Applications In Electronic Devices Research Articles

Defect structure-electronic property correlations in transition metal dichalcogenide grain boundaries.

Grain boundaries (Gb) in transition metal dichalcogenides are a rich source of interesting physics as well as a cause of concern because of its impact on electron transport across them in large area electronic device applications. Here, using first principles calculations, we show that beyond the conventional definition of grain boundaries based on misorientation, the defect structure present at the grain boundaries plays a significant role in defining the local electronic properties. We observed that even the standard 5-7 defect ring has differing electronic characteristics depending on its internal configuration. While the 5-7 ring presents shallow defect states, and induce long range strain fields with the local bandgap increasing up to 32.7%, the other commonly observed 4-8 defect rings introduce only mid-gap states, induce smaller strain fields with no observable bandgap change. The results show the seminal character of the individual defect structures at grain boundaries, and that their relative density can be used to determine the overall physico-chemical properties of the grain boundary.

Raman spectrum and phonon thermal transport in van der Waals semiconductor GaPS4

The emergent van der Waals semiconductor GaPS4 is heralding frontiers for gallium-based semiconductors. Despite its potential, the intricacies of its Raman spectrum and phonon heat transport remain elusive. In this research, experimental and theoretical methods are employed to give a comprehensive portrayal. The Raman spectra and phonon calculations obtained were cross-validated, affirming the study's credibility. A total of 28 Raman peaks were identified, with all phonon irreducible representations delineated. Advanced calculations unveiled notable shifts in the transition of GaPS4 from bulk to monolayer. During this process, phonons undergo a red shift, and the vibration contributions of different atoms change. The lifetime and group velocity of low wavenumber phonons are markedly reduced, suppressing the thermal conductivity in the monolayer. The thermal conductivity of GaPS4 bulk at 300 K is 0.5 W/m K, and 0.13 W/m K for monolayer, while the thermal conductivity in the cleavage direction is lower. These findings offer a detailed account of the complex Raman spectra and phonon thermal transport properties of GaPS4, setting the stage for its subsequent exploration and prospective applications in electronic and thermal devices, and contributing to enriching condensed matter theory of phonon thermal transport in van der Waals materials.

High-Performance Tin Oxide Thin-Film Transistors Realized by Codoping and Their Application in Logic Circuits.

Tin oxide is a promising channel material, offering the advantages of being low-cost and environmentally friendly and having a wide band gap. However, despite the high electron mobility of SnO2 in bulk, the corresponding thin-film transistors (TFTs) generally exhibit moderate performance, hindering their widespread application. Herein, we proposed a codoping strategy to improve both the electrical property and the stability of SnO2 TFTs. A comparative analysis between doped and undoped SnO2 was conducted. It is observed that taking advantage of the difference in ionic radii between two dopants (indium and gallium) and the tin ions in the host lattice can effectively reduce impurity-induced strain. Additionally, we investigated the effect of codoping content on SnO2 TFTs. The optimal codoped SnO2 (TIGO) TFTs demonstrate high performance, featuring a field-effect mobility of 15.9 cm2/V·s, a threshold voltage of 0.2 V, a subthreshold swing of 0.5 V/decade, and an on-to-off current ratio of 2.2 × 107. Furthermore, the devices show high stability under both positive and negative bias stress conditions with a small threshold voltage shift of 1.8 and -1.2 V, respectively. Utilizing the TIGO TFTs, we successfully constructed a resistor-loaded unipolar inverter with a high gain of 10.76. This study highlights the potential of codoped SnO2 TFTs for advanced applications in electronic devices.

A systematic first-principles investigation of the structural, electronic, mechanical, optical, and thermodynamic properties of Half-Heusler ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn) for spintronics and optoelectronics applications.

