Arrested Precipitation Technique Research Articles

Effect of the deposition temperature on ZnCd(SSe)2 for enhance the efficiency of solar cell application

The photoelectrochemical efficiency of ZnCd(SSe)2 thin films shows a notable enhancement, increasing from 0.08 % to 0.28 %, when deposited at different temperatures (room temperature, 40 °C, 50 °C, and 60 °C). This study aims to develop ZnCd(SSe)2 thin films using a cost-effective single-step process called the Arrested Precipitation Technique (APT). This study demonstrates that varying the deposition temperatures significantly impacts the optical, structural, and morphological properties of the resulting thin films. Optical analysis shows a reduction in the optical energy band gap from 1.92 to 1.63 eV as the bath temperature increases. X-ray diffraction confirms the formation of nanocrystalline thin film samples with improved crystallinity, as indicated by the increased intensity of the (100) diffraction peak. Scanning electron microscopy reveals changes in surface morphology corresponding to different deposition temperatures. The thin films exhibit polycrystalline characteristics, as verified by transmission electron microscopy and selected area electron diffraction pattern analysis. Energy Dispersive Spectroscopy analysis identifies the presence of Cd, Zn, S, and Se elements with near-ideal stoichiometry, suggesting a favorable composition. Importantly, the photoelectrochemical performance increases significantly from 0.08 % to 0.28 % with rising deposition temperature, marking a substantial improvement with potential for further investigation and development in the field.

Fabrication of single-step novel synthesis of ZnCd(S0.5Se0.5)2 thin films for photoelectrochemical (PEC) cell application

In our study, we use a new method called the arrested precipitation technique (APT) to create CdZn(SSe)2 (CZSS) thin films. We obtain samples at different deposition times, ranging from 2.5 to 4 h, and analyze the effects of deposition time on the opto-structural, morphological, compositional, and photoelectrochemical (PEC) solar cell properties. As a result, we find that the band gap energy increases from 2.366 to 2.60 eV with prolonged growth time, as shown by UV–Vis spectra. X-ray diffraction (XRD) analysis confirms that the crystal structure is hexagonal, with the crystallite size increasing from 76 to 93 nm. The dislocation density and microstrain, determined by the Scherrer formula, decrease from 1.72 to 1.14 lines m−2 and from 4.75 × 10−3 to 3.87 × 10−3 (lines m−2), respectively. These results are validated using the Williamson-Hall (WH) plot and size-strain plot. The average grain size, evaluated using the standard scale bar method in scanning electron microscopy (SEM), ranges from 80 to 150 nm across CZ1 to CZ4 samples. Transmission electron microscopy (TEM) images of CZ4 and CZ2 reveal particle sizes of 101 nm and 87 nm, respectively, while selected area electron diffraction (SAED) patterns confirm the polycrystalline nature of the material. Energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) analyses confirm the presence of Cd, Zn, S, and Se elements in their intended stoichiometry. Notably, CZSS photoelectrodes deposited over 4 h show better performance in Photoelectrochemical cells (PEC), achieving the highest photoconversion efficiency (ɳ) at 2.33 %, as evidenced by J-V measurements.

Characterization of Bi incorporated Sb2Se3 thin films deposited by arrested precipitation technique

Antimony bismuth selenide thin films (Sb2-xBixSe3), with x varying from 0.00 to 0.10, have been deposited on glass substrate using the arrested precipitation technique (APT). The preparative parameters such as temperature, concentration, and pH have been optimized in order to deposit Sb2-xBixSe3 thin films. The as-deposited Sb2-xBixSe3 thin films are specularly reflective and orange in colour. The films were characterized by optical absorption, x-ray diffraction (XRD), scanning electron microscope (SEM) and energy dispersive x-ray analysis (EDS) studies. An analysis of the optical absorption data of the as-deposited films revealed an indirect transition with the estimation of the corresponding band gap value.

