Application Of Voltage Pulses Research Articles

Investigation of the Versatile Utilization of Three-Dimensional Vertical Resistive Random-Access Memory in Neuromorphic Computing.

The continuous advancement of computing technologies such as the Internet of Things and artificial intelligence emphasizes the need for innovative approaches to data processing. Faced with limitations in processing speed due to the exponentially increasing volume of data, conventional von-Neumann computing systems are transforming into a new paradigm called neuromorphic computing, inspired by the efficiency of the human brain. We fabricate three-dimensional vertical resistive random-access memory (VRRAM), which is highly suited for neuromorphic computing, and demonstrate its value as an artificial synapse. Beyond simulating simple synaptic functionalities such as spike-rate-dependent plasticity, spike-timing-dependent plasticity, and paired-pulse facilitation, we propose specific applications and experimentally implement them. In pattern recognition simulations based on the weight update characteristics of the fabricated VRRAM, the accuracy achieved in pattern recognition using appropriate pulse schemes reaches 90.4%. Additionally, we demonstrate adaptive learning behavior on the device by mimicking Pavlov's dog experiment with combinations of applied voltage pulses. Finally, we employ suitable write/erase pulse trains to implement binary representations for decimal numbers ranging from 0 to 15, thereby illustrating the significant potential of local devices for edge computing applications.

An efficient device model for ferroelectric thin-film transistors

Ferroelectric thin-film transistors (Fe-TFTs) have promising potential for flexible electronics, memory, and neuromorphic computing applications. Here, we report on a physics-based efficient device model for Fe-TFTs that effectively describes memory switching and device I–V characteristics. This model combines a stochastic multi-domain description of FE switching dynamics with a virtual source treatment of TFT device characteristics. It demonstrates that the memory window of Fe-TFTs depends on the amplitude and duration of the applied voltage pulses, thus suggesting quantitative means of programming and control. Additionally, we introduce a machine-learning-enabled method to automatically generate optimal voltage pulses for accurately programming multiple intermediate FE states, which is crucial for multi-bit memory and neuromorphic computing applications. To showcase the model’s applications, we simulate a 4×4 crossbar array circuit based on Fe-TFTs, highlighting its utility in performing multiply-accumulate computing operations. This small array can achieve a high speed of ∼1.28 tera operations per second (OPS) and a power efficiency of ∼0.43 W/PetaOPS. The model developed here is valuable for exploring the capabilities of Fe-TFTs in future flexible memory and computing technologies.

A Flexible Electrochromic Device for All-Season Thermal Regulation on Curved Transparent Building Envelopes.

As one of the least energy-efficient components in buildings, transparent building envelopes are responsible for approximately 60% of the total energy losses. Although controlling solar transmittance through electrochromic modulation is an effective method for temperature management in these structures, a dynamic control strategy for solar light on curved transparent building envelopes is still lacking. In this study, we introduce a dual-mode flexible electrochromic device based on reversible silver deposition for curved transparent building envelopes. The device operates by reversibly depositing and dissolving silver on a flexible polyethylene terephthalate-indium tin oxide (PET-ITO) substrate, controlled through the application and removal of pulsed voltage. This mechanism enables rapid switching between radiative cooling and solar heating modes, leading to modulation of solar reflectance from 89.1% to 15.7% and solar transmittance from 0.02% to 72.9%. Under approximately 700 W/m2 of solar irradiance, the device achieves an average temperature reduction of 1.6 °C (with a maximum reduction of 4.3 °C) compared to ambient temperature in radiative cooling mode. In solar heating mode, the device achieves an average temperature increase of 17.1 °C (with a maximum increment of 23.7 °C) compared to ambient temperature. Simulation results show that the dual-mode flexible electrochromic device could offer all-season thermal regulation for curved transparent building envelopes and achieve a maximum of over 50% annual HVAC energy savings.

