Avalanche Transit Time Diode Research Articles

Potentiality of graphene as a base material for impact ionization avalanche transit time diode in high-frequency applications

In this paper, the microwave application potential of graphene is studied using a double-drift-region (DDR) impact ionization avalanche transit time (IMPATT) diode. The simulation of this diode is carried out for the very first time at several different atmospheric window frequencies. Because graphene has unique and special properties, it could be used to make electronic gadgets for the next generation. The device is simulated at a variety of millimeter and sub-millimeter wave frequencies using a model called self-consistent drift diffusion (SCDD), which was developed by the author based on current continuity, Poisson’s equation and space charge equation. When compared to traditional IMPATT devices such as Si, GaAs, InP and GaP, the results demonstrate superior performance in terms of efficiency, and RF power across a wide range of operating conditions. Again, the behavior of noise in graphene IMPATT is studied, and it is found that it makes less noise than Si and GaAs IMPATT. The simulation results open up new avenues for IMPATT diode manufacture and design.

Direct observation of radio-frequency negative differential resistance in GaN-based single drift region IMPATT diodes

We report the direct observation of radio-frequency negative differential resistance, via on-wafer S-parameter measurements, in GaN-based impact ionization avalanche transit time (IMPATT) diodes. Clear signatures of reflection gain are observed from 18.7 to 30.6 GHz. These observations have been made possible by suppressing the reverse leakage current (and thereby parasitic shunt conductance) by optimization of the fabrication process, in conjunction with the use of pulsed measurements to suppress device self-heating. Consistent with avalanche-dominated behavior, the measured DC reverse bias current–voltage measurements show a positive temperature coefficient of breakdown. For the high-frequency on-wafer characterization, pulsed-bias S-parameter measurements with low (0.0067%) duty cycle were used to mitigate thermal effects. The measured avalanche frequency aligns closely with theoretical predictions based on Gilden and Hines' small signal model [Gilden and Hines, IEEE Trans. Electron Devices ED-13(1), 169–175 (1966)], measured impact ionization coefficients [Cao et al., Appl. Phys. Lett. 112(26), 262103 (2018)], and experimental saturation velocity measurements [Bajaj et al., Appl. Phys. Lett. 107(15), 153504 (2015)]; this excellent agreement confirms IMPATT operation and provides insights needed to further optimize device performance.

The latest developments of microwave diagnostics for high temperature plasma in ELVA-1 company

For nearly 30 years, we have been designing and supplying instruments for microwave diagnostics of high temperature plasma. This report provides a description of the mm-wave components we utilize to make diagnostics within the frequency range of 26–330 GHz. While most of these components are standard and readily available on the market, we have also developed a few specific devices that simplify the architecture of our instruments. The article includes descriptions of these devices: Backward Wave Oscillators (BWO), Impact Ionization Avalanche Transit-Time diode (IMPATT) sources, IMPATT Active Frequency Multipliers (AFM), Noise Sources, and Electronically Controlled Attenuators. Furthermore, we offer an overview of the microwave plasma diagnostics we have supplied, including ECE radiometers operating at 50–220 GHz, as well as heterodyne interferometers operating at fixed frequency 94 GHz, 140 GHz, or 300 GHz. We also discuss methods employed to ensure measurement stability and present the achieved results. The advent of the new era of modern Monolithic Microwave Integrated Circuit (MMIC) based devices has brought forth exciting possibilities. As an example, we discuss the upgrade of the low noise receiver for the Collective Thomson Scattering (CTS) diagnostic at Wendelstein 7-X, which enables ion temperature measurements in the plasma core [1]. Lastly, we provide a list of MMIC-based devices that are currently available and have garnered the attention of the plasma diagnostics community.

