Atomic Concentration Ratio Research Articles

Dual ion beam grown silicon carbide thin films: Variation of refractive index and bandgap with film thickness

Amorphous SiC thin films on a silicon substrate (Si) with different film thicknesses (about 20–450 nm) were deposited using dual ion beam sputtering deposition (DIBSD) at room temperature. These SiC thin films were of high quality showing high coverage (>90%) and low surface and interface roughness (<5 Å). The structure and morphology of these SiC/Si systems were explored by x-ray reflectivity, x-ray diffraction, scanning electron microscopy, and atomic force microscopy. The bonding configuration and compositional details of the SiC films were examined by Fourier-transform infrared and Raman spectroscopy. The optical constants (complex dielectric function and refractive index) and the bandgap of SiC thin films were analyzed through spectroscopic ellipsometry in the 0.55–6.3 eV energy range. An increase in the bandgap (5.15–5.59 eV) and a corresponding decrease in the refractive index (2.97–2.77) were noticed with the increase of SiC film thickness from about 20–450 nm. This thickness dependent trend in optical properties is attributed to the increase of the C to Si atomic concentration ratio in DIBSD grown SiC thin films with increasing film thickness, as observed from energy dispersive x-ray analysis measurements. The unique properties of amorphous SiC have already placed it as a suitable candidate for solar cells and photovoltaic applications in its thin film form. The results developed in this study for thickness dependent optical properties of SiC thin films can be used for further optimizing the performance of SiC in various applications through tuning of optical properties.

Ni(II) doped FeOOH 2D nanocrystals, synthesized by Successive Ionic Layer Deposition, and their electrocatalytic properties during oxygen evolution reaction upon water splitting in the alkaline medium

Nanolayers of Ni(II) doped FeOOH 2D nanocrystals were for the first time synthesized on the surface of nickel foam and single crystalline silicon wafer through Successive Ionic Layer Deposition (SILD) method by using an aqueous solution of Fe(NH4)2(SO4)2 with the equilibrium pH value, as well as the solution containing Ni(NO3)2 and NH4NO3 with pH = 9.5 reached by addition of ammonia. The obtained nanolayers were investigated by SEM, HRTEM, TEM, EDX, XRD, XPS and FTIR spectroscopy. They were stated to be formed by Ni:FeOOH 2D nanocrystals with lepidocrocite and goethite crystal structures having the morphology of nanosheets. They are 2–5 nm thick with planar dimensions of about 30–50 nm and the ratio of atomic concentrations of Ni to Fe is 25%. The nanolayers were shown to exhibit electrocatalytic properties during the oxygen evolution reaction upon water splitting in the alkaline medium. For the first time it was shown that the overpotential value can be precisely set by varying the number of SILD cycles these properties can be changed precisely. For a number of samples, synthesized after 20–80 SILD cycles, it was found for a current density of 10 mA/cm2 the lowest overpotential value of 239 mV was obtained for the sample synthesized after 60 SILD cycles. The synthesis of a wide range of electrocatalytic nanolayers by SILD with the precise structural and chemical characteristics was suggested.

Эволюция физико-химических свойств поверхности GaSb(100) в растворах сульфида аммония

AbstractVarious conditions of passivation of the GaSb(100) surface by ammonium sulfide ((NH_4)_2S) solutions depending on the solution concentration, solvent, and treatment time are investigated by X-ray photoelectron spectroscopy and atomic-force microscopy. It is shown that treatment of the GaSb(100) surface by any (NH_4)_2S solution leads to removal of the native oxide layer from the semiconductor surface and the formation of a passivating layer consisting of various gallium and antimony sulfides and oxides. The surface with the lowest roughness (RMS = 0.85 nm) is formed after semiconductor treatment with 4% aqueous ammonium sulfide solution for 30 min. Herewith, the atomic concentration ratio Ga/Sb at the surface is ~2. It is also found that aqueous ammonium sulfide solutions do not react with elemental antimony incorporated into the native-oxide layer. The latter causes a leakage current and Fermi-level pinning at the GaSb(100) surface. However, a 4% (NH_4)_2S solution in isopropanol removes elemental antimony almost completely; herewith, the semiconductor surface remains stoichiometric if a treatment duration is up to 13 min.

