Applications In Electronic Devices Research Articles

Photo‐Directed Growth of Surface Micro‐Patterns on Photosensitive Semicrystalline Polymers

AbstractPatterning polymeric materials with controllable microstructures can meet diversified requirements and realize promising applications. Exploring micro‐/nano‐pattern methodology offers possibilities for future techniques, however, the self‐organized growth of polymeric materials has some limitations and the development of direct and noncontact patterning processes is still challenging. In this work, the study presents a facile strategy for endowing polymers with spatially regulated microstructures by direct photo‐printing, which incorporates both advantages of typical top‐down and bottom‐up approaches. By employing the photodimerization of anthracene‐containing semi‐crystallized polymers, the gradient crosslinking results in a mismatch of thermal expansion coefficients between the crosslinked surface and the uncrosslinked bottom layer. After heating treatment, constrained by the crosslinked surface, the uncrosslinked bottom polymer of the molten state in the exposed region tends to flow and migrate toward the unexposed region, similar to a volcanic eruption, which accurately determines the height and morphology of pattern. Besides, the well‐defined patterns can controllably grow upon thermal treatment due to phase transformation and migration. The versatility of the proposed strategy not only provides a brand‐new reliable platform to pattern functional materials with photo‐regulated and reversible microstructures, but also promotes the development of smart materials that can find applications in information safety, reversible microfluidics, and electronic devices.

N/S‐Doped Hierarchical Porous Bamboo Carbon Fibers with Ultra‐Large Surface Area and Highly Exposed Active Sites for Flexible Zinc‐Air Battery†

Comprehensive SummaryFacile mass transport channel and accessible active sites are crucial for binder‐free air electrode catalysts in rechargeable flexible zinc‐air battery (ZAB). Herein, a ZnS/NH3 dual‐assisted pyrolysis strategy is proposed to prepare N/S‐doped hierarchical porous bamboo carbon cloth (HP‐NS‐BCC) as binder‐free air electrode catalyst for ZAB. BCC fabric with abundant micropores is firstly used as flexible carbon support to facilitate the heteroatom‐doping and construct the hierarchical porous structure. ZnS nanospheres and NH3 activization together facilitate the electronic modulation of carbon matrix by N/S‐doping and optimize the macro/meso/micropores structure of carbon fibers. Benefiting from the highly‐exposed N/S‐induced sites with enhanced intrinsic activity, the optimized mass transport of biocarbon fibers, as well as the ultra‐large specific surface area of 2436.1 m2·g–1, the resultant HP‐NS‐BCC catalyst exhibits improved kinetics for oxygen reduction/evolution reaction. When applied to rechargeable aqueous ZABs, it achieves a significant peak power density of 249.1 mW·cm−2. As binder‐free air electrode catalyst, the flexible ZAB also displays stable cycling over 500 cycles with a minimal voltage gap of 0.42 V, showcasing promising applications in flexible electronic devices.

The origin of magnetic ordering and reduced mobility in KTaO3-based 2DEGs: Interfacial interdiffusion

Recently, KTaO3 (KTO)-based 5d two-dimensional electron gases (2DEGs), characterized by robust spin–orbit coupling, have emerged as promising candidates for future spintronic devices. However, the carrier mobility of KTO-based 2DEGs is typically lower than that of SrTiO3-based 2DEGs, which limits their further development. It is imperative to explore the underlying causes of diminished carrier mobility and devise strategies to augment it. In addition, the genesis of magnetism within KTO-based 2DEGs remains ambiguous. In this study, the 2DEG within the amorphous-EuTiO3/KTO (a-ETO/KTO) heterostructure demonstrates a high electron mobility of 289.1 cm2 V−1 s−1, which exhibits a significant decrease as the film growth temperatures increase. This decrease can be primarily ascribed to electron scattering by impurities, which is induced by the amplified interfacial element interdiffusion at a higher film growth temperature. In addition, the magnetism of 2DEGs for samples grown at different temperatures shows an increasing trend with growth temperatures, which is predominantly derived from the interdiffusion of Eu atoms. This study provides an in-depth analysis of the origin of magnetic ordering and reduced mobility in KTO-based 2DEGs, which will promote the further development of 2DEGs for future applications in electronic devices.

