Atmospheric Plasma-enhanced Chemical Vapor Research Articles

Adhesive Hybrid SiO2.01C0.23Hx Nanoparticulate Coating on Polyethylene (PE) Separator by Roll-to-Roll Atmospheric Pressure Plasma

For the ever-increasing demand for highly safe lithium-ion batteries (LIBs), the common sol-gel process provides heat-resistance to separators with an inorganic coating, where the adhesion to the separator is the key to safety and stability. In this paper, we present a SiO2.01C0.23Hx-coated polyethylene (PE) separator through a roll-to-roll atmospheric plasma-enhanced chemical vapor deposition (R2R-APECVD) of hexamethyldisiloxane (HMDSO)/Ar/O2. The adhesion strength of SiO2.01C0.23Hx-coated PE was tested by peel-off test and found to be higher than that of the commercial Al2O3-coated separator (0.28 N/mm vs. 0.06 N/mm). Furthermore, the SiO2.01C0.23Hx-coated PE separator showed better electrochemical performance in C-rate and long term cycle tests. FTIR, SEM, and XPS analysis indicate that the increased adhesion and electrochemical performance are attributed to the inner hybrid SiO2.01C0.23Hx coating with organic and inorganic components.

상압 플라즈마를 이용한 무기박막의 화학기상 증착법에 대한 연구동향

School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do 16419, Korea(Received October 14, 2015 ; revised October 28, 2015 ; accepted October 30, 2015)AbstractIn recent years, the cleaning and activation technology of surfaces using atmospheric plasma as well asthe deposition technology for coating using atmospheric plasma have been demonstrated conclusively anddrawn increasing industrial attention. Especially, due to the simplicity, the technology using atmospheric plasmaenhanced chemical vapor deposition has been widely studied from many researchers. The plasma source typecommonly used as the stabilization of diffuse glow discharges for atmospheric pressure plasma enhancedchemical vapor deposition pressure is the dielectric barrier discharge. In this review paper, some kinds ofmodified dielectric barrier discharge type will be presented. And, the characteristics of silicon based compoundsuch as SiOx and SiNx deposited using atmospheric plasma enhanced chemical vapor system will be discussed.

Note: Continuous synthesis of uniform vertical graphene on cylindrical surfaces

This note describes a new reactor design for continuous synthesis of vertically oriented graphene (VG) sheets on cylindrical wire substrates using an atmospheric plasma-enhanced chemical vapor deposition (PECVD) system. Through combining a U-shaped reactor design with "dynamic mode" synthesis featuring simultaneous rotational and axial movements of the metallic wire substrate, the new setup can enable continuous synthesis of VG sheets on the wire surface with remarkable uniformity in both circumferential and axial directions. In contrast, synthesis of VG at "static mode" with a fixed substrate can only lead to non-uniform growth of VG sheets on the wire surface. Potential applications of the resulting uniform-VG-coated metallic wire could include field emitters, field-ionization-based neutral atom detectors, and indoor corona discharges.

Properties of fluorinated silica glass deposited at low temperature by atmospheric plasma-enhanced chemical vapor deposition

The atmospheric pressure plasma-enhanced chemical vapor deposition of fluorinated silica glass was demonstrated at a temperature of 120 °C. The process was carried out by simultaneously feeding tetramethylcyclotetrasiloxane (TMCTS) and triethoxyfluorosilane (TEOFS) into the afterglow of helium and oxygen plasma. The effect of the flow rate of the fluorinated precursor on the growth rate, composition, and optical properties was examined. The ratio of atomic fluorine to atomic silicon increased up to 10% at a TEOFS/TMCTS atomic Si feed ratio of 1.3 and then leveled off. Coatings made from pure TMCTS and both precursors showed higher surface roughness and porosity, and more hydroxyl content compared to coatings made from pure TEOFS. The refractive indices at 633 nm of films produced using pure TMCTS, a TEOFS/TMCTS atomic Si feed ratio of 1.3 and pure TEOFS were 1.457, 1.449, and 1.411, respectively.