and provide a framework for future advancements in photovoltaic technology.

Advanced Numerical Modeling of BaZrS3 Chalcogenide Perovskite Cells: Titanium Alloying and Back Surface Field Effects

Chalcogenide perovskites are emerging as superior alternatives to hybrid halide perovskites for photovoltaic applications due to their non-carcinogenic composition and enhanced environmental resilience, including superior resistance to moisture. This study focuses on the computational modeling of BaZrS3 (Barium Zirconium Sulfide) based solar cells, featuring a native bandgap of ∼1.71 eV. Through precise bandgap engineering via Ti alloying at the Zr site, the study aims to optimize the bandgap to the ideal range for photovoltaic efficiency. The device architecture is further refined by adjusting parameters such as layer thickness, doping densities, trap densities and metal contacts. The optimum device efficiencies at this stage were found to be 22.45 % for BaZrS3; 23.91 % for Ba(Zr0.99Ti0.01)S3; 26.64 % for Ba(Zr0.98Ti0.02)S3; and 27.74 % for Ba(Zr0.97Ti0.03)S3. Additionally, the incorporation of various back surface fields (BSFs) (CdTe, CIGS, CZTSe, Cu2Te, FeSi2, GeSe, PbS, µc-Si, SnTe, SnS, Sn2S3, and WSe2) is investigated to enhance photo-absorption. The findings indicate that a Ti alloying concentration of 3 % at the Zr site, coupled with a Cu2Te BSF, achieves the highest efficiency, approximately 30 %. These optimized structures present a robust framework for developing efficient, stable, and non-toxic photovoltaic devices utilizing chalcogenide perovskites.

Increasing the efficiency of CIGS solar cells due to the reduced graphene oxide field layer of the back surface

Copper indium gallium selenide solar cells (CIGS-SCs) have gained attention due to their cost-effectiveness and environmentally friendly characteristics, making them a promising option for future electricity generation. The efficiency of CIGS-SCs can be enhanced by adding a back surface field layer (BSFL) under the absorber layer to reduce recombination losses. In this study, the electrical parameters, such as the series resistance, shunt resistance, and ideality factor, are calculated for CIGS-SCs with an advanced design, using the SC capacitance simulator (SCAPS) software. The detailed model used in the simulations considers the material properties and fabrication process of BSFL. By utilizing a reduced graphene oxide (rGO) BSFL, a conversion efficiency of 24% and a significant increase in the fill factor are predicted. This increase is primarily attributed to the ability of the rGO layer to mitigate the recombination of charge carriers and establish a quasi-ohmic contact at the metal-semiconductor interface. At higher temperatures, BSFL can become less effective due to an increased recombination and, in turn, a decreased carrier lifetime. Overall, this study provides valuable insights into the underlying physics of CIGS-SCs with BSFL and highlights the potential for improving their efficiency through advanced design and fabrication techniques.

Optimizing efficiency in CHTS-based solar cells through controlling tin content of (Zn, Sn)O buffer layer and integration of SnS as back surface field layer: a numerical approach

Optimizing efficiency in CHTS-based solar cells through controlling tin content of (Zn, Sn)O buffer layer and integration of SnS as back surface field layer: a numerical approach

Simulation study of cadmium-free CIGS solar cell for efficiency enhancement by minimizing recombination losses through back surface field mechanism

Thin-film photovoltaic cells provide benefits over conventional first-generation technology, including lighter weight, greater flexibility, and lower power generation costs. Chalcogenide solar cells offer good efficiency and technological maturity among thin-film technology. In this work, a solar cell device structure, Al/FTO/SnS2/CIGS/CuO/Ni, is examined using SCAPS-1D. Further, by incorporating the back surface field (BSF) layer, the conversion efficiency increased from 18.93 % to 29.88 %, followed by VOC of 0.96 V, JSC of 37.07 mA cm−2, and FF of 83.71 %. This increment in device performance is owing to the lowering back surface recombination velocity and the additional hole tunnelling activity offered by the BSF layer by forming a quasi-ohmic contact, i.e. metal-semiconductor contact with negligible junction resistance relative to the total resistance of the device. Throughout this research work, the authors studied several factors such as surface recombination velocity, temperature impact, front and back contact metal work functions, parasitic resistance impact, gallium proportion, and doping density impact on CIGS solar cells. The work also included a calibration with experimental data from published sources to validate the simulation results.This paper presents a new approach for producing high-efficiency, eco-friendly CIGS solar cells with CuO back surface field mechanism.

