Nonvolatile Memory Applications Research Articles

Switchable Photovoltaic Effect and Robust Nonlinear Optical Response in a High-Temperature Molecular Ferroelectric [C8N2H22][PbI4

Hybrid organic-inorganic molecular ferroelectrics (HOIMFs) have garnered significant attention for their potential applications in nonvolatile memory and spintronic devices. However, few efforts have been devoted to the photoelectric properties of lead halide molecular ferroelectrics, despite the fact that robust ferroelectricity and flexibility are desirable for thin-film photoelectric devices. Herein, we present a novel lead halide molecular ferroelectric [C8N2H22][PbI4] (1) synthesized hydrothermally. A polar monoclinic structure of 1 was solved by single-crystal X-ray diffraction and second-harmonic generation (SHG) tests. A direct band gap of 2.36 eV was confirmed by UV-vis spectrum and theoretical calculation. Hysteresis measurements demonstrated inherent room-temperature (RT) ferroelectricity in 1 with a spontaneous polarization (Ps) of 3.2 μC/cm2. The 1-based photoelectric device shows a notable photovoltaic (PV) effect with Voc ∼ 0.27 V, Jsc ∼ 38 nA/cm2 under AM 1.5 G illumination, and a rapid response time of ∼1.5 ms. A considerable enhancement in PV performance has been achieved by adjusting the ferroelectric polarization, resulting in a maximum Voc ∼ 0.75 V, Jsc ∼ 2.28 μA/cm2. Notably, 1 exhibits a rather large SHG signal, which is approximately 2.61-fold higher than that of KH2PO4 (KDP) upon a 1064 nm laser radiation. This study offers a bright avenue for lead halide molecular ferroelectrics as promising optoelectronic devices and SHG materials.

Tunable interfacial properties of monolayer GeSb2Te4 on metal surfaces

Abstract Atomically thin monolayer (ML) GeSb 2 Te 4 (GST) holds promising prospects in non-volatile memory applications because of its high non-homogeneous crystallization rate. In GST-based devices, the interaction between GST and metals is crucial, as it affects the electronic properties. Herein, based on first-principles calculations, we investigate the interaction and Schottky barrier height of contacts formed by the combination of ML GST with various metals. It is found that the interfaces of GST with Pt, Pd, Ir and W exhibit strong interaction, characterized by large binding energies ranging from 1.394 to 1.015 eV , and the interfaces between GST and Cu, Ag and Au display weak interaction. For the seven contacts, Ag and W form Ohmic contacts with ML GST, while Cu, Au, Pd, Ir, and Pt form n-type Schottky contacts, with Schottky barrier heights ranging from 0.029 to 0.353 eV . The strong Fermi level pinning at GST-metal interface is observed with a pinning factor of 0.378. Additionally, altering the interfacial distance and optimizing the layers of GST enable a transition from Ohmic contact to Schottky contact. These findings provide crucial guidance for the design and optimization of electronic devices based on phase change materials like GST.

GeTe/MoTe2 Van der Waals Heterostructures: Enabling Ultralow Voltage Memristors for Nonvolatile Memory and Neuromorphic Computing Applications.

Advanced electronic semiconducting Van der Waals heterostructures (HSs) are promising candidates for exploring next-generation nanoelectronics owing to their exceptional electronic properties, which present the possibility of extending their functionalities to diverse potential applications. In this study, GeTe/MoTe2 HS are explored for nonvolatile memory and neuromorphic-computing applications. Sputter-deposited Ag/GeTe/MoTe2/Pt HS cross-point devices are fabricated, and they demonstrate memristor behavior at ultralow switching voltages (VSET: 0.15V and VRESET: -0.14V) with very low energy consumption (≈30 nJ), high memory window, long retention time (104 s), and excellent endurance (105 cycles). Resistive switching is achieved by adjusting the interface between the Ag top electrode and the heterojunction switching layer. Cross-sectional transmission electron microscope images and conductive atomic force microscopy analysis confirm the presence of a conducting filament in the heterojunction switching layer. Further, emulating various synaptic functions of a biological synapse reveals that GeTe/MoTe2 HS can be utilized for energy-efficient neuromorphic-computing applications. A multilayer perceptron is implemented using the synaptic weights of the Ag/GeTe/MoTe2/Pt HS device, revealing high pattern accuracy (81.3%). These results indicate that HS devices can be considered a potential solution for high-density memory and artificial intelligence applications.