Multi-factor coupling analysis of electric field distribution in electrochemical machining with electrolyte suction tool

Electrochemical machining (ECM) technology holds significant potential for applications in high accuracy engineering and manufacturing. To confine the electrolyte region during ECM and mitigate the effects of reaction products and heat generation, an electrolyte suction tool has been proposed. However, the complex electric field distribution on the anode surface during the application of pulse voltage, limits the further utilization of ECM with suction tool. A multi-physics simulation model is established to calculate the region of electrolyte confinement by the suction tool, current density distribution within the electrolyte region, and material removal. The model considers the combined effects of polarization and double layer, and all key parameters are calibrated through classical electrochemical testing experiments rather than fitted based on the predicted results. This study elucidates the transient response of current density on the anode surface during the application of pulse voltage. The simulation accuracy is validated by comparing experimental and simulated current waveforms, as well as material removal profiles under different pulse parameters and electrode shapes. This research is of great significance for improving surface precision and controllability of complex structures in ECM with suction tool, promoting its further application in the field of precision machining.

Structuring of the Surface of Thin Carbon Films During Activation by Microsecond Current Pulses

The influence of current activation by electric pulse breakdown on changes in surface morphology and emission characteristics of a field emission cathode made on the basis of carbon films obtained by deposition in a microwave gas discharge plasma was studied. Current activation of these films was carried out by applying voltage pulses of microsecond duration until an electrical breakdown occurred. It is shown that during activation, the morphology of the film surface in the breakdown region changes with the formation of a micro-sized emitting structure, which significantly improves the field emission characteristics of cathodes based on carbon films.

Synthesis and Polymorph Manipulation of FeSe2 Monolayers.

Polymorph engineering involves the manipulation of material properties through controlled structural modification and is a candidate technique for creating unique two-dimensional transition metal dichalcogenide (TMDC) nanodevices. Despite its promise, polymorph engineering of magnetic TMDC monolayers has not yet been demonstrated. Here we grow FeSe2 monolayers via molecular beam epitaxy and find that they have great promise for magnetic polymorph engineering. Using scanning tunneling microscopy (STM) and spectroscopy (STS), we find that FeSe2 monolayers predominantly display a 1T' structural polymorph at 5 K. Application of voltage pulses from an STM tip causes a local, reversible transition from the 1T' phase to the 1T phase. Density functional theory calculations suggest that this single-layer structural phase transition is accompanied by a magnetic transition from an antiferromagnetic to a ferromagnetic configuration. These results open new possibilities for creating functional magnetic devices with TMDC monolayers via polymorph engineering.

Electric Field Generated at the Millisecond Pulse-Polarized Interface Facilitates the Electrolytic Conversion of SO2 into H2S.

Interfacial electric field holds significant importance in determining both the polar molecular configuration and surface coverage during electrocatalysis. This study introduces a methodology leveraging the varying electric dipole moment of SO2 under distinct interfacial electric field strengths to enhance the selectivity of the SO2 electroreduction process. This approach presented the first attempt to utilize pulsed voltage application to the Au/PTFE membrane electrode for the control of the molecular configuration and coverage of SO2 on the electrode surface. Remarkably, the modulation of pulse duration resulted in a substantial inhibition of the hydrogen evolution reaction (HER) (FEH2 < 3%) under millisecond pulse conditions (ta = 10 ms, tc = 300 ms, Ea = -0.8 V (vs Hg/Hg2SO4), Ec = -1.8 V (vs Hg/Hg2SO4)), concomitant with a noteworthy enhancement in H2S selectivity (FEH2S > 97%). A comprehensive analysis, incorporating in situ Raman spectroscopy, electrochemical quartz crystal microbalance, COMSOL simulations, and DFT calculations, corroborated the increased selectivity of H2S products was primarily associated with the inherently large dipole moment of the SO2 molecule. The enhancement of the interfacial electric field induced by millisecond pulses was instrumental in amplifying SO2 coverage, activating SO2, facilitating the formation of the pivotal intermediate product *SOH, and effectively reducing the reaction energy barrier in the SO2 reduction process. These findings provide novel insights into the influences of ion and molecular transport dynamics, as well as the temporal intricacies of competitive pathways during the SO2 electroreduction process. Moreover, it underscores the intrinsic correlation between the electric dipole moment and surface-molecule interaction of the catalyst.

