Abstract
Antimony bismuth selenide thin films (Sb2-xBixSe3), with x varying from 0.00 to 0.10, have been deposited on glass substrate using the arrested precipitation technique (APT). The preparative parameters such as temperature, concentration, and pH have been optimized in order to deposit Sb2-xBixSe3 thin films. The as-deposited Sb2-xBixSe3 thin films are specularly reflective and orange in colour. The films were characterized by optical absorption, x-ray diffraction (XRD), scanning electron microscope (SEM) and energy dispersive x-ray analysis (EDS) studies. An analysis of the optical absorption data of the as-deposited films revealed an indirect transition with the estimation of the corresponding band gap value.
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