Assessment of photovoltaic efficacy in antimony-based cesium halide perovskite utilizing transition metal chalcogenide

Antimony-based perovskites have been recognized for their distinctive optoelectronic attributes, standard fabrication methodologies, reduced toxicity, and enhanced stability. The objective of this study is to systematically investigate and enhance the performance of all-inorganic solar cell architectures by integrating Cs3Sb2I9, a perovskite-analogous material, with WS2—a promising transition metal dichalcogenide—used as the electron transport layer (ETL), and Cu2O serving as the hole transport layer (HTL). This comprehensive assessment extends beyond the mere characterization of material attributes such as layer thickness, doping levels, and defect densities, to include a thorough investigation of interfacial defect effects within the structure. Optimal efficiency was observed when the Cs3Sb2I9 absorber layer thickness was maintained within the 600-700 nm range. The defect tolerance for the absorber layer was identified at 1×1015/cm3, with the ETL and HTL layers exhibiting significant defect tolerance at 1×1016/cm3 and 1×1017/cm3, respectively. Furthermore, this study calculated the minority carrier lifetime and diffusion length, establishing a strong correlation with defect density; a minority carrier lifetime of approximately 1 µs was noted for a defect density of1×1014/cm3 in the absorber layer. A noteworthy finding pertains to the balance between the high work function of the back contact and the incorporation of p-type back surface field layers, revealing that interposing a highly doped p+ layer between the Cu2O and the metal back contact can elevate the efficiency to 21.60%. This approach also provides the freedom to select metals with lower work functions, offering a cost-effective advantage for commercial-scale applications.

Efficiency enhancement of CZTS solar cell with WO3 buffer layer using CZTSe BSF layer

Non-toxic, low-cost, and bandgap-direct material Copper Zinc Tin Sulphide (CZTS) is a promising candidate thin film solar cell. As the effort to improve the efficiency of the CZTS solar cell, this work chooses an environmentally friendly tungsten oxide (WO3) as the buffer layer due to its high bandgap and excellent electrical conductivity. Furthermore, Cu2ZnSnSe4 (CZTSe) is employed as the back surface field (BSF) layer which is sandwiched between the absorber layer and the back contact layer. A new structure Pt/CZTSe/CZTS/WO3/ZnO is proposed and a comparative study is done between structures with and without BSF layer. The research investigates how the layer thickness, operating temperature, different back contact layer, acceptors, and defects in BSF layer affect the performance of CZTS solar cell using the solar cell capacitance simulator (SCAP-1D) simulation software. Efficiency of CZTS solar cell with WO3 is greatly improved with efficiency as high as 29.37 % for the proposed new structure.

Numerical evaluation and optimization of high sensitivity Cu2CdSnSe4 photodetector

Copper cadmium tin selenide (Cu2CdSnSe4) based photodetector (PD) has been explored with the solar cell capacitance simulator (SCAPS-1D). Herein, cadmium sulfide (CdS) and molybdenum disulfide (MoS2) are used as a window and back surface field (BSF) layers, respectively. The physical attributes, such as width, carrier density and bulk defects have been adjusted to attain the optimal conditions. In an optimized environment, the performance parameters of the Cu2CdSnSe4 (CCTSe) PD e.g. open circuit voltage (VOC), short circuit current (JSC), responsivity, and detectivity are determined as 0.76 V, 45.57 mA/cm2, 0.72 A/W and 5.05 × 1014 Jones, respectively without a BSF layer. After insertion of the BSF layer, the performance of the CCTSe PD is significantly upgraded because of the production of high built-in potential which rises the magnitude of VOC from 0.76 V to 0.84 V. For this reason, the responsivity and detectivity of CCTSe PD are also grows with the value of 0.84 A/W and 2.32 × 1015 Jones, respectively that indicate its future potential.

Impact of using dual back surface field layers of different materials on GaAs single junction solar cell performance

This research aspires to investigate the impact of employing dual BSF layers on the performance of single junction GaAs solar cells using the Silvaco TCAD simulator. A layer of GaAs, InGaP, and InAlGaP has been implemented as a second BSF layer on top of the original BSF layer of the n-InGaP/n-GaAs/p-GaAs/p-InAlGaP structured solar cell. The results show that using GaAs as a second BSF layer has increased the carrier’s recombination and degraded the cell efficiency due to its lower energy bandgap, which creates a potential well that lessens the number of photogenerated carriers flowing through the conduction band toward electrodes. However, adding InGaP and InAlGaP as a second BSF layer decreases the recombination rate and generates a broad electric field region leading to extra photogenerated carriers drifting through the cell, which increases the efficiency from 29.42% to 29.81% for the case of using InGaP and 30.33% for the case of using InAlGaP. Furthermore, increasing the thickness and doping of the second BSF layer reduces the carriers’ recombination at the boundaries of this layer, which implies efficiency enhancement.