Structural, morphological, optical and electrical characterization of MgO thin films grown by sputtering technique on different substrates

Magnesium Oxide (MgO) thin film structures were deposited on glass and n-Si substrates by means of RF magnetron sputtering technique. Structural, morphological, optical characteristics of MgO thin film were determined by XRD, AFM and UV–Vis spectrometer techniques. The optical properties like absorption coefficient and optical band gap were extracted using optical transmittance and absorption spectra. The band-gap of MgO thin film was determined for direct electronic transition. Additionally, electric parameters like ideality factor, saturation current and barrier height of the Au/MgO/n-Si device were computed from the forward I–V data in dark state. The ideality factor was found to be greater than one. This indicates that the I–V characteristics of the device exhibits non-ideal attitude. The results show that the MgO thin film can be applied to both optical and electronic device applications.

Research on the robust electrical contact properties and favorable transport characteristics of two-dimensional WB4/MoSi2N4 van der Waals heterostructures

Ensuring optimal interface contact performance is crucial for achieving low-resistance ohmic contact in the design of two-dimensional (2D) electronic devices. In this study, we systematically investigate the contact properties of van der Waals (vdW) heterojunctions formed by compositing the semi-metal WB4 with Dirac cones and the semiconductor MoSi2N4 through first-principles calculations. A thorough investigation has been carried out on the electronic structure and transport characteristics at the interface. Our research findings indicate that the WB4/MoSi2N4 combination demonstrates robust ohmic contact performance, maintaining ohmic or near-ohmic p-type Schottky contacts over a wide range when exposed to electric field, varying layer spacing, and biaxial strain. This unique characteristic is associated with the Fermi level pinning (FLP), where there are gap states present at the interface. Here, the FLP plays a positive role in maintaining ohmic contact. In addition, different derivatives of MoSi2N4 are combined with WB4 to create heterostructures and study the changes in contact performance. Our research shows that the robust ohmic contact of WB4/MoSi2N4 will have excellent prospects for application in future electronic devices.

Next-generation electronic devices: Innovations in integrated circuits, sensors, and computing architectures

This paper delves into the forefront of electronic engineering, showcasing the evolution of integrated circuits (ICs), sensor technology advancements, and the latest enhancements in microprocessors and microcontrollers. It underscores the significant strides made towards miniaturization, energy efficiency, and the integration of high-performance computing (HPC) within these devices. Through detailed examination, the paper highlights three pivotal areas: the revolutionary fabrication techniques enabling nanometer-scale ICs; the emergence of nano-sensing devices, wireless sensor networks (WSNs), and flexible sensors transforming the landscape of environmental monitoring and healthcare; and the development of energy-efficient architectures and security enhancements in microprocessors and microcontrollers. Employing quantitative analyses and mathematical models, the paper provides insights into the technological breakthroughs driving these advancements, including dynamic voltage and frequency scaling (DVFS), near-threshold computing (NTC), and the implementation of hardware-based security measures [1]. This comprehensive analysis not only illuminates the current state of electronic engineering but also outlines the potential future directions of the field, emphasizing the interdisciplinary approaches required to tackle the challenges of modern electronic device design and application.

Study of the effects of heating on the physical, optical, and electrical properties of NiO thin films synthesized using a low-cost sol-gel method

Developments in low-cost techniques for growing high-quality nickel oxide thin films (NiOTFs) are critical enablers for the fabrication of NiO-based devices, particularly solar cells, light-emitting diodes, lasers, and many other applications. In this study, it has been demonstrated that the optical, electrical, and structural characteristics of NiOTFs coated on glass substrate employing a low-cost solution method are strongly influenced by post-thermal annealing treatments in ambient air. A comprehensive study was carried out on the characteristics of the deposited NiOTFs. X-ray diffraction (XRD) measurements indicate the enhancement of the crystal quality of films after annealing. There is a noticeable change and improvement in coated NiOTFs with heat treatment at 300 and 600 ℃ due to clear shifts in density. During the heating temperature increment, the energy of the band gap was shifted from 3.63 to 3.44 eV, and the electrical resistance of the NiOTFs varied from 1020 to 700 Ω-cm. Furthermore, the results indicate that the low-cost sol-gel (SG) deposition technique has a greater potential for producing high-quality p-type NiOTFs with minimal defects for electronic device applications.