Structure of Hf0.9La0.1O2 Ferroelectric Films Obtained by the Atomic Layer Deposition

Thin films of La-doped hafnium oxide synthesized by plasma-enhanced atomic layer deposition with subsequent rapid annealing have been studied. It has been found that the films under study have an orthorhombic noncentrosymmetric structure with the space group Pmn21. It has been shown that these films have ferroelectric properties. The ratio of atomic concentrations of elements in a film has been determined. It has been found that the film consists of the mixture of the HfO2 and La2O3 phases. It has been shown that argon ion etching results in the generation of oxygen vacancies with a concentration of about 1 at % in the surface region of the films. Vacancies are formed primarily through the knock-out of oxygen atoms to interstitial positions with the formation of a Frenkel pair.

Atomic Layer Deposition of Y2O3 Using Tris(butylcyclopentadienyl)yttrium and Water

In this work, atomic-layer deposition (ALD) of yttrium oxide (Y2O3) was demonstrated using tris(butylcyclopentadienyl)yttrium (Y(CpBut)3) and H2O . Yttrium precursor showed thermal stability and a high reactivity in surface reactions with H2O. In situ monitoring of the deposition process by quartz crystal microbalance (QCM) showed that the growth of oxide is accompanied by the absorption of water into the bulk of the film, which can lead to chemical vapor deposition (CVD) type processes. Reducing amount of dosed water as well as purge time extension during ALD cycling allow to mitigate the CVD effects. The Y2O3 film growth rate 230°C varied depending on the number of cycles and had maximum value of 1.7 A/cycle. The films obtained at 230°C had a cubic polycrystalline structure with an average density of 96% of the Y2O3 bulk density. The X-ray photoelectron spectroscopy (XPS) measurements showed a carbon impurity level below the detections limit (~0.2 at %). The O/Y atomic concentration ratio estimated by Rutherford backscattering spectroscopy (RBS) was ~1.58. As deposited Y2O3 films had a refractive index of 1.85 (at 632.8 nm), whereas with protective ALD Al2O3 film, the refractive index was 1.73.

Atomic Layer Deposition of Aluminum Nitride and Oxynitride on Silicon Using Tris(dimethylamido)aluminum, Ammonia, and Water

Thin films of aluminum nitride and oxynitride were deposited by atomic layer deposition (ALD) in the temperature range from 170 to 290°C (optimal deposition temperature 200–230°C). Tris(dimethylamido) aluminum and ammonia were used as precursors for the atomic layer deposition of aluminum nitride (AlN). The average AlN film thickness per ALD cycle (deposition rate) at 200°C was ~0.8 A. Films were deposited on a silicon substracte with a native oxide layer. The N/Al atomic concentration ratio in the obtained films was ~1.3. Aluminum oxynitride films obtained by periodical dose of water vapor in the course of atomic layer deposition of AlN at 200°C. The composition of the deposited oxynitride films was Al0.5O0.43N0.07.

Unoccupied Electron States and the Formation of Interface between Films of Dimethyl-Substituted Thiophene–Phenylene Coolygomers and Oxidized Silicon Surface