This paper is the first to look at the structural, electronic, mechanical, optical, and thermodynamic properties of the ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn) half-Heusler (HH) using DFT based first principles method. The lattice parameters that we have calculated are very similar to those obtained in prior investigations with theoretical and experimental data. The positive phonon dispersion curve confirm the dynamical stability of ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn). The electronic band structure and DOS confirmed that the studied materials ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn) are direct band gap semiconductors. The investigation also determined significant constants, including dielectric function, absorption, conductivity, reflectivity, refractive index, and loss function. These optical observations unveiled our compounds potential utilization in various electronic and optoelectronic device applications. The elastic constants were used to fulfill the Born criteria, confirming the mechanical stability and ductility of the solids ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn). The calculated elastic modulus revealed that our studied compounds are elastically anisotropic. Moreover, ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn) has a very low minimum thermal conductivity (Kmin), and a low Debye temperature (θD), which indicating their appropriateness for utilization in thermal barrier coating (TBC) applications. The Helmholtz free energy (F), internal energy (E), entropy (S), and specific heat capacity (Cv) are determined by calculations derived from the phonon density of states.

In Situ Growth of COF/PVA-Carrageenan Hydrogel Using the Impregnation Method for the Purpose of Highly Sensitive Ammonia Detection

Flexible ammonia (NH3) gas sensors have gained increasing attention for their potential in medical diagnostics and health monitoring, as they serve as a biomarker for kidney disease. Utilizing the pre-designable and porous properties of covalent organic frameworks (COFs) is an innovative way to address the demand for high-performance NH3 sensing. However, COF particles frequently encounter aggregation, low conductivity, and mechanical rigidity, reducing the effectiveness of portable NH3 detection. To overcome these challenges, we propose a practical approach using polyvinyl alcohol-carrageenan (κPVA) as a template for in the situ growth of two-dimensional COF film and particles to produce a flexible hydrogel gas sensor (COF/κPVA). The synergistic effect of COF and κPVA enhances the gas sensing, water retention, and mechanical properties. The COF/κPVA hydrogel shows a 54.4% response to 1 ppm NH3 with a root mean square error of less than 5% and full recovery compared to the low response and no recovery of bare κPVA. Owing to the dual effects of the COF film and the particles anchoring the water molecules, the COF/κPVA hydrogel remained stable after 70 h in atmospheric conditions, in contrast, the bare κPVA hydrogel was completely dehydrated. Our work might pave the way for highly sensitive hydrogel gas sensors, which have intriguing applications in flexible electronic devices for gas sensing.

Photo‐Directed Growth of Surface Micro‐Patterns on Photosensitive Semicrystalline Polymers

AbstractPatterning polymeric materials with controllable microstructures can meet diversified requirements and realize promising applications. Exploring micro‐/nano‐pattern methodology offers possibilities for future techniques, however, the self‐organized growth of polymeric materials has some limitations and the development of direct and noncontact patterning processes is still challenging. In this work, the study presents a facile strategy for endowing polymers with spatially regulated microstructures by direct photo‐printing, which incorporates both advantages of typical top‐down and bottom‐up approaches. By employing the photodimerization of anthracene‐containing semi‐crystallized polymers, the gradient crosslinking results in a mismatch of thermal expansion coefficients between the crosslinked surface and the uncrosslinked bottom layer. After heating treatment, constrained by the crosslinked surface, the uncrosslinked bottom polymer of the molten state in the exposed region tends to flow and migrate toward the unexposed region, similar to a volcanic eruption, which accurately determines the height and morphology of pattern. Besides, the well‐defined patterns can controllably grow upon thermal treatment due to phase transformation and migration. The versatility of the proposed strategy not only provides a brand‐new reliable platform to pattern functional materials with photo‐regulated and reversible microstructures, but also promotes the development of smart materials that can find applications in information safety, reversible microfluidics, and electronic devices.

N/S‐Doped Hierarchical Porous Bamboo Carbon Fibers with Ultra‐Large Surface Area and Highly Exposed Active Sites for Flexible Zinc‐Air Battery†