Tuning the structural, optical, and dielectric properties of europium-doped barium titanate ceramics

This study explores the optical and dielectric properties of pure and europium-doped barium titanate ceramics with formula Ba1−3x/2EuxTiO3 (x=0,0.005,0.015and0.025\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$x=0,0.005, 0.015\ ext{ and }0.025$$\\end{document}). The materials were synthesized using the solid-state reaction method. The influence of Eu + 3 ion incorporation on the crystal structure was examined using XRD, which indicated the formation of a cubic phase. Lattice parameter measurements showed excellent agreement with various theoretical models for predicting the lattice constant, with an average error of only 0.20%. UV–visible spectroscopy analysis is utilized to investigate optical characteristics, revealing a decrease in the optical band gap from 2.65 to 2.77 eV post-Eu doping, which is notably lower than the bulk barium titanate value of 3.2 eV. Materials with smaller band gaps are more suited for optoelectronic applications like photodetectors and light-emitting diodes (LEDs). The dielectric response of europium-doped barium titanate was studied across a frequency range of 1 kHz to 2 MHz and a temperature range of 77 to 300 K, showing remarkable stability. The frequency-dependent dielectric analysis revealed that the dielectric constant initially increased with increasing doping concentration, but decreased at higher concentrations. These results suggest that europium-doped barium titanate holds significant promise for future electronic device applications due to its enhanced optical and dielectric properties.

Investigation of Structural, Electronic, and Optical Characteristics of a Novel Perovskite Halide, Mg3AsCl3, for Electronic Applications

In the present research article, the structural, electronic, and optical characteristics of a novel perovskite halide, Mg3AsCl3, for a broad range of applications are thoroughly investigated. The characteristics of Mg3AsCl3 perovskite are investigated via the use of the generalized gradient approximation (GGA), Perdew–Burke–Ernzerhof and Heyd–Scuseria–Ernzerhof (HSE06) functionals, which are employed in conjunction with the linear combination of atomic orbital calculator. The structural, electrical, and optical characteristics of the material are investigated using density‐functional theory. In this study of the electronic characteristics, it is found that Mg3AsCl3 exhibits an indirect energy bandgap of 2.49 eV with GGA and 3.54 eV with HSE06. The complex band structure exhibits characteristics that indicate the presence of evanescent waves, which are characterized by a layer separation of 5 Å. The report in this research presents reflectivity values of 0.06328 and 0.02971 with GGA and HSE06 functionals, respectively. The reported values of the extinction coefficient are 3.36487 × 10−5 and 2.07389 × 10−5 calculated with GGA and HSE06 functionals. The value reported for the real dielectric function Re[ε] is 2.79625 with GGA and 2.00658 with HSE06. Overall, in these findings, an overview is given that Mg3AsCl3 holds potential as a candidate for use in a wide range of electronic device applications.

Automated design of hybrid halide perovskite monolayers for band gap engineering

The recent experimental confirmation of perovskite monolayers has sparked ongoing efforts in their prediction and synthesis, showcasing their flexible tunable band gap and potential in advanced functional devices. Although large-scale computational designs have been successfully performed for inorganic perovskite monolayers, the complexity introduced by organic cations hinders the same approaches applied to the hybrid halide perovskite monolayers. To address this challenge, we have proposed a high-throughput first-principles computational workflow that automates the design of hybrid halide perovskite monolayers. We strategically reduce the complexity of the configurations by analyzing the orientation of cations and the structural symmetry. Over 400 hybrid halide perovskite monolayers have been designed, and their structures and fundamental properties are stored in the database. Correlation analyses show a strong correlation between band gaps and metal-halogen-metal bond angles or metal-halogen bond lengths, consistent with prior studies for bulk and layered perovskites. The underlying physics that the band gap is modulated by the antibonding in the metal-halogen bond makes band gap engineering of hybrid halide perovskite monolayers feasible. Accordingly, initial research on lateral heterojunctions and solar cells has been conducted to explore the potential practical applications of the designed hybrid halide perovskite monolayers. Our study lays the foundation for further exploration of hybrid halide perovskite monolayers and highlights promising opportunities for their potential applications in electronic and optical devices.

