Applications In Nanoelectronics Research Articles

Observation of voltage dependent negative differential resistance (NDR) in SnS2-GO nanocomposites

This study investigates the structural, optical, and electrical properties of tin disulfide (SnS2) and SnS2-graphene oxide (GO) nanosheets synthesized via chemical bath deposition method (CBD). Structural characterization confirms the formation of hexagonal crystal phases with nanosheet morphology. It shows a well distribution of nanosheet average square sizes of 10 nm for SnS2 and 6 nm for SnS2-GO. Optical analysis shows blue shifts in absorption edges compared to bulk SnS2, attributed to quantum confinement effects. Photoluminescence emission peaks exhibit different energy levels in SnS2-GO originated to native defects. The composites show a sharp reduced of PL intensity due to enhanced charge carrier separation. Electrical measurements on SnS2-GO thin films demonstrate negative differential resistance (NDR) behavior in both planar and sandwich contact configurations, suggesting electron injection/extraction mechanisms. The NDR phenomenon exhibits a dependence on voltage scan rate, indicating the involvement of electronic and ionic elements in charge transport mechanisms. Overall, this study provides insights into the NDR properties of SnS2-GO nanocomposite, laying the groundwork for their potential applications in optoelectronics and nanoelectronics.

Engineered Nanotopographies Induce Transient Openings in the Nuclear Membrane

AbstractMaterials with engineered nano‐scale surface topographies, such as nanopillars, nanoneedles, and nanowires, mimic natural structures like viral spike proteins, enabling them to bypass biological barriers like the plasma membrane. These properties have led to applications in nanoelectronics for intracellular sensing and drug delivery platforms, some of which are already in clinical trials. Here, evidence is present that nanotopographic materials can induce transient openings in the nuclear membranes of various cell types without penetrating the cells, breaching the nucleo‐cytoplasmic barrier, and allowing uncontrolled molecular exchange across the nuclear membrane. These openings, induced by nanoscale curvature, are temporary and repaired through the Endosomal Sorting Complexes Required for Transport (ESCRT)‐mediated mechanisms. The findings suggest a potential for nano\topographic materials to temporarily breach the nuclear membrane with potential applications in direct nuclear sensing and delivery.

Fabrication and Unraveling the Morphological, Structural, Optical and Dielectric Features of PMMA-SiO2/CuO Promising Ternary Nanostructures for Nanoelectronic and Photonic Applications

Fabrication and Unraveling the Morphological, Structural, Optical and Dielectric Features of PMMA-SiO2/CuO Promising Ternary Nanostructures for Nanoelectronic and Photonic Applications

Manipulating the electronic and spintronic properties in PtS2/MoTe2 heterostructure with strain

In this work, the strain engineering on the electronic and spintronic properties of PtS2/MoTe2 heterostructure is investigated by first-principle calculations. Based on the energy minimum principle, the most stable configuration of the PtS2/MoTe2 heterostructure is recognized. The mechanisms for the evolution of the band structures under different strains are analyzed by the atomic orbital projected band structures. Furthermore, a Rashba type spin texture of PtS2/MoTe2 heterostructure is predicted, with a formation mechanism revealed through atomic orbital projected spin textures. The strain tunable electronic and spintronic properties of PtS2/MoTe2 heterostructure hold great promise in applications of spintronics and nanoelectronics.

Quasi-equilibrium growth of inch-scale single-crystal monolayer α-In2Se3 on fluor-phlogopite

Epitaxial growth of two-dimensional (2D) materials with uniform orientation has been previously realized by introducing a small binding energy difference between the two locally most stable orientations. However, this small energy difference can be easily disturbed by uncontrollable dynamics during the growth process, limiting its practical applications. Herein, we propose a quasi-equilibrium growth (QEG) strategy to synthesize inch-scale monolayer α-In2Se3 single crystals, a semiconductor with ferroelectric properties, on fluor-phlogopite substrates. The QEG facilitates the discrimination of small differences in binding energy between the two locally most stable orientations, realizing robust single-orientation epitaxy within a broad growth window. Thus, single-crystal α-In2Se3 film can be epitaxially grown on fluor-phlogopite, the cleavage surface atomic layer of which has the same 3-fold rotational symmetry with α-In2Se3. The resulting crystalline quality enables high electron mobility up to 117.2 cm2 V−1 s−1 in α-In2Se3 ferroelectric field-effect transistors, exhibiting reliable nonvolatile memory performance with long retention time and robust cycling endurance. In brief, the developed QEG method provides a route for preparing larger-area single-crystal 2D materials and a promising opportunity for applications of 2D ferroelectric devices and nanoelectronics.

