Herein, triangularâlattice nanopillar templates are fabricated on sputterâdeposited AlN/Si (111) substrates. Nanotemplate selectiveâarea growth via radiofrequencyâplasmaâassisted molecular beam epitaxy is employed to grow GaN nanocolumns on the nanopillars. Wellâordered uniform GaN nanocolumn arrays are obtained by inserting a migrationâenhancedâepitaxy grown AlN/AlGaN buffer layer, thereby aligning the polarity of GaN to Gaâpolar. Subsequently, bulk InGaN active layers are grown on top of the GaN nanocolumns with increasing growth time (tg = 10â20 min). In the initial stage of growth (tg = 10 min), lowâInâcontent InGaN grows on the edges of the sixâsided pyramidal top of the GaN nanocolumns. As the growth progresses, lowâInâcomposition InGaN fills the sides between InGaN on the edges, while highâInâcomposition InGaN rapidly grows on the top of the câplane nanocolumns. Highâangle annular darkâfield scanning transmission electron microscopy reveals the formation of an InGaN core, covered with a lowâInâcomposition InGaN shell, on the top of the nanocolumns. At tg = 20 min, the photoluminescence spectrum exhibits a peak at 669 nm with a full width at half maximum value of 51.7 nm. Thus, the proposed method is suitable for growing redâlightâemitting wellâordered InGaN/GaN nanocolumn arrays on Si.