Charge transport dynamics and emission response in quantum-dot light-emitting diodes for next-generation high-speed displays

Inorganic quantum-dot light-emitting diodes (QD-LEDs) have gained significant attention as optoelectronic devices for next-generation display systems due to their superior colour properties. A comprehensive understanding of the charge transport dynamics and transient emission responses of the QD-LED is crucial to achieving high motion picture quality next-generation QD-LED display systems. In this study, we investigated the transient emission response of QD-LED devices through an advanced charge transport simulation model tailored to the quantum-dots (QDs). The dynamic response of the QD-LED devices is evaluated using the time-resolved electroluminescence measurement method for both cadmium-based and cadmium-free red, green, and blue QD-LEDs. The QD-LED devices exhibit notable emission drops during pulse voltage application. The charge transport simulation quantitatively reveals that the on and off switching speeds and the emission drops are intricately influenced by the electron and hole injection balance and a combination of carrier recombination factors within the QD layer. The charge transport simulation also shows that space-charge accumulation, due to the combined effects of charge imbalance and Auger recombination, quantitatively explains a potential device degradation mechanism. Therefore, the QD-specified charge transport model provides a crucial approach in designing and optimizing QD-LED devices for next-generation high-speed QD-LED displays with ultimate colour quality and long lifetimes.

Fabrication of plasmonic probes for reproducible nanospectroscopic investigation of lipid monolayers – The electrochemical etching with DC-pulsed voltage

Tip-enhanced Raman spectroscopy (TERS) is a label-free analytical technique that characterizes molecular systems, potentially even with a nanometric resolution. In principle, the metallic plasmonic probe is illuminated with a laser beam generating the localized surface plasmons, which induce a strong local electric field enhancement in close proximity to the probe. Such field enhancement improves the Raman scattering cross-section from the sample volume localized near the probe apex. TERS provides a high spatial resolution and a great sensitivity, however, it is rather rarely used due to technical limitations causing unstable enhancement and the relative lack of data reproducibility. Despite many scientific efforts for the fabrication of effective TER probes providing robust TER enhancement still requires further investigations. In this work, we explore new possibilities based on preparation of scanning tunnelling microscopy (STM) plasmonic probes, since by nature of the tunnelling effect, they potentially could offer a very high spatial resolution in STM guided TERS experiments. Here we compare two methods of STM-TERS probe preparation for effective spectra acquisition. Our results strongly indicate that an application of square pulse voltage upon the etching procedure significantly improves the quality of the TER data over those obtained with a constant voltage one. To demonstrate the efficiency of our probes we present the results of hyperspectral TER mapping of the 1,2-dipalmitoyl-sn-glycero-3-phosphoethanolamine (DPPE) monolayer deposited on an ultra-pure and atomically flat gold substrate.

High-Performance Memristive Synapse Composed of Ferroelectric ZnVO-Based Schottky Junction.

In pursuit of realizing neuromorphic computing devices, we demonstrated the high-performance synaptic functions on the top-to-bottom Au/ZnVO/Pt two-terminal ferroelectric Schottky junction (FSJ) device architecture. The active layer of ZnVO exhibited the ferroelectric characteristics because of the broken lattice-translational symmetry, arising from the incorporation of smaller V5+ ions into smaller Zn2+ host lattice sites. The fabricated FSJ devices displayed an asymmetric hysteresis behavior attributed to the ferroelectric polarization-dependent Schottky field-emission rate difference in between positive and negative bias voltage regions. Additionally, it was observed that the magnitude of the on-state current could be systematically controlled by changing either the amplitude or the width of the applied voltage pulses. Owing to these voltage pulse-tunable multi-state memory characteristics, the device revealed diverse synaptic functions such as short-term memory, dynamic range-tunable long-term memory, and versatile rules in spike time-dependent synaptic plasticity. For the pattern-recognition simulation, furthermore, more than 95% accuracy was recorded when using the optimized experimental device parameters. These findings suggest the ZnVO-based FSJ device holds significant promise for application in next-generation brain-inspired neuromorphic computing systems.

