Selective area growth of InGaN-based nanocolumn LED crystals on AlN/Si substrates useful for integrated μ-LED fabrication

Abstract

Triangular-lattice nanopillar-array templates with a lattice constant of 280 nm and with AlN disks on top of the underlying Si pillars were prepared on 2-in. AlN/Si substrates through nanoimprint lithography and dry etching. Regularly arranged GaN nanocolumn arrays with a 220-nm diameter were grown on the templates to fabricate wide-area emission InGaN/GaN nanocolumn light emitting diodes (LEDs). An LED chip with an Indium Tin Oxide (ITO) electrode with an area of 3 × 4 mm2 operated at a current of 100 mA emitted blue-green light (504 nm in wavelength) from the entire surface of the large emission area.