Abstract
AbstractWe have demonstrated that the photoalignment method could be used to control the structural anisotropy of pentacene films, an active semiconducting layer, in thin‐film transistors (TFTs) with conspicuously anisotropic electrical characteristics. The photoaligned pentacene films were characterized with respect to structure and morphology using X‐ray diffraction and atomic force microscopy. Compared to the pentacene films that are not controlled, a maximal 25‐times increase in field‐effect mobility (up to 0.75 cm V–1 s–1) has been achieved in the photoaligned pentacene‐based TFTs by aligning pentacene orientation parallel to the direction of current flow with the help of a photoaligned polyimide layer. Mobility anisotropic ratio in the range of 2.7–8.3 for the current flow parallel and perpendicular to the alignment of the photoaligned pentacene films have been observed for photoaligned pentacene‐based TFTs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
