Antiferromagnetic Memory Research Articles

Antiferromagnetic domain wall memory with neuromorphic functionality

Antiferromagnetic materials have unique properties due to their alternating spin arrangements. Their compensated magnetic order, robust against external magnetic fields, prevents long-distance crosstalk from stray fields. Furthermore, antiferromagnets with combined parity and time-reversal symmetry enable electrical control and detection of ultrafast exchange-field enhanced spin manipulation up to THz frequencies. Here we report the experimental realization of a nonvolatile antiferromagnetic memory mimicking an artificial synapse, in which the reconfigurable synaptic weight is encoded in the ratio between reversed antiferromagnetic domains. The non-volatile memory is “written” by spin-orbit torque-driven antiferromagnetic domain wall motion and “read” by nonlinear magnetotransport. We show that the absence of long-range interacting stray magnetic fields leads to very reproducible electrical pulse-driven variations of the synaptic weights.

An antiferromagnetic spin phase change memory

The electrical outputs of single-layer antiferromagnetic memory devices relying on the anisotropic magnetoresistance effect are typically rather small at room temperature. Here we report a new type of antiferromagnetic memory based on the spin phase change in a Mn-Ir binary intermetallic thin film at a composition within the phase boundary between its collinear and noncollinear phases. Via a small piezoelectric strain, the spin structure of this composition-boundary metal is reversibly interconverted, leading to a large nonvolatile room-temperature resistance modulation that is two orders of magnitude greater than the anisotropic magnetoresistance effect for a metal, mimicking the well-established phase change memory from a quantum spin degree of freedom. In addition, this antiferromagnetic spin phase change memory exhibits remarkable time and temperature stabilities, and is robust in a magnetic field high up to 60 T.

Electrical-Controllable Antiferromagnet-Based Tunnel Junction.

An electrical-controllable antiferromagnet tunnel junction is a key goal in spintronics, holding immense promise for ultradense and ultrastable antiferromagnetic memory with high processing speed for modern information technology. Here, we have advanced toward this goal by achieving an electrical-controllable antiferromagnet-based tunnel junction of Pt/Co/Pt/Co/IrMn/MgO/Pt. The exchange coupling between antiferromagnetic IrMn and Co/Pt perpendicular magnetic multilayers results in the formation of an interfacial exchange bias and exchange spring in IrMn. Encoding information states "0" and "1" is realized through the exchange spring in IrMn, which can be electrically written by spin-orbit torque switching with high cyclability and electrically read by antiferromagnetic tunneling anisotropic magnetoresistance. Combining spin-orbit torque switching of both exchange spring and exchange bias, a 16 Boolean logic operation is successfully demonstrated. With both memory and logic functionalities integrated into our electrically controllable antiferromagnetic-based tunnel junction, we chart the course toward high-performance antiferromagnetic logic-in-memory.

Magnetic Switching Dynamics and Tunnel Magnetoresistance Effect Based on Spin-Splitting Noncollinear Antiferromagnet Mn3Pt

In comparison to ferromagnets, antiferromagnets are believed to have superior advantages for applications in next-generation magnetic storage devices, including fast spin dynamics, vanishing stray fields and robust against external magnetic field, etc. However, unlike ferromagnetic orders, which could be detected through tunneling magnetoresistance effect in magnetic tunnel junctions, the antiferromagnetic order (i.e., Néel vector) cannot be effectively detected by the similar mechanism due to the spin degeneracy of conventional antiferromagnets. Recently discovered spin-splitting noncollinear antiferromagnets, such as Mn3Pt with momentum-dependent spin polarization due to their special magnetic space group, make it possible to achieve remarkable tunneling magnetoresistance effects in noncollinear antiferromagnetic tunnel junctions. Through first-principles calculations, we demonstrate that the tunneling magnetoresistance ratio can reach more than 800% in Mn3Pt/perovskite oxides/Mn3Pt antiferromagnetic tunnel junctions. We also reveal the switching dynamics of Mn3Pt thin film under magnetic fields using atomistic spin dynamic simulation. Our study provides a reliable method for detecting Néel vector of noncollinear antiferromagnets through the tunnel magnetoresistance effect and may pave its way for potential applications in antiferromagnetic memory devices.

Electrical 180° switching of Néel vector in spin-splitting antiferromagnet.

Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultradense and ultrafast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180° switching of Néel vector is a long-term goal for developing electrical-controllable antiferromagnetic memory with opposite Néel vectors as binary "0" and "1." However, the state-of-art antiferromagnetic switching mechanisms have long been limited for 90° or 120° switching of Néel vector, which unavoidably require multiple writing channels that contradict ultradense integration. Here, we propose a deterministic switching mechanism based on spin-orbit torque with asymmetric energy barrier and experimentally achieve electrical 180° switching of spin-splitting antiferromagnet Mn5Si3. Such a 180° switching is read out by the Néel vector-induced anomalous Hall effect. On the basis of our writing and readout methods, we fabricate an antiferromagnet device with electrical-controllable high- and low-resistance states that accomplishes robust write and read cycles. Besides fundamental advance, our work promotes practical spin-splitting antiferromagnetic devices based on spin-splitting antiferromagnet.

Robust Antiferromagnetic FeRh Films on Mica.

FeRh shows an antiferromagnetic to ferromagnetic phase transition above room temperature, which permits its use as an antiferromagnetic memory element. However, its antiferromagnetic order is sensitive to small variations in crystallinity and composition, challenging its integration into flexible devices. Here, we show that flexible FeRh films of high crystalline quality can be synthesized by using mica as a substrate, followed by a mechanical exfoliation of the mica. The magnetic and transport data indicate that the FeRh films display a sharp antiferromagnetic to ferromagnetic phase transition. Magnetotransport data allow for the observation of two distinguishable resistance states, which are written after a field-cooling procedure. It is shown that the memory states are robust under the application of magnetic fields of up to 10 kOe.

Scaling of voltage controlled magnetic anisotropy based skyrmion memory and its neuromorphic application

Voltage controlled skyrmion memory requires less energy compared to current controlled method where voltage changes magnetic anisotropy (VCMA) and Dzyaloshinskii-Moriya interaction (DMI). Ferromagnetic (FM) and synthetic antiferromagnetic (SAFM) memory devices are simulated using electric field control method where gate and gap width are chosen as smaller than skyrmion size so that skyrmion can feel the change in voltage polarity in the neighbouring gate and moves accordingly. Scaling of memory device is performed which shows SAFM memory can be made much narrower compared to FM memory as skyrmion diameter also depends on width of the structure. Effects of device structure and skyrmion-skyrmion repulsion force on skyrmion diameter variation are shown in cylindrical structure considering effect of demagnetizing field. Apart from these, neuromorphic application is considered where skyrmion moves from central square neuron region to surrounding synapse region or vice versa by the application of voltage. Switching time, voltage range, energy and scaling of device dimensions are shown for synapse-neuron having different number of skyrmions where multiple skyrmions represent different weight in the neuromorphic circuit.

Nanoscale Materials for State-of-the-Art Magnetic Memory Technologies

The review deals with different materials science aspects of state-of-the-art magnetic memory technologies, such as magnetoresistive random-access memory (MRAM), antiferromagnetic (AFM) memory, and skyrmion racetrack memory. Particularly, the materials with high perpendicular magnetic anisotropy (PMA), such as CoFeB, L10-ordered Mn- and Fe-based alloys, are considered (Sec. 1) regarding their applications in MRAM technology. Furthermore, studies of AFM alloys, such as FeRh, CuMnAs, Mn2Au, are reviewed (Sec. 2) with an emphasis on the application of these materials in AFM-memory technology. Finally, the last (3rd) section of the review is concerning materials that could be used in skyrmion racetrack memory.

Local and nonlocal spin Seebeck effect in lateral Pt–Cr2O3–Pt devices at low temperatures

We have studied thermally driven magnon spin transport (spin Seebeck effect, SSE) in heterostructures of antiferromagnetic α-Cr2O3 and Pt at low temperatures. Monitoring the amplitude of the local and nonlocal SSE signals as a function of temperature, we found that both decrease with increasing temperature and disappear above 100 K and 20 K, respectively. Additionally, both SSE signals show a tendency to saturate at low temperatures. The nonlocal SSE signal decays exponentially for intermediate injector–detector separation, consistent with magnon spin current transport in the relaxation regime. We estimate the magnon relaxation length of our α-Cr2O3 films to be around 500 nm at 3 K. This short magnon relaxation length along with the strong temperature dependence of the SSE signal indicate that temperature-dependent inelastic magnon scattering processes play an important role in the intermediate range magnon transport. Our observation is relevant to low-dissipation antiferromagnetic magnon memory and logic devices involving thermal magnon generation and transport.

Antiferromagnetic switching driven by the collective dynamics of a coexisting spin glass

The theory behind the electrical switching of antiferromagnets is premised on the existence of a well-defined broken symmetry state that can be rotated to encode information. A spin glass is, in many ways, the antithesis of this state, characterized by an ergodic landscape of nearly degenerate magnetic configurations, choosing to freeze into a distribution of these in a manner that is seemingly bereft of information. Here, we show that the coexistence of spin glass and antiferromagnetic order allows a novel mechanism to facilitate the switching of the antiferromagnet Fe1/3 + δNbS2, rooted in the electrically stimulated collective winding of the spin glass. The local texture of the spin glass opens an anisotropic channel of interaction that can be used to rotate the equilibrium orientation of the antiferromagnetic state. Manipulating antiferromagnetic spin textures using a spin glass' collective dynamics opens the field of antiferromagnetic spintronics to new material platforms with complex magnetic textures.