Vertical‐Switching Conductive Bridge Random Access Memory with Adjustable Tunnel Gap and Improved Switching Uniformity Using 2D Electron Gas

AbstractOwing to the high reactivity and diffusivity of Ag and Cu ions, controlling the atomic filament formation and rupture processes in conductive bridge random‐access memory (CBRAM) is challenging. In this study, it is demonstrated that by using a 2D electron gas (2DEG) as the bottom electrode (BE) in a vertical‐switching CBRAM (V‐CBRAM), filament formation and rupture can be effectively managed and the tunnel gap distance created by partial filament formation can be adjusted. The 2DEG BE induces partial filament formation by limiting the number of electrons required for this process in the V‐CBRAM device, as verified via current fitting to the quantum point contact model. Varying the electron concentration and activation energy for electrons trapped in the 2DEG, when paired with various programming voltages, leads to transitions in the device resistance state via changes in the distance of the tunnel gap. This tunnel‐gap‐tunable 2DEG V‐CBRAM device, which exhibits superior switching uniformity, can be employed for nonvolatile memory applications in the sub‐G0 conductance regime, such as 3‐bit multilevel cells and selector‐less memory.

Electrical conduction of ferroelectric domains and domain walls in polycrystalline BiFeO3 and Bi5Ti3FeO15 thin films

The unique properties of domain wall conductivity have garnered significant interest for their potential application in non-volatile ferroelectric domain wall memory. In this study, we investigated the electrical conduction within ferroelectric domains and domain walls of polycrystalline BiFeO3 (BFO) and Bi5Ti3FeO15 (BTFO) thin films, which were deposited on Pt/Ta/glass substrates via pulsed laser deposition. BFO thin film consistently demonstrated a (111) orientation, while BTFO thin film exhibited mixed crystallinity, featuring both c-axis and a-axis orientations. This mixed crystallinity in BTFO thin film contributed to a higher remanent polarization of 38.2 μC/cm2 compared to 20.3 μC/cm2 in BFO thin film, which is attributed to the a-oriented crystallinity within the Bi-layered perovskite structure of BTFO thin film. Additionally, BTFO thin film displayed a greater prevalence of 90° domain walls, which enhanced electrical conduction due to charge accumulation, particularly when compared to 180° domain walls. A significant change in resistance was observed when the domain wall was present versus absent, with a more pronounced effect in the BTFO capacitor compared to the BFO capacitor. This is attributed to the higher domain wall conductivity in BTFO thin film, confirming their superiority for use in ferroelectric capacitor devices that leverage domain wall conductivity.

Ferroelectric tunnel junctions based on a HfO2/dielectric composite barrier

The ferroelectric tunnel junction (FTJ), which possesses a simple structure, low power consumption, high operation speed, and nondestructive reading, has attracted great attention for the application of next-generation nonvolatile memory. The complementary metal–oxide–semiconductor-compatible hafnium oxide (HfO2) ferroelectric thin film found in the recent decade is promising for the scalability and industrialization of FTJs. However, the electric performance, such as the tunneling electroresistance (TER) effect, of the current HfO2-based FTJs is not very satisfactory. In this work, we propose a type of high-performance HfO2-based FTJ by utilizing a ferroelectric/dielectric composite barrier strategy. Using density functional theory calculations, we study the electronic and transport properties of the designed Ni/HfO2/MgS/Ni (001) FTJ and demonstrate that the introduction of an ultra-thin non-polar MgS layer facilitates the ferroelectric control of effective potential barrier thickness and leads to a significant TER effect. The OFF/ON resistance ratio of the designed FTJ is found to exceed 4 × 103 based on the transmission calculation. Such an enhanced performance is driven by the resonant tunneling effect of the ON state, which significantly increases transmission across the FTJ when the ferroelectric polarization of HfO2 is pointing to the non-polar layer due to the aroused electron accumulation at the HfO2/MgS interface. Our results provide significant insight for the understanding and development of the FTJs based on the HfO2 ferroelectric/non-polar composite barrier.

Electronic and Transport Engineering of A-Type Antiferromagnets with Ferroelectric Sandwich Structure: Toward Multistate Nonvolatile Memory Applications.