Deicing and status characteristics of dual-side pulsed surface dielectric barrier discharge

The deicing process and its status characteristics of dual-side pulsed surface dielectric barrier discharge (SDBD) are studied via electro-optical diagnostics, thermal properties, and numerical simulation. Experimental results show that the dual-side pulsed SDBD can remove the glaze ice compared to the traditional pulsed SDBD under the applied pulse voltage of 8 kV and a pulse frequency of 1 kHz. The maximal temperature of dual-side pulsed SDBD reaches 39.5 °C under the discharge time of 800 s, while the maximal temperature of traditional pulsed SDBD is still below ice point about −7.8 °C. Surface temperatures of dual-side pulsed SDBD demonstrate that the SDBD with a gap of 1 mm possesses prospects in deicing. The maximal surface temperature reaches 37.1 °C under the pulse of 8 kV after the discharge time of 90 s. Focusing on the thermal effect, a two-dimensional plasma fluid model is implemented, and the results also indicate that the dual-side pulsed SDBD with a gap of 1 mm produces a highest heat density among the three different configurations. Comparing the spatial-temporal evolutions of plasma on both dielectric sides, primary positive streamer has a longer propagation length of 8.6 mm than the secondary negative streamer, the primary negative streamer, and the secondary positive streamer, which induces a long heat covered area. Four stages of deicing process are analyzed through a series of electrical parameters under different covered ice conditions.

Development of nanosecond spike pulse power supply for electrochemical micromachining

The use of pulse voltage can greatly improve the precision of electrochemical microfabrication, and the narrower the pulse width of the applied pulse voltage signal, the higher the machining precision. However, the commonly used chopper circuit topology of pulse power supplies is limited by the maximum switching frequency of the field-effect transistor. To address this problem, this paper proposes a nanosecond pulse electrochemical micromachining power supply based on a differential circuit. The power supply uses the STM32F103C8T6 microcontroller as the control core to output high-performance rectangular waves through a DDS device. After differential, rectification, filtering, and power amplification processing, stable, frequency, amplitude, and pulse width adjustable spike pulse voltage signals are obtained. By establishing a system mathematical model and optimizing the time constant of the differential circuit, theoretically, the sub-nanosecond pulse width can be obtained. Prototype performance tests show that the power supply has a maximum frequency of 20 MHz, a minimum pulse width of 1.8 ns, and a maximum peak voltage of 10 V. By using this power supply for microhole electrochemical machining experiments, nanometer-level machining precision has been achieved.

Artificial synapses based on 2D-layered palladium diselenide heterostructure dynamic memristor for neuromorphic applications

The transformation of partially amorphous two-dimensional (2D) material layers represents a promising avenue for enhancing the reliability of heterostructure memristor devices and achieving high-density memory with synaptic characteristics. In this study, we investigate the advantages of aluminum oxide-based redox reactive layers integrated with 2D pentagonal palladium diselenide (PdSe2) layers, resulting in the realization of a reliable multilevel conductance memory controlled by DC and pulse voltages. Through careful analysis, we observed that the formation and rupture of conductive filaments related to oxygen vacancies were significantly controlled at the Al2O3/PdSe2 interface, where a mixed oxide of Al-PdSeOx was formed. This exciting phenomenon was further corroborated by comprehensive chemical analysis of the synapse structure as well as various synaptic behaviors, predominantly modulated by the facile movement of oxygen ions under the influence of external electric fields. Remarkably, our experimental results demonstrated improved endurance with multiple memory states achieved by judiciously altering the RESET voltage and SET current compliance, yielding an impressive memory window exceeding 10. Moreover, we successfully achieve a controlled transition from short-term to long-term memory through the application of identical and nonidentical consecutive pulse voltages. Inspired by biological synapses, our PdSe2-based artificial synapse exhibits biocompatible short-term plasticity, such as spike rate-dependent plasticity, paired-pulse facilitation, and experience-dependent plasticity, effectively mimicking the functionality of its biological counterparts. Notably, this biocompatible synapse also demonstrates great potential for visual memory processing, and multilevel 4-bit reservoir computing by demonstrating 5 × 4 digit image recognition thereby offering a distinct advantage for artificial neuromorphic applications.

Analog Memory and Synaptic Plasticity in an InGaZnO-Based Memristor by Modifying Intrinsic Oxygen Vacancies.