Junction Diameter Dependence of Oscillation Frequency of GaN IMPATT Diode Up to 21 GHz

An experimental study on the effects of junction capacitance and current density on the oscillation characteristics of GaN single-drift-region (SDR) impact ionization avalanche transit-time (IMPATT) diodes were carried out using GaN p+-n abrupt junction diodes of various diameters, 200, 150, and 100 μm, with a depletion layer width of 2 μm. The fabricated diodes showed a clear avalanche breakdown at 315 V and a pulsed microwave oscillation with a peak output power exceeding 30 dBm. The oscillation frequency depended on junction diameter and current density. It was widely modulated from 8.56 to 21.1 GHz with decreasing junction diameter and increasing current density. The highest oscillation frequency was obtained with a current density of 13.8 kA/cm2 and a junction diameter of 100 μm. A numerical calculation based on Read-type small-signal theory was carried out and found to well explain the experimental results.

Simulation on different orientation hexagonal SiC-based hetero-polytype IMPATT terahertz diodes

SiC hetero-polytypes that could be fabricated by chemical vapor deposition etc. methods can be employed to design the power devices. Herein, the 〈0 0 0 1〉(〈1 1 2¯ 0〉)4H(6H)-SiC-based hetero-polytypes are adopted to construct the n+/n/i/p/p+-type impact ionization avalanche transit time diodes (IMPATTDs) and mixed tunneling avalanche transit time diodes (MITATTDs). The DC, large-signal and noise performance of the proposed diodes operating at 0.85 THz are numerically simulated based on the fundamental equations for semiconductor devices. The results indicate that, the diodes with 〈0 0 0 1〉4H(6H)-SiC in each of the i-type, n-type and p-type regions can render higher break-down voltage and conversion efficiency while lower quality factor comparing to those with 〈1 1 2¯ 0〉4H(6H)-SiC in the three regions, the latter devices involve lower noise. The diodes contained 3C-SiC show lower break-down voltage and quality factor while higher noise than those without 3C-SiC. Little difference of DC, large-signal and noise properties between IMPATTDs and MITATTDs is implied due to very weak tunneling through thick intrinsic-region. The present diodes show higher conversion efficiency comparing to the n+/n/p/p+-type devices. In addition, the fabricating feasibility of the proposed devices is discussed. This paper can guide to design the reasonable structures by using suitable anisotropic semiconductors to achieve high-performance devices.

High electron mobility effect in band-engineered GaN/quasi-AlGaN based exotic avalanche transit time diode arrays: application as ultra fast THz switches

High electron mobility effect in band-engineered GaN/quasi-AlGaN based exotic avalanche transit time diode arrays: application as ultra fast THz switches

Nonlinear Carrier Dynamics in a Single Photon Avalanche Diode: Stability, Bifurcation, and Quenching Condition

Nonlinear carrier dynamics during quenching of a single photon avalanche diode (SPAD) are investigated. A Lienard type differential equation is derived from carrier continuity equations and it is solved analytically and numerically. Universal characteristics of the quenching carrier dynamics, i.e., stability, bifurcation, and quenching conditions, are analyzed on a trace-determinant plane of the Jacobian matrix and on a phase plane as functions of the quenching resistance (QR). With a finite QR or a resistive quenching (RQ), the breakdown voltage is found to be an attractor leading to a nonquenched final state. In order to produce a successful quenching, i.e., a status identified as an unstable fixed point (FP) with a zero-carrier state, two conditions are found to be necessary: 1) bias voltage dropping below breakdown voltage to ensure carrier decrease and 2) carrier extinction (CE) in this carrier decreasing period. The two conditions together lead to a threshold of QR. On the other hand, a capacitive quenching (CQ) appearing as a special case of RQ with an infinite resistance is found to show a completely different bifurcation character. CQ is derived to be equivalent to a logistic equation giving a transcritical bifurcation at the breakdown voltage and a final state identified as a stable FP with natural CE. Finally, two time constants both governed by an excess voltage are derived. In particular, one of them, a lifetime of impact ionizations, is found to be equivalent to the ``avalanche frequency'' of an impact ionization avalanche transit-time diode (IMPATT).