Morphological Tuning of Bi2Se3 Thin Films for Photoelectrochemical Performance

AbstractIn the present report, we have reported the bismuth selenide (Bi2Se3) thin films for solar cell application. The synthesis of bismuth selenide (Bi2Se3) thin film by using modified chemical bath deposition i. e. arrested precipitation technique (APT). The Physico‐chemical properties of synthesized Bi2Se3 thin films are studied as a function of surfactants. The XRD patterns confirm the nanocrystalline nature. The SEM images reveal morphological transitions from fibrous reticulate structure to spongy balls‐like structure. The compositional analysis confirms bismuth and selenium in good stiochiometry. Optical studies show presence of a absorption in the visible range with a band gap in the range of 1.5 eV to 1.9 eV. All these results reveal that surfactant‐assisted Bi2Se3 thin film is a better candidate for PEC performance.

Synthesis and characterization of arrested precipitation assembled Cu2Se thin films

Nanostructured thin films of copper selenide (Cu2Se) deposited by arrested precipitation technique (APT) with controlled release of ions at suitable pH=10.5. The deposited Cu2Se films were characterized for optical, structural, and morphological properties. Optical absorption study indicates that the band gap energy (2.26 eV) of material and shows visible radiation absorption. XRD shoe that APT is a favorable technique for the synthesis of pure nanocrystalline Cu2Se thin films with monoclinic crystal structure. An electrochemical impedance spectroscopy analysis confirms the charge transfer resistance. X-ray photoelectron spectroscopy reveals stoichiometry at valance state of Cu2Se.

Synthesis and characterization of arrested precipitation assembled Cu2Se thin films

Nanostructured thin films of copper selenide (Cu2Se) deposited by arrested precipitation technique (APT) with controlled release of ions at suitable pH=10.5. The deposited Cu2Se films were characterized for optical, structural, and morphological properties. Optical absorption study indicates that the band gap energy (2.26 eV) of material and shows visible radiation absorption. XRD shoe that APT is a favorable technique for the synthesis of pure nanocrystalline Cu2Se thin films with monoclinic crystal structure. An electrochemical impedance spectroscopy analysis confirms the charge transfer resistance. X-ray photoelectron spectroscopy reveals stoichiometry at valance state of Cu2Se.

Exploring the microstructural, optoelectronic properties of deposition time dependent Cu2Sn(S,Se)3 thin film synthesized by non-vacuum arrested precipitation technique

A novel chemical approach is utilized to synthesize Cu2Sn(S,Se)3 (CTSSe) thin films by non-vacuum arrested precipitation technique (APT) via controlled release of ions from complexed solution. Effect of deposition time on the microstructural and optoelectronic properties of CTSSe thin films was studied comprehensively. The optical absorption studies demonstrate a decrease in band gap energy from 1.84 to 1.62 eV as the deposition time increases. Nanocrystalline thin films with improved grain size were illustrated from XRD studies. The FESEM micrographs depict progress in surface microstructure from a bunch of nanospheres to aggregated and densely packed nanospheres. EDS spectrum confirms the stoichiometric formation of Cu2Sn(S,Se)3 thin film. While, the XPS spectrum validates Cu1+, Sn4+, S2-, Se2-valence states of the elements in CTSSe thin film. Furthermore, the photoelectrochemical cell performance of 0.3 % for bare CTSSe thin film was elucidated with cell configuration glass-FTO/CTSSe/(I-/I3-)/graphite without any post deposition treatments. Also, the lowering of charge transfer resistance from EIS measurements corroborates for improved photoconversion efficiency. Finally, synthesis of CTSSe thin films by a simple APT finds a promising approach to fabricate efficient CTSSe photocathode for photovoltaic applications.