Comprehensive SummaryFacile mass transport channel and accessible active sites are crucial for binder‐free air electrode catalysts in rechargeable flexible zinc‐air battery (ZAB). Herein, a ZnS/NH3 dual‐assisted pyrolysis strategy is proposed to prepare N/S‐doped hierarchical porous bamboo carbon cloth (HP‐NS‐BCC) as binder‐free air electrode catalyst for ZAB. BCC fabric with abundant micropores is firstly used as flexible carbon support to facilitate the heteroatom‐doping and construct the hierarchical porous structure. ZnS nanospheres and NH3 activization together facilitate the electronic modulation of carbon matrix by N/S‐doping and optimize the macro/meso/micropores structure of carbon fibers. Benefiting from the highly‐exposed N/S‐induced sites with enhanced intrinsic activity, the optimized mass transport of biocarbon fibers, as well as the ultra‐large specific surface area of 2436.1 m2·g–1, the resultant HP‐NS‐BCC catalyst exhibits improved kinetics for oxygen reduction/evolution reaction. When applied to rechargeable aqueous ZABs, it achieves a significant peak power density of 249.1 mW·cm−2. As binder‐free air electrode catalyst, the flexible ZAB also displays stable cycling over 500 cycles with a minimal voltage gap of 0.42 V, showcasing promising applications in flexible electronic devices.

Structural, optical, and electrical properties of multi-component P-type oxide-semiconductor Cu-Mn-Sn-O thin films

P-type oxide semiconductors have attracted significant attention as conducting channel layers due to their wide applications in electronic devices. In this study, multi-component oxide-semiconductor Cu1–2xMnxSnxO thin films with x = 0.05, 0.10, 0.15, 0.20, 0.25, 0.30, and 0.33 were prepared on glass substrates using a solution process accompanied by a spin-coating technique. A phase transition between the cupric oxide monoclinic structure and the rock salt structure was observed with increasing concentrations of Mn and Sn, while the concentration of Cu simultaneously decreased in the precursors. The crystallite size decreased throughout the samples, reaching a minimum value of 9.8 nm at an equimolar ratio. Scanning electron microscopy further confirmed this downward trend and indicated an improvement in the quality of the film surfaces. According to the optical absorption measurements, the bandgap energy ranged from 2.68 to 3.44 eV. Interestingly, the sheet resistance of Cu1–2xMnxSnxO films dropped sharply from 5.24 kΩ/sq for CuO to 0.034 kΩ/sq for the film with a molar ratio of Cu:Mn:Sn being 34:33:33.

Research on the robust electrical contact properties and favorable transport characteristics of two-dimensional WB4/MoSi2N4 van der Waals heterostructures

Ensuring optimal interface contact performance is crucial for achieving low-resistance ohmic contact in the design of two-dimensional (2D) electronic devices. In this study, we systematically investigate the contact properties of van der Waals (vdW) heterojunctions formed by compositing the semi-metal WB4 with Dirac cones and the semiconductor MoSi2N4 through first-principles calculations. A thorough investigation has been carried out on the electronic structure and transport characteristics at the interface. Our research findings indicate that the WB4/MoSi2N4 combination demonstrates robust ohmic contact performance, maintaining ohmic or near-ohmic p-type Schottky contacts over a wide range when exposed to electric field, varying layer spacing, and biaxial strain. This unique characteristic is associated with the Fermi level pinning (FLP), where there are gap states present at the interface. Here, the FLP plays a positive role in maintaining ohmic contact. In addition, different derivatives of MoSi2N4 are combined with WB4 to create heterostructures and study the changes in contact performance. Our research shows that the robust ohmic contact of WB4/MoSi2N4 will have excellent prospects for application in future electronic devices.

Tuning the structural, optical, and dielectric properties of europium-doped barium titanate ceramics

This study explores the optical and dielectric properties of pure and europium-doped barium titanate ceramics with formula Ba1−3x/2EuxTiO3 (x=0,0.005,0.015and0.025\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$x=0,0.005, 0.015\ ext{ and }0.025$$\\end{document}). The materials were synthesized using the solid-state reaction method. The influence of Eu + 3 ion incorporation on the crystal structure was examined using XRD, which indicated the formation of a cubic phase. Lattice parameter measurements showed excellent agreement with various theoretical models for predicting the lattice constant, with an average error of only 0.20%. UV–visible spectroscopy analysis is utilized to investigate optical characteristics, revealing a decrease in the optical band gap from 2.65 to 2.77 eV post-Eu doping, which is notably lower than the bulk barium titanate value of 3.2 eV. Materials with smaller band gaps are more suited for optoelectronic applications like photodetectors and light-emitting diodes (LEDs). The dielectric response of europium-doped barium titanate was studied across a frequency range of 1 kHz to 2 MHz and a temperature range of 77 to 300 K, showing remarkable stability. The frequency-dependent dielectric analysis revealed that the dielectric constant initially increased with increasing doping concentration, but decreased at higher concentrations. These results suggest that europium-doped barium titanate holds significant promise for future electronic device applications due to its enhanced optical and dielectric properties.

