Avalanche Photodiodes Research Articles

Frontiers and challenges in silicon-based single-photon avalanche diodes and key readout circuits

Single-photon detectors enable the detection of extremely weak light with remarkable temporal precision. This capability provides crucial technological support for precise distance measurements and high-resolution imaging under low-light conditions. Silicon and silicon-based germanium single-photon detectors can operate in a wide spectrum from the visible to the near-infrared region, and exhibit fundamental advantages without needing heterogeneous integration. In recent years, there has been continuous progress in the miniaturization of silicon-based single-photon diodes and corresponding read-out circuits. The integration scheme of 3D stacking has enabled the optimization of the devices and circuits at different process nodes. This evolution has comprehensively enhanced system volumes and performances. Thus, detection systems and applications of silicon-based single-photon technology continue to expand. In this paper, we review the structural evolution, performance characterization, manufacturing processes, and analog front-end circuits of single-photon detectors based on CMOS/CIS technology and silicon-based germanium avalanche photodiodes. Additionally, we provide an overview of the critical circuits in typical application scenarios.

GHz photon-number resolving detection with high detection efficiency and low noise by ultra-narrowband interference circuits

We demonstrate the photon-number resolution (PNR) capability of a 1.25 GHz gated InGaAs single-photon avalanche photodiode (APD) that is equipped with a simple, low-distortion ultra-narrowband interference circuit for the rejection of its background capacitive response. Through discriminating the avalanche current amplitude, we are able to resolve up to four detected photons in a single detection gate with a detection efficiency as high as 45%. The PNR capability is limited by the avalanche current saturation, and can be increased to five photons at a lower detection efficiency of 34%. The PNR capability, combined with high efficiency and low noise, will find applications in quantum information processing technique based on photonic qubits.

Experimental identification of defect-induced destructive breakdown of AlGaN ultraviolet avalanche photodiodes

The issue of destructive breakdown and high dark current in AlGaN ultraviolet avalanche photodiodes has conventionally been attributed to material defects, yet direct evidence supporting this claim has been absent. Examining damaged devices that experienced destructive breakdown revealed an intriguing finding: post-treatment with a potent alkali resulted in the emergence of corrosion pits on the device’s surface. Subsequently, a dry etching process was implemented in the targeted area to eliminate the corrosion pit. Remarkably, the current–voltage measurement subsequent to this treatment showcased a complete restoration of the damaged device’s previous performance. This unequivocally indicates that the destructive breakdown was localized, and the point of punch-through could be precisely identified through the corrosion pit. Consequently, it is now firmly believed that material defects constitute the primary cause of destructive breakdown in these instances.

Separate absorption, charge, and multiplication staircase avalanche photodiodes

The wavelength 1550 nm is widely used in fiber-optic communications and imaging systems. Avalanche photodiodes (APDs) offer high sensitivity for detecting this wavelength. However, the noise caused by the stochastic nature of the impact ionization gain mechanism can temper the benefit of amplifying the signal. Here, we report a separate absorption, charge, and multiplication APD that uses a two-step staircase multiplication region exhibiting a near-unity excess noise factor. At a gain of four, the excess noise factor is approximately three times lower than conventionally used InGaAs/InP separate absorption, charge, and multiplication APDs. This improved excess noise coupled with 1550-nm operation offers the potential for enhanced performance in several key application areas.

Development of a near-infrared single-photon 3D imaging LiDAR based on 64×64 InGaAs/InP array detector and Risley-prism scanner.

A near-infrared single-photon lidar system, equipped with a 64×64 resolution array and a Risley prism scanner, has been engineered for daytime long-range and high-resolution 3D imaging. The system's detector, leveraging Geiger-mode InGaAs/InP avalanche photodiode technology, attains a single-photon detection efficiency of over 15% at the lidar's 1064 nm wavelength. This efficiency, in tandem with a narrow pulsed laser that boasts a single-pulse energy of 0.5 mJ, facilitates 3D imaging capabilities for distances reaching approximately 6 kilometers. The Risley scanner, composing two counter-rotating wedge prisms, is designed to perform scanning measurements across a 6-degree circular field-of-view. Precision calibration of the scanning angle and the beam's absolute direction was achieved using a precision dual-axis turntable and a collimator, culminating in 3D imaging with an exceptional scanning resolution of 28 arcseconds. Additionally, this work has developed a novel spatial domain local statistical filtering framework, specifically designed to separate daytime background noise photons from the signal photons, enhancing the system's imaging efficacy in varied lighting conditions. This paper showcases the advantages of array-based single-photon lidar image-side scanning technology in simultaneously achieving high resolution, a wide field-of-view, and extended detection range.