Photoelectrochemical (PEC) Investigation of Ga‐Doped MoBi2Se5 Thin Films Deposited by Arrested Precipitation Technique

AbstractNanocrystalline Ga‐doped molybdenum bismuth selenide thin films have been deposited onto amorphous and fluorine‐doped tin oxide (FTO) coated glass substrate using arrested precipitation technique (APT), which is based on self‐organized growth process. Deposited thin films of MoBi(2‐x)GaxSe5 are characterized by X‐ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM), and X‐ray photoelectron spectroscopy (XPS). XRD analysis shows mixed phase type crystal structure of MoBi(2‐x)GaxSe5 thin films. SEM analysis shows that closely packed grains provide a pinhole‐free morphology. The average surface roughness of as deposited MoBi(2‐x)GaxSe5 (x = 0.0, 0.04, and 0.10) thin films obtained from AFM images is 5.04 nm μm‐2. In TEM analysis, lattice plane (015), (103), and (103) are observed in SAED pattern, which confirms mixed phase type crystal structure of MoBi(2‐x)GaxSe5 thin films. The binding energy, elemental composition, and surface nature of MoBi(2‐x)GaxSe5 thin film is confirmed by using XPS. The photoelectrochemical (PEC) investigations are carried out using cell configuration p‐MoBi(2‐x)GaxSe5(FTO)/0.5M (Na2Sx‐ NaOH‐S)/counter electrode. After Ga doping, MoBi2Se5 thin film electrodes exhibit photoactivity in sulphide/polysulphide electrolyte toward positive polarity (p‐type behavior). On the addition of gallium, power conversion efficiency of MoxBi(2‐x)GaxSe5 thin films decreases from 0.456 to 0.171%.

Morphological engineering of novel nanocrystalline Cu2Sn(S,Se)3 thin film through annealing temperature variation: Assessment of photoelectrochemical cell performance

Robust nanocrystalline Cu2Sn(S,Se)3 (CTSSe) thin films have been synthesized for the first time by arrested precipitation technique (APT) through arrest and release of ions from complexed solution and used as potential photocathode for photoelectrochemical cell application. The assessment of annealing temperature variation on the optostructural and optoelectronic performance of CTSSe thin films was studied. It was noticed that the annealing temperature, effectively modifies the absorption and crystalline properties of CTSSe thin films. Optical absorption interpretations elucidated the direct allowed nature of transitions with alteration of band gap energy from 1.68-1.50 eV as the annealing temperature increases. Structural studies from the XRD demonstrates the shifting of diffraction peak to the lower 2θ values with the average crystallite size in the range 19 to 28 nm. A comparative study of XRD and Raman spectra revealed the formation of cubic CTSSe crystal structures. Surface morphological alterations from a small bunch of nanograins to nanorocks to nanocubes were manifested with effective variation in annealing temperature. The compositional studies demonstrates the presence of Cu1+, Sn4+, S2− and Se2− oxidation states in Cu2Sn(S,Se)3 thin film synthesized by APT. Single phase cubic crystal formation from HRTEM and SAED results, verify good crystallinity of synthesized CTSSe thin film. Furthermore, the J-V curves shows the highest photoelectrochemical cell efficiency of 0.42 % for bare CTSSe photocathode with two electrode cell configuration of glass/FTO/Cu2Sn(S,Se)3/(I−/I3−)/graphite. A reduced charge transfer resistance (Rct) from the EIS plots supports for the improved PEC efficiency.

Investigating the photovoltaic performance of surfactant-assisted MoBi2Se5 thin films

