Precise determinations of the variation in Al concentration in β‐sialon grains of the garnet and cordierite sialon systems were made by means of quantitative energy‐dispersive X‐ray analysis in an analytical electron microscope. Different signs of the concentration gradients in the grain indicate differences in secondary crystallization mechanisms, while Al distributions with respect to grain size indicate a changing glass‐silicon nitride compatability during crystallization. The technique was also applied to the glassy grain‐boundary phase allowing the determination of the glass‐forming region of the cor‐dierite‐sialon system. A detailed evaluation of errors in analytical transmission electron microscopy (AEM) is described.
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