Low-energy switching of antiferromagnetic CuMnAs/GaP using sub-10 nanosecond current pulses

The recently discovered electrical-induced switching of antiferromagnetic (AF) materials that have spatial inversion asymmetry has enriched the field of spintronics immensely and opened the door for the concept of antiferromagnetic memory devices. CuMnAs is one promising AF material that exhibits such electrical switching ability and has been studied to switch using electrical pulses of length millisecond down to picosecond but with little focus on the nanosecond regime. We demonstrate here the switching of CuMnAs/GaP using nanosecond pulses. Our results showed that in the nanosecond regime, low-energy switching and a high readout signal with highly reproducible behavior down to a single pulse can be achieved. Moreover, a comparison of the two switching methods of orthogonal switching and polarity switching was made on the same device, and it showed distinct behaviors that can be exploited selectively for different future memory/processing applications.

Electric-Field-Controlled Antiferromagnetic Spintronic Devices.

In recent years, the field of antiferromagnetic spintronics has been substantially advanced. Electric-field control is a promising approach for achieving ultralow power spintronic devices via suppressing Joule heating. Here, cutting-edge research, including electric-field modulation of antiferromagnetic spintronic devices using strain, ionic liquids, dielectric materials, and electrochemical ionic migration, is comprehensively reviewed. Various emergent topics such as the Néel spin-orbit torque, chiral spintronics, topological antiferromagnetic spintronics, anisotropic magnetoresistance, memory devices, 2D magnetism, and magneto-ionic modulation with respect to antiferromagnets are examined. In conclusion, the possibility of realizing high-quality room-temperature antiferromagnetic tunnel junctions, antiferromagnetic spin logic devices, and artificial antiferromagnetic neurons is highlighted. It is expected that this work provides an appropriate and forward-looking perspective that will promote the rapid development of this field.

Dynamics of domain-wall motion driven by spin-orbit torque in antiferromagnets

Ultrafast dynamics of antiferromagnetic materials is an appealing feature for novel spintronic devices. Several experiments have shown that both, the static states and the dynamical behavior of the antiferromagnetic order, are strictly related to stabilization of domains and domain wall (DW) motion. Hence for a quantitative understanding of statics and dynamics of multidomain states in antiferromagnetic materials a full micromagnetic framework is necessary. Here, we use this model to study the antiferromagnetic DW motion driven by the spin-orbit torque. The main result is the derivation of analytical expressions for the DW width and velocity that exhibit a very good agreement with the numerical simulations in a wide range of parameters. We also find that a mechanism limiting the maximum applicable current in an antiferromagnetic racetrack memory is the continuous nucleation of the domains from the edge, which is qualitatively different from what is observed in ferromagnetic racetracks.

Strain control of magnetic phase transition and perpendicular magnetic anisotropy in Ta/FeRh/MgO(001) heterostructure

Employing first-principles calculations, we reveal tremendous strain effects on the magnetic order and magnetic anisotropy energy (MAE) of Ta-capped FeRh films on MgO(001). It is found that the tensile strain can lead to the magnetic phase transition from a ferromagnetic to an antiferromagnetic state at the FeRh/MgO and Ta/FeRh interfaces. Furthermore, we demonstrate that magnetization direction of Ta/FeRh/MgO(001) can reverse from perpendicular to in-plane orientation by tuning the strain, in contrast to the strain-independent perpendicular magnetization in FeRh/MgO(001). The underlying mechanism is discussed in connection with the strain-induced interfacial magnetic phase transition and changes in Fe 3d-Ta 5d hybridization at the interface. These findings open interesting prospects for exploiting stain manipulation of magnetization switching across the magnetic phase transition of FeRh layers for the next generation of antiferromagnetic memory devices.

Designing Rashba\u2013Dresselhaus effect in magnetic insulators

One of the major strategies to control magnetism in spintronics is to utilize the coupling between electron spin and its orbital motion. The Rashba and Dresselhaus spin–orbit couplings induce magnetic textures of band electrons called spin momentum locking, which produces a spin torque by the injection of electric current. However, joule heating had been a bottleneck for device applications. Here, we propose a theory to generate further rich spin textures in insulating antiferromagnets with broken spatial inversion symmetry (SIS), which is easily controlled by a small magnetic field. In antiferromagnets, the ordered moments host two species of magnons that serve as internal degrees of freedom in analogy with electron spins. The Dzyaloshinskii–Moriya interaction introduced by the SIS breaking couples the two-magnon-degrees of freedom with the magnon momentum. We present a systematic way to design such texture and to detect it via magnonic spin current for the realization of antiferromagnetic memory.