Molybdenum bismuth selenide (MoBi2Se5) has been proved to be a promising material for photoelectrochemical solar cell application. As MoBi2Se5 thin films are more corrosion resistant than bismuth (III) selenide (Bi2Se3) thin films, MoBi2Se5 can also be used as a buffer layer due to its distinctive optostructural properties. In this study, the authors synthesized surfactant-assisted nanostructured MoBi2Se5 thin films by using a cost-effective chemical route – namely, the arrested precipitation technique. The synthesized thin films were analyzed for optostructural, surface morphological, compositional and photovoltaic applications using the X-ray diffraction (XRD) technique, ultraviolet–visible spectroscopy, scanning electron microscopy and energy-dispersive X-ray spectroscopy, and their photoelectrochemical solar cell performance was checked. The nanocrystalline nature of MoBi2Se5 thin films was confirmed from the XRD patterns. An increment in the optical bandgap energy was observed with surfactant mediation. The surface morphology of MoBi2Se5 changed from spherical to spongy-ball-like nanofibrous surface morphology after surfactant assistance. Furthermore, both the as-synthesized and surfactant-assisted MoBi2Se5 thin films showed photoelectrochemical solar cell applicability.

Probing the role of deposition time in tuning the physico-chemical, optoelectronic performance of Cu2SnS3 thin films

Abstract Time dependent Cu2SnS3 (CTS) thin films have been synthesized by simplistic arrested precipitation technique (APT) via restricted release of ions from metal complex and used as potential photocathode for photovoltaic application. The influences of deposition time on physico-chemical, optoelectronic performance have been studied for the first time. With progress in reaction time decrement in optical band gap from 1.94 to 1.75 eV was noticed. XRD & Raman analysis verified that CTS crystallize in tetragonal crystal structure. FESEM micrographs depicted nanospherical morphology of the material. The oxidation states of the elements were confirmed from XPS and are in good agreement with CTS. A drastic improvement in the photoconversion efficiency of bare CTS photocathode with 0.34 % was noticed through cell configuration glass/FTO/Cu2SnS3/(I−/I3−)/graphite.

Investigating the light harvesting capacity of sulfur ion concentration dependent SnS2 thin films synthesized by self-assembled arrested precipitation technique

In the present report, we have successfully synthesized sulfur ion concentration dependent SnS2 thin films using energy efficient, low cost and self-assembled arrested precipitation technique (APT). The influence of sulfur ion concentration on the crystallinity, optical tuning, surface morphology and photoconversion efficiency of SnS2 thin films was studied thoroughly. Optical absorption studies confirm a red shift in the absorption edge, which asserts its application as photoactive material. X-ray diffraction (XRD) and Raman studies confirmed the SnS2 thin film corresponds to the hexagonal crystal phase with preferential orientation along (001) plane, further the compositional analysis was verified by Energy dispersive x-ray (EDS) and x-ray photoelectron spectroscopy (XPS) studies. SEM images clearly highlight the transformation of surface morphology from nanospheres to compact interconnected nanograins with an increase in sulfur ion concentration; also HRTEM image confirms the formation of aggregated nanograins. Moreover, the diffraction rings in the SAED pattern suggest the hexagonal SnS2 structure which corroborates well with the XRD data. SnS2 as photoanode exhibits good photoelectrochemical (PEC) performance in I-/I3- redox electrolyte. Synthesized SnS2 thin films showed a significant enhancement in photocurrent conversion efficiency (0.09%) among reported values. Thus, sulfur ion concentration variation has the ability to alter the PEC performance of SnS2. Electrochemical Impedance Spectroscopy (EIS) study was used to analyze the charge transfer resistance (Rct) through the film. Finally, the improved PEC performance highlights the application of SnS2 photoanode in PEC cell.

Multinary CdZnIn2(SeTe)5 thin films produced by arrested precipitation technique for photoelectrochemical solar cells