This study focuses on InGaZnO-based synaptic devices fabricated using reactive radiofrequency sputtering deposition with highly uniform and reliable multilevel memory states. Electron trapping and trap generation behaviors were examined based on current compliance adjustments and constant voltage stressing on the ITO/InGaZnO/ITO memristor. Using O2 + N2 plasma treatment resulted in stable and consistent cycle-to-cycle memory switching with an average memory window of ~95.3. Multilevel resistance states ranging from 0.68 to 140.7 kΩ were achieved by controlling the VRESET within the range of -1.4 to -1.8 V. The modulation of synaptic weight for short-term plasticity was simulated by applying voltage pulses with increasing amplitudes after the formation of a weak conductive filament. To emulate several synaptic behaviors in InGaZnO-based memristors, variations in the pulse interval were used for paired-pulse facilitation and pulse frequency-dependent spike rate-dependent plasticity. Long-term potentiation and depression are also observed after strong conductive filaments form at higher current compliance in the switching layer. Hence, the ITO/InGaZnO/ITO memristor holds promise for high-performance synaptic device applications.

Heat flux from the surface in the process of the rupture of a thin liquid film by an electric field

In this article, the cooling of a solid surface by an evaporating film of a dielectric liquid and the influence of an electric field on this process are studied. The mesoscopic lattice Boltzmann method is applied to simulate the fluid flow with phase transitions and the heat transfer. The cases without electric field, with initially uniform electric displacement field, and with non-uniform electric field are considered. A uniform field enhances the cooling slightly. Non-uniform field leads to the rupture of the film. In this case, the local heat flux in local regions increases significantly when the film becomes thin and effectively evaporates. After the rupture of the film, the heat flux from a dry spot decreases abruptly. The formation of a dry spot can be prevented by switching off the electric field before the film rupture. Thus, we demonstrate the possibility of enhanced cooling of local regions at a surface using pulses of non-uniform electric field acting on a thin film of dielectric liquid placed at the surface. If the inflow of liquid to the film could be provided, it is in principle possible to realize a periodic process of application of voltage pulses to electrodes and to enhance the cooling of surface by the evaporation of a film of dielectric liquid.

The effects of catalyst conductivity and loading of dielectric surface structures on plasma dynamics in patterned dielectric barrier discharges

Dielectric barrier discharges (DBDs) are promising tools for air pollution removal and gas conversion based on excess renewable energy. Catalyst loading of dielectric pellets placed inside the plasma can improve such processes. The effects of such metallic and dielectric catalyst loading on the discharge are investigated experimentally. A patterned DBD is operated in different He/O2 mixtures and driven by a pulsed rectangular voltage waveform. Hemispherical dielectric pellets coated by different catalyst materials at different positions on their surface are embedded into the bottom grounded electrode. Based on phase resolved optical emission spectroscopy the effects of different catalyst materials and locations on the streamer dynamics are investigated. The propagation of cathode directed positive volume streamers towards the apex of the hemispheres followed by surface streamers, that move across the structured dielectric, is observed for positive applied voltage pulses. Coating the apex with a conducting catalyst results in attraction of such streamers towards the apex due to charging of this surface, while they avoid the apex in the presence of a dielectric catalyst. Surface streamers, that propagate across the hemispheres, are stalled by conducting catalysts placed on the embedded pellets as rings of different diameters, but propagate more easily across dielectric coatings due to the presence of tangential electric fields. Reversing the polarity of the driving voltage results in the propagation of negative streamers across the patterned dielectric and attenuated effects of catalytic coatings on the streamer dynamics.

Trainable Bilingual Synaptic Functions in Bio-enabled Synaptic Transistors.

