Application Of Ferroelectric Films Research Articles

Preventing Color Fading in Artist’s Oil Paintings Based on Nano-PZT Ferroelectric Thin Film

Due to the excellent electrical properties, stable temperature characteristics, and abundant material systems of ferroelectric thin film materials, in recent years, ferroelectric devices based on silicon technology have been used in microelectronic mechanical systems, new energy photovoltaics, especially nonvolatile memory and other fields. During the preservation of the artist’s oil painting works, the temperature change will directly cause the physical effects of thermal expansion and contraction of the oil painting and the chemical reaction speed of the material in nature. Therefore, it is of great significance to introduce the technology of nano-PZT ferroelectric thin film into oil paintings to prevent fading. This article aims to study the research on preventing fading of the artist’s oil paintings based on nano-PZT ferroelectric thin films and analyze the characteristics of ferroelectric materials, the application of ferroelectric films, the preparation methods of ferroelectric films, and the basis of the main environmental factors that affect the fading of oil paintings. In the above, we studied the fading process of different concentrations of oil paints under simulated sunlight aging and the effect of different concentrations and thicknesses of PZT ferroelectric thin films coated with nano-TiO2 coatings on the color stability of oil paints. The experimental results show that after five times of simulated solar aging for the four concentrations, the total color difference △E: 0.05% group is the largest, 0.4% group is the smallest, the higher the oil paint concentration, the smaller the color difference, the better the color stability, and the antisimulation of sunlight fading.

Intrinsic hysteresis loops in ferroelectric film systems

With the increasing emphasis on the applications of ferroelectric films in memory devices, it is relevant to calculate hysteresis loops for film systems. Here we present two calculations based on the Landau Devonshire free energy. First we deal with a ferroelectric bilayer with an assumed antiferroelectric coupling across the interface. The calculations apply equally to a superlattice with this coupling. We show that by variation of the ratio L 1/L 2 of the film thicknesses it is possible to engineer the hysteresis loop between a form similar to that of a bulk antiferroelectric for L 1/L 2 ≈ 1 and a ferroelectric form for L 1/L 2 ≫ 1. The bilayer model includes the simplifying assumption that the polarization is constant in each film. We go on to discuss inclusion in the hysteresis calculations of polarization variation P(z) within a film; for simplicity we deal with a single film. We show that the numerical scheme used for first-order films (Ong et al., these Proceedings) can be extended to include an applied field so that hysteresis loops can be calculated; some examples are given.

Integrated ferroelectrics: Some results and considerations

Some microelectronic applications of ferroelectric films, such as MISFET, CCD, memory, and solid state image sensor are discussed.

Microelectronic applications of ferroelectric films

The promising application of ferroelectric films as a gate dielectric in some microelectronic devices has been assessed. It is shown that the high dielectric constant of ferroelectrics allows improvement of device performance (amplification and power characteristics of MIS transistors and information amount transferred through the register of CCD). The requirements towards ferroelectric material and ferroelectric-semiconductor interface performance in ferroelectric non-volatile memories have been discussed. On the base of fluctuation theory of surface states it is supposed that the spontaneous polarization may induce additional traps on the ferroelectric-semiconductor interface.

TdP213. Ferroelectric thin films for microelectronic applications

Abstract Some microelectronic applications of ferroelectric films, such as MISFET, CCD, memory, and solid state image sensor are discussed. Certain results on preparation of thin films by sol-gel method are given as well.

Fabrication and applications of piezo-and ferroelectric films

Abstract Different thin film fabrication techniques of ferro- and piezoelectric materials is described with special emphasis on rf sputtering. The relative advantages and disadvantages of oxide and metallic targets, and the control of stoichiometry by adjusting the target substrate distance and composition of target is described. The possible applications of ferroelectric films in non-volative memories, pyroelectric detectors, electro- and acousto-optic devices is briefly presented. The applications of these films in the fabrication of integrated Surface Acoustic Wave (SAW) devices on Silicon is discussed in some detail. Theoretical calculations of SAW transduction in layered media is used to compare selected ferroelectric (PZT, PbTiO3. LiNbO3 and BaTiO3) and piezoelectric (ZnO, AIN and CdS) films on silicon for their use in SAW devices.