Amorphous oxide semiconductors, such as indium-gallium-zinc oxide (IGZO), have attracted significant attention due to their high electron mobility and low processing temperatures compared to amorphous silicon (a-Si). These characteristics make IGZO suitable for large-area applications, and its transparency holds promise for next-generation electronic devices. However, the commercialization and large-scale production of IGZO are limited by the toxicity of indium and the high cost of gallium. In this context, AZTO can emerges as a cost-effective and less toxic alternative. This study explores the fabrication and characterization of bottom-gate thin-film transistors (TFTs) using aluminum-zinc-tin oxide (AZTO) as an alternative channel material. AZTO films were deposited at room temperature via radio frequency (RF) magnetron sputtering with varying ratios of oxygen and argon. Comprehensive measurements, including temperature stress (TS), negative bias temperature stress (NBTS), activation energy, and density of states (DOS), were conducted to evaluate the electrical properties and stability of the TFTs. The results indicate that increasing the oxygen partial pressure during deposition reduces oxygen vacancies, significantly enhancing the stability of the devices. These findings highlight AZTO as a cost-effective and less toxic alternative to IGZO, particularly in display applications. Additionally, the study provides insights into the fundamental mechanisms governing the electrical behavior of AZTO-based TFTs, further confirming their suitability for advanced display technologies.
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