Effect of cation site occupancy on the structure and magnetic properties of SrCoxTixFe12–2xO19 thin films

Multiferroic materials have potential applications in multifunctional electronic devices, and M-type hexaferrite with conical spin order is a promising candidate. In this paper, a series of SrCoxTixFe12–2xO19 thin films were prepared by a sol-gel method, and x-dependent structure, cation site occupancy and magnetic properties were investigated to explore the origin of conical spin order in M-type hexaferrite. It was found that the introduction of Co2+ and Ti4+ ions decreases the uniaxial magnetocrystalline anisotropy and breaks the threefold symmetry of the lattice, inducing a conical magnetic structure. Moreover, the appearance temperature of the conical spin order (Tcone) increases first and then decreases with the increase of x, and the largest Tcone of about 324 K is obtained in SrCo1.8Ti1.8Fe8.4O19 thin film. The evolution of magnetization is closely related to the site occupancy of Co2+ and Ti4+ ions, and the net effective substitution ratio of spin-down Fe3+ is positive correlation to the Tcone of SrCoxTixFe12–2xO19 and thus considered to be responsible for the introduction of conical spin order. The results reveal the correlation between the structure, magnetic properties and cation site occupancy, pointing out an effective method to induce conical spin order in M-type hexaferrites.

Molecular engineering strategy and optoelectronic properties of diaminobenzene-thiazole π-conjugated small donor molecules for high-performance organic solar cells

In this current study, the π-conjugated oligomers based on Thiazole units have been designed to understand the interaction of molecular orbitals and the influence of the substituents on the energetic HOMO-LUMO gap to build highly π-conjugated nanostructures. Their strong π-conjugated insight was also evidenced in gas phase through the photovoltaic properties using B3LYP/6-31G(d,p) level of theory for potential applications in organic electronic devices. Our research indicates geometries optimized structures, FMOs and chemical parameters were determined to predict optical properties of all oligomers. The results demonstrate that thiazole unit’s addition improved absorption above 400 nm at first excited states. The open-cicruit voltage Voc have been decreased from 2.22 V to 1.26 V in M1-a to M1-d. Whereas, LHE values was increased from 0.404 to 0.986 in M2-a to M2-d. All designed molecules have shown the enhanced optoelectronic characteristic that is plausible reason for their potential photoactive use in Organic Photovoltaics (OPVs) devices efficiencies.

Magnetization reversal process in flat and patterned exchange-biased CoO/[Co/Pd] thin films

Nanostructured magnetic materials have gained great interest due to their possible technological applications in electronic and spintronic devices or in medicine as drug carriers. The key issue which decides on their potential industrial utilization is an exhibited type of a magnetization reversal process. Two main approaches used to describe the switching mechanism are the domain wall motion and coherent magnetization rotation, known as the Kondorsky and Stoner–Wohlfarth models, respectively. The reversal modes can be distinguished by angular measurements of hysteresis loops; however, in many experimental reports the dependencies do not precisely follow either of the models. This makes the question of how the magnetization reversal takes place and how to control or modify it one of the unclear and worth investigation issues in the research on magnetic materials. In this paper, we present our studies on the magnetization reversal in the exchange-biased CoO/[Co/Pd] thin films deposited on a flat substrate and on an array of anodized titanium oxide nanostructures. We studied the reversal mechanism using hysteresis loops and First-Order Reversal Curves. Interestingly, instead of the typical for the flat Co/Pd multilayers Kondorsky process, the system shows a crossover between the domain wall motion and the coherent rotation. A similar situation takes place for the pattern sample. Here, we connect this unusual behavior with the interface exchange interaction responsible for the exchange bias effect.