Achieving higher-order multistates with mutual interstate switching at the nanoscale is essential for high-density storage devices; yet, it remains a significant challenge. Here, we demonstrate that integrating A-type antiferromagnetic semiconductors sandwiched between ferroelectric layers is an effective strategy to achieve high-performance multistate data storage. Taking the Sc2CO2/VSi2P4 bilayer (bi-VSi2P4)/Sc2CO2 van der Waals multiferroic heterostructure as an example, our first-principles calculations show that by switching the polarization direction of the upper and bottom ferroelectric Sc2CO2 layers, antiferromagnetic bi-VSi2P4 can exhibit four distinct states with different band structures. The intriguing band structure engineering stems from the polarization-field-induced band shift and interface charge transfer. Accordingly, the proposed Sc2CO2/bi-VSi2P4/Sc2CO2-based multiferroic device can achieve four different resistance states, accompanied by fully spin-polarized currents and giant tunneling electroresistance ratios. Our results propose a viable strategy for realizing nonvolatile electrical control of antiferromagnets at the nanoscale and provide insights into the development of advanced memories.

Organic Ferroelectrics for Regulation of Electronic and Ionic Transport Toward Neuromorphic Applications

AbstractOrganic ferroelectrics (OFEs) have been of significant research interest not only for nonvolatile memory applications but also for their unique material characteristics such as mechanical softness, biocompatibility, facile processibility, and chemically tailorable functionalities that inorganic counterparts are hard to achieve. Despite these promising merits, the utilization of OFEs has mainly focused on simply demonstrating flexible nonvolatile memories wherein modulation of electronic conductance is of interest. Recent studies indicate that the applicability of OFEs can be further extensive, particularly when combined with electronic, ionic, and mixed electronic‐ionic conducting media. Herein, we discuss that OFEs can be employed for the regulation of electronic as well as ionic charges, and lead to unique device behaviors. First, we comprehensively introduce organic ferroelectric materials classified with their structures and compositions. Next, we discuss recent studies where organic ferroelectricity has been incorporated with electronic, ionic, or mixed transport system to resolve issues in devices and endow multifunctionality, which are promising for neuromorphic computing and sensory memory systems. Finally, insight into the research direction of OFEs is provided, and what hurdles shall be overcome for real‐world applications.

Giant Tunneling Electro‐Resistance in Ultrathin Ferroelectric Tunnel Junctions: The Interface Barrier Gain Mechanism

AbstractUltrathin ferroelectric tunnel junctions (FTJs) hold considerable promise for next‐generation, high‐speed, low‐power, and high‐density nonvolatile memory applications. Achieving a substantial tunneling electro‐resistance (TER) remains a challenge as the ferroelectric layer is thinned to nanoscale dimensions, often resulting in a diminished or lost polarization. An innovative interface barrier gain mechanism is introduced, employing interface electronic state modulation to precisely control the size of an additional interface barrier. This strategy lessens the dependency of the tunneling barrier on ferroelectric polarization strength, facilitating a remarkable TER even at ferroelectric thicknesses as minimal as ≈1 nm. The focus is on composite FTJs using In2Se3/MTe2 (M = Mo, W), where the inclusion of an MTe2 monolayer disrupts the asymmetric electrode configuration. The weak ferroelectric polarization reversal of the In2Se3 monolayer effectively modulates the electronic state coupling at the In2Se3/MTe2 interface. This modulation leads to variations in the width and height of the Schottky barrier at the heterojunction‐electrode interface corresponding with the ferroelectric polarization reversal, establishing a beneficial Ohmic contact in the “on” state and resulting in an exponential TER increase up to 5.4 × 106%. This work introduces a universal mechanism to overcome the thickness limitations traditionally associated with enhancing TER, marking a significant advancement in the development of ultrathin ferroelectric nonvolatile devices.

Ni3C nanosheets and PVA nanocomposite based memristor for low-cost and flexible non-volatile memory devices