Investigation of Dielectric Resonator Oscillator Using High-Electron Mobility Transistor at 26GHz for Space Applications

An oscillator is a vital component as the energy source in microwave telecommunication system. Microwave oscillators designed using Gunn diode have poor DC to RF efficiency. IMPact Ionization Avalanche Transit-Time diode (IMPATT) oscillators have the drawback of poor noise performance. The transistorized oscillators have a limitation to the maximum oscillation frequency which means that they cannot be used for oscillators designed for high frequencies. To design negative series feedback Dielectric Resonator Oscillator (DRO), the resonant unit uses a dielectric resonator (DR) since it is small in size, light in weight, has high-Quality ([Formula: see text]) factor, better stability and also it is inexpensive. It has the benefits of low-phase noise, low cost, miniaturization, high stability, applicable for devices designed at high frequencies and had already been widely applied, so the research on microwave dielectric oscillator has also been one of the focus of today’s microwave integrated circuits. DRO is widely used in electronic warfare, missile, radar and communication systems. The DRO incorporates High-Electron Mobility Transistor (HEMT) as an active device since it offers higher power-added efficiency combined with excellent low-noise figures and performance. The entire circuit of DRO using HEMT at 26[Formula: see text]GHz is designed using Agilent Advanced Design System (ADS) software. In this, DRO different measurements of parameters are done such as output power which is typically [Formula: see text][Formula: see text]dBm for 26[Formula: see text]GHz DRO, phase noise at 10[Formula: see text]kHz offset for 26[Formula: see text]GHz DRO it is 80[Formula: see text]dBc/Hz. The frequency pushing and frequency pulling for 26[Formula: see text]GHz DRO its typical values are 30[Formula: see text]kHz/V and 1[Formula: see text]MHz, respectively.

Study of p-SiC/n-GaN Hetero-Structural Double-Drift Region IMPATT Diode.

Nowadays, the immature p-GaN processes cannot meet the manufacturing requirements of GaN impact ionization avalanche transit time (IMPATT) diodes. Against this backdrop, the performance of wide-bandgap p-SiC/n-GaN heterojunction double-drift region (DDR) IMPATT diode is investigated in this paper for the first time. The direct-current (DC) steady-state, small-signal and large-signal characteristics are numerically simulated. The results show that compared with the conventional GaN single-drift region (SDR) IMPATT diode, the performance of the p-SiC/n-GaN DDR IMPATT proposed in this design, such as breakdown voltage, negative conductance, voltage modulation factor, radio frequency (RF) power and DC-RF conversion efficiency have been significantly improved. At the same time, the structure proposed in this design has a larger frequency bandwidth. Due to its greater potential in the RF power density, which is 1.97 MW/cm2 in this study, indicates that the p-SiC/n-GaN heterojunction provides new possibilities for the design and manufacture of IMPATT diode.

반도체 전자소자 기반 테라헤르츠 신호원

Terahertz (THz) signal sources are important elements that are used in THz systems and have been gaining interest in recent times. THz signal sources can be realized using either optical devices or electronic devices. The latter approach can be divided into signal sources based on vacuum devices and solid-state devices. This paper provides an overview of THz sources that use semiconductor electronic devices, which are a typical kind of the solid-state devices. First, the operational principles and recent performance trends of diode-based THz signal sources, such as Gunn diodes, impact ionization avalanche transit-time (IMPATT) diodes, and resonant tunneling diodes (RTDs), are provided. Next, three types of transistor circuit-based THz signal sources, namely, LC cross-coupled oscillators, Colpitts oscillators, and ring oscillators, are described according to their topologies and performance. Finally, various types of 300 GHz and 600 GHz oscillators are introduced as representative examples of transistor circuit-based signal sources.