The unoccupied electron states and the boundary potential barrier during deposition of ultrathin films of dimethyl-substituted thiophene–phenylene coolygomers of the type of CH3–phenylene–thiophene–thiophene–phenylene–CH3 (CH3–PTTP–CH3) on an oxidized silicon surface have been studied. The electronic characteristics have been measured in the energy range from 5 to 20 eV above the Fermi level using total current spectroscopy (TCS). The structure of the CH3–PTTP–CH3 film surfaces has been studied by atomic force microscopy (AFM), and the atomic compositions of the films have been studied by X-ray photoelectron spectroscopy (XPS). The changes in the maximum intensities measured by the TCS method obtained from the deposited CH3–PTTP–CH3 film and from the substrate during increasing in the organic coating thickness to 6 nm is discussed. The formation of the boundary potential barrier in the n-Si/SiO2/CH3–PTTP–CH3 is accompanied by the decrease in the surface work function from 4.2 ± 0.1 to 4.0 ± 0.1 eV as the organic coating thickness increases to 3 nm. The ratio of atomic concentrations C: S in the CH3–PTTP–CH3 films well corresponds to the chemical formula of CH3–PTTP–CH3 molecules. The roughness of the CH3–PTTP–CH3 coating surface was not higher than 10 nm on the ~10 × 10 μm areas as the total CH3–PTTP–CH3-layer thickness was about 100 nm.

Atomic Layer Deposition of Aluminum Nitride Using Tris(diethylamido)aluminum and Hydrazine or Ammonia

Aluminum nitride (AlN x ) films were obtained by atomic layer deposition (ALD) using tris(diethylamido) aluminum(III) (TDEAA) and hydrazine (N2H4) or ammonia (NH3). The quartz crystal microbalance (QCM) data showed that the surface reactions of TDEAA and N2H4 (or NH3) at temperatures from 150 to 225°C were self-limiting. The rates of deposition of the nitride film at 200°C for systems with N2H4 and NH3 coincided: ~1.1 A/cycle. The ALD AlN films obtained at 200°C using hydrazine had higher density (2.36 g/cm3, 72.4% of bulk density) than those obtained with ammonia (2.22 g/cm3, 68%). The elemental analysis of the film deposited using TDEAA/N2H4 at 200°C showed the presence of carbon (~1.4 at %), oxygen (~3.2 at %), and hydrogen (22.6 at %) impurities. The N/Al atomic concentration ratio was ~1.3. The residual impurity content in the case of N2H4 was lower than for NH3. In general, it was confirmed that hydrazine has a more preferable surface thermochemistry than ammonia.

Improving the mechanical property of amorphous carbon films by silicon doping

The aim of the present work was to optimise the deposition process of а-C:Si films and to establish the relationships between the structure, surface morphology, elementary and phase composition and the mechanical and tribological properties with respect to the C/Si ratio in the films. The а-C:Si films were formed via sputtering a composite silicon-graphite target by pulse arc discharge. The C/Si atomic concentration ratio was changed varying the C/Si mass concentration ratio of the cathode. Raman spectrometry showed that Si doping leads to a reduction in size of Csp2 clusters and to an increase of degree of disorder in the film structure with increasing the Si concentration. XPS analysis revealed the presence of the C-Si bonds in the films, which are typical for silicon carbide, with Csp2/Csp3 reducing at the increase of Si concentration in the film. It has been shown that the doping of the a-C films with Si results in decreased both the residual stresses and the surface energy, and influences the films friction kinetics, primarily friction coefficient. In general, the а-С:Si films properties depend on the silicone concentration and the certain Si concentration threshold value can provide the surface microstructure stabilisation, which is dealt with the graphitisation temperature increase, presumably due to SixOy formation at the film surface that leads to the improved tribological properties of the а-С:Si films.

