Transparent conducting B-doped ZnO thin films were deposited on normal soda-lime glass substrate by pulsed DC magnetron sputtering from homemade Zn1−x B x O ceramic targets. All the Zn1−x B x O targets are single-phase hexagonal wurtzite structure. After introducing B dopant into ZnO, the targets have a slight c-axis orientation and show more compact than the undoped target. The effect of B doping concentration on the crystallization behaviors, morphological, electrical, and optical properties of the Zn1−x B x O films was systematically investigated. XRD patterns reveal that both the B-doped and undoped films exhibit hexagonal wurtzite structure with strong c-axis orientation. With increasing the B doping concentration, the c-axis orientation and the calculated grain size of the Zn1−x B x O films based on the XRD data decrease. The surface morphologies of the films are very flat, and the transmittance spectra of the films show mean values higher than 90% in the visible range. The B-doped ZnO film with the lowest resistivity of 2.1 × 10−3 Ω cm was achieved by sputtering the Zn0.99B0.01O ceramic target.