Influence of SiC hetero-polytype barriers on the performance of IMPATT terahertz diodes

The SiC hetero-polytypes with perfect interfaces and no diffusion pollution are adopted to innovatively design the impact ionization avalanche transit-time (IMPATT) diodes. The performance of DC, large-signal and noise of the proposed diodes operating at the atmospheric low-loss window frequency 0.85 THz are estimated via numerically solving the fundamental device equations with and without quantum correction incorporated the tunnel and density-gradient of carriers. The influence from SiC hetero-polytype barriers and material properties on the performance of IMPATT diodes is analyzed. The advantages in power, efficiency and noise generating in the diodes of 4H/6H–SiC hetero-polytypes can be due to high critical breakdown electric field strength and weak ionizing in 4H–SiC and 6H–SiC. However, small power and heavy noise emerging from the devices of 3C/4H–SiC and 3C/6H–SiC hetero-polytypes can be owing to low critical breakdown electric field strength and strong ionizing in 3C–SiC. The noise electric field peaks arising from the strong ionizing layers while deviating from the interfaces in hetero-polytypes are illustrated. The evident quantum effect on the diodes without 3C–SiC while the slight effect on the devices included 3C–SiC are attributed to low-barriers embedded in the former diodes while high-barriers involved in the latter devices, respectively. • The SiC hetero-polytypes are employed to design the impact ionization avalanche transit-time diodes (IMPATTDs). • The 4H/6H-SiC hetero-polytype IMPATTDs imply advantages in power, efficiency and noise due to weak ionizing in materials. • The noise electric field peaks arise from the strong ionizing layers while deviate from the in hetero-interfaces. • The IMPATTDs with 3C/4H-SiC and 3C/6H-SiC hetero-polytype high-barriers encounter weak quantum effect.

Синхронизация генераторов на ЛПД импульсного и непрерывного действия в мм-диапазоне длин волн. Часть 1. Конструкции генераторов и обобщенная модель их синхронизации внешним сигналом

Advances in the development of ultrahigh-frequency semiconductor electronics open wide opportunities for developing optimal schemes and designs of microwave power sources in the millimeter wavelength range providing high stability of the frequency and electromagnetic oscillation phase. Synchronized diode generators used in transmit/receive module for active phased array antennas, coherent low-power radar stations, etc. show great promise. The mode of external synchronization of semiconductor generators allows effectively implementing the task of creating output stages of the transmitters with high gain factor, low frequency noise and an output power level corresponding to the maximum power mode. This article presents the first of two parts of the study, which summarizes the results achieved so far in the development of synchronized oscillators based on impact ionization avalanche transit-time (IMPATT) diodes. The first part presents the electrodynamic designs of the oscillators, which are synchronized with an external source of microwave oscillations and contain a resonant oscillating system with a silicon IMPATT diode. The silicon two-drift IMPATT diode was chosen as an active element due to the fact that its use allows reaching significant levels of pulsed microwave power – an order of magnitude higher than those of the most well-known HEMT and pHEMT transistors in the millimeter wavelength range. It is shown that to reduce losses, the oscillating system should be made in the form of a radial resonator with a diode casing, which has distributed parameters. This eliminates the use of additional reactive inhomogeneities in the initial cross-section of the waveguide section of the generator. Due to the low quality factor of the resonant casing of the diode, the generalized quality factor of the microwave circuit takes the minimum value required to implement a stable generator synchronization process in the millimeter wavelength range. The second part of the work will be devoted to synchronized pulse generators with an output power of 20–150 W.