Незаполненные электронные состояния и формирование интерфейса между пленками диметил замещенных тиофен- фенилен соолигомеров и поверхностью окисленного кремния

AbstractThe unoccupied electron states and the boundary potential barrier during deposition of ultrathin films of dimethyl-substituted thiophene–phenylene coolygomers of the type of CH_3–phenylene–thiophene–thiophene–phenylene–CH_3 (CH_3–PTTP–CH_3) on an oxidized silicon surface have been studied. The electronic characteristics have been measured in the energy range from 5 to 20 eV above the Fermi level using total current spectroscopy (TCS). The structure of the CH_3–PTTP–CH_3 film surfaces has been studied by atomic force microscopy (AFM), and the atomic compositions of the films have been studied by X-ray photoelectron spectroscopy (XPS). The changes in the maximum intensities measured by the TCS method obtained from the deposited CH_3–PTTP–CH_3 film and from the substrate during increasing in the organic coating thickness to 6 nm is discussed. The formation of the boundary potential barrier in the n -Si/SiO_2/CH_3–PTTP–CH_3 is accompanied by the decrease in the surface work function from 4.2 ± 0.1 to 4.0 ± 0.1 eV as the organic coating thickness increases to 3 nm. The ratio of atomic concentrations C: S in the CH_3–PTTP–CH_3 films well corresponds to the chemical formula of CH_3–PTTP–CH_3 molecules. The roughness of the CH_3–PTTP–CH_3 coating surface was not higher than 10 nm on the ~10 × 10 μm areas as the total CH_3–PTTP–CH_3-layer thickness was about 100 nm.

Surface characterization of low-temperature grown yttrium oxide

The step-by-step growth of yttrium oxide layer was controlled in situ using X-ray photoelectron spectroscopy (XPS). The O/Y atomic concentration (AC) ratio in the surface layer of finally oxidized Y substrate was found to be equal to 1.48. The as-grown yttrium oxide layers were then analyzed ex situ using combination of Auger electron spectroscopy (AES), elastic-peak electron spectroscopy (EPES) and scanning electron microscopy (SEM) in order to characterize their surface chemical composition, electron transport phenomena and surface morphology. Prior to EPES measurements, the Y oxide surface was pre-sputtered by 3 kV argon ions, and the resulting AES-derived composition was found to be Y0.383O0.465C0.152 (O/Y AC ratio of 1.21). The SEM images revealed different surface morphology of sample before and after Ar sputtering. The oxide precipitates were observed on the top of un-sputtered Y oxide layer, whereas the oxide growth at the Ar ion-sputtered surface proceeded along defects lines normal to the layer plane. The inelastic mean free path (IMFP) characterizing electron transport was evaluated as a function of energy in the range of 0.5–2 keV from the EPES method. Two reference materials (Ni and Au) were used in these measurements. Experimental IMFPs determined for the Y0.383O0.465C0.152 and Y2O3 surface compositions, λ, were uncorrected for surface excitations and approximated by the simple function λ = kEp at electron energies E between 500 eV and 2000 eV, where k and p were fitted parameters. These values were also compared with IMFPs resulting from the TPP–2 M predictive equation for both oxide compositions. The fitted functions were found to be reasonably consistent with the measured and predicted IMFPs. In both cases, the average value of the mean percentage deviation from the fits varied between 5% and 37%. The IMFPs measured for Y0.383O0.465C0.152 surface composition were found to be similar to the IMFPs for Y2O3.

W-Cu sputtered thin films grown at oblique angles from two sources: Pressure and shielding effects

Two series of W-Cu thin films were developed by the GLAD co-sputtering technique. The films were produced with two separated W and Cu targets. Both targets were focused on the centre of the substrate and were simultaneously sputtered using opposite and oblique angles of 80° from the substrate normal. In the first series, the W and Cu target currents were inversely changed from 50 to 140mA in order to tune the elemental concentrations and the microstructure. For the second series, a shield was added between W and Cu targets, perpendicularly to the substrate surface in order to prevent the cross-contamination of the targets. The target currents were varied similarly to the first series. Two argon sputtering pressures were used (0.42 and 1.0Pa) in each series, with and without the shield.Microstructure showed a tuneable inclined columnar microstructure, which become normal to the substrate at high pressure. The crystallographic structure was not significantly influenced by the shield implementation but rather by the sputtering pressure. The W/Cu atomic concentration ratio varied between 0.2 and 5.5 as a function of the sputtering pressure and target currents and an anisotropic chemical composition was measured inside the columns. The wide range of DC electrical resistivities (3.6×10−7 to 5.7×10−5Ωm) was discussed considering W and Cu target currents, high and low sputtering pressures and the use of a cross-contamination shield. The role of the microstructure was clearly shown since significantly higher resistivity was obtained at high pressure, as a function of the W/Cu atomic concentration ratio.