Novel penta-GeC5 nanosheet as potential candidate for efficient thermoelectric application: A DFT approach

Under the framework of density functional theory, we systematically explore the geometric, electronic, transport, and thermal properties of a novel 2D pentagonal monolayer of GeC5. Our calculations show that the structure is dynamically and mechanically stable. Simulated results indicate that the predicted monolayer is an indirect semiconductor with a band gap of 1.77 eV. Using the Bardeen and Shockley formula, the carrier mobility of the electrons is found to be 824.41 cm2 V−1 S−1, while that of holes registers a more significant value of 4433.84 cm2 V−1 S−1. The lattice thermal conductivity for the undoped system was calculated using the Slack model, recording values of 13.46 W/(m.K), 6.73 W/(m.K), and 4.49 W/(m.K) at 300K, 600K, and 900K, respectively. In the case of electron doping, the figure of merit (ZT) is only significant along the x-direction. ZT reaches a maximum value of 2.97 at T = 300K for an energy of 0.79 eV above the Fermi level. Hole doping, however, does not lead to exciting results due to the shallow ZT values. All reported results are vacuum-free, enabling an accurate and direct comparison with experimental data whenever available. The obtained electronic properties suggest that the penta-GeC5 monolayer is a promising candidate for new electronic device applications. Additionally, when appropriately doped, the figure of merit of penta-GeC5 is expected to increase with temperature, thus making it a key ingredient in producing thermoelectric devices on the nanoscale.

The impact of S vacancies on the modulation of the work function and Schottky barrier at the Au/MoS2 interface

The S vacancy at metal/MoS2 interface plays a much important role than the semiconductor itself. In this work, the influence of different configurations of S vacancy concentrations on the effective work function and band structure of the Au/MoS2 interface has been investigated systematically using first-principles calculations. The study specifically explores the effective work function of the Au/MoS2 interface, the deviation of interface effects from the vacuum work function, and the dipole moment caused by interface charge transfer. The results reveal that the electronic work function of Au/MoS2 increases with the increase in S vacancy concentration, but the rate of increase tends to slow down with higher S concentrations. The variation in the effective work function of the Au/MoS2 interface may be attributed to the presence of S vacancies and the exposure of Mo atoms. S vacancies lead to a reduction in the Schottky barrier, resulting in increased leakage current. The Fermi pinning caused by S vacancy concentration and location is also observed. The results obtained in this study can serve as a theoretical foundation for applications in electronic devices that rely on metal/MoS2 contact.

Enhanced n-Type Thermoelectric Properties and Structure Evolution of Carbonized Metal-Coordination Polydopamine.

Carbonized polydopamine (cPDA) exhibits a nitrogenous graphite-like structure with n-type semiconductor property. However, the low electrical conductivity and Seebeck coefficient of cPDA cannot meet the needs of flexible thermoelectric devices. In this study, a series of metal ions were coordinated with cPDA to enhance n-type thermoelectric properties. At 300 K, all metal-coordination cPDA (metal-cPDA) samples obtain lower thermal conductivity compared to cPDA. Mn-cPDA exhibits the greatest Seebeck coefficient of -25.94 μV K-1, which is almost six times higher than cPDA. Fe-cPDA shows the best electrical conductivity of 2.45 × 105 S m-1. An optimal power factor (PF) value of 11.93 μW m-1 K-2 is achieved in Ca-cPDA with the enhanced electrical conductivity of 9.5 × 104 S m-1 and Seebeck coefficient of -11.24 μV K-1. Using Fourier transform infrared spectroscopy (FTIR), energy dispersive X-ray spectroscopy (EDX), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, X-ray diffraction (XRD), and transmission electron microscopy (TEM), we revealed the structural characterization of metal-cPDA. Our results indictate that the different metal ions (Mn2+, Zn2+, Mg2+, Al3+, Ca2+, and Fe3+) exert varying influences on the growth of graphite-like structure within metal-cPDA, which lead to the evolution of electrical conductivity. We observe that the carrier density and carrier mobility depend on both the degree of graphitization and the metal-ion coordination, which work together on electrical conductivity and Seebeck coefficient. These findings and understanding of the thermoelectric properties of PDA-based materials will help to realize high-performance n-type thermoelectric materials for flexible electronic device applications.