Optimal Design of Large Signal Performance of AlN/GaN Hetero-Structural IMPATT and MITATT Diodes

Hetero-structure of AlxGa1-xN/GaN exhibits important applications in high frequency and large power devices. In this paper, AlN/GaN is adopted to optimal design the large power impact avalanche transit time (IMPATT) and mixed tunneling avalanche transit time (MITATT) diodes operating at the atmospheric low loss window frequency of 0.85 THz. The static state and large signal characteristics of the devices are numerically simulated. The values of peak electric field strength, break-down voltage, avalanche voltage, the maximum generation rates of avalanche and tunneling, admittance-frequency relation, output power, conversion efficiency, quality factor of the proposed hetero-structural IMPATT and MITATT diodes are calculated, respectively. Via comparing the obtained results of (n)AlN/(p)GaN and (n)GaN/(p)AlN IMPATT diodes to those of the MITATT counterparts, there exists little performance difference between IMPATT and MITATT devices while implies significant difference between the (n)AlN/(p)GaN and (n)GaN/(p)AlN diodes.

Optimal Design of Large Signal and Noise Performance of GaN/SiC Hetero-Structural IMPATT Diodes Based on QCDD Model

Successes of GaN and SiC electronics in high frequency, large power realm indicate that, the GaN/SiC hetero-structures can be used to design the impact avalanche transit time (IMPATT) diodes operating at Terahertz range, of which holds advantages over homo-structural counterparts in lower noise and reduced tunnel current. Here, the (n)GaN/(p)SiC and (p)GaN/(n)SiC double drift region (DDR) IMPATT diodes operating at 0.85 THz are proposed based on the quantum corrected drift-diffusion (QCDD) model, the performance parameters of static state, large signal and noise properties of the studied devices such as peak electric field intensity, breakdown voltage, optimal negative conductance, output power, conversion efficiency, admittance-frequency relation, quality factor, noise electric field, mean-square noise voltage per band-width and noise measure were numerically calculated and analyzed, which can guide to optimize the GaN/SiC IMPATT diodes.

Terahertz Radiators Based on Si~3C-SiC MQW IMPATT Diodes

Aims:: The potentiality of Multiple Quantum Well (MQW) Impacts Avalanche Transit Time (IMPATT) diodes based on Si~3C-SiC heterostructures as possible terahertz radiators have been explored in this paper. Objective:: The static, high frequency and noise performance of MQW devices operating at 94, 140, and 220 GHz atmospheric window frequencies, as well as 0.30 and 0.50 THz frequency bands, have been studied in this paper. Methods: The simulation methods based on a Self-Consistent Quantum Drift-Diffusion (SCQDD) model developed by the authors have been used for the above-mentioned studies. Results: Thus the noise performance of MQW DDRs will be obviously better as compared to the flat Si DDRs operating at different mm-wave and THz frequencies. Conclusion:: Simulation results show that Si~3C-SiC MQW IMPATT sources are capable of providing considerably higher RF power output with the significantly lower noise level at both millimeter-wave (mm-wave) and terahertz (THz) frequency bands as compared to conventional flat Si IMPATT sources.

Relative Study on MM-Wave Performance of Group IV-IV and Group III-V Materials Based IMPATT Sources

A comparative study is done on Si, 4H-SiC, Wz-GaN and InP based impact avalanche transit time (IMPATT) diodes operating at 94 GHz. A double-iterative simulation procedure is utilized to investigate the DC and small-signal features of the diodes from which corresponding avalanche response times and transit times are obtained. The studies exhibit that SiC and GaN diodes are potential sources for radiating high power at 94 GHz. It is also observed that SiC and GaN diodes are highly appropriate for mm-wave frequency bands due to shorter values of their avalanche response time. The power output for SiC IMPATT source is noticed as 47.61 W and for GaN IMPATT, the same is seen as 1.96 W; corresponding avalanche response times are found to be 2.42 × 10−15 and 3.45 × 10−16 s respectively.