Effect of sputtering deposition process of indium tin oxynitride on surface damage of gallium nitride film

The indium tin oxynitride (ITON) thin film was deposited on the gallium nitride (GaN) film/c-plane sapphire substrate using the magnetron sputtering method. The effects of ITON film sputtering deposition process on the surface damages of GaN film, i.e. the surface morphology, structure and component of GaN films, are investigated systematically. The surface root-mean-square roughness of the GaN film increases after direct current sputtering deposition process (DC-SDP), while that decreases after radio frequency sputtering deposition process (RF-SDP). The photoluminescence intensity ratios of GaN films related with DC-SDP and RF-SDP versus the raw GaN film are 0.46 and 0.98, respectively. It indicates that the raw GaN film surface is damaged seriously after DC-SDP, but almost has no damages after RF-SDP. The atomic concentration ratio of N and Ga in the raw GaN film reduces from 0.97 to 0.87 after DC-SDP, and from 0.97 to 0.96 after RF-SDP. It suggests that RF-SDP can compensate more N atoms to the GaN film than that of DC-SDP. From the high resolution transmission electron microscopy images, we can see that the nitrogen vacancy density at the ITON/GaN interface after RF-SDP is smaller than that after DC-SDP. The forward turn-on voltages (corresponding to the operating current 20 mA) of light emitting diode (LED) fabricated with the GaN films after RF-SDP and that after DC-SDP are 2.6 and 3.0 V, respectively. It can be concluded that the technology of RF-SDP is useful to reduce the surface structural damages of the GaN films and the forward turn-on voltage of the device, and improves the performance of GaN-based LEDs.

Atomic concentration effect on thermal properties during solidification of Pt-Rh alloy: A molecular dynamics simulation

The solidification process of Platinum-Rhodium alloy from liquid phase to solid state is investigated at the nano-scale by using Molecular Dynamics Simulation (MDS) for different atomic concentration ratios of Pt. The critical nucleus radius, the bond order parameter, interfacial free energies and total energy based on nucleation theory of the alloy are examined with respect to the temperature changes. The heat of fusion from high temperatures to low temperatures during solidification of the alloy system is determined from molecular dynamics simulation. The structural development is determined from the radial distribution function. It is observed from the results that the melting point of the alloy system decreases with increasing concentration of Pt and that variation of Pt ratio in the alloy shows a remarkable effect on solidification to understand the cooling process of thermal effects.

Investigation of the effect of a diamine-based friction modifier on micropitting and the properties of tribofilms in rolling-sliding contacts

The effect of N-tallow-1,3-diaminopropane (TDP) on friction, rolling wear and micropitting has been investigated with the ultimate objective of developing lubricants with no or minimal environmental impact. A mini traction machine (MTM-SLIM) has been utilised in order to generate tribofilms and observe the effect of TDP on anti-wear tribofilm formation and friction. Micropitting was induced on the surface of specimens using a micropitting rig (MPR). The x-ray photoelectron spectroscopy (XPS) surface analytical technique has been employed to investigate the effect of TDP on the chemical composition of the tribofilm while atomic force microscopy (AFM) was used to generate high resolution topographical images of the tribofilms formed on the MTM discs. Experimental and analytical results showed that TDP delays the zinc dialkyldithiophosphate (ZDDP) anti-wear tribofilm formation. TDP in combination with ZDDP induces a thinner and smoother anti-wear tribofilm with a modified chemical structure composed of mixed Fe/Zn (poly)phosphates. The sulphide contribution to the tribofilm and oxygen-to-phosphorous atomic concentration ratio are greater in the bulk of the tribofilm derived from a combination of TDP and ZDDP compared to a tribofilm derived from ZDDP alone. Surface analyses showed that utilising TDP effectively mitigates micropitting wear in the test conditions used in this study. Reduction of micropitting, relevant to rolling bearing applications, can be attributed to the improved running-in procedure, reduced friction, formation of a smoother tribofilm and modification of the tribofilm composition induced by TDP.