Phase-Change Stamp with Highly Switchable Adhesion and Stiffness for Damage-Free Multiscale Transfer Printing.

Transfer printing is a technology widely used in the production of flexible electronics and vertically stacked devices, which involves the transfer of predefined electronic components from a rigid donor substrate to a receiver substrate with a stamp, potentially avoiding the limitations associated with lithographic processes. However, the stamps typically used in transfer printing have several limitations related to unwanted organic solvents, substantial loading, film damage, and inadequate adhesion switching ratios. This study introduces a thermally responsive phase-change stamp for efficient and damage-free transfer printing inspired by the adhesion properties observed during water freezing and ice melting. The stamp employs phase-change composites and simple fabrication protocols, providing robust initial adhesion strength and switchability. The underlying mechanism of switchable adhesion is investigated through experimental and numerical studies. Notably, the stamp eliminates the need for extra preload by spontaneously interlocking with the ink through in situ melting and crystallization. This minimizes ink damage and wrinkle formation during pickup while maintaining strong initial adhesion. During printing, the stamp exhibits a sufficiently weak adhesion state for reliable and consistent release, enabling multiscale, conformal, and damage-free transfer printing, ranging from nano- to wafer-scale. The fabrication of nanoscale short-channel transistors, epidermal electrodes, and human-machine interfaces highlights the potential of this technique in various emerging applications of nanoelectronics, nano optoelectronics, and soft bioelectronics.

Ameliorating and Tailoring The Morphological, Structural, and Dielectric Characteristics of SiO2 /NiO Futuristic Nanocomposites Doped PVA-PEG for Nanoelectronic and Energy Storage Applications

Ameliorating and Tailoring The Morphological, Structural, and Dielectric Characteristics of SiO2 /NiO Futuristic Nanocomposites Doped PVA-PEG for Nanoelectronic and Energy Storage Applications

Physical confinement versus adsorption driven reconstruction: The case of sulfate anion interaction with vicinal Cu(111) surfaces

Nano-electrochemistry, i.e., the research of the properties of nano-(structured) electrodes and their influence on electrochemical processes when immersed inside an electrolyte, represents a hot topic in view of applications in nano-electronics, electro-catalysis and energy storage devices. The role of physical confinement in the electrochemical fabrication and performances of the respective systems have been recently addressed in the context of metal-organic networks on surfaces, but rarely of nano-structured bare metal surfaces, for instance, regularly stepped (vicinal) surfaces. In this work we investigate the interplay between physical confinement and adsorbate induced restructuring by the electrochemical adsorption of sulfate anions on the flat and two distinctly different vicinal Cu(111) surfaces. Sulfate adsorption on the flat Cu(111) surface is known to create a long-range ordered Moiré-superstructure with lattice parameters in the 2–4 nm range due to an expansion of the topmost layer of copper atoms with respect to the underlying crystal planes. This restructuring is also observed on a vicinal Cu(111) surface whose original terrace width is considerably smaller than the lattice vectors of the sulfate induced Moiré-structure. The results clearly indicate not only that the Moiré formation lifts the physical confinement imposed by the initial terrace width, but also shine more light on the Moiré formation process itself. Such adsorbate induced restructuring, of course, depends on the respective adsorbate – electrode combination, but must, in principle, always be taken into account in order to understand electrochemical processes at nano-structured (and nano-sized) electrode surfaces.