Leveraging InGaN solar cells for visible light communication reception

AbstractSolar cells are increasingly being utilised for both energy harvesting and reception in free‐space optical (FSO) communication networks. The authors focus on the implementation of a mid‐band p‐In0.01Ga0.99 N/p‐In0.5Ga0.5 N/n‐In0.5Ga0.5 N (PPN) solar cell, boasting an impressive 26.36% conversion efficiency (under 1.5AM conditions) as a receiver within an indoor FSO communication network. Employing a solar cell with dimensions of 1 mm in length and width, the FSO system underwent simulation using Optisystm software, while the solar cell's behaviour was simulated using SCAPS‐1D. The received power from the solar cell was then compared to that of four commercially available avalanche photodiode (APD) receivers. Exploring incident wavelengths spanning 400–700 nm within the visible spectrum, across transmission distances of 5, 10, 15, and 20 m, the study presented current‐voltage (IV) and power‐voltage curves. Notably, the InGaN solar cell exhibited superior electrical power output compared to all commercial APDs. In conclusion, the findings underscore that augmenting received power has the potential to enhance FSO network quality and support extended transmission distances.

Investigation of HgCdTe avalanche photodiodes for HOT condition

The performance of long-wave infrared (LWIR) x = 0.22 HgCdTe avalanche photodiodes (APDs) was presented. The dark current-voltage characteristics at temperatures 200 K, 230 K, and 300 K were measured and numerically simulated. Theoretical modeling was performed by the numerical Apsys platform (Crosslight). The effects of the tunneling currents and impact ionization in HgCdTe APDs were calculated. Dark currents exhibit peculiar features which were observed experimentally. The proper agreement between the theoretical and experimental characteristics allowed to determine the material parameters of the absorber was reached. The effect of the multiplication layer profile on the detector characteristics was observed but was found to be insignificant.

Spatiotemporal Visualization of Photogenerated Carriers on an Avalanche Photodiode Surface Using Ultrafast Scanning Electron Microscopy

The spatiotemporal evolution of photogenerated charge carriers on surfaces and at interfaces of photoactive materials is an important issue for understanding fundamental physical processes in optoelectronic devices and advanced materials. Conventional optical probe-based microscopes that provide indirect information about the dynamic behavior of photogenerated carriers are inherently limited by their poor spatial resolution and large penetration depth. Herein, we develop an ultrafast scanning electron microscope (USEM) with a planar emitter. The photoelectrons per pulse in this USEM can be two orders of magnitude higher than that of a tip emitter, allowing the capture of high-resolution spatiotemporal images. We used the contrast change of the USEM to examine the dynamic nature of surface carriers in an InGaAs/InP avalanche photodiode (APD) after femtosecond laser excitation. It was observed that the photogenerated carriers showed notable longitudinal drift, lateral diffusion, and carrier recombination associated with the presence of photovoltaic potential at the surface. This work demonstrates an in situ multiphysics USEM platform with the capability to stroboscopically record carrier dynamics in space and time.

On-beam system test of the new readout electronics for the CMS Electromagnetic Calorimeter upgrade

Starting in 2029, the High Luminosity LHC (HL-LHC) at CERN is projected to achieve unparalleled instantaneous luminosity (7.5 × 1034 cm-2s-1) for an integrated luminosities of 4500 fb-1. To cope with the extreme conditions of 200 collisions per bunch crossing (pile-up), both on-detector and off-detector electronics of the CMS Electromagnetic Calorimeter (ECAL) will be upgraded. The new system will incorporate a dual-gain trans-impedance amplifier alongside an Application-Specific Integrated Circuit (ASIC) that includes dual 160 MHz ADC channels and features for gain selection and data compression. The lead tungstate crystals and avalanche photodiodes (APDs) will remain in service due to their proven reliability. To counteract the noise amplification in the APDs, attributed to radiation-induced dark currents, the operational temperature of the ECAL will be reduced from 18°C to roughly 9°C. Preliminary tests of these new electronics have yielded promising results. During tests beams at the CERN H4 beamline using an electron beam, the new electronics met both required energy resolution and linearity and achieved a timing resolution of 30 ps for energies above 50 GeV.

Axial Growth Characteristics of Optically Active InGaAs Nanowire Heterostructures for Integrated Nanophotonic Devices.