Mg–Nb alloy films: Structure and stability in a balanced salt solution

Mg–Nb alloy films have been formed in a wide range of Nb concentrations using the magnetron sputtering technique. The systems are of interest in biomedical applications in-vivo. A distinctive distribution of Nb over Mg matrix was determined by scanning transmission electron microscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction. Corrosion behaviour was studied in a balanced salt solution with a physiological pH. Experiments were performed by solution analysis, dc-voltammetry, quartz crystal microgravimetry, X-ray photoelectron spectroscopy and electron microscopy. Quasi-passivity was reached at Nb/Mg atomic concentration ratio of one quarter. It has been shown that corrosion activity could be adjusted according to biomedical requirements by varying Nb concentration.

Effect of very low to high Sb-doping on the structural, electrical, photo-conductive and thermoelectric properties of fluorine-doped SnO2 (FTO) thin films prepared by spray pyrolysis technique

Transparent conducting fluorine and Sb-doped [SnO2: (F, Sb)] thin films have been deposited onto preheated glass substrates using the spray pyrolysis technique by the various dopant quantity of spray solution. The effect of antimony impurities on the structural, morphological, electrical, Thermo-electrical, optical and photoconductive properties of films has been investigated. The [F/Sn] atomic concentration ratio (x) in the spray solution is kept at value of 0.7 and the [Sb/Sn] atomic ratio (y) varied at values of 0, 0.0005, 0.001, 0.002, 0.01, 0.03, 0.05, 0.07 and 0.10. It is found that the films are polycrystalline in nature with a tetragonal crystal structure corresponding to SnO2 phase having orientation along the (110) and (200) planes. SEM images indicated that nanostructure of the films has a particle type growth. The average grain size increases with increasing spraying quantity of Sb-dopant. The compositional analysis of SnO2: (F, Sb) thin films were studied using EDAX. SEM and AFM study reveals the surface of SnO2: (F, Sb) to be made of nanocrystalline particles. The Hall Effect measurements have shown n-type conductivity in all deposited films. The lowest sheet resistance and highest the carrier concentration about 7.7 Ω/□ and 6.6 × 1022, respectively, were obtained for the film deposited with y = [Sb/Sn] = 0.001 and x = [F/Sn] = 0.7. The maximum of the Seebeck coefficient equal to 12.8 μV K−1 was obtained at 400 K for the film deposited with y = [Sb/Sn] = 0.10. The average transmittance of films varied over the range 10–80 % with change of Sb-concentration. The band gap values of samples were obtained in the range of 3.19–3.8 eV. From the photoconductive studies, the Sb-doped films exhibited sensitivity to incident light especially in y = 0.001. The electrical resistivity and carrier concentration vary in range 5.44 × 10−4 to 1.02 × 10−2Ω cm and 2.6 × 1022–6.6 × 1022 cm−3, respectively.

Atom-Probe Tomographic Analyses of Hydrogen Interstitial Atoms in Ultrahigh Purity Niobium.