Microwave radiometer for sensor systems with self-contained power supplies

PurposeThis paper aims to describe a new microwave radiometer designed for sensing natural mediums to solve various applied scientific problems. The research findings enable to make assertions about high efficiency of the described microwave radiometer being a part of mobile sensor systems with self-contained power supplies.Design/methodology/approachA new microwave radiometer is based on the modification of the null method. Modification of the null method has been implemented by using two reference noise generators. The first reference noise generator is passive and its implementation is based on the matched load. A low-noise amplifier is used as the second reference noise generator. The use of the low-noise amplifier as the reference noise generator is based on the noise wave generation effect at its input whereby the waves form low-temperature noise.FindingsThe use of the low-noise amplifier as the reference noise generator in the modified microwave radiometer has made it possible to simplify the device design at the system level while reducing the weight and power consumption and increasing sensitivity.Originality/valueThe novelty of the modified radiometer lies in the modification of the null method and the removal of high-temperature reference noise generators based on avalanche transit-time diodes. Further, the novelty lies in the invariance of measurement results toward changes in the receiver’s own noise and transmission factor while the design of the device has been simplified.

Computation of quantum‐corrected noise in graphene‐SiC‐based impact avalanche transit time diode

AbstractHere, we have performed the noise analysis in graphene‐SiC‐based double drift region impact avalanche transit time diode (IMPATT). For computation, the noise model taken is based on drift diffusion with quantum corrections. Though noise computation in IMPATT with classical drift diffusion model are widely followed in earlier years, noise analysis through classical drift diffusion model is independent of confinement and tunneling due to quantum effects. Noise computed through quantum‐corrected noise model is more accurate to measured noise. Therefore, by considering quantum effects in addition to classical noise model, we have computed the noise in graphene‐SiC IMPATT. The noise performance of graphene‐SiC IMPATT is evaluated at Ka band which ranges from 26.5 to 40 GHz. The obtained noise from graphene‐SiC IMPATT is in good agreement with earlier reported noise behavior in IMPATT. We observed that the graphene‐SiC IMPATT is giving the better noise performance in terms of lower computed noise and noise spectral density as compared to other materials reported so far.

A novel model of avalanche current generation in the GaN HEMT equivalent circuit

We consider the large-signal equivalent circuit of a field-effect transistor (FET) with characteristics and parameters calculated using a two-dimensional (2D) quasi-hydrodynamic model while taking into account the electron velocity overshoot. In accordance with this equivalent circuit when applied to an AlGaN/GaN high-electron-mobility transistor (HEMT), the avalanche current (in the feedback branch) is zero at all operating points. However, this contradicts the significant difference seen between the results of time-domain simulations of a radiofrequency (RF) amplifier in which the transistor is simulated using a 2D model that does versus does not include the avalanche multiplication of the charge carriers. We propose a new model for the avalanche current generation, based on such simulations including the avalanche multiplication and on the theory of impact-ionization avalanche transit-time (IMPATT) diodes. This model allows the synthesis of amplifiers with high power-added efficiency (PAE).

Improved performance of Ni/GaN Schottky barrier impact ionization avalanche transit time diode with n-type GaN deep level defects

In this paper, the effects of n-type GaN deep level defects on the DC, small signal AC, and radio frequency (RF) characteristics of Ni/GaN Schottky barrier impact ionization avalanche transit time (IMPATT) diode are investigated. A double avalanche termination region (DATR) structural IMPATT diode is proposed to mitigate the influences caused by these deep level defects. Simulation results show that the internal electric field, carrier generation rate and carrier velocity of IMPATT diode are affected by these deep level defects. With the increase of deep level defects density, the maximum RF output power, DC-to-RF conversion efficiency and optimum frequency of the diode all show a tendency to degenerate correspondingly. Through adjusting the electric field property properly of the diode, the DATR structural IMPATT diode improves the performances of IMPATT diode. The negative peak conductance of the improved diode is 11.4 × 103 S cm−2 at 248 GHz, showing the lowest quality factor of 1.42, the improved maximum RF output power of 1.35 MW cm−2 and DC-to-RF conversion efficiency of 15.7% at 220 GHz under the same deep level defects density, these characteristics of the improved DATR structural IMPATT diode reach the level which the low deep level defects density original diode shows.