Vertical diamond Schottky barrier diodes with curved field plates

Diamond Schottky barrier diodes (SBDs) could theoretically operate at high voltage, high temperature, and high frequency and be potentially used in power electronics. However, the device breaks down prematurely and cannot operate stably at high voltages due to the edge electric field crowding. In this work, a vertical diamond SBD with a curved field plate (CFP) was prepared using a chemical reflow method, inductively coupled plasma etching, and electron-beam evaporation. This structure alleviates the electric field crowding at the edge of the Schottky electrode and results in a breakdown voltage and current density of 380 V and over 3000 A/cm2, respectively. After repetitive measurements, we found that the device can repeatedly breakdown at around 380 V. These results indicate that CFP structure diamond SBDs have great application in high-voltage and high-power electronic devices.

Electronic and optical properties of COFs/graphene and COF/hBN heterostructures

Covalent organic frameworks (COFs) are a class of intriguing materials with tunable electronic and optical properties. In this work, we investigate the electronic and optical properties of COFs embedded with hBN and graphene. Our results demonstrate that graphene integration enhances the ultraviolet and visible light absorption of C6N6 and B6O6 monolayers, while charge transfer in all COF/graphene heterostructures leads to the formation of a built-in electric field. Furthermore, we show that incorporating hBN into B6O6 and C6N6 heterostructures enables control of their bandgap through an applied electric field, resulting in a semiconductor-to-metal transition under moderate electric field strengths. Additionally, B6O6/hBN exhibits suitable band edge alignment for photocatalytic water splitting. These findings provide valuable insights into the electronic and optical properties of COF heterostructures and their potential applications in electronic and optoelectronic devices. Our study contributes to ongoing efforts in the design and development of novel COF and 2D material heterostructures for future electronic and photonic applications.

Intermediate Intercluster Bond Orders. Electronic Communication in Au38(SR)24 Superatomic Molecules.

Ligand-protected gold clusters remain potential building blocks for envisaged molecular materials. The archetypal Au38(SR)24 cluster can be viewed as a robust template for the fusion of two Au25(SR)18- cluster units, retaining a bi-icosahedral Au23 core. Via electrochemical properties, the overall charge state can be selectively tuned, enabling the access of 14 valence electron (ve) species featuring a single intercluster bond and nearby charge from -1 to +3, achieving related species bearing 15- to 11-ve with variable intercluster bond orders. Here, we explore the characteristics of intermediate intercluster bond orders in order to provide insights into the plausible electron communication between the constituent building blocks, with Au38(SR)24, as a representative template. Our results denote a small structural variation along -1 to +3 charge states, provided by the core-protecting ligand interaction, which is enhanced towards more oxidized species. The remaining unpaired electron from intermediate intercluster bond orders of 1.5 for Au38(SR)241-, 1.5 for Au38(SR)241+, and 2.5 for Au38(SR)243+, holds delocalized characteristics between the building block units, favoring electron communication for conductive and cooperative cluster aggregates. Such features are relevant for the formation of molecular electronic device applications, favoring the rationalization prior to engaging in explorative synthesis of larger ligand-protected cluster aggregates.

Growth rate effect on the dielectric properties of FeNbO4 fibres processed by the laser floating zone technique

Fe-based materials exhibiting high dielectric constants have been attracting great attention due to their potential for application in electronic devices. In this work, iron niobate (FeNbO4) fibres were produced by the Laser Floating Zone technique, applying three different growth speeds: 5, 10 and 25 mm/h. The XRD patterns showed the presence of two phases, being the FeNbO4 the major one in all the samples. The effect of the growth speed is well perceptible in the morphology of the fibres. The dielectric measurements revealed that all samples have at least one dielectric relaxation phenomenon that is thermally activated, with the activation energy, estimated through the Arrhenius law, presenting values between 0.057 and 0.072 eV. The Nyquist plots showed the presence of a single semicircle for each temperature, that could be modelled by an equivalent electrical circuit consisting of an offset resistance in series with a parallel combination of a grain resistance and a grain constant phase element. The grain resistance increased with the increasing growth speed, from 574 to 64497 Ω, with the constant phase element showing the opposite trend, decreasing from 0.40 to 0.17 nF.