Atomic-scale characterization of hydrogen and formation of niobium hydrides, using ultraviolet (wavelength=355 nm) picosecond laser-assisted local-electrode atom-probe tomography, was performed for ultrahigh purity niobium utilizing different laser pulse energies, 10 or 50 pJ/pulse or voltage pulsing. At 50 pJ/pulse, hydrogen atoms migrate onto the 110 and 111 poles as a result of stimulated surface diffusion, whereas they are immobile for <10 pJ/pulse or for voltage pulsing. Accordingly, the highest concentrations of H and NbH were obtained at 50 pJ/pulse. This is attributed to the thermal energy of the laser pulses being transferred to pure niobium specimens. Therefore, we examined the effects of the laser pulse energy being increased systematically from 1 to 20 pJ/pulse and then decreasing it from 20 to 1 pJ/pulse. The concentrations of H, H2, and NbH and the atomic concentration ratios H2/H, NbH/Nb, and Nb3+/Nb2+ were calculated with respect to the systematically changing laser pulse energies. The atomic concentration ratios H2/H and NbH/Nb are greater when decreasing the laser pulse energy than when increasing it, because the higher residual thermal energy after decreasing the laser pulse energy increases the mobility of H atoms by supplying sufficient thermal energy to form H2 or NbH.

Structural and magnetic properties of La0.7Sr0.1AgxMnO3−δ perovskite manganites**Project supported by the National Natural Science Foundation of China (Grant No. NSF-11174069), the Natural Science Foundation of Hebei Province, China (Grant No. E2011205083), the Key Item Science Foundation of Hebei Province, China (Grant No. 10965125D), the Key Item Science Foundation of the Education Department of Hebei Province, China (Grant No. ZD2010129), and

Ag-doped manganite powder samples, La0.7Sr0.1AgxMnO3−δ (x = 0.00, 0.025, 0.05, 0.075, and 0.10) were synthesized using the sol–gel method. X-ray diffraction patterns indicated that the samples had two phases with the perovskite being the dominant phase and Mn3O4 being the second phase. X-ray energy dispersive spectra indicated that the ratio of Ag to La was very close to that of the nominal composition in the samples. The specific saturation magnetizations at 300 K increased from 32.0 A·m2/kg when x = 0.00 to 46.8 A·m2/kg when x = 0.10. The Curie temperature, TC, of the samples increased from 310 K when x = 0.00 to 328 K when x = 0.10. Because the atomic concentration ratios of La, Sr, and Mn in the five samples were all the same and only the Ag concentration changed, the variations of the specific saturation magnetizations at 300 K and the Curie temperatures suggested that the Ag cations have been doped into the A sites of the perovskite phase in the samples.

Inductively coupled reactive ion etching studies on sputtered yttria stabilized zirconia thin films in SF6, Cl2, and BCl3 chemistries

Downscaling of yttria stabilized zirconia (YSZ) based electrochemical devices and gate oxide layers requires successful pattern transfer on YSZ thin films. Among a number of techniques available to transfer patterns to a material, reactive ion etching has the capability to offer high resolution, easily controllable, tunable anisotropic/isotropic pattern transfer for batch processing. This work reports inductively coupled reactive ion etching studies on sputtered YSZ thin films in fluorine and chlorine based plasmas and their etch chemistry analyses using x-ray photoelectron spectroscopy. Etching in SF6 plasma gives an etch rate of 7 nm/min chiefly through physical etching process. For same process parameters, in Cl2 and BCl3 plasmas, YSZ etch rate is 17 nm/min and 45 nm/min, respectively. Increased etch rate in BCl3 plasma is attributed to its oxygen scavenging property synergetic with other chemical and physical etch pathways. BCl3 etched YSZ films show residue-free and smooth surface. The surface atomic concentration ratio of Zr/Y in BCl3 etched films is closer to as-annealed YSZ thin films. On the other hand, Cl2 etched films show surface yttrium enrichment. Selectivity ratio of YSZ over silicon (Si), silicon dioxide (SiO2) and silicon nitride (Si3N4) are 1:2.7, 1:1, and 1:0.75, respectively, in BCl3 plasma. YSZ etch rate increases to 53 nm/min when nonoxygen supplying carrier wafer like Si3N4 is used.