The technique of electron beam annealing for fabricatingMgB2 thin films hasbeen explored. MgB2 thin films were prepared by e-beam evaporation of M–B precursor films on 6H–SiC(0001) substrates followed by ex situ electron beam annealing without any extraMg vapor or argon gas protection. The very short annealing duration, about 1 s,effectively prevented volatilization and oxidation of Mg and decomposition ofMgB2. In comparisonwith the MgB2 thin films grown by other techniques, our films show mediumqualities including a superconducting transition temperature ofTconset ∼ 35.3 K, a transition widthΔTc ∼ 0.2 K, and a criticalcurrent density of Jc(5 K, 0 T) ∼ 3.2 × 106 A cm − 2. Such an electron beam annealing technique has potential for the fabrication of large-scaleMgB2 thin filmsas well as MgB2 wires and tapes.
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