Concurrence of directional Kondo transport and incommensurate magnetic order in the layered material AgCrSe2

In this work, we report on the concurrent emergence of the directional Kondo behavior and incommensurate magnetic ordering in a layered material. We employ temperature- and magnetic field-dependent resistivity measurements, susceptibility measurements, and high resolution wavelength X-ray diffraction spectroscopy to study the electronic properties of AgCrSe2. Impurity Kondo behavior with a characteristic temperature of TK = 32 K is identified through quantitative analysis of the in-plane resistivity, substantiated by magneto-transport measurements. The excellent agreement between our experimental data and the Schlottmann’s scaling theory allows us to determine the impurity spin as S = 3/2. Furthermore, we discuss the origin of the Kondo behavior and its relation to the material’s antiferromagnetic transition. Our study uncovers a rare phenomenon—the equivalence of the Néel temperature and the Kondo temperature—paving the way for further investigations into the intricate interplay between impurity physics and magnetic phenomena in quantum materials, with potential applications in advanced electronic and magnetic devices.

Modulating charge density wave states in 1T-TaS[formula omitted] by self-intercalation: A DFT study

Complicated charge density wave (CDW) phases transitions in the transition-metal dichalcogenide (TMDs) 1T-TaS2 have attracted wide research interest owing to the accompanied complex electronic structure transition which has not been fully understood. Inspired by a recent experimental work (Zhao et al. (2020), reported the successful preparation of Ta atom self-intercalated 2H-TaS2), we employed first-principles methods to investigate Ta atom self-intercalated 1T-TaS2, exploring effects of self-intercalation on electronic structure, magnetism, and stability ofthe charge density wave (CDW) phase in 1T-TaS2. Our first-principle calculation shows that the intercalation of Ta atom into the van der Waals gap of 1T-TaS2 induce the phase transition from 1T phase to CDW phase, and the positions of intercalated Ta atom determine the distribution of David-star clusters. Accompanied by the structural phase transition, the Ta intercalated 1T-TaS2 also undergoes an electronic structure phase transition from non-magnetic metal to half-metal which is also different from conventional charge density wave’s insulating state. When appropriate holes are doped to the intercalation system, the CDW David-star cluster is gradually destroyed and eventually returns to its original 1T phase. Our studies enrich the phase diagram of TaS2 and highlight the effective manipulation of the CDW states via self-intercalation. This type of materials may have very promising applications in future electronic devices.

A Highly Conductive n-Type Conjugated Polymer Synthesized in Water.

Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is a benchmark hole-transporting (p-type) polymer that finds applications in diverse electronic devices. Most of its success is due to its facile synthesis in water, exceptional processability from aqueous solutions, and outstanding electrical performance in ambient. Applications in fields like (opto-)electronics, bioelectronics, and energy harvesting/storage devices often necessitate the complementary use of both p-type and n-type (electron-transporting) materials. However, the availability of n-type materials amenable to water-based polymerization and processing remains limited. Herein, we present a novel synthesis method enabling direct polymerization in water, yielding a highly conductive, water-processable n-type conjugated polymer, namely, poly[(2,2'-(2,5-dihydroxy-1,4-phenylene)diacetic acid)-stat-3,7-dihydrobenzo[1,2-b:4,5-b']difuran-2,6-dione] (PDADF), with remarkable electrical conductivity as high as 66 S cm-1, ranking among the highest for n-type polymers processed using green solvents. The new n-type polymer PDADF also exhibits outstanding stability, maintaining 90% of its initial conductivity after 146 days of storage in air. Our synthetic approach, along with the novel polymer it yields, promises significant advancements for the sustainable development of organic electronic materials and devices.