Nanoimprint lithography (NIL) has stimulated great interest in both academic research andindustrial development due to its high resolution, high throughput and low costadvantages. Though NIL has been demonstrated to be very successful in replicatingnanoscale features, it also has its limitations as a general lithography technique. Itsfundamental moulding characteristics (i.e. physically displacing polymer materials)frequently lead to pattern defects when replicating arbitrary patterns, especially patternswith broad size distribution. To solve this problem, we have developed a combinednanoimprint and photolithography technique that uses a hybrid mould to achieve goodpattern definitions. In this work, we applied this technique to fabricate finger-shapednanoelectrodes, and demonstrated nanoscale pentacene organic thin film transistors(OTFTs). Methods of the hybrid mask–mould (HMM) fabrication and resultson the device electrical characteristics are provided. With combined advantagesof both photolithography and NIL, and the applicability to general nanoscaledevice and system fabrication, this method can become a valuable choice for lowcost mass production of micro- and nanoscale structures, devices and systems.
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