Nanocomposite hydrogel for skin motion sensing – An antifreezing, nanoreinforced hydrogel with decorated AuNP as a multicrosslinker

In this study, we present a nanocomposite hydrogel designed for skin motion sensing. The hydrogel is based on poly(acrylamide) crosslinked with gold nanoparticles covalently bound to the polymer matrix, yielding a robust, highly elastic and conductive material. The choice of amino acid derivative – N,N’-diacryloylcystine salt (BISS) – as a crosslinker allows for the introduction of gold nanoparticles, due to the presence of sulfide groups in its structure. During the nanoparticle modification process, covalent bonds between gold and sulfur atoms are formed as the disulfide bond is cleaved. In result of this self-assembly process, a multifunctional Au–BISS crosslinker is formed, enhancing the material’s mechanical properties and introducing electrical conductivity. To confer anti-freezing properties and limit water evaporation, a binary mixture of water and glycerol was used. The resultant hydrogel exhibits high elasticity, strain sensitivity across a wide strain range and various types of deformation (elongation, bending, compression) with exceptional response time (120 ms) and recovery time (90 ms). The material’s cold-resistance, resilience, and conductivity make it well-suited for real-time monitoring of joint movements and speech recognition, with potential applications in electronic skin and healthcare monitoring devices.

Effect of repeating hydrothermal growth processes and rapid thermal annealing on CuO thin film properties.

This paper presents an investigation into the influence of repeating cycles of hydrothermal growth processes and rapid thermal annealing (HT+RTA) on the properties of CuO thin films. An innovative hydrothermal method ensures homogeneous single-phase films initially. However, their electrical instability and susceptibility to cracking under the influence of temperature have posed a challenge to their utilization in electronic devices. To address this limitation, the HT+RTA procedure has been developed, which effectively eliminated the issue. Comprehensive surface analysis confirmed the procedure's ability to yield continuous films in which the content of organic compounds responsible for the formation of cracks significantly decreases. Structural analysis underscored the achieved improvements in the crystalline quality of the films. The implementation of the HT+RTA procedure significantly enhances the potential of CuO films for electronic applications. Key findings from Kelvin probe force microscopy analysis demonstrate the possibility of modulating the work function of the material. In addition, scanning capacitance microscopy measurements provided information on the changes in the local carrier concentration with each repetition. These studies indicate the increased usefulness of CuO thin films obtained from the HT+RTA procedure, which expands the possibilities of their applications in electronic devices.

Recent progress in covalent organic frameworks for flexible electronic devices

AbstractCovalent organic frameworks (COFs) are porous materials with good crystallinity, highly ordered stacking, tunable channels, and diverse functional groups that have been demonstrated to show great potential applications in flexible electronic devices, including flexible energy storage devices (batteries and supercapacitors), memristors and sensors. Although great research progress on the usage of COFs as active elements in flexible electronics has been witnessed, the summary in this direction is rare. Thus, it is the right time to write a review on COFs‐based flexible electronics. In this review, we will first discuss the different synthesis strategies to prepare COF materials. Then, the applications of COFs in flexible electronic devices are summarized. Finally, the future performance improvement and development directions of COFs in the field of flexible electronic devices are briefly outlined. This review could provide basic concepts and some guidelines to stimulate novel applications of COFs in diverse flexible electronic devices.

First-principles study of Stone–Wales defects in monolayer and Bernal-stacked hexagonal boron nitride

Recently, Stone–Wales (SW) defects gradually attracted people’s research interest because of their unique properties. The theoretical research indicated that the SW defect in hexagonal boron nitride (h-BN) can lead to new defect levels in bandgap, making h-BN apply in ultraviolet emitters. However, the SW defect is always observed in graphene and rarely observed in h-BN in the experiments. Here, we confirmed the SW defects are not easily formed in h-BN under thermodynamic conditions by first-principles calculations. Specifically, the monolayer h-BN with SW defect (h-BN-SW) has the weak bond strength, dynamic stability and high-temperature thermal stability, facilitating the healing of SW defects under high-temperature conditions and the role of hydrogen. Additionally, we found the SW defect in AB stacked h-BN (AB-h-BN) have good mechanical stability, dynamic stability and thermodynamic stability than h-BN-SW, especially for AB-h-BN-2SW (2SW defects formed in upper and lower layer of AB-h-BN, respectively), which can meet the requirements for its application in electronic devices. Even under thermodynamic conditions, the formation of SW defects is extremely challenging. Electron beam irradiation technology provides a window for the generation of SW defects in h-BN. This offers opportunities for the introduction and control of SW defects, while also creating potential for their application in electronic devices. Moreover, we found that the absorption peak broadens, and a new absorption peak appears with the generation of SW defects, which is mainly induced by the decrease of bandgap and the generation of defect levels. Our research can provide theoretical guidance at atomic scale for designing and applying h-BN with SW defect in the experiments.