Two-dimensional (2D) MXenes have gained extensive attention in the field of memristors due to their high ion mobility, chemical stability and tunable electrical and surface properties. Moreover, MXenes have tunable interlayer bonding which enables enhancement in memristor performance. In this work, we synthesize a novel nanocomposite of Ni3C nanosheets and polyvinyl alcohol (PVA) and fabricate a flexible memristor with Ag/Ni3C-PVA/ITO/PET configuration for non-volatile memory applications. Ni3C nanosheets were synthesized from Ni-MAX (Ni3AlC2) through a solvothermal etching and exfoliation process. The nanosheet like structure of Ni3C is confirmed through Scanning Electron Microscopy (SEM) and Transmission Electron microscopy (TEM). Characterization techniques like X-ray diffraction (XRD), Raman spectroscopy and Fourier Transform Infrared Spectroscopy (FTIR) reveal the crystalline phases, surface functional groups and chemical bonds present in Ni3C nanosheets and Ni3C-PVA nanocomposite. The memristor was fabricated through a facile low cost solution processed based fabrication technique. The Ag/Ni3C-PVA/ITO/PET memristor exhibits bipolar non-volatile switching characteristics. The device with optimised mass ratio of 4:3 (Ni3C: PVA) shows a decent off/on ratio of 2.09 × 102, long retention time of 104 s, and an endurance of 102 DC cycles. The SET voltage of the as-fabricated device is 2.8 V and the RESET voltage is −5.33 V. The flexible memristor exhibits outstanding mechanical robustness over 500 bending cycles. The high charge carrier mobility of Ni3C results in lower switching voltage and the dielectric property of PVA improves data retention and off/on ratio of the memristor. The resistive switching behaviour is explained through conductive metallic bridge mechanism. The conduction mechanism follows Ohmic conduction in ON state and trap controlled space charge limited current (TCSCLC) mechanism in OFF state. The results demonstrate that the nanocomposite with its superior resistive switching effects is suitable for cost-effective, high-performance, flexible non-volatile memory devices.

Intrinsic Out-Of-Plane and In-Plane Ferroelectricity in 2D AgCrS2 with High Curie Temperature.

2D ferroelectric materials have attracted extensive research interest due to potential applications in nonvolatile memory, nanoelectronics and optoelectronics. However, the available 2D ferroelectric materials are scarce and most of them are limited by the uncontrollable preparation. Herein, a novel 2D ferroelectric material AgCrS2 is reported that are controllably synthesized in large-scale via salt-assist chemical vapor deposition growth. By tuning the growth temperature from 800 to 900°C, the thickness of AgCrS2 nanosheets can be precisely modulated from 2.1 to 40nm. Structural and nonlinear optical characterizations demonstrate that AgCrS2 nanosheet crystallizes in a non-centrosymmetric structure with high crystallinity and remarkable air stability. As a result, AgCrS2 of various thicknesses display robust ferroelectric polarization in both in-plane (IP) and out-of-plane (OOP)directions with strong intercorrelation and high ferroelectric phase transition temperature (682 K). Theoretical calculations suggest that the ferroelectricity in AgCrS2 originates from the displacement of Ag atoms in AgS4 tetrahedrons, which changes the dipole moment alignment. Moreover, ferroelectric switching is demonstrated in both lateral and vertical AgCrS2 devices, which exhibit exotic nonvolatile memory behavior with distinct high and low resistance states. This study expands the scope of 2D ferroelectric materials and facilitates the ferroelectric-based nonvolatile memory applications.

Conduction mechanisms analysis of ZrO2-based electrochemical metallization RRAM in different RESET modes

Resistive random access memory (RRAM) based on electrochemical metallization (ECM) is a promising candidate for future nonvolatile memory applications. This paper discusses the resistive switching (RS) behavior and conduction mechanism in the ZrO2-based ECM nonvolatile memory devices. Whether Cu or Ni is used as the top electrode, two different types of I-V curves are found in the same device, representing different RESET modes. The I–V fitting analysis suggests that one RRAM cell can follow two significantly different conduction mechanisms under two types of RESET modes. Under sudden rupture mode, conduction at the high resistance state (HRS) is dominated by a space-charge-limited conduction (SCLC). In contrast, under slow dissolution mode, the devices at HRS tend to show an Ohmic conduction mechanism. These phenomena can be explained by a physical model based mainly on Joule heat or electric field, which is related to the degree of dissolution and rupture of multiple conductive filaments (CFs). Furthermore, the electrical field simulation results based on the solid electrolyte theory by MATLAB further demonstrate the coexistence of two conduction mechanisms in Cu (or Ni)/ZrO2/Pt devices HRS. This paper provides a direction for better understanding the conversion mechanism of ECM RRAM, which is of great significance for the further development of RRAM.

