There is no doubt that when solid surfaces are modified, the functional groups and atoms directly bonded to solid atoms play a major role in adsorption interactions with molecules or resins. In this study, the adhesion and dissociation between epoxy resin and molecules containing Si atoms were analyzed. The analysis, conducted in contact with the solid surface of silicon, utilized quantum chemical calculations based on a molecular model. We compared some Si-containing molecular models to test quantum chemical calculations that contribute to the study of adhesion and dissociation between epoxy resins and solid surfaces somehow other than simple potential energy curve calculations. The AFIR (artificial force induced reaction) method, implemented in the GRRM (global reaction route mapping) program, was employed to separate an epoxy resin model molecule and three types of silicon compounds (Si(CH3)2(OH)2, Si(CH3)4, and (CH3)2SiF2) in three directions, determining their minimum dissociation energy when changing the applied energy by 2.5 kJ/mol. In systems with weak hydrogen bonds, such as Si(CH3)4 or (CH3)2SiF2, the energy required for dissociation was not large; however, in systems with strong hydrogen bonds, such as Si(CH3)2(OH)2, dissociation was more difficult in the vertical direction. Although anisotropy due to hydroxyl groups was calculated in the horizontal direction, dissociation remained relatively easy.