Investigation of Back Surface Field Layer for High Efficiency Ultrathin In2S3 based CIGS Solar Cell

AbstractA comprehensive study of a novel structure for In2S3 based CIGS solar cell has been observed. The effects of the absorber layer and temperature with various back surface field (BSF) layers (SnS/SnTe/MoTe2/GeTe) are analyzed with the SCAPS‐1D simulator. Performances of the ultrathin CIGS solar cell enhanced with the proposed structure of ZnO:Al/i‐ZnO/In2S3/CIGS/BSF/Mo and efficiency reached over 24% with 1000 nm CIGS absorber layer. The cell with SnS BSF layer has obtained 24.41% efficiency but shows less stability with temperature variation. On the other hand, the cell with MoTe2 BSF shows better stability at a higher temperature and reached an efficiency of 24.14%. Besides, the cell with SnTe BSF also suitable for ultrathin In2S3/CIGS, which results in an efficiency of 23.27%. However, the cell with GeTe BSF can give just over 18% efficiency, but it shows greater stability with temperature changes. This study highlights the potential of BSF layer in In2S3/CIGS solar cell enhancing the performance and stability of cells by reducing recombination losses. The incorporation of a 50 nm BSF layer allows further thinning of the absorber layer, reducing material consumption in the fabrication process without sacrificing overall efficiency.

Numerical Expedition on the Potential of AgBiS2-Based Thin Film Solar Cells Employing Different Carrier Transport Layers.

In this study, a photovoltaic (PV) device has been developed by using AgBiS2 as the key material. The simulation of the photovoltaic cell has been performed using the SCAPS-1D simulator to analyze the impact of each layer. The design incorporates three window layers, CdS, In2S3, and ZnSe, alongside six familiar compounds, AlSb, CuGaSe2 (CGS), CuS, MoS2, Sb2S3, and WSe2, as the back surface field (BSF) layers. These heterostructures aim to uncover the potential of AgBiS2 in the realm of photovoltaic technology. When AgBiS2 functions within a singular heterojunction, specifically in configurations such as n-CdS/p-AgBiS2, n-In2S3/p-AgBiS2, and n-ZnSe/p-AgBiS2, the resulting values for open-circuit voltage (V OC) and the short circuit current (J SC) are found to be ∼0.90 V and ∼32 mA/cm2, respectively, while the corresponding power conversion efficiencies (PCE) are 23.56%, 22.60%, and 23.62%, respectively. On the contrary, the incorporation of various BSF layers like AlSb, CGS, CuS, MoS2, Sb2S3, and WSe2 results in a substantial increase in V OC, leading to an enhancement in PCE. Among the AgBiS2 based different dual-heterostructures, the outstanding PCE of 30.04% with a V OC of 1.12 V is achieved by n-ZnSe/p-AgBiS2/p+-Sb2S3 device. In comparison, the n-ZnSe/p-AgBiS2/p+-CGS structure exhibits a similar PCE of 30.03% with a V OC of 1.12 V. Additionally, the n-ZnSe/p-AgBiS2/p+-MoS2 arrangement demonstrates a PCE of 29.95% and a V OC of 1.12 V. The effective band alignments observed at the interfaces of ZnSe/AgBiS2 and AgBiS2/MoS2, ZnSe/AgBiS2 and AgBiS2/CGS, as well as ZnSe/AgBiS2 and AgBiS2/Sb2S3 contribute to a substantial built-in potential, leading to an elevated V OC. As an alternative to ZnSe, the CdS window could offer similar performances, whereas In2S3 might provide a lower efficiency. The elaborate simulation findings highlight the substantial potential of AgBiS2 as an absorber, particularly when coupled with different windows and BSF layers. This opens avenues for experimental research focused on AgBiS2 in the era of photovoltaic cells.

Design and simulation of BeSiP2-based high-performance solar cell and photosensor

This research composition provides a novel as well as non-toxic chalcopyrite-category BeSiP2 (BSP) compound-based structure that is inspected by a solar cell capacitance simulator software (SCAPS-1D) and this structure can be used for both solar cell (SC) and photosensor (PS) industries. In this structure, indium sulphide (In2S3) and molybdenum sulphide (MoS2) are exploited as window and back surface field (BSF) layers. By arranging the BSP-based photonic (photosensor and solar cell) structure, the optimized condition of different layers has been determined. Without the MoS2 layer, the value of SC and PS performance parameters are JSC of 29.75 mA/cm2, VOC of 0.84 V, FF of 83.96 %, PCE of 20.97 %, R of 0.51 AW−1 and D* of 1.68 × 1015 Jones. But with a thin MoS2 layer, the SC and PS performance parameters of the BSP compound-based photonic gadget (PG) progress meaningfully. The progress of SC and PS parameters are JSC of 34.44 mA/cm2, VOC of 0.99 V, FF of 87.45 %, PCE of 29.83 %, R of 0.64 AW−1 and D∗ of 3.63 × 1016 Jones, separately. These findings exhibit that BSP-based structure can be used for both solar cell and photodetector devices, which could be highly efficient and cost-effective fabrication in photonic industries.