Chemically synthesized multinary CdZnIn2(SeTe)5 thin film used as photoanodes in solar cell have been systematically investigated. The indium ion concentration dependent morphological evolution and its consequent effect on photoelectrochemical properties were studied. The growth mechanism for the morphological evolution of CdZnIn2(SeTe)5 thin films has been proposed. Optical absorption values varied with the indium concentration and the band gap energy is found in the range 1.87eV to 1.72 eV. The X-ray diffraction (XRD) patterns reveal the formation of rhombohedra, cubic and hexagonal CdZnIn2(SeTe)5 thin films with the preferred (110), (138) and (220) orientation for CdZnIn2(SeTe)5 microflower, which is further supported by the analysis of the high resolution transmission electron micrographs (HRTEM). The SEM image revealed that the surface morphology of multinary thin films have been changed to microflower by systematic control of indium ion concentration. Finally, current-voltage measurements at different concentration for solar cell with maximum efficiency were carried out in order to find out the dominant transport mechanisms. The solar cell fabricated shows the best conversion efficiency of 1.28%. The deposition of a certain amount of indium was beneficial to the improvement of photoelectrochemical conversion efficiency. To the best of our knowledge, it is the highest efficiency for CdZnIn2(SeTe)5 based photoanode solar cells fabricated from APT.

Enhancement in thermoelectric performance of Cu3SbSe4 thin films by In(III) doping; synthesized by arrested precipitation technique

We have successfully synthesized p-type Cu3(Sb1−xInx)Se4 thin films by solution based arrested precipitation technique and studied their thermoelectric properties for the first time. The deposited thin films were characterized for their structural, morphological, compositional and electrical transport properties. Thin films shows enhancement in figure of merit (ZT) with increasing In(III) content. The maximum ZT 0.267 obtained for Cu3(Sb0.92In0.08)Se4 thin film at 300 K.

Arrested precipitation assembly of nanosheets Cu2ZnCd (S, Se)3 thin film for solar cell performance: Novel skilful synthesis

In the present investigation, a high-quality nanosheet-like hexagonal Cu2ZnCd (S, Se)3 thin film has been synthesized via facile, simple and cost effective arrested precipitation technique (APT) through the complex stability, and release of metal ions. The surface morphology, chemical, optical, compositional and electrochemical properties of the resultant Cu2ZnCd (S, Se)3 thin film studied systematically. X-ray photoelectronic results show that stoichiometric composition. EIS reveals low value of resistance, power conversion efficiency of photoanode obtained was 0.62% in an aqueous polysulfide electrolyte.

Surfactant mediated synthesis of bismuth selenide thin films for photoelectrochemical solar cell applications

In the present report, nanostructured bismuth selenide (Bi2Se3) thin films have been successfully deposited by using arrested precipitation technique (APT) at room temperature. The effect of three different surfactants on the optostructural, morphological, compositional and photoelectrochemical properties of Bi2Se3 thin films were investigated. Optical absorption data indicates direct and allowed transition with a band gap energy varied from 1.4 eV to 1.8 eV. The X-ray diffraction pattern (XRD) revealed that Bi2Se3 thin films are crystalline in nature and confirmed rhombohedral crystal structure. SEM micrographs shows morphological transition from interconnected mesh to nanospheres like and finally granular morphology. Surface topography of Bi2Se3 thin films was determined by AFM. Compositional analysis of all samples was carried out by energy dispersive X-ray spectroscopy (EDS). Finally, all Bi2Se3 thin films shows good PEC performance with highest photoconversion efficiency 1.47%. In order to study the stability of Bi2Se3 thin films four cycles are repeated after gap of one week each. Further PEC performance of all Bi2Se3 thin films are also supported by electrochemical impedance (EIS) measurement study.

Deposition, characterizations and photoelectrochemical performance of nanocrystalline Cu–In–Cd–S–Se thin films by hybrid chemical process