The signal transmission of the nervous system is regulated by neurotransmitters. Depending on the type of neurotransmitter released by presynaptic neurons, neuron cells can either be excited or inhibited. Maintaining a balance between excitatory and inhibitory synaptic responses is crucial for the nervous system's versatility, elasticity, and ability to perform parallel computing. On the way to mimic the brain's versatility and plasticity traits, creating a preprogrammed balance between excitatory and inhibitory responses is required. Despite substantial efforts to investigate the balancing of the nervous system, a complex circuit configuration has been suggested to simulate the interaction between excitatory and inhibitory synapses. As a meaningful approach, an optoelectronic synapse for balancing the excitatory and inhibitory responses assisted by light mediation is proposed here by deploying humidity-sensitive chiral nematic phases of known polysaccharide cellulose nanocrystals. The environment-induced pitch tuning changes the polarization of the helicoidal organization, affording different hysteresis effects with the subsequent excitatory and inhibitory nonvolatile behavior in the bio-electrolyte-gated transistors. By applying voltage pulses combined with stimulation of chiral light, the artificial optoelectronic synapse tunes not only synaptic functions but also learning pathways and color recognition. These multifunctional bio-based synaptic field-effect transistors exhibit potential for enhanced parallel neuromorphic computing and robot vision technology.

Evidence of Transport Degradation in 22 nm FD-SOI Charge Trapping Transistors for Neural Network Applications

This article reports on the characterization and analysis of 22 nm FD-SOI CMOS technology-based charge trap transistors (CTT) and their application in neural networks. The working principle of CTT as non-volatile memory depends on trapping and de-trapping of charge in the high-k gate dielectric with the application of voltage pulses on the drain and gate terminals. This programming condition leads to the generation of interfacial traps that can drastically impact device performance. We report degradation in CTT through extractions of subthreshold swing, ON-state current, and mobility. We elucidate transport degradation by correlating effective mobility to interface trap density using a quasi-ballistic transport theory essential for the nanoscale devices under test in this work. Importantly, the trap-induced degradation in CTT transport is not recovered with voltage pulsing at room temperature as our experiments show. We demonstrate the implications of these findings based on analog computation of dot products, an operation of utmost importance to the implementation of artificial neural networks.

Electrochemical Characterization and Micromachining of Nitinol SMA by WECM Using Citric Acid Mixed H2SO4 Electrolyte

Nitinol shape memory alloy (SMA) is a tough material to machine because it is difficult to cut. The results of the current research work demonstrate how two different electrolytes affect the electrochemical behavior in relation to electrochemical machining performance of nitinol. Potentiodynamic polarisation (PDP) and electrochemical impedance spectroscopy (EIS) tests have been conducted using 0.1 M H2SO4 and mixed 0.1 M H2SO4 + 0.1 M citric acid electrolyte. Further, the experimental investigation on the machining characteristics of nitinol during wire electrochemical machining (WECM) has been conducted. It is revealed that the grooves width and depth increase with increase in applied pulse voltage and surface roughness increase with increase in groove depth. The minimum width overcut of machined groove was 18.10 μm in 0.1 M H2SO4 + 0.1 M citric acid at 5 V pulse voltage which is less compared to width overcut of 24.85 μm produced in 0.1 M H2SO4 electrolyte for same parametric machining condition. This specific mixed electrolyte produced average surface roughness (Ra) of 0.0631 μm at 5 V which is lower compared to 0.09055 μm produced using 0.1 M H2SO4 electrolyte. The fabrication of homogeneous average slit width of 92.234 μm using citric acid mixed H2SO4 electrolyte with minimum average surface roughness (Ra) of 0.0691 μm shows the capability of WECM.

Ultrafast-programmable two-dimensional homojunctions based on van der Waals heterostructures on a silicon substrate.

The development of electrically ultrafast-programmable semiconductor homojunctions can lead to transformative multifunctional electronic devices. However, silicon-based homojunctions are not programmable so that alternative materials need to be explored. Here wedemonstrate two-dimensional (2D), multi-functional, lateral homojunctions made of van der Waals heterostructures with a semi-floating-gate configuration on a p++ Si substrate feature atomically sharp interfaces and can be electrostatically programmed in nanoseconds, more than seven orders of magnitude faster than other 2D-based homojunctions. By applying voltage pulses with different polarities, lateral p-n, n+ -n and other types of homojunctions can be formed, varied, and reversed. The p-n homojunctions possess a high rectification ratio up to ∼105 and can be dynamically switched between four distinct conduction states with the current spanning over nine orders of magnitude, enabling them to function as logic rectifiers, memories and multi-valued logic inverters. Built on a p++ Si substrate, which acts as the control gate, the devices are compatible with Si technology. This article is protected by copyright. All rights reserved.