III-V semiconductor nanowire (NW) heterostructures with axial InGaAs active regions hold large potential for diverse on-chip device applications, including site-selectively integrated quantum light sources, NW lasers with high material gain, as well as resonant tunneling diodes and avalanche photodiodes. Despite various promising efforts toward high-quality single or multiple axial InGaAs heterostacks using noncatalytic growth mechanisms, the important roles of facet-dependent shape evolution, crystal defects, and the applicability to more universal growth schemes have remained elusive. Here, we report the growth of optically active InGaAs axial NW heterostructures via completely catalyst-free, selective-area molecular beam epitaxy directly on silicon (Si) using GaAs(Sb) NW arrays as tunable, high-uniformity growth templates and highlight fundamental relationships between structural, morphological, and optical properties of the InGaAs region. Structural, compositional, and 3D-tomographic characterizations affirm the desired directional growth along the NW axis with no radial growth observed. Clearly distinct luminescence from the InGaAs active region is demonstrated, where tunable array-geometry parameters and In content up to 20% are further investigated. Based on the underlying twin-induced growth mode, we further describe the facet-dependent shape and interface evolution of the InGaAs segment and its direct correlation with emission energy.

Novel sensor developments for photon science at the MPG semiconductor laboratory

The world of photon science experiences significant advancements since the advent of synchrotron light sources with unprecedented brilliance, intensity and pulse repetition rates, with large implications on the detectors used for instrumentation. Here, an overview about the work on this field carried out at the semiconductor laboratory of the Max-Planck-Society (MPG HLL) is given. Main challenges are high dynamic range to resolve faint features at the fringes of scatter images as well as structures in bright peaks, and high bandwidth to fully exploit the fast timing capability of the source. A newly developed device to improve the signal-to-noise-ratio (SNR) at high bandwidths is the so-called MARTHA (Monolithic Array of Reach-Through Avalanche Photodiodes) structure, which integrates an array of APDs on a monolithic substrate. The reach-through architecture assures near 100% fill factor and allows implementing a thin entrance window with optimized quantum efficiency for low energy X-rays. The structures operate in proportional mode with adjustable gain, and can serve as a drop-in replacement for PAD detectors in hybrid pixel systems. A more sophisticated solution for low to medium frame rate applications with high contrast requirement are pnCCDs with high dynamic range in the pixel area featuring DEPFET based readout nodes with non-linear amplification (NLA). The high dynamic range mode has been demonstrated for pnCCD devices with a pixel size down to 75 μm2. Framerates of up to 1 kHz are possible for a 1 Megapixel detector. Small size prototypes of these structures have recently been manufactured. Modified DEPFET structures with build-in non-linear amplification are also used to implement active pixel detectors optimized for high dynamic range. Successfully prototyped for the DSSC sensors (DEPFET Sensor with Signal Compression) at the XFEL, these structures are increasingly being used in applications requiring high contrast and intensity, e.g., TEM imaging. Charge handling capability and output characteristics can be tailored to the requirements, as well as pixel geometry and size. The large intrinsic gain of the DEPFET provides excellent SNR even at fast timing. Pixels can be read with a speed of 100 ns, the resulting frame rate depends on the degree of readout parallelization.

Low-Energy Ion Implantation and Deep-Mesa Si-Avalanche Photodiodes with Improved Fabrication Process.

Since the avalanche phenomenon was first found in bulk materials, avalanche photodiodes (APDs) have been exclusively investigated. Among the many devices that have been developed, silicon APDs stand out because of their low cost, performance stability, and compatibility with CMOS. However, the increasing industrial needs pose challenges for the fabrication cycle time and fabrication cost. In this work, we proposed an improved fabrication process for ultra-deep mesa-structured silicon APDs for photodetection in the visible and near-infrared wavelengths with improved performance and reduced costs. The improved process reduced the complexity through significantly reduced photolithography steps, e.g., half of the steps of the existing process. Additionally, single ion implantation was performed under low energy (lower than 30 keV) to further reduce the fabrication costs. Based on the improved ultra-concise process, a deep-mesa silicon APD with a 140 V breakdown voltage was obtained. The device exhibited a low capacitance of 500 fF, the measured rise time was 2.7 ns, and the reverse bias voltage was 55 V. Moreover, a high responsivity of 103 A/W@870 nm at 120 V was achieved, as well as a low dark current of 1 nA at punch-through voltage and a maximum gain exceeding 1000.

Blue-light-enhanced avalanche photodiode with amulti-finger grating structure for fluorescence detection.