Temperature-Dependent Studies of Coupled Fe55Pt45 / Fe49Rh51 Thin Films

Fe${}_{50}$Rh${}_{50}$ is an unusual alloy with a first-order metamagnetic phase transition above room temperature. Thin-film structures of FeRh with engineered interfacial exchange interactions are multifunctional, responding to temperature, magnetic field, and strain. The authors use experiments and simulations to study reduced switching fields in both macroscale Fe-Pt/FeRh thin films and mesoscale islands, allowing the exchange constants between layers to be determined. This will promote the development of nanoscale, multifunctional magnetic materials for applications including heat-assisted magnetic recording, spintronics, antiferromagnetic memory, and medical hyperthermia treatments.

Spin-Orbit-Torque Memory Operation of Synthetic Antiferromagnets.

In this Letter, we show the demonstration of a sequential antiferromagnetic memory operation with a spin-orbit-torque write, by the spin Hall effect, and a resistive read in the CoGd synthetic antiferromagnetic bits, in which we reveal the distinct differences in the spin-orbit-torque and field-induced switching mechanisms of the antiferromagnetic moment, or the Néel vector. In addition to the comprehensive spin torque memory operation, our thorough investigations also highlight the high immunity to a field disturbance as well as a memristive behavior of the antiferromagnetic bits.

Perpendicular magnetic anisotropy in bulk and thin-film CuMnAs for antiferromagnetic memory applications

CuMnAs with perpendicular magnetic anisotropy is proposed as an active material for antiferromagnetic memory. Information can be stored in the antiferromagnetic domain state, while writing and readout can rely on the existence of surface magnetization. It is predicted, based on first-principles calculations, that easy-axis anisotropy can be achieved in bulk CuMnAs by substituting a few percent of As atoms by Ge, Si, Al, or B. This effect is attributed to the changing occupation of certain electronic bands near the Fermi level induced by hole doping. The calculated temperature dependence of the magnetic anisotropy does not exhibit any anomalies. Thin CuMnAs(001) films are also predicted to have perpendicular magnetic anisotropy.

Spin torque control of antiferromagnetic moments in NiO

For a long time, there were no efficient ways of controlling antiferromagnets. Quite a strong magnetic field was required to manipulate the magnetic moments because of a high molecular field and a small magnetic susceptibility. It was also difficult to detect the orientation of the magnetic moments since the net magnetic moment is effectively zero. For these reasons, research on antiferromagnets has not been progressed as drastically as that on ferromagnets which are the main materials in modern spintronic devices. Here we show that the magnetic moments in NiO, a typical natural antiferromagnet, can indeed be controlled by the spin torque with a relatively small electric current density (~4 × 107 A/cm2) and their orientation is detected by the transverse resistance resulting from the spin Hall magnetoresistance. The demonstrated techniques of controlling and detecting antiferromagnets would outstandingly promote the methodologies in the recently emerged “antiferromagnetic spintronics”. Furthermore, our results essentially lead to a spin torque antiferromagnetic memory.

Heterogeneous coherent interface thermodynamics and Wulff construction associated with the cubic-tetragonal-orthorhombic multi-step structural transition in Mn-Ni alloys

A variety of heterogeneous coherent interfaces is formed during the cubic (fcc)-tetragonal (fct)-orthorhombic (fco) multi-step structural phase transition in Mn- Ni antiferromagnetic shape memory alloy, which directly affects their shape memory effect, magnetic field-controlled memory effect and damping property. The thermodynamic properties of various types of interface in Mn-Ni alloys have been studied by using a universal chemical-structure model. The chemical energy and structural energy of fcc/fct, fct/fco and fcc/fco interfaces were calculated and compared, and it was found that the structural energy played a leading role in the total interfacial energy and the construction of Wulff shape. Besides the temperature, the interfacial orientation relationship has an important influence on the interfacial energy, which can be used to consider the singularity of coherent interface from the Wulff shapes. Based on this heterogeneous coherent interfacial energy model, the relationship between interfacial specific heat, interface entropy and interfacial enthalpy and temperature of fcc/fct, fct/fco and fcc/fco heterogeneous interfaces were calculated and compared from thermodynamic viewpoint. The effect of the softening modulus and the habit plane index on the interfacial energy was investigated.