Preparation and Assembly of Carbon Nanotube/Silica Core-Shell Nanowires to Realize High-Density and Well-Aligned Nanotube Arrays with Uniform and Tunable Pitch

This study introduces a novel method to fabricate high-density, well-aligned arrays of carbon nanotubes (CNTs) with tunable pitch, utilizing a core-shell nanowire structure of CNTs and silica. The approach involves a modified Stober process to achieve controlled deposition of silicon dioxide around individual CNTs, forming robust core-shell nanowires. By optimizing the Stober process, the shell size can be precisely controlled down to sub 10nm scale while maintaining the individualized nature of the CNTs. Densely packed and precisely aligned CNT arrays are created using Langmuir-Schaefer process. After assembly, the silica shell, acting as a physical spacer, can be easily removed by HF etching, exposing the CNTs while maintaining their alignment. The developed high-density, well-aligned CNT arrays with tunable pitch show significant promise for applications in nanoelectronics, sensors, and other emerging technologies. This methodology offers a robust and scalable approach for CNT array fabrication, opening avenues for tailoring array properties to meet specific application requirements.

Effects of vacancy defects and atomic doping on the electronic and magnetic properties of puckered penta-like PdPSe monolayer: an Ab initio study

The experimental knowledge of two-dimensional penta-like PdPSe monolayer is largely based on a recent publication (Liet al2021Adv. Mater. 2102541). Therefore, the aim of our research is consequently to explore the effect of vacancy defects and substitutional doping on the electronic properties of the novel penta-PdPSe monolayer by using first-principles calculations. Penta-like PdPSe is a semiconductor with an indirect bandgap of 1.40 eV. We show that Pd and Se vacancy defected structures are semiconductors with band gaps of 1.10 eV and 0.95 eV respectively. While P single vacancy and double vacancy defected structures are metals. The doping with Ag (at Pd site) and Si (at P site) convert the PdPSe to nonmagnetic metallic monolayer while the doping with Rh (at Pd site), Se (at P site) and As (at site Se) convert it to diluted magnetic semiconductors with the magnetic moment of 1µB. The doping with Pt (at the Pd site), As (at the P site), S and Te (at Se site) are indirect semiconductors with a bandgap of ∼1.2 eV. We undertook this theoretical study to inspire many experimentalists to focus on penta-like PdPSe monolayer growth incorporating different impurities and by defect engineering to tune the novel two dimensional materials (PdPSe) properties for the advanced nanoelectronic application.

Intrinsic Out-Of-Plane and In-Plane Ferroelectricity in 2D AgCrS2 with High Curie Temperature.

2D ferroelectric materials have attracted extensive research interest due to potential applications in nonvolatile memory, nanoelectronics and optoelectronics. However, the available 2D ferroelectric materials are scarce and most of them are limited by the uncontrollable preparation. Herein, a novel 2D ferroelectric material AgCrS2 is reported that are controllably synthesized in large-scale via salt-assist chemical vapor deposition growth. By tuning the growth temperature from 800 to 900°C, the thickness of AgCrS2 nanosheets can be precisely modulated from 2.1 to 40nm. Structural and nonlinear optical characterizations demonstrate that AgCrS2 nanosheet crystallizes in a non-centrosymmetric structure with high crystallinity and remarkable air stability. As a result, AgCrS2 of various thicknesses display robust ferroelectric polarization in both in-plane (IP) and out-of-plane (OOP)directions with strong intercorrelation and high ferroelectric phase transition temperature (682 K). Theoretical calculations suggest that the ferroelectricity in AgCrS2 originates from the displacement of Ag atoms in AgS4 tetrahedrons, which changes the dipole moment alignment. Moreover, ferroelectric switching is demonstrated in both lateral and vertical AgCrS2 devices, which exhibit exotic nonvolatile memory behavior with distinct high and low resistance states. This study expands the scope of 2D ferroelectric materials and facilitates the ferroelectric-based nonvolatile memory applications.