Nanocrystalline, uniform, pentanary mixed metal chalcogenide (PMMC) thin films of copper indium cadmium sulfoselenide (CuInCd(SSe)3) were successfully synthesized using simple, self-organized, arrested precipitation technique in an aqueous alkaline medium. The optical, structural, morphological, compositional and electrical properties of synthesized thin films were investigated as a function indium (In3+) concentration. An optical absorption study revealed that direct allowed transition and band gap energy decreases typically from 1.46 to 1.25 eV. The X-ray diffraction studies revealed that the PMMC thin films have a nanocrystalline nature and crystallite size increases with the increase in the In3+ concentration. Tuning of surface morphology from nanospheres to peas-like morphology with uniform, well-adhered distributed throughout the substrate surface were observed by field emission scanning electron microscopy micrographs. The high-resolution transmission electron microscopy images and selected area electron diffraction pattern were illustrated that compactly interconnected particles with nanocrystalline nature. Energy-dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy results confirmed that synthesized thin films had an appropriate chemical purity. The electrical conductivity and thermoelectric power measurement indicates that, the films have n-type conductivity. A photoelectrochemical conversion efficiency of 2.40% was achieved with a current density of 2.87 mA/cm2. The developed route may provide an alternative approach to synthesize multinary metal chalcogenide thin-film solar cell. Furthermore, we have developed a predictive model of a CICSSe thin-film solar cell using the artificial neural network. The proposed model is useful for the integrated development environment for the predictive modeling and design of high-efficient solar cells.

Room Temperature Synthesis of Nanocubic CuInSe2 Thin Films

The arrested precipitation technique (APT) is used to deposit CuInSe2 thin films. The deposition of thin films is carried out at room temperature. The optical study reveals direct allowed type of transition for CuInSe2 thin films. The XRD pattern confirms mixed phase of CuInSe2 thin films. The SEM image reveals nanocubic thin film formation. The EDS analysis confirms presence of copper, indium and selenium elements in the synthesized thin film. The synthesized thin films are beneficial for the solar cell applications.

Development of CdZn(SSe)2 thin films by using simple aqueous chemical route: Air annealing

In the present investigation we have successfully depositedCdZn(SSe)2thin films by using facile self organised Arrested Precipitation Technique (APT).Preparative conditions were optimized during initial stage of experimentation to obtain good quality CdZn(SSe)2 thin film.The resulted thin film was annealed in air at 373K for 1hr. FurtherOptical, structural, morphological and compositional properties of annealed thin filmswere investigated.The optical band gap value of thin film was estimated from the absorption spectrum which is found to be 1.85 eV. X-ray diffraction (XRD) study reveals that grown CdZn(SSe)2thin film was nanocrystalline with hexagonalcrystal structure.The SEM micrograph shows the formation of layered structure containing dense layer covered by uniform distribution of spherical grains. Energy dispersive X-ray (EDS) analysis confirm the presence of Cd, Zn, S and Se elements in the synthesized and annealed thin film. The film was obtained with a well-defined composition, very close to the expected atomic percentage.

Novel synthetic route for the synthesis of ternary Cd(SSe) photoelectrode and their photoelectrochemical application

In the present investigation, we have synthesized nanocrystalline cadmium sulphoselenide Cd(SSe) thin film photoelectrodes on ultrasonically cleaned bare and fluorine doped tin oxide coated glass substrate using facile, cost effective and extremely convenient arrested precipitation technique at different time intervals (1, 1.5, 2 and 2.5 h). Optical, structural, morphological, compositional and photoelectrochemical (PEC) properties were investigated as function of deposition time. The synthesized films were characterized by UV–Vis-NIR spectrophotometer, X-ray diffraction (XRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), Energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS). Optical absorption spectrum shows a strong absorption in the wavelength range 300–1100 nm with band gap variation in the range of 2.05–1.87 eV. The XRD patterns shows nanocrystalline nature with crystallite size 58–76 nm and exhibits pure hexagonal crystal structure. The SEM micrograph demonstrates formation of well adherent, pinhole free thin films with nanosphere, nanopetal like morphology which is finally modified into flowerlike morphology. Transmission electron microscopy (TEM) and HRTEM results confirm the nanocrystalline nature and selected area electron diffraction pattern reveals hexagonal crystal structure of deposited Cd(SSe) thin films. EDS and XPS showed that the composition of Cd(SSe) thin films was of good stoichiometry. Finally these prepared photoelectrodes were tested for their PEC performance in sulphide/polysulphide electrolyte and promising results were found.