Theoretical study of metal contacts to the monolayer ferroelectric material CuInP2S6 and its device applications

Two-dimensional (2D) ferroelectric materials exhibit significant potential for applications in nonvolatile memory and device miniaturization. In the device design stage, it is essential to consider the compatibility between 2D ferroelectric materials and three-dimensional (3D) metal. However, the interface between them introduces complex interactions that could impact the device's performance. In this work, based on the first-principles method, we simulate several 3D metal–2D ferroelectric material contact systems by utilizing different 3D metals in contact with the 2D ferroelectric monolayer CuInP2S6 (CIPS). By calculating the electronic structures of the systems, we find that the Cd(001)–CIPS configuration is the most stable structure, followed by the Ag(111)–CIPS and Au(111)–CIPS systems. Both the Cd(001)–CIPS and Ag(111)–CIPS systems undergo a transition from Schottky to Ohmic contact. Finally, we theoretically design a ferroelectric tunnel junction (FTJ) based on the Cd(001)–CIPS contact system, achieving a tunneling electroresistance ratio of 2.394×105% and a remarkably low resistance–area product of 0.78 Ω·μm2, which makes the proposed FTJ superior to the conventional 3D FTJ. This work provides some insights for the design of nonvolatile storage devices.

Ultralow electric-field poling of LiNbO3 single-crystal devices

The LiNbO3 (LNO) single crystal receives wide applications in nonvolatile memories, surface acoustic wave devices, and electro-optic modulators. However, engineering of antiparallel domain patterns within micrometer-sized devices generally requires a poling voltage more than a few thousands of volts. The high poling voltage could invoke dielectric breakdown. Here, we found an effective method to increase the local electric field significantly for domain nucleation at the interfaces of an etched LNO mesa in contact to two concave side electrodes, while the electric field across the protruding intra-electrode area can be lower by 10 times after the metal diffusion at the surface. Subsequent piezoresponse force microscopy mapping shows the nucleating domains to grow up through the entire intra-electrode area. This method is universal and analogous to other ferroelectric devices for the realization of low-voltage operations.

Improvement of switching uniformity in TiO2-based resistive random access memory with graphene oxide embedded film

TiO2-based resistive random access memory (RRAM) devices has the potential to fabricating nonvolatile memory applications. However, the memories based on TiO2 have severe problems like large resistive switching parameter fluctuations, poor cycling endurance and so on, which can be a limitation of the device in practical applications. Graphene oxide (GO) is a novel material that has attracted much attention and is often applied to enhance the performance of memories due to its own special properties. In this work, two types of bilayer structure based on TiO2 for RRAM devices were fabricated. The significant improvement in uniformity of operating voltages and high HRS/LRS ratio of the TiO2-based RRAM were realized by inserting a two-dimensional GO film between TiO2 and FTO. The presence of the GO film would prevent the ion exchange between the electrodes and the switching layer as well as its insulating properties. The conduction mechanisms of all the devices in low and high resistance states were dominant by the Ohmic conduction mechanism and the space charge limited conduction mechanism, respectively. This research manifests the promising potential of two-dimensional GO embedded layer for improving resistive switching performance of RRAMs.

Enhanced resistive switching behaviors of organic resistive random access memory devices by adding polyethyleneimine interlayer

Organic nonvolatile memory devices have garnered significant attention as next-generation electrical memory units owing to their potential for low-cost and straightforward fabrication through a solution process. In this study, we successfully fabricated fully solution-processed organic resistive random access memory (RRAM) devices using poly(3-hexylthiophene-2,5-diyl) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) as the resistive switching (RS) layer, with poly(3,4-ethylene-dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) employed as the top electrode. Additionally, to enhance performance further, a polyethyleneimine (PEIE) interlayer was introduced between the bottom electrode and the P3HT:PCBM RS layer. The resulting organic RRAM devices with the PEIE interlayer exhibited bipolar resistive switching, with improved endurance increasing from 50 to 100 cycles, a retention time of 103 s, and a low SET voltage of 0.7 V. The organic RRAM devices featuring the PEIE interlayer demonstrated superior RS performance attributed to the higher Schottky barrier at the interface between the bottom electrode and the active switching layer, creating an asymmetric structure. I–V curve fitting confirmed that the potential switching mechanism involved Schottky emission in the high-resistance state and Ohmic conduction in the low-resistance state. Our findings suggest that organic RRAM devices with a PEIE interlayer hold promise for stable nonvolatile memory applications.