Structural changes in Ge1−xSnx and Si1−x−yGeySnx thin films on SOI substrates treated by pulse laser annealing

Ge1−xSnx and Si1−x−yGeySnx alloys are promising materials for future opto- and nanoelectronics applications. These alloys enable effective bandgap engineering, broad adjustability of their lattice parameter, exhibit much higher carrier mobility than pure Si, and are compatible with the complementary metal-oxide-semiconductor technology. Unfortunately, the equilibrium solid solubility of Sn in Si1−xGex is less than 1% and the pseudomorphic growth of Si1−x−yGeySnx on Ge or Si can cause in-plane compressive strain in the grown layer, degrading the superior properties of these alloys. Therefore, post-growth strain engineering by ultrafast non-equilibrium thermal treatments like pulse laser annealing (PLA) is needed to improve the layer quality. In this article, Ge0.94Sn0.06 and Si0.14Ge0.8Sn0.06 thin films grown on silicon-on-insulator substrates by molecular beam epitaxy were post-growth thermally treated by PLA. The material is analyzed before and after the thermal treatments by transmission electron microscopy, x-ray diffraction (XRD), Rutherford backscattering spectrometry, secondary ion mass spectrometry, and Hall-effect measurements. It is shown that after annealing, the material is single-crystalline with improved crystallinity than the as-grown layer. This is reflected in a significantly increased XRD reflection intensity, well-ordered atomic pillars, and increased active carrier concentrations up to 4 × 1019 cm−3.

Phonon transport in vacancy induced defective stanene/hBN van der Waals heterostructure

In this study, Non-Equilibrium Molecular Dynamics (NEMD) simulation is employed to investigate the phonon thermal conductivity (PTC) of Sn/hBN van der Waals heterostructures with different vacancy-induced defects. We deliberately introduce three types of vacancies in Sn/hBN bilayer point vacancies, bivacancies, and edge vacancies at various concentrations ranging from 0.25% to 2%, to examine their effects on PTC across temperatures from 100 K to 600 K. The key findings of our work are (i) PTC declines monotonically with increasing vacancy concentration for all types of vacancies, with a maximum reduction of ∼62% observed at room temperature compared to its pristine form. (ii) The position of defects has an impact on PTC, with a larger decrease observed when defects are present in the hBN layer and a smaller decrease when defects are in the Sn layer. (iii) The type of vacancy also influences PTC, with point vacancies causing the most substantial reduction, followed by bivacancies, and edge vacancies having the least effect. A 2% defect concentration results in a ∼62% decrease in PTC for point vacancies, ∼51% for bivacancies, and ∼32% for edge vacancies. (iv) Finally, our results indicate that for a given defect concentration, PTC decreases as temperature increases. The impact of temperature on thermal conductivity is less pronounced compared to the effect of vacancies for the defective Sn/hBN bilayer. The presence of vacancies and elevated temperatures enhance phonon-defect and phonon–phonon scattering, leading to changes in the phonon density of states (PDOS) profile and the distribution of phonons across different frequencies of Sn/hBN bilayer, thus affecting its thermal conductivity. This work offers new insights into the thermal behavior of vacancy-filled Sn/hBN heterostructures, suggesting potential pathways for modulating thermal conductivity in bilayer van der Waals heterostructures for applications in thermoelectric, optoelectronics, and nanoelectronics in future.

Engineering the electronic properties of MoTe2 via defect control

ABSTRACT The remarkable electronic properties of monolayer MoTe2 make it a very adaptable material for use in optoelectronic and nano-electronic applications. MoTe2 growth often exhibits intrinsic defects, which significantly influence the material’s characteristics. In this work, we conducted a thorough investigation of the electronic characteristics of intrinsic defects, including point defects, in monolayer MoTe2 using first-principles calculations based on density functional theory (DFT). Our findings indicate that the presence of point defects leads to the formation of n-type properties as the Fermi level situates above the conduction band. Our first-principles density functional theory calculation revealed an appearance of donor level in the band gap close to the conduction band in MoTe2. Our study signifies that the formation energy of a vacancy in a Te atom is lower than that of both a vacancy in a Mo atom and two vacancies in Te atom. This suggests that during the synthesis process, it is more probable for Te atom vacancies to be created. A defect in the pristine monolayer of MoTe2 leads to a slight decrease in the band gap, causing a transition from a direct band gap semiconductor to an indirect band gap semiconductor. The results of our study indicate that the presence of vacancy defects may modify the electronic properties of monolayer MoTe2, suggesting its potential as a new platform for electronic applications. Hence, our analysis offers significant theoretical backing for defect engineering in MoTe2 monolayers and other 2D materials, a critical aspect in the advancement of nanoscale devices with the desired functionality.