Impact of aliovalent La-doping on zinc oxide – A wurtzite piezoelectric

The development of high-performance low-cost electroactive films for energy conversion and electronic device applications is a key goal of current advanced materials and condensed matter physics research. Here, using solution-based scalable chemical spray pyrolysis, high-quality electroactive lanthanum-doped zinc oxide (i.e., Zn1-xLaxO) thin films are grown on silicon substrates, and the impact of aliovalent lanthanum doping is investigated using a suite of microstructural, optical and nanoscale scanning probe microscopy techniques. The synthesized polycrystalline thin films show hexagonal wurtzite crystal structure with an increased unit cell volume, crystallite size, and conductivity with lanthanum doping up to 4 at.% beyond which the thin films (6 at.%), however, exhibit a change in dominant crystalline orientation from (101) to (002) plane. Concurrently, at this optimal dopant concentration of 4–6 at.%, the electromechanical performance is enhanced by about 20 %, and polarity-dependent nanoscale electronic transport behaviour is revealed. Our study, therefore, provides key insights into the impact of the rare earth aliovalent lanthanum dopant on the electroactive and electronic properties of low-cost, functional thin films for sustainable energy and sensing applications.

Gas adsorption on activated AlGaN photocathode: A first-principle study on charge redistribution, work function variation and emission performance attenuation

AlGaN photocathode has important applications in photoelectronic imaging and vacuum electronic devices. However, The short lifetime of the photocathode results in higher costs of usage. This can be attributed to the decrease in vacuum degree and the adsorption of residual gases. In this study, first-principle study and transmission matrix are utilized to investigate five gases (H2O, CO, CO2, H2, CH4) adsorbed on Cs-activated AlGaN (100) surface. Results suggest that all these five gases are prior to deposit on the surface at low coverage of 0.25 ML with adsorption energy of -2 eV. CO has the highest adsorption possibility with its adsorption energy lower than 0 eV. Significant charge transfer occurs at Cs-gas interface, particularly near the oxygen atoms of oxygen-containing molecules. CO2 and CO exhibit a noticeable increase in work function. The increase in the work function of the H2O adsorption is primarily due to its longer dipole length rather than dipole charge by analysing the surface dipole moment. CH4 and H2 have negligible impact on surface properties. Upon gas adsorption, the electrons on the AlGaN surface flow back to the adatoms, causing the CBM shift towards higher energy and upwards band bending. Combined with the surface electron affinity, the iteration of band structures further explains the increase of work function. The open energy of free electron escaping into the vacuum after CO2 adsorption increases to the level of inactivated surface of 5.55 eV from PBE-D2. This study reveals the mechanism of performance decay of the photocathode and is expected to guide the optimization of packaging technology.

Laser patterned graphene pressure sensor with adjustable sensitivity in an ultrawide response range

Flexible pressure sensors have attracted wide attention because of their applications in wearable electronic, human-computer interface, and healthcare. However, it is still a challenge to design a pressure sensor with adjustable sensitivity in an ultrawide response range to satisfy the requirements of different application scenarios. Here, a laser patterned graphene pressure sensor (LPGPS) is proposed with adjustable sensitivity in an ultrawide response range based on the pre-stretched kirigami structure. Due to the out-of-plane deformation of the pre-stretched kirigami structure, the sensitivity can be easily tuned by simply modifying the pre-stretched level. As a result, it exhibits a maximum sensitivity of 0.243 kPa−1, an ultrawide range up to 1600 kPa, a low detection limit (6 Pa), a short response time (42 ms), and excellent stability with high pressure of 1200 kPa over 500 cycles. Benefiting from its high sensitivity and ultrawide response range, the proposed sensor can be applied to detect physiological and kinematic signals under different pressure intensities. Additionally, taking advantage of laser programmable patterning, it can be easily configured into an array to determine the pressure distribution. Therefore, LPGPS with adjustable sensitivity in an ultrawide response range has potential application in wearable electronic devices.