In this paper, we report our most recent work on applying ferroelectric (Ba 0.67 Sr 0.33 )Ti x O y thin films for the flat panel display application. Ferroelectric (Ba 0.67 Sr 0.33 )Ti x O y thin films, with x = 1.00, 1.02, 1.04, and 1.06, have been prepared using the sol-gel and spin-coating technology onto <001> n-type Si tips, and annealed in air at various temperatures. The samples have been systematically characterized using DTA, TGA, X-ray diffraction, SEM, AFM, and DC field emission. Experimental results have shown that BST thin films with perovskite structure have been successfully coated on Si tips and the applied voltage required for Si tips field emission has been substantially reduced from 60 - 80 V/ w m for bare Si tips to about 4 - 10 V/ w m for BST thin film coated Si tips, which is a great beneficial factor for low operating voltage and low power consumption for new generation electronic devices. It is also very strikingly found that excess Ti concentration has profound effect on electron field emission characteristics, the highest emission current density of about 18 w A/cm 2 at 10V/ w m has been obtained in a Ti = 1.04 BST coated Si tip sample, which is in many orders larger than the maximum emission current density value of about 0.36 pA/cm 2 at its breakdown field of 85 V/ w m for the bare Si tips! The thickness of coated BST thin films has also greatly affected the electron emission current density in the order of 10 3 . These very encouraging experimental results have offered great promise for the application of ferroelectric thin films in field emission display. However, the mechanism responsible for the above mentioned exciting phenomena is not clear at the present time.