Electron-phonon interaction, magnetic phase transition, charge density waves, and resistive switching in VS2 and VSe2 revealed by Yanson point-contact spectroscopy

VS2 and VSe2 have attracted particular attention among the transition metals dichalcogenides because of their promising physical properties concerning magnetic ordering, charge density wave (CDW), emergent superconductivity, etc., which are very sensitive to stoichiometry and dimensionality reduction. Yanson point-contact (PC) spectroscopic study reveals metallic and nonmetallic states in VS2 PCs, as well as a magnetic phase transition, was detected near 20 K. The rare PC spectra, where the magnetic phase transition was not visible, show a broad maximum of around 20 mV, likely connected with electron-phonon interaction (EPI). The PC spectra of VSe2 demonstrate metallic behavior, which allowed us to detect features associated with EPI and CDW transition. The Kondo effect appeared for both compounds, apparently due to interlayer vanadium ions. Besides, the resistive switching was observed in PCs on VSe2 between a low resistive, mainly metallic-type state, and a high resistive nonmetallic-type state by applying bias voltage (about 0.4 V). Reverse switching occurs by applying a voltage of opposite polarity (about 0.4 V). The reason may be the alteration of stoichiometry in the PC core due to the displacement of V ions to interlayer under a high electric field. The observed resistive switching characterizes VSe2 as a potential material, e.g., for non-volatile resistive RAM, neuromorphic engineering, and other nanoelectronic applications. Per contra, VS2 attracts attention as a rare layered van der Waals compound with magnetic transition.

Revealing the mechanism of the electron-transfer induced and enhanced intrinsic auxeticity in 2D penta-materials

The intrinsic auxeticity of materials has long been attributed to their unique geometric configurations. Triggering and enhancing auxeticity presents significant challenges, as many nanomaterials display subtle auxetic effects with a negative Poisson's ratio (NPR) typically above -0.4. This paper introduces three materials with identical symmetry—two-dimensional pentagonal structures Penta-B2×2Y2 (i.e., Penta-B2C4, Penta-B2N4, and JP-B2C2N2)—to investigate a novel mechanism influencing material auxeticity: electron transfer. Specifically, variations in electron transfer cause Penta-B2N4 and JP-B2C2N2 to show axial auxetic effects, whereas Penta-B2C4 demonstrates opposite behavior. The axial NPR of Penta-B2N4 is ∼ -0.05, while for JP-B2C2N2, it reaches ∼-0.46, significantly surpassing that of typical intrinsic auxetic materials. This represents an increase of approximately 920 % compared to Penta-B2N4. Additionally, JP-B2C2N2 features semi-metallic properties, where the conduction band minimum (CBM) and the valence band maximum (VBM) are tangent to the Fermi level. Consequently, minor alterations in external conditions can induce a transition between semiconductor and metallic states in JP-B2C2N2. Thus, the 2D material JP-B2C2N2 emerges as a promising candidate for nanoelectronic and electromechanical applications. Furthermore, this study also enhances the academic understanding of auxetic properties in nanomaterials by linking their mechanical and electronic characteristics and laying a theoretical foundation for further experimental exploration of auxeticity.

Structural, optical and electrical conduction characteristics of PMMA/PVAc/TBAI blended polymers

This study aims to create tetra-n-butylammonium iodide (TBAI) doped poly(methyl methacrylate) (PMMA)/polyvinyl acetate (PVAc) blended polymers for utilize in a diversity of optoelectronic applications. By the casting technique, the films of (PMMA/PVAc/x wt % TBAI) were formed. The structure and morphology characteristics of the blended materials were studied using X-ray diffraction and scanning electron microscopy techniques. The optical transmittance declined to a minimum value when the blend was loaded with 38 wt % TBAI. The blend containing 38 % TBAI exhibits the highest reflectance values in the visible range. The lowest direct optical bandgap energies (4.20 eV) and indirect optical bandgap energies (3.71 eV, 3.13 eV) were achieved when TBAI reached 38 wt%. The addition of TBAI leads to an enhancement of the refractive index values of PMMA/PVAc in the visible spectrum. The effect of TBAI doping amount on the optical dielectric constant, energy loss functions, optical conductivity, nonlinear optical parameters and emitted color of the host blend was explored. The maximum values of the optical dielectric constant and energy loss functions were achieved after the TBAI level reached 38 wt%. The three non-linear optical (NLO) parameters for PMMA/PVAc blended polymers were enhanced as the amount of TBAI increased. An increase in voltage (V) or temperature results in a significant increase in electric current (I). Raising the amount of TBAI doping also caused the electric current to rise irregularly, with the exception of the blend with x = 11 %, where it fell. The samples exhibited the non-ohmic characteristics of the current-voltage (I–V) properties. The conduction mechanism of all blended materials was studied in detail. Finally, the outcomes supported the optical and electric properties studies, which suggested that a range of nanoelectronics applications could make use of the PMMA/PVAc/x weight percent TBAI blended polymers.

