Abstract
The promising application of ferroelectric films as a gate dielectric in some microelectronic devices has been assessed. It is shown that the high dielectric constant of ferroelectrics allows improvement of device performance (amplification and power characteristics of MIS transistors and information amount transferred through the register of CCD). The requirements towards ferroelectric material and ferroelectric-semiconductor interface performance in ferroelectric non-volatile memories have been discussed. On the base of fluctuation theory of surface states it is supposed that the spontaneous polarization may induce additional traps on the ferroelectric-semiconductor interface.
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