Sol-Gel Derived ZnO Thin Films with Nonvolatile Resistive Switching Behavior for Future Memory Applications

Herein we report on a facile sol-gel spin-coating technique to fabricate ZnO thin films that grow preferentially along the (002) plane on FTO substrates. By employing the magnetron sputtering technique to deposit a tungsten (W) top metal electrode onto these ZnO thin films, we successfully realize a W/ZnO/FTO memory device that exhibits self-rectifying and forming-free resistive switching characteristics. Notably, the as-prepared device demonstrates impressive nonvolatile and bipolar resistive switching behavior, with a high resistance ratio (RHRS/RLRS) exceeding two orders of magnitude at a reading voltage of 0.1 V. Moreover, it exhibits ultralow set and reset voltages of approximately +0.5 V and −1 V, respectively, along with exceptional durability. In terms of carrier transport properties, the low resistance state of the device is dominated by ohmic conduction, whereas the high resistance state is characterized by trap-controlled space-charge-limited current conduction. This work highlights the potential of the ZnO-based W/ZnO/FTO memory device as a promising candidate for future high-density nonvolatile memory applications.

Electric field enhancement of the superconducting spin-valve effect via strain-transfer across a ferromagnetic/ferroelectric interface

In a ferromagnet/superconductor/ferromagnet (F/S/F) superconducting spin-valve (SSV), a change in the magnetization alignment of the two F layers modulates the critical temperature (Tc) of the S layer. The Tc-switching effect (the SSV effect) is based on the interplay between superconductivity and magnetism. The fast and large resistive switching associated with Tc-switching is suitable for nonvolatile cryogenic memory applications. However, the external magnetic field-based operation of SSVs is hindering their miniaturization, and therefore, electric field control of the SSV effect is desired. Here, we report epitaxial growth of a La0.67Ca0.33MnO3/YBa2Cu3O7/La0.67Ca0.33MnO3 SSV on a piezo-electric [Pb(Mg0.33Nb0.67)O3]0.7-[PbTiO3]0.3 (001) substrate and demonstrate electric field control of the SSV effect. Electric field-induced strain-transfer from the piezo-electric substrate increases the magnetization and Tc of the SSV and leads to an enhancement of the magnitude of Tc-switching. The results are promising for the development of magnetic-field-free superconducting spintronic devices, in which the S/F interaction is not only sensitive to the magnetization alignment but also to an applied electric field.

Thermal optimization of two-terminal SOT-MRAM

While magnetoresistive random-access memory (MRAM) stands out as a leading candidate for embedded nonvolatile memory and last-level cache applications, its endurance is compromised by substantial self-heating due to the high programming current density. The effect of self-heating on the endurance of the magnetic tunnel junction (MTJ) has primarily been studied in spin-transfer torque (STT)-MRAM. Here, we analyze the transient temperature response of two-terminal spin–orbit torque (SOT)-MRAM with a 1 ns switching current pulse using electro-thermal simulations. We estimate a peak temperature range of 350–450 °C in 40 nm diameter MTJs, underscoring the critical need for thermal management to improve endurance. We suggest several thermal engineering strategies to reduce the peak temperature by up to 120 °C in such devices, which could improve their endurance by at least a factor of 1000× at 0.75 V operating voltage. These results suggest that two-terminal SOT-MRAM could significantly outperform conventional STT-MRAM in terms of endurance, substantially benefiting from thermal engineering. These insights are pivotal for thermal optimization strategies in the development of MRAM technologies.

Multi‐Functional Ferroelectric Domain Wall Nanodevices for In‐Memory Computing and Light Sensing

AbstractIn‐memory computing and sensing can break through the limit of the traditional Von Neumann architecture where information storing and computing units are separated. Recently the topographic creation of a ferroelectric domain wall in separation of two antiparallel domains in LiNbO3 single‐crystal films integrated with the Si substrate has been the focus of such research. Here, the additional freedom of the light stimulus is reported to modulate the domain wall current significantly, enabling applications in nonvolatile domain wall memory, photodetector, and image recognition processor. These measurements shows the fantastic photosensitivity of 2D domain walls where the photocurrent varies nonlinearly against the accumulative pulse number. With this observation, an associated learning model is constructed to stimulate neuromorphic computing (with a recognition accuracy of 90%) using an artificial neuromorphic network of domain walls. The research promotes the multifold development of artificial intelligence using domain‐wall nanodevices sensitive to both optical and electrical stimulus.