The responsiveness of the photodetectors is critical to the accuracy of the fluorescent fiber optical temperature sensor. However, the current gain and signal-to-noise ratio (SNR) of traditional photodiodes (PDs) is low, which makes it difficult to meet the high-precision detection requirements of the system. In response to the above problems, this paper achieves a novel, to the best of our knowledge, multi-finger grating (MFG) avalanche photodiode (APD). The device combines the polysilicon gate and the space charge region formed by P+/N-Well to detect photon signals. The conversion capability of the photodetector can be significantly enhanced by the MFG structure. The principle of the device is simulated and verified by technology-computer-aided design (TCAD). The standard grating APD (SG-APD), 2-finger grating APD (2FG-APD), 3-finger grating APD (3FG-APD), and 4-finger grating APD (4FG-APD) are fabricated based on 0.18µm CMOS process. The optoelectronic detection characteristics of these devices are analyzed by establishing an optoelectronic test platform. At 480nm, the responsivity of 2FG-APD, 3FG-APD, and 4FG-APD increases by 79.3%, 96.9%, and 70.2%, respectively, compared to SG-APD (4.021A/W). The test results indicate that 3FG-APD exhibits a strong photon response in the blue light range. The device has broad application prospects in the field of fluorescence detection.

Recent progress of innovative infrared avalanche photodetectors

Currently, the development trend of infrared detection systems is oriented towards achieving smaller size, reduced weight, lower power consumption, decreased cost, and heightened performance, collectively referred to as SWAP3. In this context, a rapid evolution is witnessed in the realm of next-generation high-sensitivity infrared avalanche photodiodes (APD). In recent years, the increasing demands for detector performance from astronomical, remote sensing, and civilian applications have presented novel challenges for the mechanistic exploration and device design of traditional avalanche photodetectors. This review explores the forefront of infrared APD technology, focusing on the remarkable progress achieved through the utilization of II-VI and III-V semiconductor families and the exploration based on novel low-dimensional materials. The review provides a detailed analysis of the unique properties and performance enhancements exhibited by APDs based on these material systems, shedding light on their potential for revolutionizing infrared sensing and imaging applications, and inspiring further innovation and exploration in the field of infrared photodetection.

Theoretical study of back-to-back avalanche photodiodes for dual-band infrared applications

Theoretical study of back-to-back avalanche photodiodes for dual-band infrared applications

Thinning of Cascaded Multiplication Layers in Avalanche Photodiodes for High-Speed and High-Power-Tolerant Performance

Thinning of Cascaded Multiplication Layers in Avalanche Photodiodes for High-Speed and High-Power-Tolerant Performance

Modeling and design of GeSn avalanche photodiodes with high tin content for applications at 3.3 μm

Modeling and design of GeSn avalanche photodiodes with high tin content for applications at 3.3 μm

Red-Emitting Cs2NaScCl6:Sm Flexible Films for High-Resolution X-Ray Imaging

In recent years, the development of new scintillation materials with red and near-infrared light emission has significant advantages based on the development of an avalanche photodiode with high quantum yield....

Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection

Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection

Tissue Oxygenation in Individuals with Spinal Cord Injury: A Pilot Study.

Pressure injuries (PI) are debilitating tissue lesions characterised by slow healing and a high risk of severe infection. These injuries result from continued tissue hypoxia, or low tissue oxygen saturation (StO2), which is a consequence of impaired blood circulation caused by continued pressure against tissue. PI result in significant suffering and a substantial financial burden. Therefore, we aim to develop an effective preventive measure. Persons with spinal cord injury (SCI) are at a high risk for PI due to their impaired mobility and lack of sensation to alert them to danger. The aim was to test the feasibility of an alert system based on StO2 monitoring in persons with SCI using a novel textile-based near-infrared spectroscopy (NIRS) sensor.Sensors consisted of two emission and two detection points, each point comprising eight fibres each with three light-coupling bends. Textile integration of fibres was achieved by stitching on a mass-production stitching machine. Emission fibres were connected to LEDs of 740 nm and 810 nm. Detection fibres were connected to avalanche photodiodes. Sensors were attached to the skin in the high-PI-risk buttocks area covering the bony prominences of the ischial tuberosity. StO2 was measured in three healthy subjects and two subjects with SCI during repeated sitting and pressure recovery phases.Our experiments showed decreases in StO2 in both groups during sitting phases: during low-pressure sitting phases, StO2 decreased on average -0.32%/min in the healthy subjects and at -1.24%/min in the SCI subjects. During high-pressure sitting, these rates increased to -1.16%/min for the healthy subjects and -2.16%/min for the SCI subjects. During recovery phases, StO2 returned towards normal values, but did not always reach the initial baseline. No discomfort or skin irritation was observed.These first measurements show physiologically reasonable StO2 values and demonstrate sufficient comfort while sitting on a sensor with no skin irritation or other adverse effects of sitting on the sensor for over 30 min. The nurses involved were satisfied with the easy-of-use, materials used, and patient safety demonstrated during the study. These results show that it is feasible to develop an alert system for PI prevention using a safe, wearable, textile-based NIRS sensor.