Unlocking guanine’s potential: Unveiling electronic transitions and nanoelectronic applications through electric field modulation

Guanines, key players in DNA and RNA, exist as dynamic keto and enol forms, influencing reactivity and potential applications. This study explores the impact of external electric fields on these forms using computational methods in gas and solvent (water) phases. Analyzing the energy gap, dipole moment, enthalpy, and Gibbs free energy revealed distinct responses. The keto form showed a significant decrease in the energy gap in the presence of an electric field, particularly in water, indicating enhanced reactivity. Conversely, the enol form exhibited a stabilizing effect with increasing electric field strength. Thermodynamic properties highlighted solvent-dependent interactions and electric field-induced changes in electron density distribution. The study further investigated guanine’s potential for nanoelectronics by calculating I-V curves, revealing promising characteristics, especially for the keto form in the aqueous phase. Additionally, the analysis of solvation and cohesive energies provided insights into solute–solvent interactions and intrinsic molecular stability. Overall, this research contributes to understanding how guanine responds to electric fields, paving the way for novel guanine-based materials with potential applications in nanoelectronics.

Epitaxial Growth of Monolayer SnP3 with High Mobility and Chiral Boundary Junctions.

Two-dimensional materials with layered structures, appropriate band gaps, and high carrier mobility have attracted tremendous interest for their potential applications. Here we report the growth of monolayer SnP3 on Au(111) surfaces by molecular beam epitaxy. The kinetic processes for the growth and the crystalline properties are studied by scanning tunneling microscopy. The weak interaction between SnP3 and its Au(111) substrate is signified by the random crystal orientation distributions of SnP3 nanosheets. The electronic structures exhibit a band gap of ∼0.25 eV and high charge carrier mobility comparable to that of black phosphorus engineered by compressive strain. Additionally, domain boundary junctions with opposite chirality are observed, resulting from the strained film in the epitaxial growth process. Our work provides a method to fabricate high-quality monolayer SnP3 and suggests that the monolayer SnP3 is a promising candidate for applications in nanoelectronics and optoelectronics.

Photochromic Carbon Nanomaterials: An Emerging Class of Light-Driven Hybrid Functional Materials.

Photochromic molecules have remarkable potential in memory and optical devices, as well as in driving and manipulating molecular motors or actuators and many other systems using light. When photochromic molecules are introduced into carbon nanomaterials (CNMs), the resulting hybrids provide unique advantages and create new functions that can be employed in specific applications and devices. This review highlights the recent developments in diverse photochromic CNMs. Photochromic molecules and CNMs are also introduced. The fundamentals of different photochromic CNMs are discussed, including design principles and the types of interactions between CNMs and photochromic molecules via covalent interactions and non-covalent bonding such as π-π stacking, amphiphilic, electrostatic, and hydrogen bonding. Then the properties of photochromic CNMs, e.g., in photopatterning, fluorescence modulation, actuation, and photoinduced surface-relief gratings, and their applications in energy storage (solar thermal fuels, photothermal batteries, and supercapacitors), nanoelectronics (transistors, molecular junctions, photo-switchable conductance, and photoinduced electron transfer), sensors, and bioimaging are highlighted. Finally, an outlook on the challenges and opportunities in the future of photochromic CNMs is presented. This review discusses a vibrant interdisciplinary research field and is expected to stimulate further developments in nanoscience, advanced nanotechnology, intelligently responsive materials, and devices.